Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    2SD1719 Search Results

    2SD1719 Datasheets (10)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SD1719 Kexin Silicon NPN Triple Diffusion Planar Type Original PDF
    2SD1719 Panasonic Silicon NPN triple diffusion planar type Original PDF
    2SD1719 TY Semiconductor Silicon NPN Triple Diffusion Planar Type - TO-252 Original PDF
    2SD1719 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SD1719 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SD1719 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SD1719 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SD1719 Panasonic Power Transistors Scan PDF
    2SD1719P Panasonic Silicon NPN Triple Diffusion Planar Type Power Transistor Original PDF
    2SD1719Q Panasonic Silicon NPN Triple Diffusion Planar Type Power Transistor Original PDF

    2SD1719 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Transistors SMD Type Product specification 2SD1719 TO-252 6.50 +0.2 5.30-0.2 +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 +0.1 0.60-0.1 2.3 3 .8 0 +0.15 5.55 -0.15 +0.1 0.80-0.1 0.127 max +0.25 2.65 -0.1 High emitter-base voltage Collector open VEBO


    Original
    PDF 2SD1719 O-252

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1719 Silicon NPN triple diffusion planar type For power amplification with high forward current transfer ratio 3.0+0.4 –0.2 • Absolute Maximum Ratings TC = 25°C Parameter


    Original
    PDF 2002/95/EC) 2SD1719

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1719 Silicon NPN triple diffusion planar type For power amplification with high forward current transfer ratio 3.0+0.4 –0.2 • Absolute Maximum Ratings TC = 25°C Parameter


    Original
    PDF 2002/95/EC) 2SD1719

    2SD1719

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1719 Silicon NPN triple diffusion planar type For power amplification with high forward current transfer ratio Unit: mm 6.0±0.2 1.0±0.1 3.0+0.4 –0.2 1.5+0 –0.4 10.0±0.3


    Original
    PDF 2002/95/EC) 2SD1719 2SD1719

    2SD1719

    Abstract: No abstract text available
    Text: Power Transistors 2SD1719 Silicon NPN triple diffusion planar type For power amplification with high forward current transfer ratio 3.0+0.4 –0.2 • Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit Collector-base voltage Emitter open VCBO


    Original
    PDF 2SD1719 2SD1719

    2SD1719

    Abstract: No abstract text available
    Text: Transistors SMD Type Silicon NPN Triple Diffusion Planar Type 2SD1719 TO-252 6.50 +0.2 5.30-0.2 +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 +0.1 0.60-0.1 2.3 3 .8 0 +0.15 5.55 -0.15 +0.1 0.80-0.1 0.127 max +0.25 2.65 -0.1 High emitter-base voltage Collector open VEBO


    Original
    PDF 2SD1719 O-252 2SD1719

    3004 IC

    Abstract: IC 4405 2SD1719 20034
    Text: パワートランジスタ 2SD1719 シリコンNPNエピタキシャルプレーナ形 高電流増幅用 , 電力増幅用 Unit : mm 定格 単位 コレクタ・ベース間電圧 E 開放時 VCBO 100 V コレクタ・エミッタ間 電圧(B 開放時)


    Original
    PDF 2SD1719 300ms SJD00212BJD 3004 IC IC 4405 2SD1719 20034

    2sc5929

    Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
    Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original
    PDF responsibiliXP08081 XP08546 XP0A554 XP0D873 XP0D874 XP0D875 XP0E554 2sc5929 MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE

    STK411-230E

    Abstract: STK411-220E stk442-130 UPC2581V PAL005A FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
    Text: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for


    Original
    PDF STVDST-01 CAT22 STK411-230E STK411-220E stk442-130 UPC2581V PAL005A FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D

    2SC5936

    Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
    Text: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original
    PDF XP06501T XP06531 XP06545 XP0A554 XP0D873 XP0D874 XP0D875 2SC5936 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928

    Untitled

    Abstract: No abstract text available
    Text: Pow er Transistors 2SD1719 2SD1719 S ilicon N P N E p itaxial P la n a r Type High DC C urrent G ain Package D im ensions Pow er A m p lifier Ii f e , U nit 1 mm • Features 3.7max. 8.7 max. • H igh D C c u r re n t gain (hFE) • G ood lin e a rity of D C c u r re n t gain


    OCR Scan
    PDF 2SD1719

    b 803a

    Abstract: 2SD1719 2SD1257
    Text: Pow er T ra nsistors 2SD1719 2SD 1719 Silicon NPN Epitaxial Planar Type High DC Current Gain • Features h FE , Package Dimensions Power Amplifier U n it 1 mm 3.7max. 8.7 n • High DC cu rre n t gain (Iife) • Good linearity of DC c u rre n t gain (Iife)


    OCR Scan
    PDF 2SD1719 b 803a 2SD1719 2SD1257

    2SB1168

    Abstract: 2sb1163 2SD1731 2SD1713 2SD1714 2SD1715 2SD1716 2SD1718 2SD1719 2SD1720
    Text: - 262 - Ta=25XïP*Ef]fÎTc=25eC m 2SD1713 2SD1714 2SD1715 2SD1716 2SD1717 2SD1718 2SD1719 2SD1720 2SD1722 2SD1723 2SD1724 2SD1725 2SD1726 2SD1727 2SDÌ728 2SD1729 2SD1730 2SD1731 2SD1732 2SD1733 2SD1733F5 2SD1734 2SDÎ735 2SD1736 2SD1737 2SD1738 2SD1739


    OCR Scan
    PDF 2SD1713 2SD1714 2SD1715 2SD1716 2SM717 2SD1718 2SD1719 2SD1720 T0-220F 2SD1734 2SB1168 2sb1163 2SD1731

    B1548

    Abstract: 2SB1299A
    Text: Transistors Selection Guide by Applications and Functions • Silicon Power Transistors Application Functions VcEO lc (V) (A) lc !b (V) (A) (mA) T0-220(a) (D56) NPN TO-220F (D59) PNP ; NPN 1 < l 1 125 2SB954/A 60/80 2 < 2 2 200 2SB1052 < 1 2 400 < 1 2 200


    OCR Scan
    PDF T0-220 O-220F 2SB954/A 2SB1052 2SD1480 2SD1265/A O-220E T0220D 2SB1169/A 2SB1170 B1548 2SB1299A

    B938A

    Abstract: B939A 2SK1967 2SD1316
    Text: N Type Package h Transistors Outline U n it I mm 6.7max 3.7max 6 5max ,1.1 ma» mm. m N5Ü' 'f "j 'T - v U s « S <D7V> h £454' ä IZ m & m à 7 1 0 - 220« ^ « ^ li lJj j J 7 7 f 7 ^ ' ^ - v T ' î o • f t fi5i.8.4 S r I ; -Ö- 08±0, RO.S/^i ! I R 0.5


    OCR Scan
    PDF O-220 2SK1967- 2SK782- 2SK1308/A- 2SK1846- B938A B939A 2SK1967 2SD1316

    2sd2520

    Abstract: 2SD2501 2SD2502 2sD2503 2SD1327 2SD1755
    Text: Transistors Selection Guide by Applications and Functions •Silicon Power Transistors (continued) Applica­ tion Func­ tions V ceo (V) lc (A) Package (No.) VcE(sat) typ. (V) lc Ib TO-220(a) (D52) T0-220F(D55) T0-220E(D59) T0-220D(D58) N Type (D42) PNP


    OCR Scan
    PDF O-220 T0-220F T0-220E T0-220D 2SD1719 2SD1775/A 2SD1755 2SB1195 2SD1634 2SD1336/A 2sd2520 2SD2501 2SD2502 2sD2503 2SD1327 2SD1755

    2SD1810

    Abstract: 2SD1111 2SD1694 2SC1280A 2SC3565 2SC4350 2SC4574 2SC2618 2SC3145 2SC4210
    Text: 250 - £ m tt T y p e No. £ Manuf. = ft SANYO M SE TOSHIBA B H □— A 2SC4210 2SD596 □— A 2SC4209 2SD780A 2SD 1782K □— A 2SC42Q9 2SD 1783 □— A y 2 S D 1784 X 2SC3145 2SD686 2SD1627 2SD1784 2 S D 1785 X 2SD n _Jj, OC1M 1 C 0 a —A 2 SC 4 4 8 5


    OCR Scan
    PDF 2SC4210 2SD596 2SC2618 2SD1328 2SC4209 2SD780A 1782K 2SC4209 2SD602A 2SD1810 2SD1111 2SD1694 2SC1280A 2SC3565 2SC4350 2SC4574 2SC2618 2SC3145

    2SD2502

    Abstract: 2sd2520 2sD2503 2SD2375 2SD1755 zener 3,5 2SD1474 2SD1719 2SD2158 T0-220F
    Text: Transistors Selection Guide by Applications and Functions • Silicon Pow er T ransistors (continued) Applica­ V ceo tion Func­ (V) tions Pa ckage (No.) VcE(sat) lc (A) typ. (V) lc Ib T0-220(a) (D56) (A) (mA) NPN T 0 -2 2 0 F (D 5 9 ) T 0 -2 2 0 E (D 6 3 )


    OCR Scan
    PDF T0-220 T0-220F T0-220E T0220D 2SD1474 2SD1719 2SD1755 2SD1776/A 2SD1775/A 2SD2158 2SD2502 2sd2520 2sD2503 2SD2375 2SD1755 zener 3,5 2SD1474 2SD1719 2SD2158

    Transistor 2SA 2SB 2SC 2SD

    Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
    Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle


    OCR Scan
    PDF

    AN3962FB

    Abstract: MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202
    Text: umb Type No. Page MOS L Type No. Page Type No. Page Type No. MN151614 43 MN1882417 45 ▲ MN151630 43 MN1882421 46 MN3204 MN3200 Series Page Type No. Page MN56000 Series 58 63 MN56020 58 68 • O M N 101C 01A 46 MN152810 43 MN188321 45 MN3205 68 MN56030


    OCR Scan
    PDF MN101C01C MN101C01D MN101C025 MN1020003 MN1020004A MN1020004AFB MN1020012A MN1020 12AFA MN1020015 AN3962FB MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202

    Untitled

    Abstract: No abstract text available
    Text: Transistors Selection Guide by Applications and Functions • Silicon Power Transistors (continued) Applica­ V ceo tion Func­ (V) tions High hre lc (A) Pa ckage (No.) VcE(sat) typ. (V) lc Ib (A) (mA) T0-220(a) (D56) NPN T 0 -2 2 0 F (D 5 9 ) T 0 -2 2 0 E (D 6 3 )


    OCR Scan
    PDF T0-220 2SD1474 2SD1776/A 2SD2158 2SD1775/A 2SD1719 2SD1336/A 2SB1108 2SB1193 2SD1608

    D1274A

    Abstract: B1317 C4714 D1707 b1108 c2258 transistor D2052 transistor transistor b1154 2sD2504 transistor B1398
    Text: Transistors Selection Guide by Packages • SS Mini Type Packages (D1) \ V C E 0 (V) 10 lc (mA) \ pc= i 25 mw 15 20 40 50 150 185 2SC4627 A 2SC5021 -2SA1790 >2SC4626 2SC4655 15 30 2SA1806 2SC4809 2SC5295 (65mA) 2SC4808 50 80 2SD2345 (2SA1791 i 2SC4656 2SC4691


    OCR Scan
    PDF 2SC4627 2SC5021 -2SA1790 2SC4626 2SC4655 2SC4809 2SC5295 2SC4808 2SA1806 2SD2345 D1274A B1317 C4714 D1707 b1108 c2258 transistor D2052 transistor transistor b1154 2sD2504 transistor B1398