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    2SJ0672 Search Results

    2SJ0672 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SJ0672 Panasonic TRANS MOSFET P-CH 30V 0.1A 3SSSMINI3-F1 Original PDF

    2SJ0672 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SJ0672

    Abstract: 2SK3539 UP04979
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP04979 Silicon N-channel MOSFET (Tr1) Silicon P-channel MOSFET (Tr2) 0.20+0.05 –0.02 (0.30) 4 1.20±0.05 For switching Display at No.1 lead • 2SJ0672 + 2SK3539 Parameter


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    PDF 2002/95/EC) UP04979 2SJ0672 2SK3539 OD-723 -20lues, 2SJ0672 2SK3539 UP04979

    ON4030

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP04979 Silicon N-channel MOSFET (Tr1) Silicon P-channel MOSFET (Tr2) 0.20+0.05 –0.02 (0.30) 4 1.20±0.05 For switching Display at No.1 lead • 2SJ0672 + 2SK3539 Parameter


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    PDF 2002/95/EC) UP04979 2SJ0672 2SK3539 ON4030

    Untitled

    Abstract: No abstract text available
    Text: Silicon MOSFETs Small Signal 2SJ0672 Silicon P-channel MOSFET Unit: mm For switching circuits 0.10+0.05 –0.02 0.33+0.05 –0.02 5˚ 0.15 min. 2 (0.40) (0.40) 0.80±0.05 1.20±0.05 • Absolute Maximum Ratings Ta = 25°C Rating Unit VDS −30 V Gate-source voltage (Drain open)


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    PDF 2SJ0672

    2SJ0672

    Abstract: 2SK3539 UP04979
    Text: Composite Transistors UP04979 Silicon N-channel MOSFET Tr1 Silicon P-channel MOSFET (Tr2) 0.20+0.05 –0.02 (0.30) 4 1.20±0.05 For switching Display at No.1 lead • 2SJ0672 + 2SK3539 Parameter Tr1 Symbol Rating Unit VDSS 50 V Marking Symbol: 4T Gate-source voltage


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    PDF UP04979 2SJ0672 2SK3539 OD-723 2SJ0672 2SK3539 UP04979

    2SJ0672

    Abstract: ON5040
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon MOSFETs (Small Signal) 2SJ0672 Silicon P-channel MOSFET Unit: mm For switching circuits 0.33+0.05 –0.02 0.10+0.05 –0.02 Peak drain current Drain power dissipation Channel temperature


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    PDF 2002/95/EC) 2SJ0672 2SJ0672 ON5040

    2SJ0672

    Abstract: 2SK3539 UP04979
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP04979 Silicon N-channel MOSFET (Tr1) Silicon P-channel MOSFET (Tr2) 0.20+0.05 –0.02 (0.30) 4 M Di ain sc te on na tin nc ue e/ d 1.20±0.05 For switching • 2SJ0672 + 2SK3539


    Original
    PDF 2002/95/EC) UP04979 2SJ0672 2SK3539 OD-723 2SJ0672 2SK3539 UP04979

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP04979 Silicon N-channel MOSFET (Tr1) Silicon P-channel MOSFET (Tr2) 0.20+0.05 –0.02 (0.30) 4 • Features 1 • 2SJ0672 + 2SK3539 ■ Absolute Maximum Ratings Ta = 25°C


    Original
    PDF 2002/95/EC) UP04979 2SJ0672 2SK3539 OD-723

    2SJ0672

    Abstract: No abstract text available
    Text: Silicon MOSFETs Small Signal 2SJ0672 Silicon P-channel MOSFET Unit: mm For switching circuits 0.10+0.05 –0.02 0.33+0.05 –0.02 5˚ 0.15 min. 2 (0.40) (0.40) 0.80±0.05 1.20±0.05 • Absolute Maximum Ratings Ta = 25°C Rating Unit VDS −30 V Gate-source voltage (Drain open)


    Original
    PDF 2SJ0672 2SJ0672

    2SJ0672

    Abstract: 2SK3539 UP04979
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP04979 Silicon N-channel MOSFET (Tr1) Silicon P-channel MOSFET (Tr2) 0.20+0.05 –0.02 (0.30) 4 M Di ain sc te on na tin nc ue e/ d 1.20±0.05 For switching • 2SJ0672 + 2SK3539


    Original
    PDF 2002/95/EC) UP04979 2SJ0672 2SK3539 OD-723 2SJ0672 2SK3539 UP04979

    Untitled

    Abstract: No abstract text available
    Text: Silicon MOSFETs Small Signal 2SJ0672 Silicon P-channel MOSFET Unit: mm For switching circuits 0.33+0.05 –0.02 0.10+0.05 –0.02 1.20±0.05 0.80±0.05 5˚ M Di ain sc te on na tin nc ue e/ d • Ultra small package switching MOSFETs • SSS-Mini type package, allowing downsizing of the equipment and


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    PDF 2SJ0672

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon MOSFETs (Small Signal) 2SJ0672 Silicon P-channel MOSFET Unit: mm For switching circuits 0.33+0.05 –0.02 0.10+0.05 –0.02 V Gate-source voltage (Drain open) VGSO Peak drain current IDP


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    PDF 2002/95/EC) 2SJ0672

    MIP2F3

    Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
    Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the


    Original
    PDF PAMP13-N1 MIP2F3 MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent

    2sc5929

    Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
    Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


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    PDF responsibiliXP08081 XP08546 XP0A554 XP0D873 XP0D874 XP0D875 XP0E554 2sc5929 MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE

    MS701

    Abstract: 2SJ0672 2SK3539G UP04979
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP04979G Silicon N-channel MOSFET (Tr1) Silicon P-channel MOSFET (Tr2) For switching • Package  High-speed switching  Incorporating a built-in gate protection-diode


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    PDF 2002/95/EC) UP04979G 2SJ0672 2SK3539G MS701 2SJ0672 2SK3539G UP04979

    2SJ0672

    Abstract: 2SK3539G
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP04979G Silicon N-channel MOSFET (Tr1) Silicon P-channel MOSFET (Tr2) For switching • Package  High-speed switching  Incorporating a built-in gate protection-diode


    Original
    PDF 2002/95/EC) UP04979G 2SJ0672 2SK3539G

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP04979G Silicon N-channel MOSFET (Tr1) Silicon P-channel MOSFET (Tr2) For switching • Features  Package  High-speed switching  Incorporating a built-in gate protection-diode


    Original
    PDF 2002/95/EC) UP04979G 2SJ0672 2SK3539G

    2SJ0672

    Abstract: 2SK3539G
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP04979G Silicon N-channel MOSFET (Tr1) Silicon P-channel MOSFET (Tr2) For switching • Package  High-speed switching  Incorporating a built-in gate protection-diode


    Original
    PDF 2002/95/EC) UP04979G 2SJ0672 2SK3539G

    mip411

    Abstract: MIP2F4 MIP2F3 AN12947a mip2f2 MIP2F20MS MIP2F40MS mip2e7dmy panasonic inverter dv 700 manual mip291
    Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the


    Original
    PDF PAMP13-N1 mip411 MIP2F4 MIP2F3 AN12947a mip2f2 MIP2F20MS MIP2F40MS mip2e7dmy panasonic inverter dv 700 manual mip291

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP04979G Silicon N-channel MOSFET (Tr1) Silicon P-channel MOSFET (Tr2) For switching • Package  High-speed switching  Incorporating a built-in gate protection-diode


    Original
    PDF 2002/95/EC) UP04979G 2SJ0672 2SK3539G