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    Panasonic Electronic Components 2SD2216J0L

    TRANS NPN 50V 0.1A SSMINI3
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    2SD2216J0L Digi-Reel 1
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    Bristol Electronics 2SD2216J0L 2,551
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    Panasonic Electronic Components 2SD2216J-R(TX)

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    Win Source Electronics 2SD2216J-R(TX) 13,605
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    2SD2216J Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SD2216J Panasonic NPN Transistor Original PDF
    2SD2216J Panasonic Silicon NPN epitaxial planar type Original PDF
    2SD2216J0L Panasonic TRANS NPN LF 50VCEO .1A SS-MINI Original PDF
    2SD2216J0L Panasonic Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS NPN LF 50VCEO .1A SS-MINI Original PDF
    2SD2216JY Panasonic Silicon NPN Epitaxial Planar Type Transistor Original PDF

    2SD2216J Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Transistor 2SD2216J Silicon NPN epitaxial planer type For general amplification Complementary to 2SB1462J Unit: mm 1.60±0.05 0.80 0.80±0.05 0.425 0.425 0.50 0.27±0.02 0.50 +0.05 1.00±0.05 ● High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE sat .


    Original     		PDF 2SD2216J 2SB1462J

    2SB1462J

    Abstract: 2SD2216J SC-89
    Text: Transistors 2SD2216J Silicon NPN epitaxial planar type 1.60+0.05 –0.03 1.00±0.05 Unit: mm 0.80±0.05 For general amplification Complementary to 2SB1462J 0.12+0.03 –0.01 0.375 2 0 to 0.02 (0.50)(0.50) (0.80) 1 0.27±0.02 5˚ 0.70+0.05 –0.03 • High forward current transfer ratio hFE


    Original     		PDF 2SD2216J 2SB1462J 2SB1462J 2SD2216J SC-89

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2216J Silicon NPN epitaxial planar type 1.60+0.05 –0.03 1.00±0.05 Unit: mm 0.80±0.05 For general amplification Complementary to 2SB1462J 0.12+0.03 –0.01 (0.375) 2 0 to 0.02


    Original     		PDF 2002/95/EC) 2SD2216J 2SB1462J

    2SB1462J

    Abstract: 2SD2216J
    Text: Transistor 2SB1462J Silicon PNP epitaxial planer type For general amplification Complementary to 2SD2216J Unit: mm 1.60±0.05 0.80 0.80±0.05 0.425 0.425 VCBO –60 V VCEO –50 V Emitter to base voltage VEBO –7 V Peak collector current ICP –200 mA Collector current


    Original     		PDF 2SB1462J 2SD2216J 2SB1462J 2SD2216J

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2216J Silicon NPN epitaxial planar type M Di ain sc te on na tin nc ue e/ d For general amplification Complementary to 2SB1462J • Package • High forward current transfer ratio hFE


    Original     		PDF 2002/95/EC) 2SD2216J 2SB1462J

    2SB1462J

    Abstract: 2SD2216J
    Text: Transistor 2SD2216J Silicon NPN epitaxial planer type For general amplification Complementary to 2SB1462J Unit: mm 1.60±0.05 0.80 0.80±0.05 0.425 0.425 0.50 0.27±0.02 0.50 +0.05 1.00±0.05 ● High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE sat .


    Original     		PDF 2SD2216J 2SB1462J 2SB1462J 2SD2216J

    IC4800

    Abstract: 2SB1462J 2SD2216J
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2216J Silicon NPN epitaxial planar type M Di ain sc te on na tin nc ue e/ d For general amplification Complementary to 2SB1462J • Features ue pl d in an c se ed lud pl vi an m m es


    Original     		PDF 2002/95/EC) 2SD2216J 2SB1462J IC4800 2SB1462J 2SD2216J

    2SB1462J

    Abstract: 2SD2216J SC-89
    Text: Transistor 2SD2216J Silicon NPN epitaxial planar type 1.60+0.05 –0.03 1.00±0.05 0.80±0.05 Unit: mm For general amplification Complementary to 2SB1462J 0.12+0.03 –0.01 5˚ Symbol Rating Unit VCBO 60 V Collector to emitter voltage VCEO 50 V Emitter to base voltage


    Original     		PDF 2SD2216J 2SB1462J 2SB1462J 2SD2216J SC-89

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1462J Silicon PNP epitaxial planar type For general amplification Complementary to 2SD2216J 1.00±0.05 Unit: mm 0.80±0.05 1.60+0.05 –0.03 0.12+0.03 –0.01 • High forward current transfer ratio hFE


    Original     		PDF 2002/95/EC) 2SB1462J 2SD2216J

    2SB1462J

    Abstract: 2SD2216J SC-89
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1462J Silicon PNP epitaxial planar type For general amplification Complementary to 2SD2216J 1.00±0.05 0.12+0.03 –0.01 (0.375) 1.60±0.05 5˚ 2 • High forward current transfer ratio hFE


    Original     		PDF 2002/95/EC) 2SB1462J 2SD2216J 2SB1462J 2SD2216J SC-89

    2SB1462J

    Abstract: 2SD2216J
    Text: Transistor 2SB1462J Silicon PNP epitaxial planer type For general amplification Complementary to 2SD2216J 1.60+0.05 –0.03 1.00±0.05 • Features 1 Ratings Unit Collector to base voltage VCBO –60 V Collector to emitter voltage VCEO –50 V Emitter to base voltage


    Original     		PDF 2SB1462J 2SD2216J 2SB1462J 2SD2216J

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2216J Silicon NPN epitaxial planar type 1.60+0.05 –0.03 1.00±0.05 Unit: mm 0.80±0.05 For general amplification Complementary to 2SB1462J 0.12+0.03 –0.01 (0.375) 2 0 to 0.02


    Original     		PDF 2002/95/EC) 2SD2216J 2SB1462J

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1462J Silicon PNP epitaxial planar type For general amplification Complementary to 2SD2216J 1.00±0.05 Unit: mm 0.80±0.05 1.60+0.05 –0.03 0.12+0.03 –0.01 • High forward current transfer ratio hFE


    Original     		PDF 2002/95/EC) 2SB1462J 2SD2216J

    2SB1462J

    Abstract: 2SD2216J SC-89
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1462J Silicon PNP epitaxial planar type For general amplification Complementary to 2SD2216J 1.00±0.05 0.12+0.03 –0.01 (0.375) 1.60±0.05 5˚ 2 • High forward current transfer ratio hFE


    Original     		PDF 2002/95/EC) 2SB1462J 2SD2216J 2SB1462J 2SD2216J SC-89

    2SB1462J

    Abstract: 2SD2216J SC-89
    Text: Transistors 2SB1462J Silicon PNP epitaxial planar type For general amplification Complementary to 2SD2216J 1.00±0.05 Unit: mm 0.80±0.05 1.60+0.05 –0.03 0.12+0.03 –0.01 • High forward current transfer ratio hFE • SS-Mini type package, allowing downsizing of the equipment and


    Original     		PDF 2SB1462J 2SD2216J 2SB1462J 2SD2216J SC-89

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1462J Silicon PNP epitaxial planar type For general amplification Complementary to 2SD2216J 1.00±0.05 Unit: mm 0.80±0.05 1.60+0.05 –0.03 0.12+0.03 –0.01 1 • High forward current transfer ratio hFE


    Original     		PDF 2002/95/EC) 2SB1462J 2SD2216J

    MIP2F3

    Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
    Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the


    Original     		PDF PAMP13-N1 MIP2F3 MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent

    2sc5929

    Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
    Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original     		PDF responsibiliXP08081 XP08546 XP0A554 XP0D873 XP0D874 XP0D875 XP0E554 2sc5929 MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE

    UP04598G

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP04598G Silicon NPN epitaxial planar type For high frequency amplification (Tr1) For low frequency amplification (Tr2) • Features  Package  Two elements incorporated into one package (Each transistor is separated)


    Original     		PDF 2002/95/EC) UP04598G 2SC2404 2SD2216J UP04598G

    lcd control board schematic

    Abstract: R8025 IC8001 c8015 C8014 C8013 R8025 ac AN2540FHQ-V schematic diagram ac voltage regulator schematic diagram ac regulator
    Text: NOTE: FOR SCHEMATIC DIAGRAM AND CIRCUIT BOARD LAYOUT NOTES, REFER TO BEGINNING OF SCHEMATIC SECTION. NOTE: PARTS MARKED "PT" ARE NOT USED. NOTE: For placing a purchase order of the parts, be sure to use the part number listed in the parts list. Do not use the part number on this diagram.


    Original     		PDF Q8008 2SB1462J08 L8004 D8007 D8008 R8021 L8001 Q8004 R8004 lcd control board schematic R8025 IC8001 c8015 C8014 C8013 R8025 ac AN2540FHQ-V schematic diagram ac voltage regulator schematic diagram ac regulator

    C3507 transistor

    Abstract: C3507 C3502 C3518 c3506 C4804 Q1009 transistor C3552 IC1002 c3552
    Text: PV-GS2P / PV-GS9P / PV-GS12P / PV-GS14P / PV-GS15P / PV-GS9PC / PV-GS13PC / PV-GS15PC NOTE: For placing a purchase order of the parts, be sure to use the part number listed in the parts list. Do not use the part number on this diagram. MAIN IX SCHEMATIC DIAGRAM


    Original     		PDF PV-GS12P PV-GS14P PV-GS15P PV-GS13PC PV-GS15PC Q3506 UNR9214 C3551 L3506 L3507 C3507 transistor C3507 C3502 C3518 c3506 C4804 Q1009 transistor C3552 IC1002 c3552

    2SA1586Y

    Abstract: tX-2 27MHz MA159A-TX 2.2-20V matrix CCD 2SA1586YG conditioning circuits for window TV on/off sensor MB88347 si 1125 hd video signal circuit diagram tv sony
    Text: MCX18N00A/MCX18N00B Micro Unit CCD Description The micro unit CCD is a CCD color camera unit with built-in CCD image sensor, drive system IC, sample-and-hold IC, signal processor IC and lens system. 64 pin QFN Ceramic Features • Ultra-compact size: MCX18N00A


    Original     		PDF MCX18N00A/MCX18N00B MCX18N00A MCX18N00B 000-pixel MB88347 AK6420 AVDD64-R 50max 2SA1586Y tX-2 27MHz MA159A-TX 2.2-20V matrix CCD 2SA1586YG conditioning circuits for window TV on/off sensor MB88347 si 1125 hd video signal circuit diagram tv sony

    2SC5936

    Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
    Text: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original     		PDF XP06501T XP06531 XP06545 XP0A554 XP0D873 XP0D874 XP0D875 2SC5936 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928

    2SC144

    Abstract: 2SD466 2sc5266
    Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *


    OCR Scan     		PDF T258-OMI FAX06 2SC144 2SD466 2sc5266