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    2SD2150 Price and Stock

    Micro Commercial Components 2SD2150-R-TP

    TRANS NPN 20V 3A SOT89
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    Micro Commercial Components 2SD2150-S-TP

    TRANS NPN 20V 3A SOT89
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    ROHM Semiconductor 2SD2150T100R

    TRANS NPN 20V 3A MPT3
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    Mouser Electronics 2SD2150T100R 438
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    Verical 2SD2150T100R 990 321
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    2SD2150T100R 179
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    ROHM Semiconductor 2SD2150T100S

    TRANS NPN 20V 3A MPT3
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    2SD2150T100S Reel 1,000
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    ROHM Semiconductor 2SD2150

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    Bristol Electronics 2SD2150 1,990
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    2SD2150 Datasheets (16)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SD2150 Jiangsu Changjiang Electronics Technology TRANSISTOR NPN) Original PDF
    2SD2150 Kexin Low Frequency Transistor Original PDF
    2SD2150 ROHM Low Frequency Transistor (20V, 3A) Original PDF
    2SD2150 TY Semiconductor Low Frequency Transistor - SOT-89 Original PDF
    2SD2150 Weitron NPN Epitaxial Planar Transistors Original PDF
    2SD2150 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SD2150 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SD2150 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SD2150 ROHM Transistor Selection Guide Scan PDF
    2SD2150R ROHM Low Frequency Transistor (20V, 3A) Original PDF
    2SD2150-R-TP Micro Commercial Components TRANSISTOR TO-92 MOD Original PDF
    2SD2150S ROHM Low Frequency Transistor (20V, 3A) Original PDF
    2SD2150-SOT-89 Jiangsu Changjiang Electronics Technology TRANSISTOR NPN) Original PDF
    2SD2150-S-TP Micro Commercial Components TRANSISTOR TO-92 MOD Original PDF
    2SD2150T100R ROHM Low Frequency Transistor (20 V, 3 A) Original PDF
    2SD2150T100S ROHM Low Frequency Transistor (20 V, 3 A) Original PDF

    2SD2150 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Transistors Low Frequency Transistor 20V, 3A 2SD2150 / 2SC4115S / 2SD2264 FFeatures 1) Low VCE(sat). VCE(sat) = 0.2V (Typ.) (IC / IB = 2A / 0.1A) 2) Excellent current gain characteristics. 3) Complements the 2SB1424 / 2SA1585S. FExternal dimensions (Units: mm)


    Original     		PDF 2SD2150 2SC4115S 2SD2264 2SB1424 2SA1585S. 96-237-C74)

    6551

    Abstract: 9848 2SD2150 300-24
    Text: SPICE PARAMETER 2SD2150 by ROHM TR Div. * 2SD2150 NPN BJT model * Date: 2006/12/14 .MODEL 2SD2150 NPN + IS=500.00E-15 + BF=300.24 + VAF=23.700 + IKF=13.956 + ISE=500.00E-15 + NE=1.6551 + BR=105.07 + VAR=100 + IKR=.75363 + ISC=1.9215E-9 + NC=2.1772 + NK=.97444


    Original     		PDF 2SD2150 Q2SD2150 00E-15 9215E-9 000E-3 704E-3 57E-12 136E-12 6551 9848 2SD2150 300-24

    Untitled

    Abstract: No abstract text available
    Text: 2SD2150Q Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)20 V(BR)CBO (V) I(C) Max. (A)3.0 Absolute Max. Power Diss. (W)2.0 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition)


    Original     		PDF 2SD2150Q

    Untitled

    Abstract: No abstract text available
    Text: ST 2SD2150U NPN Silicon Epitaxial Planar Transistor Low frequency transistor Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Collector Base Voltage VCBO 40 V Collector Emitter Voltage VCEO 20 V Emitter Base Voltage V VEBO 6 Collector Current - DC


    Original     		PDF 2SD2150U OT-89

    2SB1424

    Abstract: 2SD2150 T100
    Text: 2SD2150 Transistors Low Frequency Transistor 20V, 3A 2SD2150 zExternal dimensions (Unit : mm) zFeatures 1) Low VCE(sat). VCE(sat) = 0.2V(Typ.) （IC / IB = 2A / 0.1A） 2) Excellent current gain characteristics. 3) Complements the 2SB1424. 2SD2150 0.5±0.1


    Original     		PDF 2SD2150 2SB1424. SC-62 2SB1424 2SD2150 T100

    smd transistor marking cf

    Abstract: CF marking transistor smd cf smd marking CF 2SD2150 SOT-89 smd marking CF
    Text: Transistors SMD Type Low Frequency Transistor 2SD2150 SOT-89 Unit: mm 4.50 1.50 +0.1 -0.1 +0.1 -0.1 +0.1 1.80-0.1 +0.1 2.50-0.1 Low VCE sat . 1 2 3 +0.1 0.53-0.1 +0.1 0.48-0.1 +0.1 0.44-0.1 2.60 +0.1 -0.1 NPN silicon transistor. +0.1 0.80-0.1 Excellent DC current gain characteristics.


    Original     		PDF 2SD2150 OT-89 100MHz smd transistor marking cf CF marking transistor smd cf smd marking CF 2SD2150 SOT-89 smd marking CF

    2SD2150

    Abstract: No abstract text available
    Text: 2SD2150 NPN Epitaxial Planar Transistors SOT-89 P b Lead Pb -Free 1 1. BASE 2. COLLECTOR 3. EMITTER 2 3 ABSOLUTE MAXIMUM RATINGS (TA=25˚C) Symbol Limits Unit Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 20 V Emitter-Base Voltage VEBO 6


    Original     		PDF 2SD2150 OT-89 15-Aug-05 OT-89 500TYP 2SD2150

    Untitled

    Abstract: No abstract text available
    Text: Transistors Low VCE sat Transistor (*20V, *3A) 2SB1424 / 2SA1585S FFeatures 1) Low VCE(sat). VCE(sat) = *0.2V (Typ.) (IC / IB = *2A / *0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SD2150 / 2SC4115S. FExternal dimensions (Units: mm)


    Original     		PDF 2SB1424 2SA1585S 2SD2150 2SC4115S. 96-596-A74)

    sit transistor

    Abstract: transistor Ic 1A datasheet transistor sit 20V3A 2SD2150 2SA1585S 2SB1424 2SC4115S A-74
    Text: Transistors Low VCE sat Transistor (*20V, *3A) 2SB1424 / 2SA1585S FFeatures 1) Low VCE(sat). VCE(sat) = *0.2V (Typ.) (IC / IB = *2A / *0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SD2150 / 2SC4115S. FExternal dimensions (Units: mm)


    Original     		PDF 2SB1424 2SA1585S 2SD2150 2SC4115S. 96-596-A74) sit transistor transistor Ic 1A datasheet transistor sit 20V3A 2SA1585S 2SC4115S A-74

    E50U

    Abstract: c2a marking 2SD2150 sot89 "NPN TRANSISTOR" marking C2A
    Text: 2SD2150 NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free SOT-89 Features 4.4~4.6 1 1.4~1.8 2 1.4~1.6 3 3.94~4.25 1.BASE 2.COLLECTOR 2.3~2.6 * Excellent Current-to-Gain Characteristics


    Original     		PDF 2SD2150 OT-89 E50U c2a marking 2SD2150 sot89 "NPN TRANSISTOR" marking C2A

    Untitled

    Abstract: No abstract text available
    Text: 2SD2150 NPN Epitaxial Planar Transistors SOT-89 P b Lead Pb -Free 1 1. BASE 2. COLLECTOR 3. EMITTER 2 3 ABSOLUTE MAXIMUM RATINGS (TA=25˚C) Symbol Limits Unit Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 20 V Emitter-Base Voltage VEBO 6


    Original     		PDF 2SD2150 OT-89 15-Aug-05 OT-89 500TYP

    2SB1424

    Abstract: 2SD2150 T100
    Text: 2SD2150 Transistors Low Frequency Transistor 20V, 3A 2SD2150 zExternal dimensions (Unit : mm) zFeatures 1) Low VCE(sat). VCE(sat) =0.2V(Typ.) ̈́IC / IB = 2A / 0.1Aͅ 2) Excellent current gain characteristics. 3) Complements the 2SB1424. 2SD2150 0.5±0.1


    Original     		PDF 2SD2150 2SB1424. SC-62 2SB1424 2SD2150 T100

    245 transistor

    Abstract: ic 245 2SD2150 transistor Ic 1A datasheet NPN 2SA1585S 20V3A 2SC4115 equivalent transistor an 243 npn 2a NPN Silicon Epitaxial Planar Transistor
    Text: Transistors Low Frequency Transistor 20V, 3A 2SD2150 / 2SC4115S / 2SD2264 FFeatures 1) Low VCE(sat). VCE(sat) = 0.2V (Typ.) (IC / IB = 2A / 0.1A) 2) Excellent current gain characteristics. 3) Complements the 2SB1424 / 2SA1585S. FExternal dimensions (Units: mm)


    Original     		PDF 2SD2150 2SC4115S 2SD2264 2SB1424 2SA1585S. 96-237-C74) 245 transistor ic 245 transistor Ic 1A datasheet NPN 2SA1585S 20V3A 2SC4115 equivalent transistor an 243 npn 2a NPN Silicon Epitaxial Planar Transistor

    2SB1424

    Abstract: 2SD2150 T100
    Text: Low Frequency Transistor 20V, 3A 2SD2150 zDimensions(Unit : mm) zFeatures 1) Low VCE(sat). VCE(sat) = 0.2V(Typ.) （IC / IB = 2A / 0.1A） 2) Excellent current gain characteristics. 3) Complements the 2SB1424. 2SD2150 0.5±0.1 4.5+0.2 −0.1 4.0±0.3 2.5+0.2


    Original     		PDF 2SD2150 2SB1424. SC-62 R0039A 2SB1424 2SD2150 T100

    2SD2150

    Abstract: transistor marking 2a marking CFR
    Text: 2SD2150 3 A, 40 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-89 FEATURES 4 Excellent Current-to-Gain Characteristics Low Collector Saturation Voltage, VCE SAT =0.5V(Max.) for IC / IB=2A/0.1A


    Original     		PDF 2SD2150 OT-89 100mA -500mA, 100MHz 6-Nov-2009 2SD2150 transistor marking 2a marking CFR

    SOT-89

    Abstract: 2SD2150 marking CFR
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors 2SD2150 SOT-89 TRANSISTOR NPN 1. BASE FEATURES Power dissipation : 0.5 W Tamb=25 PCM Collector current ICM : 3 A Collector-base voltage V BR CBO : 40 V Operating and storage junction temperature range


    Original     		PDF OT-89 2SD2150 OT-89 100mA 100MHz SOT-89 2SD2150 marking CFR

    sot-89 PF

    Abstract: No abstract text available
    Text: 2SD2150 SOT-89 Transistor NPN 1. BASE 2. COLLECTOR SOT-89 3. EMITTER Features — 4.6 4.4 1.8 1.4 1.6 1.4 Excellent current-to-gain characteristics Low collector saturation voltage VCE(sat) VCE(sat)=0.5V(max) for IC/IB=2A/0.1A — B 2.6 4.25 2.4 3.75 0.8 MIN


    Original     		PDF 2SD2150 OT-89 OT-89 tp300S, 100mA 500mA 100MHz sot-89 PF

    Untitled

    Abstract: No abstract text available
    Text: Low Frequency Transistor 20V, 3A 2SD2150 zFeatures 1) Low VCE(sat). VCE(sat) = 0.2V(Typ.) （IC / IB = 2A / 0.1A） 2) Excellent current gain characteristics. 3) Complements the 2SB1424. zDimensions(Unit : mm) 2SD2150 0.5±0.1 4.5+0.2 −0.1 4.0±0.3 2.5+0.2


    Original     		PDF 2SD2150 2SB1424. SC-62 R0039A

    2SD2150

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 2SD2150 TRANSISTOR Plastic-Encapsulate Transistors SOT-89 NPN FEATURES z Excellent current-to-gain characteristics z Low collector saturation voltage VCE(sat) VCE(sat)=0.5V(max) for IC/IB=2A/0.1A


    Original     		PDF OT-89 2SD2150 100mA 500mA 100MHz tp300S, 2SD2150

    Untitled

    Abstract: No abstract text available
    Text: Transistors Low-frequency Transistor 20V, 3A 2SD2150/2SC4115S/2SD2264 •F e a tu re s 1 ) • E x t e r n a l d im e n s io n s (U nits: m m ) LOW V cE(sat). VcE(sat) = 0.2V (Typ.) (Ic / I 2) b = 2 A /0 .1 A ) E x c e lle n t c u rre n t g a in c h a ra c te ris ­


    OCR Scan     		PDF 2SD2150/2SC4115S/2SD2264 96-237-C74) 0Dlb713 O-220FN O-220FN O220FP T0-220FP, O-220FP. 7020c

    Untitled

    Abstract: No abstract text available
    Text: h ~7 > V 7 . $ /Transistors 2 S 2 D 1 5 2SD2150 1 * S yT J t f l s - i - B NPN y V 3 > Nÿ >y Epitaxial Planar NPN Silicon Transistor 1ì£^ J&^^iSi|Ìffl/Low Freq. Power Amp. 5 T -7 fi\r/D im e n s io n s Unit : mm) 1 ) VcE(sat) V c E (s a t)= 0 .5 V (M ax.)


    OCR Scan     		PDF 2SD2150 SC-62

    Untitled

    Abstract: No abstract text available
    Text: Transistors Low-frequency Transistor 20V, 3A 2SD2150/2SC4115S/2SD2264 •Features 1) •External dimensions (Units: mm) LOW VcE(sat). VcE(sai) = 0 . 2 V ( T y p .) ( I c / I b = 2A/Û.1A) 2) Excellent current gain characteris­ tics. 3) Complements the 2SB1424/2SA1585S.


    OCR Scan     		PDF 2SD2150/2SC4115S/2SD2264 2SB1424/2SA1585S. 96-237-C74) 2SD2150 2SC4115S 2SD2264 5mQ010

    sc-62 package

    Abstract: SOT-89 transistor marking LM 2SD2150
    Text: 2SD2150 Transistor, NPN Features • available in MPT3 MPT, SOT-89, SC-62 package • package marking: 2SD2150; C F*, where ★ is hFE code • excellent current-to-gain characteristics • low collector saturation voltage, typically VCE(sat) = 0.5 V (max) for


    OCR Scan     		PDF 2SD2150 OT-89, SC-62) 2SD2150; 2SD2150 sc-62 package SOT-89 transistor marking LM

    Untitled

    Abstract: No abstract text available
    Text: 2SD2150 Transistor, NPN Features Dimensions Units : mm • • • available in MPT3 (MPT, SOT-89, SC-62) package package marking: 2SD2150; CF^, where ★ is hFE code 2SD2150 (MPT3) +0.2 4 .5 - 0 .1 lf> 1.6 *0.1 I If excellent current-to-gain characteristics


    OCR Scan     		PDF 2SD2150 OT-89, SC-62) 2SD2150; 2SD2150