w2a transistor

Abstract: transistor w2a 2SB1340 2SD1869 2SD1889 transistor 120v transistor w2a 40
Contextual Info: 2SB1340 2SD1889 Transistors I Power Transistor —120V, — 6A 2SB1340 •F e a t u r e s 1 ) Darlington connection for high DC current gain. 2 ) Bulll-ln resistor between base and em itter. 3 ) Built-In dam per diode. 4 ) Com plem ents the 2S D 1869. ^Absolute m axim um ratings ( T a = 2 5 'C )

Contextual Info: 2SB1340 2SD1889 Transistors I Power Transistor 120V, —6A 2SB1340 •F e a tu re s •A b s o lu te maximum ratings (Ta—2 5 ^ } 1) 2) 3) 4) P aram eter Collector-base voltage C oiiector-em itter voltage Darlington connection fo r high D C current gain.

lc 3101

Abstract: k 351 transistor 2sd darlington L001 transistor Mu
Contextual Info: 2SD1889 Transistor, NPN, Darlington Features Dimensions Units : mm • available in TO-220FP (SC-67) package • Darlington connection provides high dc current gain (hFE) 2SD1889 (TO-220FP) 10.0 • damper diode is incorporated • built-in resistors between base and

Contextual Info: 2SD1889 Transistor, NPN, Darlington Features Dimensions Units : mm • available in TO-220FP (SC-67) package • Darlington connection provides high dc current gain (hFE) 2SD1889 (TO-220FP) • damper diode is incorporated • built-in resistors between base and

2SB1340

Abstract: 2SD1889
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -120V(Min) ·High DC Current Gain: hFE= 2000(Min)@ (VCE= -3V, IC= -2A) ·Complement to Type 2SD1889 APPLICATIONS

Contextual Info: 2SD1889 Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)120 V(BR)CBO (V) I(C) Max. (A)6.0 Absolute Max. Power Diss. (W)30 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.2.0k h(FE) Max. Current gain.20k

2SD1889

Abstract: 2SB1340
Contextual Info: SavantIC Semiconductor Product Specification 2SD1889 Silicon NPN Power Transistors DESCRIPTION •With TO-220Fa package ·DARLINGTON ·Complement to type 2SB1340 ·High DC current gain APPLICATIONS ·Low frequency power amplification PINNING PIN DESCRIPTION

2SD1889

Abstract: 2SB1340
Contextual Info: Inchange Semiconductor Product Specification 2SD1889 Silicon NPN Power Transistors DESCRIPTION ・With TO-220Fa package ・DARLINGTON ・Complement to type 2SB1340 ・High DC current gain APPLICATIONS ・Low frequency power amplification PINNING PIN DESCRIPTION

2SD1889

Contextual Info: h 7 > V 7. £ /T ran sisto rs 2SD1889 2SD1889 X N P N V ' J U > h =7> Epitaxial Planar NPN Silicon Transistor Darlington 1SJi;$1i:fr$^ ffl/Lo w Freq. Power Amp. • • « ft \lii[2]/D im ensions (Unit : mm) 1) y - ' J > h > i i l i T h FE A ' ^ o 2) K r t lio

2SD1889

Abstract: 2SB1340
Contextual Info: Transistors 2SB1340 2SD1889 96-650-B88 (96-765-D88) 288

2SD188

Contextual Info: 2SB1340 2SD1889 Transistors Power Transistor —120V, —6A 2SB1340 I •F e a tu re s 1 ) Darlington connection for high DC current gain. 2 ) Built-In resistor between base and emitter. 3 ) Built-In damper diode. 4 ) Complements the 2SD1889. •A b s o lu te maximum ratings (Ta“ 25,C )

2SB1340

Abstract: ct 1975 2SD1889 SC-75A two transistors TO-126F 4B0G
Contextual Info: 2SB1340 2SD1889 Transistors Power Transistor —'1 20V, —6A I 2SB1340 •F u tu re * 1) 2) 3) 4) • A b s o lu t e m axim u m ratin g s (T a — 25"C ) Darlington connection fo r high DC current gain. Built-In resistor between base and emitter. Built-In damper diode.

nec 2sc3157

Abstract: 2SD999 2SD1296 2SD1317 2SD1406 2sc3694 2SC3760 2SD2061 2sd2239 nec 1678
Contextual Info: - 2SD 2SD 2SD 2SD 2SD 2SD 2SD 2SD 2SD 2SO 2SD 2SD 1669 y 1673 1676 — ' 1677 1678 1680 1682 ^ 1683 " 1684 •* 1685 1686 □ — A = * = = n n M. 2 TOSHIBA B m NEC ±L HITACHI 2SD1622 2SC2883 2SD1406 2SC3299 2SD1412 2SD1435K 2SD136S 2SD1662 fó T -E m 2SC3419

2SD410a

Abstract: 2SD650 2SD319 2SD524 2SD533 el 431 2SC1669 2SD473 2SD1765 NEC 426
Contextual Info: 214 - m m en m JIC m h SANYO 2SD1459 2SD1459 m ni m tt € s « Type No. Manuf. 2SD 394 h m. 2SD 395 H * 2SD 396 S ÍL 2SD 400 « H 2SD 401 , 2SD 402 » B S 2SD 404 S S 2SD 405 B S 2SD 406 B S 2SD 407 , OU 95 i0u sito«-' « 2SD 409 ' b m 2SD 410 a n 2SD 411 2SD 412 ^

2SB1335A

Abstract: 2SD2037 2SD2033 2SD2061 28c43 2sb1357 2SB1359 2sd2041 2SD2096 2SD1856
Contextual Info: BSE D ROHM CORP Tr T ä S a n T Q O O S TQ Ì 7 Transistors 11 GaAs Dual-Gate MES FETs Type 3SK 212 Function Absolute Maximum Ratings Ta=25°C Dimensions (Unit: mm) Electrical Characteristics (Ta=25°C) Vos(V) lo(mA) PD(mW) Tch(°C) NF(dB) PG(dB) f(MHz)

RTIP144C

Abstract: RTIN141C RTIN141S 2SD947 equivalent 2SD612K equivalent of transistor 2SA1115 RTIN241C rtip241 2sd880 equivalent RTIN140C
Contextual Info: m&ttm -urn h "7 > v X £ /T ra n sisto rs ddp h 7> y of Transistor Equivalent Products S M t r o iS H li, L T 2 fiJffl< t £ £ i \ LT IS * * * ' 6 S & It should be borne in mind that following listings are made according to the transistors’ maximum ratings.

2SD2037

Abstract: 2SC4354 2sd2041 2SD2036 2SB1335 2SB1359 2SD1832 2sd1856 2SD2034 2SB1293
Contextual Info: R OHN CORP □1 D E l ? f l a f l 1 cn -i" f nfiffirr DGDllta 3 W - I '-” I 7 ~ -Z 9 * & / D P i . ; ij 4 * ^ » p p ^ ^ É â à iÈ a w h ià i^ te ^ ^ ÿ iB ^ iïa S sà iÉ ijiû ite a ijie e Jje Je Ji • TO-220, TO-220FP Types p - , * New Products

STK411-230E

Abstract: STK411-220E stk442-130 UPC2581V PAL005A FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
Contextual Info: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for

2SB1340

Contextual Info: 2SB1340 Transistor, PNP Features • available in TO-220 FP SC-67 package • Darlington connection provides high dc current gain (hFE) Dimensions (Units: mm) 2SB1340 (TO-220 FP) ««« +0-3 7' -V—o 1 ¿ 3 .U 0 .1 r— i • • damper diode is incorporated

B1335A

Abstract: D2033A D1855A D2037 B1186A 2SC457 2sb1335a d2038 B 1186a B1085A
Contextual Info: 1 rarisiston, ¡ m m • Power Transistors • TQ-220, TO-22QFP, HRT Types Vctc C O LLE CTOR TO EMITTER VOLTAGE V 60 50 T 100 120 200 160 300 0 1 400 2SC4505 PSD 1562 15 ■ 2S D 1562A 2SB 1085 2S B 1085A 2S D 1763 | 2SD 1763A 2SB 1186 | 2SB 1186A 2SD 2033

IMX5T108

Abstract: DTC144EN 4AE12 MP5C02 2SB1043 ICP-S2.3TN dta115ef DTA144TSATP DTC124EVA mmst8598t146
Contextual Info: Transistors •Maintenance product list Maintenance model Alternate model Maintenance model Alternate model 2SA1543M 2SA933ASTP 2SC5040K 2SC2412KT146 2SA1549 2SA830STP 2SC5072 2SC4617TL 2SA1554 2SA821STP 2SD1469M 2SD1865TV2 2SA1809 2SA1776TV2 2SD1778 2SD1855

C2021M

Abstract: B1568 mosfet ftr 03 2SC1B15 2SA1904 Mosfet FTR 03-E 2SC2021E 2SC1740 transistor 2SK2295 2S0240
Contextual Info: Transistor Quick reference Package-A ^plication Application v CEO V •V ces *VcEH Low rbb' Head Amp Low Noise Package FTR FTL ATR ATV SPT / 2SB737 V 2SD786 40 TO-92L 40 2SC2021LJNE) 2SB821 50 / 2SA937ALN \2SC2021LN(RS) 2SB1276 ( 2SA933A 2SA937AM \2SC1740(QR&)

2SC144

Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *

d2396

Abstract: TRANSISTOR PNP B1443 D2396 equivalent B1569A TRANSISTORS PNP 50 V 1 A B1443 B1186A transistor c5147 b1344 transistor equivalent b1443 K2460
Contextual Info: Transistors Transistors Products Tables Surface mounting types • M O S FET • Automatic mounting is possible : Products are housed in a package which supports automatic mounting. • 4V drive types : Direct drive from 1C allows reduction of components elimination of buffer transistor .