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    2SD2413 Search Results

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    2SD2413 Price and Stock

    Panasonic Electronic Components 2SD241300L

    TRANS NPN 400V 0.1A MINIP3-F1
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    2SD241300L Digi-Reel 1
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    2SD241300L Cut Tape
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    Panasonic Electronic Components 2SD2413G0L

    TRANS NPN 400V 0.1A MINIP3-F2
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    Panasonic Electronic Components 2SD2413-(TX)

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    Bristol Electronics 2SD2413-(TX) 3,000 7
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    Quest Components 2SD2413-(TX) 184,870
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    2SD2413-(TX) 184,870
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    2SD2413-(TX) 2,400
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    2SD2413-(TX) 2,400
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    2SD2413 Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SD2413 Panasonic NPN Transistor Original PDF
    2SD2413 Panasonic Silicon NPN triple diffusion planer type Original PDF
    2SD2413 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SD2413 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SD241300L Panasonic Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS NPN 400VCEO .1A MINI PWR Original PDF
    2SD24131S Panasonic Silicon NPN Triple Diffusion Planar Type Transistor Original PDF
    2SD2413G0L Panasonic Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS NPN 400VCEO 100MA MINIP-3 Original PDF

    2SD2413 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors 2SD2413 SOT-89-3L TRANSISTOR NPN 1. BASE FEATURES z High collector to base voltage VCBO z High collector to emitter voltage VCEO z Large collector power dissipation PC


    Original
    OT-89-3L 2SD2413 OT-89-3L 200MHz PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2413G Silicon NPN triple diffusion planar type For low-frequency output amplification • Package ■ Features • High collector-base voltage (Emitter open) VCBO • High collector-emitter voltage (Base open) VCEO


    Original
    2002/95/EC) 2SD2413G PDF

    2SD2413

    Abstract: No abstract text available
    Text: Transistor 2SD2413 Silicon NPN triple diffusion planer type For low-frequency output amplification Unit: mm ● ● 0.5±0.08 1.5±0.1 * Ta=25˚C Symbol Ratings Unit Collector to base voltage VCBO 400 V Collector to emitter voltage VCEO 400 V Emitter to base voltage


    Original
    2SD2413 2SD2413 PDF

    2SD2413G

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2413G Silicon NPN triple diffusion planar type For low-frequency output amplification • Package ■ Features • Code MiniP3-F2 • Pin Name 1: Base 2: Collector 3: Emitter Th an


    Original
    2002/95/EC) 2SD2413G 2SD2413G PDF

    Untitled

    Abstract: No abstract text available
    Text: Transistors 2SD2413 Silicon NPN triple diffusion planar type For low-frequency output amplification Unit: mm 4.5±0.1 1.6±0.2 ● 3 2 0.5±0.08 1 0.4±0.08 1.5±0.1 2.5±0.1 0.4±0.04 3° 0.4 max. ● 3° ● High collector to base voltage VCBO. High collector to emitter voltage VCEO.


    Original
    2SD2413 PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2413 Silicon NPN triple diffusion planar type For low-frequency output amplification Unit: mm 4.5±0.1 1.6±0.2 3 2 0.5±0.08 1.5±0.1 1.0+0.1 –0.2 1 0.4±0.08 3˚ 4.0+0.25 –0.20


    Original
    2002/95/EC) 2SD2413 PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2413G Silicon NPN triple diffusion planar type For low-frequency output amplification • Package M Di ain sc te on na tin nc ue e/ d ■ Features ■ Marking Symbol: 1S ■ Absolute Maximum Ratings Ta = 25°C


    Original
    2002/95/EC) 2SD2413G PDF

    2SD2413

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors 2SD2413 SOT-89 TRANSISTOR NPN 1. BASE FEATURES z High collector to base voltage VCBO z High collector to emitter voltage VCEO z Large collector power dissipation PC


    Original
    OT-89 2SD2413 OT-89 200MHz 2SD2413 PDF

    2SD2413

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2413 Silicon NPN triple diffusion planar type For low-frequency output amplification Unit: mm 4.5±0.1 1.6±0.2 • Features 1.5±0.1 Unit Collector-base voltage (Emitter open) VCBO


    Original
    2002/95/EC) 2SD2413 2SD2413 PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2413 Silicon NPN triple diffusion planar type For low-frequency output amplification Unit: mm 4.5±0.1 1.6±0.2 3 2 0.5±0.08 1.5±0.1 1.0+0.1 –0.2 1 0.4±0.08 3˚ 4.0+0.25 –0.20


    Original
    2002/95/EC) 2SD2413 PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2413 Silicon NPN triple diffusion planar type For low-frequency output amplification Unit: mm 4.5±0.1 1.6±0.2 1.5±0.1 Unit Collector-base voltage (Emitter open) VCBO 400 V Collector-emitter voltage (Base open)


    Original
    2002/95/EC) 2SD2413 PDF

    2SD2413G

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2413G Silicon NPN triple diffusion planar type M Di ain sc te on na tin nc ue e/ d For low-frequency output amplification • Package ■ Features ■ Marking Symbol: 1S ■ Absolute Maximum Ratings Ta = 25°C


    Original
    2002/95/EC) 2SD2413G 2SD2413G PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2413 Silicon NPN triple diffusion planar type For low-frequency output amplification Unit: mm 4.5±0.1 1.6±0.2 Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 400


    Original
    2002/95/EC) 2SD2413 PDF

    2SD2413

    Abstract: No abstract text available
    Text: Transistor 2SD2413 Silicon NPN triple diffusion planer type For low-frequency output amplification Unit: mm ● ● 0.5±0.08 1.5±0.1 * Ta=25˚C Symbol Ratings Unit Collector to base voltage VCBO 400 V Collector to emitter voltage VCEO 400 V Emitter to base voltage


    Original
    2SD2413 2SD2413 PDF

    marking 1s

    Abstract: 1s SOT-89
    Text: 2SD2413 SOT-89 Transistor NPN 1. BASE SOT-89 2. COLLECTOR 1 2 3. EMITTER 3 4.6 4.4 1.8 1.4 1.6 1.4 B Features — — — — 2.6 4.25 2.4 3.75 High collector to base voltage VCBO High collector to emitter voltage VCEO Large collector power dissipation PC Low collector to emitter saturation voltage VCE(sat)


    Original
    2SD2413 OT-89 OT-89 200MHz marking 1s 1s SOT-89 PDF

    2SD2413

    Abstract: 2SD24
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2413 Silicon NPN triple diffusion planar type For low-frequency output amplification Unit: mm 4.5±0.1 1.5±0.1 Collector-base voltage (Emitter open) Collector-emitter voltage (Base open)


    Original
    2002/95/EC) 2SD2413 2SD2413 2SD24 PDF

    MIP2F3

    Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
    Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the


    Original
    PAMP13-N1 MIP2F3 MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent PDF

    ma3df25

    Abstract: 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01
    Text: 2009 Discrete Semiconductors New Products Line-up Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original
    respons39 O-220D-A1 MA26P02 MAZ3082J 2SC5779 MA26P07 MAZ3091 2SC5829 MA27E020G ma3df25 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01 PDF

    2sc5929

    Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
    Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original
    responsibiliXP08081 XP08546 XP0A554 XP0D873 XP0D874 XP0D875 XP0E554 2sc5929 MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE PDF

    secos gmbh

    Abstract: c945 p 331 transistor npn SM2150AM SM1150AM c945 p 331 transistor SMBJ11CA 2sd2142 SM4005A SSG8 pzt649
    Text: Table of Contents Diodes Rectifier Schottky Rectifier 》Low VF Schottky Rectifier C1 - C5 Fast Rectifier D1 - D3 Low Loss Super Fast Bridge E1 - E3 F1 High Efficiency G1 - G4 Schottky H1 - H3 Switching I1- I3 PiN Diode J1 Bridge Rectifier 》 Fast Bridge Rectifiers


    Original
    SGSR809-A SC-59 SGSR809-B SGSR809-C SGSR809-D SGSR809-E secos gmbh c945 p 331 transistor npn SM2150AM SM1150AM c945 p 331 transistor SMBJ11CA 2sd2142 SM4005A SSG8 pzt649 PDF

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original
    P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS PDF

    secos gmbh

    Abstract: SMBJ11CA SM4005A SMBJ130CA SMBJ14CA SMBJ16CA SMBJ160CA BZV55C6V2 BZV55C12 SMBJ13CA
    Text: Table of Contents Diodes Rectifier Schottky Rectifier 》Low VF Schottky Rectifier Small Signal Bridge B1 - B2 General Rectifier C1 - C4 Fast Rectifier D1 - D3 》Super Fast Low Loss Super Fast E1 - E3 High Efficiency G1 - G3 Schottky H1 - H3 Switching I1- I3


    Original
    SC-59 SGSR809-A SGSR809-B SGSR809-C SGSR809-D SGSR809-E secos gmbh SMBJ11CA SM4005A SMBJ130CA SMBJ14CA SMBJ16CA SMBJ160CA BZV55C6V2 BZV55C12 SMBJ13CA PDF

    D2375

    Abstract: D1259A d1267a D1265A transistor 2SA1949 2sd2328a TRANSISTORS SELECTION GUIDE D1261A C3795 2SB1526
    Text: Transistors Selection Guide by Packages • SS-Mini Type, SS-Mini Flat-Lead Packages (D1) c e o (V) lc ( m A ) \ \ V 15 10 (* 6V) 20 *A 2SC 5363 30 80 40 2SA1806 2SC4809 2SC5295 (65mA) 2SC4808 2SD2345 150 f 2SA1791 ! 2SC4656 185 I 2SB1463 I 2SD2240 2SD2240A


    OCR Scan
    125mW 2SC4627 2SC5021 2SA1790 2SC4626 2SC4655 2SC4809 2SC5295 2SC4808 2SA1806 D2375 D1259A d1267a D1265A transistor 2SA1949 2sd2328a TRANSISTORS SELECTION GUIDE D1261A C3795 2SB1526 PDF

    2SC144

    Abstract: 2SD466 2sc5266
    Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *


    OCR Scan
    T258-OMI FAX06 2SC144 2SD466 2sc5266 PDF