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    2SD1859 Search Results

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    2SD1859 Price and Stock

    ROHM Semiconductor 2SD1859TV2R

    TRANS NPN 80V 0.7A ATV
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    DigiKey 2SD1859TV2R Ammo Pack 2,500
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    ROHM Semiconductor 2SD1859TV2P

    TRANS GP BJT NPN 80V 0.7A 3-PIN
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    ROHM Semiconductor 2SD1859TV2Q

    TRANS NPN 80V 0.7A ATV
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    DigiKey 2SD1859TV2Q Ammo Pack 2,500
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    Quest Components 2SD1859TV2Q 6,000
    • 1 $0.676
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    • 1000 $0.2704
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    2SD1859 Datasheets (13)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SD1859 Various Russian Datasheets Transistor Original PDF
    2SD1859 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SD1859 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SD1859 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SD1859 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SD1859 ROHM Medium Power Amp. Epitaxial Planar NPN Silicon Transistors Scan PDF
    2SD1859 ROHM ATR, ATV Transistors Scan PDF
    2SD1859 ROHM ATR / ATV Transistors Scan PDF
    2SD1859 Toshiba MEDIUM POWER TRANSISTOR(-80V -0.7A) Scan PDF
    2SD1859TV2Q ROHM TRANS DRIVER NPN 80V 0.7A ATV Original PDF
    2SD1859TV2Q ROHM Medium Power Transistor (80 V, 0.7 A) Original PDF
    2SD1859TV2R ROHM TRANS DRIVER NPN 80V 0.7A ATV Original PDF
    2SD1859TV2R ROHM Medium Power Transistor (80 V, 0.7 A) Original PDF

    2SD1859 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2Sb1238

    Abstract: 2SB1189 2SD1767 2SD1859 T100 ic T100 bd marking code transistor ROHM
    Text: 2SB1189 / 2SB1238 Transistors Medium power transistor −80V, −0.7A 2SB1189 / 2SB1238 !External dimensions (Units : mm) !Features 1) High breakdown voltage, BVCEO=−80V, and high current, IC=−0.7A. 2) Complements the 2SD1767 / 2SD1859. 2SB1189 4.0 1.5


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    2SB1189 2SB1238 2SD1767 2SD1859. 2SB1189 SC-62 2Sb1238 2SD1859 T100 ic T100 bd marking code transistor ROHM PDF

    Untitled

    Abstract: No abstract text available
    Text: Transistors 2SB1189 / 2SB1238 / 2SB899F 2SD1767 / 2SD1859 / 2SD1200F 96-618-B13 (96-750-D13) 278


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    2SB1189 2SB1238 2SB899F 2SD1767 2SD1859 2SD1200F 96-618-B13) 96-750-D13) PDF

    transistor 2sb1238

    Abstract: 2sb1238
    Text: 2SB1189 / 2SB1238 Transistors Medium power transistor −80V, −0.7A 2SB1189 / 2SB1238 !External dimensions (Units : mm) !Features 1) High breakdown voltage, BVCEO=−80V, and high current, IC=−0.7A. 2) Complements the 2SD1767 / 2SD1859. 2SB1189 4.0 1.5


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    2SB1189 2SB1238 2SD1767 2SD1859. 2SB1189 2SB1238 SC-62 transistor 2sb1238 PDF

    2SD1859

    Abstract: 2SB1189 2SB1238 2SD1767 T100 sc621
    Text: 2SD1767 / 2SD1859 Transistors Medium power transistor 80V, 0.7A 2SD1767 / 2SD1859 !External dimensions (Units : mm) !Features 1) High breakdown voltage, BVCEO=80V, and high current, IC=0.7A. 2) Complements the 2SB1189 / 2SB1238. 2SD1767 4.0 1.5 0.4 1.0 VCBO


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    2SD1767 2SD1859 2SB1189 2SB1238. 2SD1767 SC-62 2SD1859 2SB1238 T100 sc621 PDF

    2SD1859

    Abstract: No abstract text available
    Text: 2SD1767 / 2SD1859 Transistors Medium power transistor 80V, 0.7A 2SD1767 / 2SD1859 zExternal dimensions (Unit : mm) zFeatures 1) High breakdown voltage, BVCEO=80V, and high current, IC=0.7A. 2) Complements the 2SB1189 / 2SB1238. 2SD1767 4.0 1.5 0.4 1.0 VCBO


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    2SD1767 2SD1859 2SB1189 2SB1238. 2SD1767 2SD1859 SC-62 PDF

    2SD1859

    Abstract: 2SD1767 2SB1189 2SB1238 T100
    Text: 2SD1767 / 2SD1859 Transistors Medium power transistor 80V, 0.7A 2SD1767 / 2SD1859 zExternal dimensions (Unit : mm) zFeatures 1) High breakdown voltage, BVCEO=80V, and high current, IC=0.7A. 2) Complements the 2SB1189 / 2SB1238. 2SD1767 4.0 1.5 0.4 1.0 VCBO


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    2SD1767 2SD1859 2SB1189 2SB1238. 2SD1767 2SD1859 2SB1238 T100 PDF

    702 RE

    Abstract: transistor 702 2SD1859
    Text: SPICE PARAMETER 2SD1859 by ROHM TR Div. * 2SD1859 NPN BJT model * Date: 2006/11/17 .MODEL 2SD1859 NPN + IS=150.00E-15 + BF=256.16 + VAF=15.861 + IKF=1.3147 + ISE=150.00E-15 + NE=1.3227 + BR=9.2084 + VAR=100 + IKR=.2032 + ISC=16.456E-12 + NC=1.3790 + NK=.77836


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    2SD1859 Q2SD1859 00E-15 456E-12 000E-3 062E-3 16E-12 114E-12 702 RE transistor 702 2SD1859 PDF

    2SB1238

    Abstract: No abstract text available
    Text: Medium power transistor 80V, 0.7A 2SB1189 / 2SB1238 Features 1) High breakdown voltage, BVCEO=80V, and high current, IC=0.7A. 2) Complements the 2SD1767 / 2SD1859. Dimensions (Unit : mm) 2SB1189 4.0 1.5 0.4 1.0 Collector power dissipation


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    2SB1189 2SB1238 2SD1767 2SD1859. 2SB1189 2SB1238 SC-62 R1010A PDF

    2SB1189

    Abstract: 2SB1238 2SD1767 2SD1859 T100
    Text: 2SB1189 / 2SB1238 Transistors Medium power transistor −80V, −0.7A 2SB1189 / 2SB1238 zExternal dimensions (Unit : mm) zFeatures 1) High breakdown voltage, BVCEO=−80V, and high current, IC=−0.7A. 2) Complements the 2SD1767 / 2SD1859. 2SB1189 4.0 1.5


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    2SB1189 2SB1238 2SD1767 2SD1859. 2SB1189 SC-62 2SB1238 2SD1859 T100 PDF

    2sd1767

    Abstract: 2SD1859
    Text: 2SD1767 / 2SD1859 Transistors Medium power transistor 80V, 0.7A 2SD1767 / 2SD1859 !External dimensions (Units : mm) !Features 1) High breakdown voltage, BVCEO=80V, and high current, IC=0.7A. 2) Complements the 2SB1189 / 2SB1238. 2SD1767 4.0 1.5 0.4 1.0 VCBO


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    2SD1767 2SD1859 2SB1189 2SB1238. 2SD1767 2SD1859 SC-62 PDF

    2SB1238

    Abstract: 2SB1189 2SD1767 2SD1859 T100
    Text: Medium power transistor 80V, 0.7A 2SB1189 / 2SB1238 Dimensions (Unit : mm) Features 1) High breakdown voltage, BVCEO=80V, and high current, IC=0.7A. 2) Complements the 2SD1767 / 2SD1859. 2SB1189 4.0 1.5 0.4 1.0 VCBO −80 Collector-emitter voltage


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    2SB1189 2SB1238 2SD1767 2SD1859. 2SB1189 2SB1238 2SD1859 T100 PDF

    sn76131

    Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
    Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157


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    2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B PDF

    k2645

    Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
    Text: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt


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    MK135 MK136 MK137 MK138 MK139 MK140 Mk142 MK145 MK155 157kr k2645 k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417 PDF

    alternator diode 1776 B

    Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
    Text: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)


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    Hig86-755-3679515 alternator diode 1776 B 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent PDF

    2SD1659

    Abstract: 2SB689F 2sb123b
    Text: 2SB1189 / 2SB1238 / 2SB899F 2SD1767 / 2SD1859 / 2SD1200F Transistors I Medium Power Transistor —80V, —0.7A 2 S B 1 189 / 2 S B 1 238 / 2 S B 8 8 9 F •F e a tu re s • A b s o lu t e m axim um ratings (T a = 2 5 'C ) 1 ) High breakdown voltage and high current. (—80V, - 0.7A)


    OCR Scan
    2SB1189 2SB1238 2SB899F 2SD1767 2SD1859 2SD1200F --80V, 2SB123B 2SB689F -126FP 2SD1659 PDF

    SS138

    Abstract: 2SB1189 2SB1238 2SB889F 2SB899F 2SD1767 2SD1859 2SB899
    Text: 2SB1189 12SB1238 / 2SB899F 2SD1767 / 2SD1859 12SD1200F T ra n sisto rs I M e d iu m P o w e r T r a n s is t o r — 80V, — 0.7A 2 S B 1 189 / 2S B 1238 / 2S B 889F • A b s o l u t e m a x im u m r a t in g * ( T a — 2 5 ^ ) • F * a tu r* * 1 > H i g h b r e a k d o w n v o t in g o . B V e c o


    OCR Scan
    2SB1189 2SB1238 2SB899F 2SD1767 2SD1859 12SD1200F 2SB889F PSB1189 SS138 2SB889F 2SB899 PDF

    D1226M

    Abstract: D1226 T2721 2SD1226M 2SB1238 2SD1859 251C 2SB910M L0oa 80-V1
    Text: h - 7 > p ' Z £ /Transistors ROHM CO 2SD1226M/2SD1859 LT» MQE D • 7 ö 2 ß ci*:J c] 0 D G S 0 3 Ö 3 H R HM 2SD1226M Xt°^df-vT;U70U-^NPN yU3>h7>y'X^ Power Amp. 2SD1359 Epitaxial Planar NPN Silicon Transistors 7 ^ 2 7 -2 .1 • $ Ä • W F i't'sÉ E i/D im e n sio n s Unit : mm


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    2SD1226M/2SD1859 D1226M 700mA 2SB910M/2SB12381 2SD1226M 2SD1859 700mA 2SB910M, 2SB1238. D1226 T2721 2SD1226M 2SB1238 2SD1859 251C 2SB910M L0oa 80-V1 PDF

    2sd1226

    Abstract: 2SD1859 2SB1238 B1859
    Text: N "7 > v $ /Transistors 2 S D 1 2 2 6 M 2 3 ^ ^ 0 3 0 2SD1226M/2SD1859 '> U 3 > Epitaxial Planar NPN Silicon Transistors /Medium Power Amp. • fl-Jß ^jilS I/D im en sio ns Unit : mm 1) Pc=1W t ± t ^ o 2) ÏB Œ , V Ceo = 80V, lc=700mA 3) 2SB910M /2SB1238<t=l>^'Jc


    OCR Scan
    2SD1226M/2SD1859 700mA 2SB910M 700mA 2SB910M, 2SB1238. 2sd1226 2SD1859 2SB1238 B1859 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SB1189 / 2SB1238 / 2SB899F 2SD1767 / 2SD1859 / 2SD1200F Transistors Medium Power Transistor —80V, —0.7A I 2SB1189 / 2SB1238 / 2SB889F •Features •A b s o lu te maximum ratings ( T a ^ î S t ) 1 ) High breakdown voltage and high current. {—60V, —0.7A)


    OCR Scan
    2SB1189 2SB1238 2SB899F 2SD1767 2SD1859 2SD1200F 2SB889F 2SD1767/2SD1859/2SD1200F. PDF

    2SD1859

    Abstract: transistor 2sb1238 2SB1238
    Text: 2SD1859 Transistor, NPN Features Dimensions Units : mm • • • available in ATV TV2 package high power: Pq = 1 W high breakdown voltage and large current capacity: VCEO = 80 V, lc = 700 mA • complementary pair with 2SB1238 Applications • medium power amplifier


    OCR Scan
    2SD1859 28D1859 2SB1238 2SD1859 transistor 2sb1238 PDF

    2SD1878

    Abstract: 2SB1240 2SD1853 2SD1855A 2SD1877 2SD188 2SD1851 2SD1852 2SD1854 2SD1855
    Text: - 270 - <Ta=25"C, *EPÌÌTc=25'C fi <3 & Vq r o V) 2SD1851 2SD1852 2SD1853 2SD1854 2SD1855 2SD1855A 2SD1856 2SD1857 2SD1858 2SD1859 2SD1860 2SD1861 2SD1862 2SD1863 2 SDÌ8 64 2SD1865 2SD1866 2SD1867 2SD1868 2SD1869 2SD1870 2SD1876 2SD1877 2SD1878 2SD1879


    OCR Scan
    2SD1851 2SD1852 2SD1853 2SD1854 2SD1855 2SD1855A 2SD1856 2SD1857 12ECB, 2SD1867 2SD1878 2SB1240 2SD1853 2SD1877 2SD188 2SD1851 2SD1854 PDF

    B1238

    Abstract: 2SB1238 transistor 2sb1238
    Text: 2SB1238 Transistor, PNP Features Dimensions Units : mm • available in ATV TV2 package • high power: Pc = 1 W 2SB1238 (ATVTV2) • high breakdown voltage and large current capacity: V CEO = -80 V, lc = -0.7 A • complementary pair with 2SD1859 Applications


    OCR Scan
    2SB1238 2SD1859 2SB1238 B1238 transistor 2sb1238 PDF

    2SB1232

    Abstract: 2SB1240 2SB1255 2SB1223 2SB1224 2SB1225 2SB1226 2SB1227 2SB1228 2SB1229
    Text: - 82 - 5 Ta=25cC, *EPteTc=25'C Vcso Vc e o (V) (V) fu (A) (W) fó 4# tt (Ta=25'C) [*EP (3typ{È] hp Pc* (max) (uA) <W) VcB (V) (min) (max) Vc e (V) Ic/ I e (A) (max) (V) ' , —' (V) le (A) Ib (A) PD -70 -60 -4 2 20 -100 -40 2000 -2 -2 -1.5 -2 -2 -0.004


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    2SB1223 2SB1224 2SB1225 2SB1226 2SB1227 2SB1228 2SB1229 2SD1891 O-220Fa) 2SB1251 2SB1232 2SB1240 2SB1255 2SB1223 2SB1225 2SB1226 PDF

    2SB909M

    Abstract: 2SC5083 2SD2315 2sb1242 2SB1460 2501863 2SD1225M 2SA1548 2Sc4776 2SB1130
    Text: ATR • ATV Approximately the same size as the TO -92 with up to 1 W power capability. Taped type for automated placement or bulk packaging available. Package , VcEO V ATV ATR A pplication ^VcES ^ V c E R Part No. - 2SA937AMLN L ow Noise 2SA937AM Pre Am p


    OCR Scan
    2SA937AMLN 2SC2021MLN 2SA937AM 2SA1547A 2SC2021M 2SC4010 2SC4776M 2SC4778 2SA874M 2SA1548 2SB909M 2SC5083 2SD2315 2sb1242 2SB1460 2501863 2SD1225M 2Sc4776 2SB1130 PDF