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Toshiba America Electronic Components 2SD2206,T6F(J TRANS NPN 100V 2A TO92MOD
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Toshiba America Electronic Components 2SD2206(TE6,F,M) TRANS NPN 100V 2A TO92MOD
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DigiKey	2SD2206(TE6,F,M)	Bulk				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Toshiba America Electronic Components 2SD2206A(T6SEP,F,M TRANS NPN 120V 2A TO92MOD
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DigiKey	2SD2206A(T6SEP,F,M	Bulk				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Toshiba America Electronic Components 2SD2206(T6CANO,F,M TRANS NPN 100V 2A TO92MOD
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DigiKey	2SD2206(T6CANO,F,M	Bulk				1 - 10 - 100 - 1000 - 10000 -	Buy Now

2SD2206 Datasheets (15)

Part	Manufacturer	Description	Datasheet Type	PDF
2SD2206	Toshiba	TRANS DARLINGTON NPN 100V 2A 3(2-5J1A)	Original	PDF
2SD2206	Toshiba	NPN Transistor	Original	PDF
2SD2206	Unknown	Japanese Transistor Cross References (2S)	Scan	PDF
2SD2206	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF
2SD2206	Unknown	Transistor Substitution Data Book 1993	Scan	PDF
2SD2206	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF
2SD2206	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
2SD2206	Toshiba	TRANSISTOR SILICON NPN EPITAXIAL TYPE (DARLINGTON)	Scan	PDF
2SD2206	Toshiba	Silicon NPN transistor for micro motor drive and hammer drive applications, switching and power amplifier applications	Scan	PDF
2SD2206,T6F(J	Toshiba Semiconductor and Storage	Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - TRANS NPN 2A 100V TO226-3	Original	PDF
2SD2206A	Toshiba	2SD2206A - Low-Frequency Power Transistors (2SB Series, 2SD Series); Surface Mount Type: N; Package: LSTM; Number Of Pins: 3; Viewing Angle: radial taping; Publication Class: Low-Frequency Power Transistor; Comments: Darlington	Original	PDF
2SD2206A(T6SEP,F,M	Toshiba Semiconductor and Storage	Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - TRANS NPN 2A 120V TO226-3	Original	PDF
2SD2206(T6CANO,F,M	Toshiba Semiconductor and Storage	Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - TRANS NPN 2A 100V TO226-3	Original	PDF
2SD2206(T6CNO,A,F)	Toshiba Semiconductor and Storage	Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - TRANS NPN 2A 100V TO226-3	Original	PDF

2SD2206(TE6,F,M)	Toshiba Semiconductor and Storage	Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - TRANS NPN 2A 100V TO226-3	Original	PDF

2SD2206 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
D2206 transistor Abstract: d2206 2sd2206 Text: 2SD2206 TOSHIBA Transistor Silicon NPN Epitaxial Type Darlington power transistor 2SD2206 Micro Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications Unit: mm • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)	Original	2SD2206 D2206 transistor d2206 2sd2206	PDF
D2206 transistor Abstract: D2206 2SD2206 Text: 2SD2206 TOSHIBA Transistor Silicon NPN Epitaxial Type Darlington Power Transistor 2SD2206 Micro Motor Drive, Hammer Drive Applications Switching Applications Unit: mm Power Amplifier Applications • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)	Original	2SD2206 D2206 transistor D2206 2SD2206	PDF
D2206 Abstract: D2206 transistor D2206 a 2SD2206 TO92-MOD Text: 2SD2206 TOSHIBA Transistor Silicon NPN Epitaxial Type Darlington Power Transistor 2SD2206 Micro Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications Unit: mm • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)	Original	2SD2206 D2206 D2206 transistor D2206 a 2SD2206 TO92-MOD	PDF
D2206 Abstract: D2206 transistor 2SD2206 Text: 2SD2206 TOSHIBA Transistor Silicon NPN Epitaxial Type Darlington power transistor 2SD2206 Micro Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications Unit: mm • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)	Original	2SD2206 D2206 D2206 transistor 2SD2206	PDF
D2206 transistor Abstract: D2206 2sd2206 D2206 a Text: 2SD2206 TOSHIBA Transistor Silicon NPN Epitaxial Type Darlington Power Transistor 2SD2206 Micro Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications Unit: mm • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)	Original	2SD2206 D2206 transistor D2206 2sd2206 D2206 a	PDF
Untitled Abstract: No abstract text available Text: 2SD2206 TOSHIBA Transistor Silicon NPN Epitaxial Type Darlington Power Transistor 2SD2206 Micro Motor Drive, Hammer Drive Applications Switching Applications Unit: mm Power Amplifier Applications • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)	Original	2SD2206	PDF
d2206 Abstract: D2206 a 2SD2206 Text: 2SD2206 シリコンNPNエピタキシャル形ダーリントン接続東芝トランジスタ 2SD2206 ○ マイクロモータドライブハンマドライブ用 ○ スイッチング用 ○ 電力増幅用 • 直流電流増幅率が高い。: hFE = 2000 (最小) (VCE = 2 V, IC = 1 A)	Original	2SD2206 O-92MOD d2206 D2206 a 2SD2206	PDF
D2206 Abstract: 2SD2206 Text: 2SD2206 シリコンNPNエピタキシャル形ダーリントン接続東芝トランジスタ 2SD2206 ○ マイクロモータドライブハンマドライブ用 ○ スイッチング用 ○ 電力増幅用 • 直流電流増幅率が高い。: hFE = 2000 (最小) (VCE = 2 V, IC = 1 A)	Original	2SD2206 O-92MOD 20070701-JA D2206 2SD2206	PDF
D2206 transistor Abstract: d2206 Text: 2SD2206 TOSHIBA Transistor Silicon NPN Epitaxial Type Darlington Power Transistor 2SD2206 Micro Motor Drive, Hammer Drive Applications Switching Applications Unit: mm Power Amplifier Applications • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)	Original	2SD2206 O-92MOD D2206 transistor d2206	PDF
GT30F131 Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01 Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs	Original	SCE0004L TTC4116* 2SC4118 TTA1586* 2SA1588 2SC4117 2SA1587 2SC5233 2SC4738 2SA1832 GT30F131 GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01	PDF
IGBT GT30F124 Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075 Text: 東芝半導体製品総覧表 2011 年 1 月版トランジスタバイポーラ小信号トランジスタ接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ高周波バイポーラ小信号トランジスタ	Original	SCJ0004R SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 IGBT GT30F124 IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075	PDF
2sC5200, 2SA1943 Abstract: 2SA1941 equivalent 2SC5353 equivalent 2sc5198 equivalent amplifier circuit using 2sa1943 and 2sc5200 2SC2383 equivalent tpcp8l01 2SA1962 equivalent 2SC4793 2sa1837 2sA1013 equivalent Text: 2011-4 PRODUCT GUIDE Power Transistors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g Power Transistors for Audio Power Amplifiers Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current	Original	BCE0016D 2sC5200, 2SA1943 2SA1941 equivalent 2SC5353 equivalent 2sc5198 equivalent amplifier circuit using 2sa1943 and 2sc5200 2SC2383 equivalent tpcp8l01 2SA1962 equivalent 2SC4793 2sa1837 2sA1013 equivalent	PDF
smd transistor h2a Abstract: SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A Text: 2008-9 PRODUCT GUIDE Power Transistors s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current efficiency. Package type can be selected to yield collector power output	Original	BCE0016C E-28831 BCE0016D smd transistor h2a SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A	PDF
GT30F124 Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123 Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs	Original	2010/9SCE0004K SC-43) 2SC1815 700the GT30F124 TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123	PDF

2SD2206 Abstract: No abstract text available Text: TO SH IBA 2SD2206 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE DARLINGTON 2SD2206 Unit in mm MICRO MOTOR DRIVE, HAMMER DRIVE APPLICATIONS 5.1 MAX. SWITCHING APPLICATIONS POWER AMPLIFIER APPLICATIONS • • High DC Current Gain : h^E = 2000 (Min.) (V'ce = 2V, Iq = 1A)	OCR Scan	2SD2206 75MAX. 2SD2206	PDF
Untitled Abstract: No abstract text available Text: 2SD2206 SILICON NPN EPITAXIAL TYPE DARLINGTON POWER MICRO MOTOR DRIVE, HAMMER DRIVE APPLICATIONS. SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATIONS. Unit in mm 5.1 M A X . High DC Current Gain : hFE= 200(Min. ) (Vce=2V, I c = 1A) . Low Saturation Voltage	OCR Scan	2SD2206 Ta-25	PDF
2SD2206 Abstract: No abstract text available Text: TO SHIBA 2SD2206 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE DARLINGTON 2SD2206 Unit in mm MICRO MOTOR DRIVE, HAMMER DRIVE APPLICATIONS. SWITCHING APPLICATIONS. 5.1M A X POWER AMPLIFIER APPLICATIONS. • • High DC Current Gain : hpE = 2000 (Min.) (Vç;e = 2V, I ç; = 1A)	OCR Scan	2SD2206 2SD2206	PDF
V10K300 Abstract: 2SD2206 Text: TO SH IBA 2SD2206 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE DARLINGTON 2SD2206 Unit in mm MICRO MOTOR DRIVE, HAMMER DRIVE APPLICATIONS. 5.1 MAX SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATIONS. • • High DC Current Gain : h^E = 2000 (Min.) (V'ce = 2V, Iq = 1A)	OCR Scan	2SD2206 V10K300 2SD2206	PDF
Untitled Abstract: No abstract text available Text: TO SHIBA 2SD2206 2SD2206 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE DARLINGTON MICRO MOTOR DRIVE, H A M M ER DRIVE APPLICATIONS. SWITCHING APPLICATIONS. PO W ER AM PLIFIER APPLICATIONS. High DC Current Gain : hFE = 2000 (Min.) (VCE = 2V, I q = 1A) Low Saturation Voltage	OCR Scan	2SD2206	PDF
2SD2449 Abstract: 2SD1509 2SD1410 2S01088 2SC982TM 2SD2088(F) 2sd799 Text: Darlington Transistors F1 W c E O 30V 50V 60V 80V 100V 160V 250V 300V 400V 450V 2SC982TM 0.3A 1.SA 40V 2SD1140 2SD1224 2SD1508 2SD1631 2SD2481 2SB1067 2SD1658 2A 2SD1509 2SD2088 2SD2208 2SB1411 2SD2206 2SB1457 2SB1617 2SD2480 2SB677 2SD687 3A 4A SA 2SD2129	OCR Scan	2SC982TM 2SD1140 2SD1224 2SD1508 2SD1631 2SD2481 2SB677 2SD687 2SB907 2SD1222 2SD2449 2SD1509 2SD1410 2S01088 2SC982TM 2SD2088(F) 2sd799	PDF
2sd2206 Abstract: No abstract text available Text: T O SH IB A 2SD2206 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE DARLINGTON 2SD2206 Unit in mm MICRO MOTOR DRIVE, HAMMER DRIVE APPLICATIONS. 5.1 M AX SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATIONS. High DC Current Gain : hFE = 2000 (Min.) (VCE = 2V, 1q = 1A)	OCR Scan	2SD2206 75MAX 2sd2206	PDF
15J102 Abstract: Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 02SC5030 T15J103 Driver IC 2SC3346 Text: L -S T M T 0 -9 2 M 0 D T Y P E POWER TRANSISTOR V ’CEO \(V> 10 30 40 50 60 80 100 120 180 2SA949U50VI 2AC2229(150V) 0.05 200 250 2SA1321 2SC3334 300 2SC5122I400V) 2SA1145U50V) 2SC2705(!50V) 2SC2230(160V) 0.1 2SC2482 2SC2230A 2SA817A 0.4 2SC1627A 2SA1811	OCR Scan	2SA949U50VI 2AC2229 2SA1145U50V) 2SC2705( 2SC2230 2SA817A 2SC1627A 2SA1811 2SC4707 2SA965 15J102 Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 02SC5030 T15J103 Driver IC 2SC3346	PDF
2sC5200, 2SA1943, 2sc5198 Abstract: GTI5Q101 2sc5039 2SC4532 2SD2088 2SC3303 2sC5200, 2SA1943 2SA1803 2sc4408 GT10G102 Text: • ALPHNUMERICAL INDEX Type No. Page Type No. Page Type No. Page 2SA817A 121 2SA1387 202 2SA1892 278 2SA940 123 2SA1388 206 2SA1893 280 2SA949 125 2SA1408 209 2SA1899 281 2SA965 127 2SA1425 212 2SA1905 282 2SA966 129 2SA1426 214 2SA1923 284 2SA1012 131 2SA1428	OCR Scan	2SA817A 2SA940 2SA949 2SA965 2SA966 2SA1012 2SA1013 2SA1020 2SA1145 2SA1160 2sC5200, 2SA1943, 2sc5198 GTI5Q101 2sc5039 2SC4532 2SD2088 2SC3303 2sC5200, 2SA1943 2SA1803 2sc4408 GT10G102	PDF
2SC144 Abstract: 2SD466 2sc5266 Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l\|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *	OCR Scan	T258-OMI FAX06 2SC144 2SD466 2sc5266	PDF

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2SD2206 Search Results

2SD2206 Price and Stock

Toshiba America Electronic Components 2SD2206,T6F(J

Toshiba America Electronic Components 2SD2206(TE6,F,M)

Toshiba America Electronic Components 2SD2206A(T6SEP,F,M

Toshiba America Electronic Components 2SD2206(T6CANO,F,M

2SD2206 Datasheets (15)

2SD2206 Datasheets Context Search

D2206 transistor

D2206 transistor

D2206

D2206

D2206 transistor

Untitled

d2206

D2206

D2206 transistor

GT30F131

IGBT GT30F124

2sC5200, 2SA1943

smd transistor h2a

GT30F124

2SD2206

Untitled

2SD2206

V10K300

Untitled

2SD2449

2sd2206

15J102

2sC5200, 2SA1943, 2sc5198

2SC144