2SB1255

Abstract: 2SD1895
Contextual Info: JMnic Product Specification Silicon PNP Darlington Power Transistors 2SB1255 DESCRIPTION ・With TO-3PFa package ・Optimum for 90W Hi-Fi output ・High foward current transfer ratio hFE ・Low collector-emitter saturation voltage ・Complement to type 2SD1895

2SB1252

Abstract: 2SD1895
Contextual Info: P o w er T ra n s is to rs 2SD1895 2SD1895 Silicon NPN Triple-Diffused Planar Darlington Type Package Dim ensions Power A m plifier C om plem entary Pair with 2SB1252 U nit ! mm 5.2max. 1 5 .5 m a x . • Features <z> • O ptim u m for 90W hi-fi o u tp u t

2SB1255

Abstract: 2SD1895
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •High DC Current Gain: hFE= 5000 Min @IC= -6A ·Low-Collector Saturation Voltage: VCE(sat)= -2.5V(Max.)@IC= -7A ·Complement to Type 2SD1895 APPLICATIONS

2SB1255

Abstract: 2SD1895
Contextual Info: Power Transistors 2SB1255 Silicon PNP epitaxial planar type Darlington Unit: mm For power amplification Complementary to 2SD1895 0.7 21.0±0.5 φ 3.2±0.1 15.0±0.2 • Optimum for 90 W Hi-Fi output • High forward current transfer ratio hFE: 5 000 to 30 000

Contextual Info: Power Transistors 2SD1895 2SD1895 Silicon NPN Triple-Diffused Planar Darlington Type Package Dim ensions Power A m plifier C om plem entary Pair with 2SB1252 U n it ! mm • Features • • • • Optimum for 90W hi-fi output High DC current gain hi.E : 5000~30000

Contextual Info: Power Transistors 2SB1255 Silicon PNP epitaxial planar type darlington Unit: mm For power amplification Complementary to 2SD1895 5.0±0.2 3.2 11.0±0.2 φ 3.2±0.1 15.0±0.2 (3.5) Solder Dip • Optimum for 90 W HiFi output • High forward current transfer ratio hFE

2SD1915

Abstract: T0-220MF 2SD1899-Z 2SB1255 2SD1907 2SD1891 2SD1892 2SD1893 2SD1894 2SD1895
Contextual Info: - 272 - Ta=25V, *EPiäTc=25'C -Ö r-L -a m ^ VcEO (V) 2SD1891 2SD1892 2SD1893 2SD1894 2SD1895 2SD1896 2SD1897 2SD1899 2SD1899-Z 2SD1902 2SD1903 2SD1904 2SD1905 2SM906 2SD1907 2SD1908 2SD1909 2SD1910 2SD1911 o c n i oí o ¿JL/1 ilIL 2SD1913 2SD1914 2SD1915

2SB1255

Abstract: 2SD1895
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1255 Silicon PNP epitaxial planar type darlington Unit: mm For power amplification Complementary to 2SD1895 5.0±0.2 (0.7) 15.0±0.3 (3.2) 15.0±0.2 φ 3.2±0.1 (3.5) Solder Dip

2SB1255

Abstract: 2SD1895
Contextual Info: Power Transistors 2SD1895 Silicon NPN triple diffusion planar type darlington Unit: mm For power amplification Complementary to 2SB1255 15.0±0.2 φ 3.2±0.1 2.0±0.2 2.0±0.1 0.6±0.2 1.1±0.1 5.45±0.3 • Absolute Maximum Ratings TC = 25°C 10.9±0.5 Parameter

2SB1255

Abstract: 2SD1895
Contextual Info: Inchange Semiconductor Product Specification 2SB1255 Silicon PNP Darlington Power Transistors DESCRIPTION ・With TO-3PFa package ・Optimum for 90W Hi-Fi output ・High foward current transfer ratio hFE ・Low collector-emitter saturation voltage ・Complement to type 2SD1895

2SB1255

Abstract: HIGH VOLTAGE SWITCHING NPN POWER DARLINGTON 2SD1895
Contextual Info: Inchange Semiconductor Product Specification Silicon NPN Darlington Power Transistors 2SD1895 DESCRIPTION ・With TO-3PFa package ・High DC current gain ・Low collector saturation voltage ・Complement to type 2SB1255 APPLICATIONS ・Power amplification

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1255 Silicon PNP epitaxial planar type darlington Unit: mm For power amplification Complementary to 2SD1895 5.0±0.2 (0.7) 15.0±0.3 (3.2) VCE = −10 V, IC = − 0.5 A, f = 1 MHz

2SB1255

Abstract: 2SD1895
Contextual Info: Power Transistors 2SB1255 Silicon PNP epitaxial planar type Darlington For power amplification Complementary to 2SD1895 Unit: mm ● ● 0.7 Optimum for 90W HiFi output High foward current transfer ratio hFE: 5000 to 30000 Low collector to emitter saturation voltage VCE sat : < –2.5V

PT10V

Abstract: 2SB1255 2SD1895
Contextual Info: Power Transistors 2SD1895 Silicon NPN triple diffusion planar type Darlington For power amplification Complementary to 2SB1255 Unit: mm ● ● 0.7 Optimum for 90W HiFi output High foward current transfer ratio hFE: 5000 to 30000 Low collector to emitter saturation voltage VCE sat : <2.5V

2SB1255

Abstract: 2SD1895
Contextual Info: Power Transistors 2SB1255 Silicon PNP epitaxial planar type Darlington Unit: mm For power amplification Complementary to 2SD1895 0.7 21.0±0.5 φ 3.2±0.1 15.0±0.2 • Optimum for 90 W Hi-Fi output • High forward current transfer ratio hFE: 5 000 to 30 000

2SB1255

Abstract: 2SD1895
Contextual Info: SavantIC Semiconductor Product Specification Silicon PNP Darlington Power Transistors 2SB1255 DESCRIPTION •With TO-3PFa package ·Optimum for 90W Hi-Fi output ·High foward current transfer ratio hFE ·Low collector-emitter saturation voltage ·Complement to type 2SD1895

2SB1255

Abstract: 2SD1895 NPN POWER DARLINGTON TRANSISTORS
Contextual Info: Product Specification www.jmnic.com Silicon NPN Darlington Power Transistors 2SD1895 DESCRIPTION ・With TO-3PFa package ・Optimum for 90W HiFi output ・High foward current transfer ratio hFE ・Low collector-emitter saturation voltage ・Complement to type 2SB1255

Contextual Info: Power Transistors 2SD1895 Silicon NPN triple diffusion planar type darlington Unit: mm For power amplification Complementary to 2SB1255 5.0±0.2 3.2 11.0±0.2 φ 3.2±0.1 15.0±0.2 (3.5) Solder Dip • Optimum for 60 W HiFi output • High forward current transfer ratio hFE

2SB1255

Abstract: 2SD1895 SC-92
Contextual Info: Power Transistors 2SB1255 Silicon PNP epitaxial planar type darlington Unit: mm For power amplification Complementary to 2SD1895 15.0±0.2 φ 3.2±0.1 2.0±0.2 2.0±0.1 0.6±0.2 1.1±0.1 5.45±0.3 • Absolute Maximum Ratings TC = 25°C 10.9±0.5 Parameter

2SB1255

Abstract: 2sd1895
Contextual Info: SavantIC Semiconductor Product Specification Silicon NPN Darlington Power Transistors 2SD1895 DESCRIPTION •With TO-3PFa package ·High DC current gain ·Low collector saturation voltage ·Complement to type 2SB1255 APPLICATIONS ·Power amplification ·Optimum for 90W high-fidelity

Contextual Info: Power T ransistors 2SB1255 2SB1255 Silicon PNP Epitaxial Planar Darlington Type Package Dim ensions Pow er Amplifier Com plem entary Pair with 2SD1895 • Features • Optimum for 90W hi-fi output • High DC c u rre n t gain hpE : 5000—30000 • Low collector-eim itter saturation voltage (Vcei. mi): < - 2 .5 V

2SB1255

Abstract: 2SD1895
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1895 Silicon NPN triple diffusion planar type darlington Unit: mm For power amplification Complementary to 2SB1255 5.0±0.2 (0.7) 15.0±0.3 (3.2) 15.0±0.2 φ 3.2±0.1 (3.5)

2SB1531

Abstract: 2SD2340 equivalent 2SB1255 2sb1492 2SD2328 2SA1185 2SB1421 2SC4535 2SD1457 2SD1457A
Contextual Info: Transistors Selection Guide by Applications and Functions • Silicon Large Power Transistors Application Functions Vceo (V) General-use lc VcE(sat) (A) (V) Darlington High-hfE Ib (mA) <0.8 (A) 7 TOP-3(a) (D64) 700 TOP-3F(a) (D67) 50 7 100 5 <2 3 300 140

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and