2SJ16 Search Results

2SJ16 Result Highlights (5)

Part	Manufacturer	Description
2SJ162-E	Renesas Electronics Corporation	Silicin P Channel Mosfet
2SJ166-T1B-A	Renesas Electronics Corporation	Power MOSFETs for Automotive, MM, /
2SJ166-T2B-A	Renesas Electronics Corporation	Power MOSFETs for Automotive
2SJ160-E	Renesas Electronics Corporation	Silicin P Channel Mosfet
2SJ165-T-A	Renesas Electronics Corporation	P-Channel Mosfet For Switching

2SJ16 Price and Stock

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Toshiba America Electronic Components 2SJ168TE85LF MOSFET P-CH 60V 200MA SC59
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2SJ168TE85LF	Cut Tape	12,610		1	1 $1.25 10 $0.785 100 $1.25 1000 $0.36663 10000 $0.36663	Buy Now
	2SJ168TE85LF	Digi-Reel	12,610		1	1 $1.25 10 $0.785 100 $1.25 1000 $0.36663 10000 $0.36663	Buy Now
	2SJ168TE85LF	Reel	12,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.31979	Buy Now
ComSIT USA	2SJ168TE85LF		3,000			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Panasonic Electronic Components ERG-2SJ163 RES 16K OHM 5% 2W AXIAL
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	ERG-2SJ163	Bulk	78		1	1 $0.3 10 $0.169 100 $0.1156 1000 $0.1156 10000 $0.1156	Buy Now
Renesas Electronics Corporation 2SJ162-E MOSFET P-CH 160V 7A TO3P
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2SJ162-E	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Rochester Electronics	2SJ162-E		2		1	1 $27.75 10 $27.75 100 $26.09 1000 $23.59 10000 $23.59	Buy Now
Avnet Silica	2SJ162-E			28 Weeks	1,080	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Win Source Electronics	2SJ162-E		2,774			1 - 10 $6.8661 100 $4.5774 1000 $4.5774 10000 $4.5774	Buy Now
Panasonic Electronic Components ERG-2SJ162 RES 1.6K OHM 5% 2W AXIAL
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	ERG-2SJ162	Bulk				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Newark	ERG-2SJ162	Bulk			6,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Panasonic Electronic Components ERG-2SJ160 RES 16 OHM 5% 2W AXIAL
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	ERG-2SJ160	Bulk				1 - 10 - 100 - 1000 - 10000 -	Buy Now

Find more 2SJ16 price and stock on Findchips.com

2SJ16 Datasheets (93)

Part	Manufacturer	Description	Datasheet Type	PDF
2SJ16	Unknown	Semiconductor Master Cross Reference Guide	Scan	PDF
2SJ16	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
2SJ16	Unknown	FET Data Book	Scan	PDF
2SJ16	Unknown	Basic Transistor and Cross Reference Specification	Scan	PDF
2SJ16	Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF
2SJ160	Hitachi Semiconductor	Silicon P-Channel MOS FET	Original	PDF
2SJ160	Hitachi Semiconductor	Silicon P-Channel MOS FET	Original	PDF
2SJ160	Renesas Technology	Silicon P Channel MOS FET	Original	PDF
2SJ160	Renesas Technology	Silicon P-Channel MOS FET	Original	PDF
2SJ160	Hitachi Semiconductor	Power Transistors Data Book	Scan	PDF
2SJ160	Hitachi Semiconductor	Silicon P-Channel MOS FET	Scan	PDF
2SJ160	Unknown		Scan	PDF
2SJ160	Unknown	FET Data Book	Scan	PDF
2SJ160	Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF

2SJ160	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF
2SJ160-E	Renesas Technology	Silicon P Channel MOS FET	Original	PDF
2SJ161	Hitachi Semiconductor	Silicon P-Channel MOS FET	Original	PDF
2SJ161	Hitachi Semiconductor	Silicon P-Channel MOS FET	Original	PDF
2SJ161	Renesas Technology	Silicon P Channel MOS FET	Original	PDF
2SJ161	Renesas Technology	Silicon P-Channel MOS FET	Original	PDF

2SJ16 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
2SK1104 Abstract: 2SJ0164 2SJ164 Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SJ0164 (2SJ164) Silicon P-channel junction FET For switching circuits Complementary to 2SK1104 • Package Th an W is k y Th e a pro ou Fo an po du fo r f k y log ct r b	Original	2002/95/EC) 2SJ0164 2SJ164) 2SK1104 2SK1104 2SJ0164 2SJ164	PDF
Untitled Abstract: No abstract text available Text: 2SK1103 Silicon Junction FETs Small Signal 2SK1103 Silicon N-Channel Junction Unit : mm For switching Complementary with 2SJ163 +0.2 2.8 –0.3 +0.25 0.65±0.15 1.5 –0.05 0.65±0.15 1.45 +0.1 3 V Drain current ID ±20 mA Gate current IG 10 mA Allowable power dissipation	Original	2SK1103 2SJ163	PDF
2SK1058 Abstract: Hitachi 2SJ Hitachi DSA002780 HITACHI 2sk1058 Text: 2SK1056, 2SK1057, 2SK1058 Silicon N-Channel MOS FET Application Low frequency power amplifier Complementary pair with 2SJ160, 2SJ161 and 2SJ162 Features • • • • • • • Good frequency characteristic High speed switching Wide area of safe operation	Original	2SK1056, 2SK1057, 2SK1058 2SJ160, 2SJ161 2SJ162 2SK1056 2SK1058 Hitachi 2SJ Hitachi DSA002780 HITACHI 2sk1058	PDF
2SJ168 Abstract: 2SK1062 Toshiba 2SJ Text: 2SJ168 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ168 High Speed Switching Applications Analog Switch Applications Interface Applications Unit: mm • Excellent switching time: ton = 14 ns typ. • High forward transfer admittance: \|Yfs\| = 100 mS (min)	Original	2SJ168 2SK1062 2SJ168 2SK1062 Toshiba 2SJ	PDF
specification of 2SK1058 Abstract: 2sk1058 2SJ162 2sk1058 equivalent transistor 2sj162 2SK1058 SAT-12 2SJ160 2SJ161 2SJ162 2SK1056 Text: 2SK1056, 2SK1057, 2SK1058 Silicon N-Channel MOS FET Application Low frequency power amplifier Complementary pair with 2SJ160, 2SJ161 and 2SJ162 Features • • • • • • • Good frequency characteristic High speed switching Wide area of safe operation	Original	2SK1056, 2SK1057, 2SK1058 2SJ160, 2SJ161 2SJ162 2SK1056 specification of 2SK1058 2sk1058 2SJ162 2sk1058 equivalent transistor 2sj162 2SK1058 SAT-12 2SJ160 2SJ162 2SK1056	PDF
2SK1104 Abstract: 2SJ164 SC-72 Text: Silicon Junction FETs Small Signal 2SK1104 Silicon N-Channel Junction FET For switching Complementary to 2SJ164 unit: mm 3.0±0.2 4.0±0.2 • Features 15.6±0.5 ● Low ON-resistance ● Low-noise characteristics Ratings Unit Gate to Drain voltage VGDS	Original	2SK1104 2SJ164 SC-72 2SK1104 2SJ164 SC-72	PDF
Toshiba 2SJ Abstract: No abstract text available Text: 2SJ167 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ167 High Speed Switching Applications Analog Switch Applications Interface Applications • Unit: mm Excellent switching time: ton = 14 ns typ. • High forward transfer admittance: \|Yfs\| = 100 mS (min)	Original	2SJ167 2SK1061 2SJ167esented Toshiba 2SJ	PDF
2SK1104 Abstract: 2SJ164 Text: Silicon Junction FETs Small Signal 2SK1104 Silicon N-Channel Junction FET For switching Complementary to 2SJ164 unit: mm 2.0±0.2 (0.8) 3.0±0.2 4.0±0.2 ● Low ON-resistance ● Low-noise characteristics 7.6 • Features 15.6±0.5 ■ Absolute Maximum Ratings (Ta = 25°C)	Original	2SK1104 2SJ164 2SK1104 2SJ164	PDF
Untitled Abstract: No abstract text available Text: 2SJ168 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ168 High Speed Switching Applications Analog Switch Applications Interface Applications Unit: mm • Excellent switching time: ton = 14 ns typ. • High forward transfer admittance: \|Yfs\| = 100 mS (min)	Original	2SJ168 2SK1062	PDF
2sj162 Abstract: hitachi audio power amplifier HITACHI 2SJ162 2SK1058 2SJ160 Hitachi 2SJ Hitachi DSA002756 2SK1057 hitachi all fet audio application Text: 2SJ160, 2SJ161, 2SJ162 Silicon P-Channel MOS FET Application Low frequency power amplifier Complementary pair with 2SK1056, 2SK1057 and 2SK1058 Features • • • • • • • Good frequency characteristic High speed switching Wide area of safe operation	Original	2SJ160, 2SJ161, 2SJ162 2SK1056, 2SK1057 2SK1058 2SJ160 2sj162 hitachi audio power amplifier HITACHI 2SJ162 2SK1058 Hitachi 2SJ Hitachi DSA002756 hitachi all fet audio application	PDF
Untitled Abstract: No abstract text available Text: Silicon Junction FETs Small Signal 2SK1104 Silicon N-Channel Junction FET For switching Complementary to 2SJ164 unit: mm 2.0±0.2 (0.8) 3.0±0.2 M Di ain sc te on na tin nc ue e/ d 4.0±0.2 ● Low ON-resistance ● Low-noise characteristics 7.6 • Features	Original	2SK1104 2SJ164	PDF
2SJ0163 Abstract: 2SJ163 2SK1103 Text: Silicon Junction FETs Small Signal 2SJ0163 (2SJ163) Silicon P-Channel Junction FET For general switching Complementary to 2SK1103 Unit: mm 0.40+0.10 –0.05 0.16+0.10 –0.06 1.9±0.1 Unit VGDS 65 V Drain current ID −20 mA Gate current IG −10 mA Allowable power dissipation	Original	2SJ0163 2SJ163) 2SK1103 2SJ0163 2SJ163 2SK1103	PDF
2SK1104 Abstract: 2SJ164 2sj16 Text: Silicon Junction FETs Small Signal 2SK1104 Silicon N-Channel Junction FET For switching Complementary to 2SJ164 M Di ain sc te on na tin nc ue e/ d unit: mm 2.0±0.2 ● Low ON-resistance ● Low-noise characteristics 15.6±0.5 • Absolute Maximum Ratings (Ta = 25°C)	Original	2SK1104 2SJ164 2SK1104 2SJ164 2sj16	PDF
Untitled Abstract: No abstract text available Text: 2SJ167 TO SH IBA TOSHIBA FIELD EFFECT TRANSISTOR HIGH SPPED SWITCHING APPLICATIONS SILICON P CHANNEL MOS TYPE 2 S J 1 67 ANALOG SWITCH APPLICATIONS INTERFACE APPLICATIONS Excellent Switching Time t0n - 14 ns Typ. High Forward Transfer Admittance \|Yfs\| = lOOmS (Min.)	OCR Scan	2SJ167 2SK1061 000707EAA1	PDF

K1132 Abstract: 2SJ166 2SJ186 2SK1132 T100 Text: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials. P1 98.2 m - MOS FIELD EFFECT TRANSISTOR ELECTRON DEVICE 2SJ166 P-CHANNEL MOS FET FOR HIGH SPEED SWITCHING	OCR Scan	2SJ166 2SJ166, K1132 2SJ166 2SJ186 2SK1132 T100	PDF
Hitachi 2SJ Abstract: 2SK1058 J162 Text: 2SJ160, 2SJ161, 2SJ162 Silicon P-Channel MOS FET HITACHI November 1996 Application Low frequency power amplifier Complementary pair with 2SK1056, 2SK1057 and 2SK1058 Features • • • • • • • Good frequency characteristic High speed switching Wide area of safe operation	OCR Scan	2SJ160, 2SJ161, 2SJ162 2SK1056, 2SK1057 2SK1058 2SJ160 Hitachi 2SJ 2SK1058 J162	PDF
2SK1132 Abstract: TRANSISTOR DG S-10 ifr 641 2SJ165 TC-7517B Text: MO M O S Field Effect Transistor MOS F E T 2SJ165 {i P • mm F E T T & 9, Ü X >f -y f - > ^ " r 'X ^ f X h L T H i t T - t c # tc , ± 0 :2 J V T R ^ ^ - f 'V F7 > y X ^ => 6‘ • x - i17 f £ - H i â ' C i '0 4-*•■■ < £> & o m 0.42 z s o & A ti4	OCR Scan	2SJ165 2SK1132 TRANSISTOR DG S-10 ifr 641 2SJ165 TC-7517B	PDF
2SJ162 Abstract: 2SJ160 KC510 2SK1058 2SJ161 2SK1056 2SK1057 T160 25J160 25J16 Text: HITACHI 2SJ160,2SJ161,2SJ162 SILICON P-CHANNEL MOS FET LOW FREQUENCY POWER AMPLIFIER Complementary pair with 2SK1056, 2SK1057 and 2SK1058 • FEATURES • • • • • • • 1. Gate Good Frequency Characteristic High Speed Switching Wide Area of Safe Operation	OCR Scan	2SJ160 2SJ161 2SJ162 2SK1056, 2SK1057 2SK1058 Ta-25 Tc-25 25J160 2SJ162 KC510 2SK1058 2SK1056 T160 25J16	PDF
2SK1058 Abstract: 2SJ162 2sk1058 2SJ162 2SK1056 2SJ160 2SJ161 2SK1057 Hitachi Scans-001 Text: 2SK1056, 2SK1057, 2SK1058 Silicon N-Channel MOS FET HITACHI November 1996 Application Low frequency power amplifier Complementary pair with 2SJ160, 2SJ161 and 2SJ162 Features • Good frequency characteristic • High speed switching • Wide area of safe operation	OCR Scan	2SK1056, 2SK1057, 2SK1058 2SJ160, 2SJ161 2SJ162 2SK1056 2SK1058 2SJ162 2sk1058 2SJ162 2SK1056 2SJ160 2SK1057 Hitachi Scans-001	PDF
2SJ167 Abstract: 2SK1061 2SK106 Text: 2SJ167 TO SH IBA TOSHIBA FIELD EFFECT TRANSISTOR HIGH SPPED SWITCHING APPLICATIONS SILICON P CHANNEL MOS TYPE 2 S J 1 67 ANALOG SWITCH APPLICATIONS INTERFACE APPLICATIONS Excellent Switching Time t0n - 14 ns Typ. High Forward Transfer Admittance \|Yfs\| = lOOmS (Min.)	OCR Scan	2SJ167 2SK1061 000707EAA1 2SJ167 2SK1061 2SK106	PDF
Toshiba 2SJ Abstract: 2SK106 Text: 2SJ167 TOSHIBA TOSHIBA FIELD EFFECT TRANSISTOR HIGH SPPED SWITCHING APPLICATIONS SILICON P CHANNEL MOS TYPE 2 S J 16 7 Unit in mm ANALOG SWITCH APPLICATIONS 4.2 IVIAX. INTERFACE APPLICATIONS Excellent Switching Time : ton = 14ns Typ. High Forward Transfer Admittance ; \|Yfs\| = lQOmS (Min,)	OCR Scan	2SJ167 2SK1061 55MAX. Toshiba 2SJ 2SK106	PDF
2SJ170 Abstract: No abstract text available Text: 2SJ169,2SJ 170-blE » • MM'IbSDS O G i a 1^ ÛÛ7 « H I T M H IT ACH I/ OP TOELECTRO NIC S SILICON P-CHANNEL MOS FET HIGH SPEED POWER SWITCHING ■ FEATURES • • Low On-Resistance High Speed Switching • Low Drive Current • • No Secondary Breakdown	OCR Scan	2SJ169, 2SJ170 T0-220A 2SJ170	PDF
Untitled Abstract: No abstract text available Text: TOSHIBA 2SJ167 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE 2 S J 1 67 HIGH SPPED SWITCHING APPLICATIONS Unit in mm ANALOG SWITCH APPLICATIONS 4.2MAX. INTERFACE APPLICATIONS Excellent Switching Time : ton = 14 ns Typ. 0.55MAX. High Forward Transfer Admittance : \|Yfs\| = 100 mS (Min.)	OCR Scan	2SJ167 55MAX. 2SK1061	PDF
k 1058 Abstract: K1058 2sk1058 K1057 Hitachi 2SJ Text: 2SK1056,2SK1057, 2SK1058 Silicon N-Channel MOS FET HITACHI Application Low frequency pow er am plifier C om plem entary pair w ith 2SJ160, 2SJ161 and 2SJ162 Features • G ood frequency characteristic • H igh speed sw itching • W ide area o f safe operation	OCR Scan	2SK1056 2SK1057, 2SK1058 2SJ160, 2SJ161 2SJ162 2SK1057 k 1058 K1058 2sk1058 K1057 Hitachi 2SJ	PDF

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2SJ16 Search Results

2SJ16 Result Highlights (5)

2SJ16 Price and Stock

Toshiba America Electronic Components 2SJ168TE85LF

Panasonic Electronic Components ERG-2SJ163

Renesas Electronics Corporation 2SJ162-E

Panasonic Electronic Components ERG-2SJ162

Panasonic Electronic Components ERG-2SJ160

2SJ16 Datasheets (93)

2SJ16 Datasheets Context Search

2SK1104

Untitled

2SK1058

2SJ168

specification of 2SK1058

2SK1104

Toshiba 2SJ

2SK1104

Untitled

2sj162

Untitled

2SJ0163

2SK1104

Untitled

K1132

Hitachi 2SJ

2SK1132

2SJ162

2SK1058

2SJ167

Toshiba 2SJ

2SJ170

Untitled

k 1058