Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    2SD1895 Search Results

    2SD1895 Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SD1895 Panasonic NPN Transistor Darlington Original PDF
    2SD1895 Panasonic Silicon NPN triple diffusion planar type Darlington Original PDF
    2SD1895 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SD1895 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SD1895 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SD1895 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SD1895P Panasonic Silicon NPN Triple Diffusion Planar Type Darlington Power Transistor Original PDF
    2SD1895Q Panasonic Silicon NPN Triple Diffusion Planar Type Darlington Power Transistor Original PDF

    2SD1895 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SB1255

    Abstract: 2SD1895
    Text: JMnic Product Specification Silicon PNP Darlington Power Transistors 2SB1255 DESCRIPTION ・With TO-3PFa package ・Optimum for 90W Hi-Fi output ・High foward current transfer ratio hFE ・Low collector-emitter saturation voltage ・Complement to type 2SD1895


    Original     		PDF 2SB1255 2SD1895 Collector100 -140V; 2SB1255 2SD1895

    2SB1255

    Abstract: 2SD1895
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •High DC Current Gain: hFE= 5000 Min @IC= -6A ·Low-Collector Saturation Voltage: VCE(sat)= -2.5V(Max.)@IC= -7A ·Complement to Type 2SD1895 APPLICATIONS


    Original     		PDF 2SD1895 -160V; -140V; 2SB1255 2SD1895

    2SB1255

    Abstract: 2SD1895
    Text: Power Transistors 2SB1255 Silicon PNP epitaxial planar type Darlington Unit: mm For power amplification Complementary to 2SD1895 0.7 21.0±0.5 φ 3.2±0.1 15.0±0.2 • Optimum for 90 W Hi-Fi output • High forward current transfer ratio hFE: 5 000 to 30 000


    Original     		PDF 2SB1255 2SD1895 2SB1255 2SD1895

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors 2SB1255 Silicon PNP epitaxial planar type darlington Unit: mm For power amplification Complementary to 2SD1895 5.0±0.2 3.2 11.0±0.2 φ 3.2±0.1 15.0±0.2 (3.5) Solder Dip • Optimum for 90 W HiFi output • High forward current transfer ratio hFE


    Original     		PDF 2SB1255 2SD1895

    2SB1255

    Abstract: 2SD1895
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1255 Silicon PNP epitaxial planar type darlington Unit: mm For power amplification Complementary to 2SD1895 5.0±0.2 (0.7) 15.0±0.3 (3.2) 15.0±0.2 φ 3.2±0.1 (3.5) Solder Dip


    Original     		PDF 2002/95/EC) 2SB1255 2SD1895 2SB1255 2SD1895

    2SB1255

    Abstract: 2SD1895
    Text: Power Transistors 2SD1895 Silicon NPN triple diffusion planar type darlington Unit: mm For power amplification Complementary to 2SB1255 15.0±0.2 φ 3.2±0.1 2.0±0.2 2.0±0.1 0.6±0.2 1.1±0.1 5.45±0.3 • Absolute Maximum Ratings TC = 25°C 10.9±0.5 Parameter


    Original     		PDF 2SD1895 2SB1255 2SB1255 2SD1895

    2SB1255

    Abstract: 2SD1895
    Text: Inchange Semiconductor Product Specification 2SB1255 Silicon PNP Darlington Power Transistors DESCRIPTION ・With TO-3PFa package ・Optimum for 90W Hi-Fi output ・High foward current transfer ratio hFE ・Low collector-emitter saturation voltage ・Complement to type 2SD1895


    Original     		PDF 2SB1255 2SD1895 2SB1255 2SD1895

    2SB1255

    Abstract: HIGH VOLTAGE SWITCHING NPN POWER DARLINGTON 2SD1895
    Text: Inchange Semiconductor Product Specification Silicon NPN Darlington Power Transistors 2SD1895 DESCRIPTION ・With TO-3PFa package ・High DC current gain ・Low collector saturation voltage ・Complement to type 2SB1255 APPLICATIONS ・Power amplification


    Original     		PDF 2SD1895 2SB1255 2SB1255 HIGH VOLTAGE SWITCHING NPN POWER DARLINGTON 2SD1895

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1255 Silicon PNP epitaxial planar type darlington Unit: mm For power amplification Complementary to 2SD1895 5.0±0.2 (0.7) 15.0±0.3 (3.2) VCE = −10 V, IC = − 0.5 A, f = 1 MHz


    Original     		PDF 2002/95/EC) 2SB1255 2SD1895

    2SB1255

    Abstract: 2SD1895
    Text: Power Transistors 2SB1255 Silicon PNP epitaxial planar type Darlington For power amplification Complementary to 2SD1895 Unit: mm ● ● 0.7 Optimum for 90W HiFi output High foward current transfer ratio hFE: 5000 to 30000 Low collector to emitter saturation voltage VCE sat : < –2.5V


    Original     		PDF 2SB1255 2SD1895 2SB1255 2SD1895

    PT10V

    Abstract: 2SB1255 2SD1895
    Text: Power Transistors 2SD1895 Silicon NPN triple diffusion planar type Darlington For power amplification Complementary to 2SB1255 Unit: mm ● ● 0.7 Optimum for 90W HiFi output High foward current transfer ratio hFE: 5000 to 30000 Low collector to emitter saturation voltage VCE sat : <2.5V


    Original     		PDF 2SD1895 2SB1255 PT10V 2SB1255 2SD1895

    2SB1255

    Abstract: 2SD1895 IC303
    Text: Power Transistors 2SD1895 Silicon NPN triple diffusion planar type Darlington For power amplification Complementary to 2SB1255 Unit: mm ● ● 0.7 Optimum for 90W HiFi output High foward current transfer ratio hFE: 5000 to 30000 Low collector to emitter saturation voltage VCE sat : <2.5V


    Original     		PDF 2SD1895 2SB1255 2SB1255 2SD1895 IC303

    2SB1255

    Abstract: 2SD1895
    Text: Power Transistors 2SB1255 Silicon PNP epitaxial planar type Darlington Unit: mm For power amplification Complementary to 2SD1895 0.7 21.0±0.5 φ 3.2±0.1 15.0±0.2 • Optimum for 90 W Hi-Fi output • High forward current transfer ratio hFE: 5 000 to 30 000


    Original     		PDF 2SB1255 2SD1895 2SB1255 2SD1895

    2SB1255

    Abstract: 2SD1895
    Text: SavantIC Semiconductor Product Specification Silicon PNP Darlington Power Transistors 2SB1255 DESCRIPTION •With TO-3PFa package ·Optimum for 90W Hi-Fi output ·High foward current transfer ratio hFE ·Low collector-emitter saturation voltage ·Complement to type 2SD1895


    Original     		PDF 2SB1255 2SD1895 -12llector -140V; 2SB1255 2SD1895

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors 2SD1895 Silicon NPN triple diffusion planar type darlington Unit: mm For power amplification Complementary to 2SB1255 5.0±0.2 3.2 11.0±0.2 φ 3.2±0.1 15.0±0.2 (3.5) Solder Dip • Optimum for 60 W HiFi output • High forward current transfer ratio hFE


    Original     		PDF 2SD1895 2SB1255

    2SB1255

    Abstract: 2SD1895 SC-92
    Text: Power Transistors 2SB1255 Silicon PNP epitaxial planar type darlington Unit: mm For power amplification Complementary to 2SD1895 15.0±0.2 φ 3.2±0.1 2.0±0.2 2.0±0.1 0.6±0.2 1.1±0.1 5.45±0.3 • Absolute Maximum Ratings TC = 25°C 10.9±0.5 Parameter


    Original     		PDF 2SB1255 2SD1895 2SB1255 2SD1895 SC-92

    2SB1255

    Abstract: 2sd1895
    Text: SavantIC Semiconductor Product Specification Silicon NPN Darlington Power Transistors 2SD1895 DESCRIPTION •With TO-3PFa package ·High DC current gain ·Low collector saturation voltage ·Complement to type 2SB1255 APPLICATIONS ·Power amplification ·Optimum for 90W high-fidelity


    Original     		PDF 2SD1895 2SB1255 2SB1255 2sd1895

    2SB1255

    Abstract: 2SD1895
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1895 Silicon NPN triple diffusion planar type darlington Unit: mm For power amplification Complementary to 2SB1255 5.0±0.2 (0.7) 15.0±0.3 (3.2) 15.0±0.2 φ 3.2±0.1 (3.5)


    Original     		PDF 2002/95/EC) 2SD1895 2SB1255 2SB1255 2SD1895

    2sc5929

    Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
    Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original     		PDF responsibiliXP08081 XP08546 XP0A554 XP0D873 XP0D874 XP0D875 XP0E554 2sc5929 MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE

    2SB1252

    Abstract: 2SD1895
    Text: P o w er T ra n s is to rs 2SD1895 2SD1895 Silicon NPN Triple-Diffused Planar Darlington Type Package Dim ensions Power A m plifier C om plem entary Pair with 2SB1252 U nit ! mm 5.2max. 1 5 .5 m a x . • Features <z> • O ptim u m for 90W hi-fi o u tp u t


    OCR Scan     		PDF 2SD1895 2SB1252 2SB1252 2SD1895

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors 2SD1895 2SD1895 Silicon NPN Triple-Diffused Planar Darlington Type Package Dim ensions Power A m plifier C om plem entary Pair with 2SB1252 U n it ! mm • Features • • • • Optimum for 90W hi-fi output High DC current gain hi.E : 5000~30000


    OCR Scan     		PDF 2SD1895 2SB1252 i32flS2

    2SD1915

    Abstract: T0-220MF 2SD1899-Z 2SB1255 2SD1907 2SD1891 2SD1892 2SD1893 2SD1894 2SD1895
    Text: - 272 - Ta=25V, *EPiäTc=25'C -Ö r-L -a m ^ VcEO (V) 2SD1891 2SD1892 2SD1893 2SD1894 2SD1895 2SD1896 2SD1897 2SD1899 2SD1899-Z 2SD1902 2SD1903 2SD1904 2SD1905 2SM906 2SD1907 2SD1908 2SD1909 2SD1910 2SD1911 o c n i oí o ¿JL/1 ilIL 2SD1913 2SD1914 2SD1915


    OCR Scan     		PDF EPHTc-25 2SD1891 2SD1892 2SD1893 2SD1894 2SD1895 2SD1896 2SD1897 2SD1912 2SB1274 2SD1915 T0-220MF 2SD1899-Z 2SB1255 2SD1907

    Untitled

    Abstract: No abstract text available
    Text: Power T ransistors 2SB1255 2SB1255 Silicon PNP Epitaxial Planar Darlington Type Package Dim ensions Pow er Amplifier Com plem entary Pair with 2SD1895 • Features • Optimum for 90W hi-fi output • High DC c u rre n t gain hpE : 5000—30000 • Low collector-eim itter saturation voltage (Vcei. mi): < - 2 .5 V


    OCR Scan     		PDF 2SB1255 2SD1895 2sbi255

    2SB1531

    Abstract: 2SD2340 equivalent 2SB1255 2sb1492 2SD2328 2SA1185 2SB1421 2SC4535 2SD1457 2SD1457A
    Text: Transistors Selection Guide by Applications and Functions • Silicon Large Power Transistors Application Functions Vceo (V) General-use lc VcE(sat) (A) (V) Darlington High-hfE Ib (mA) <0.8 (A) 7 TOP-3(a) (D64) 700 TOP-3F(a) (D67) 50 7 100 5 <2 3 300 140


    OCR Scan     		PDF 2SA1185 2SB1054/2SD1485 2SB1421 2SB1154/2SD1705 2SB1155/2SD1706 2SB1156/2SD1707 2SD1457 2SD1457A 2SC4535 2SD1641 2SB1531 2SD2340 equivalent 2SB1255 2sb1492 2SD2328 2SA1185 2SB1421 2SC4535 2SD1457 2SD1457A