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    2SJ232 Search Results

    2SJ232 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SJ232 Sanyo Semiconductor P-Channel Silicon MOSFET Original PDF
    2SJ232 Unknown FET Data Book Scan PDF
    2SJ232 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SJ232 Sanyo Semiconductor Ultra High Speed Switching MOSFET Scan PDF

    2SJ232 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SJ232

    Abstract: No abstract text available
    Text: Ordering number:EN3817 P-Channel Silicon MOSFET 2SJ232 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Its height onboard is 9.5mm. · Meets radial taping. unit:mm


    Original
    PDF EN3817 2SJ232 2SJ232] 2SJ232

    2SJ232

    Abstract: ITR00150 ITR00151 ITR00152 ITR00153 ITR00154 ITR00155
    Text: 注文コード No.N 3 8 1 7 2SJ232 三洋半導体データシート 2SJ232 特長 P チャネル MOS 形シリコン電界効果トランジスタ 超高速スイッチング用 ・低オン抵抗。 ・超高速スイッチング。 ・低電圧駆動。


    Original
    PDF 2SJ232 600mA 600mA, --50V --10V ITR00154 ITR00156 2SJ232 ITR00150 ITR00151 ITR00152 ITR00153 ITR00154 ITR00155

    2SJ232

    Abstract: No abstract text available
    Text: Ordering number : EN3817 SANYO Semiconductors DATA SHEET 2SJ232 P-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Its height onboard is 9.5mm.


    Original
    PDF EN3817 2SJ232 2SJ232] 2SJ232

    ALC271X

    Abstract: alc271x audio rt8205e RT8205EGQW KB930 kb930qf KB930QF A1 ENE KB930QF A1 LA-6901P RTM890N-631-VB-GRT
    Text: A B C D E Compal Confidential 1 Model Name : P5WE0 File Name : LA-6901P BOM P/N:43 1 Compal Confidential 2 2 P5WE0 M/B Schematics Document Intel Sandy Bridge Processor with DDRIII + Cougar Point PCH Nvidia N12P GS/GV 2010-08-11 3 3 REV:0.1 4 4 Issued Date


    Original
    PDF LA-6901P ALC271X alc271x audio rt8205e RT8205EGQW KB930 kb930qf KB930QF A1 ENE KB930QF A1 RTM890N-631-VB-GRT

    2sc5203

    Abstract: 2SK3615 2sk*3615 2SK1731 TIG022TS 2SJ633 2SJ646 2SK3492 2SJ636 MCH6005
    Text: Ordering number : E I 0 0 2 3 Announcement Regarding Discontinuation and Limited Availability to Existing Customers of Hyper Device Products Thank you for using SANYO semiconductor products. The following SANYO semiconductor products will be available to existing customers on a limited basis.


    Original
    PDF CPH6405 CPH6434 TIG008SS TIG014SS TIG002SS TIG008TS TIG022TS TIG004SS 2sc5203 2SK3615 2sk*3615 2SK1731 TIG022TS 2SJ633 2SJ646 2SK3492 2SJ636 MCH6005

    Untitled

    Abstract: No abstract text available
    Text: 2SJ232 LD L o w D rive S eries V DSs = 1 0 0 V 2085 P Channel Power M O SFET £.1381 7 F e a tu re s • Low ON resistance. • Very high-speed switching. • Low-voltage drive. •Its height onboard is 9.5mm. ■M eets radial taping. A b so lu te M ax im u m R a tin g s a t Ta = 25°C


    OCR Scan
    PDF 2SJ232 --10V --600mA --20V s----20V 31893MH A8-7974

    2SJ232

    Abstract: EN3817
    Text: Ordering num ber:E N 3 8 1 7 _ 2SJ232 No.3817 P-Channel MOS Silicon FET Very High-Speed Switching Applications F eatu re s •Low ON resistance. • Very high-speed switching. • Low-voltage drive. • Its height onboard is 9.5mm. • Meets radial taping.


    OCR Scan
    PDF EN3817 2SJ232 2SJ232 EN3817

    TO-32-070

    Abstract: 2SA1678 FC102 2SC4449 2SA1416 2SJ193 2sk283 2sC4106 application notes 2SC3383 FC124
    Text: Transistors with Built-in Resistors Absolute maximum ratings Device Package typ» Application te Vcso V Vceo Vebo (V) (V) (mA) Pc (mW) Electrical characteristics (T, = 25 deg. C) IcBQ max # Vc b Ti «les- Ci Ic b o max m hfE & Vce ic Vc b (V) hfH Vce (V)


    OCR Scan
    PDF T0220ML TO-32-070 2SA1678 FC102 2SC4449 2SA1416 2SJ193 2sk283 2sC4106 application notes 2SC3383 FC124

    2SJ270

    Abstract: 2SJ26
    Text: VDSS = 100V, P-channel Absolute maximum ratings atTa = 25°C Type No. Pactage VDSS m 2SJ286 VGSS •o W A CP 0.15 2SJ193 2SJ289 PCP SNIP NMP ±20 100 ±15 2.0 20 4.0 30 (£1) 6.5/9.0 2.4/3.5 Ciss typ typ (S) (pF) 5.0/7.0 0.27 45 1.8/2.4 1.0 160 6.5/9.0 5.0/7.0


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    PDF 2SJ286 2SJ193 2SJ289 2SJ194 2SJ195 2SJ275 2SJ276 2SJ27716 2SJ270 2SJ26

    Untitled

    Abstract: No abstract text available
    Text: Power MOSFETs Electrical characteristic» T. » 31 °Q AtooMe mKknum ratings . Owto» _ - Pwtogi Appflcaflons m _ ' _ Voss » _ Voss w t# w 2SJ284* CP Very high-speed switch 30 ±15 0.3 2SJ285* CP Very high-speed switch 60 ±15 0.25 2SJ286* CP Very high-speed switch


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    PDF 2SJ284* 2SJ286* 2SK1847 2SJ285* 2SJ233 2SK1731 2SK1732 2SK1734 2SK1735 DD14SSD

    2SJ468

    Abstract: 2SJ191 2SJ271 2SJ260 2SJ189 2SJ192 2SJ194 2SJ195 2SJ281 2SJ336
    Text: Continued from previous page Electrical characteristics Ta = 25 V Absolute maximum ratings Type No. Package type Applications Rds(<w) @ Id •VGS VOSS (V) VGSS (V) ID (A) PD (W) Tdi OC) |Yfi|@ VDS ■ID RDS(mi) max(Q) Id (A) VGS (V) JA VDS (V) (A) 2S JI8 8


    OCR Scan
    PDF 2SJI88 2SJ189 2SJ191 2SJ192 2SJ194 2SJ195 2SJ253 T0220 2SJ260 2SJ468 2SJ271 2SJ281 2SJ336

    2SJ239

    Abstract: 2SJ238 2sJ241 2SJ240 2SJ292 2SJ295 2SJ230 2SJ231 2SJ232 2SJ234
    Text: - 26 - f 33 € tt m € & £ ft . m ffi K E 2SJ230 Hi¥ HS SV MOS P 2SJ231 =& HS SW MOS P E V* V m * (V) * * 48 % 3 I* X P d /P c h (A) * * (W) I gss (max) (A) Vg s (V) w Ip s (min) (max) Vd s (A) (A) (V) (Ta'25°C) tt (min) (max) Vd s (V) (V) (V) -60 DSS


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    PDF Ta-25 2SJ230 2SJ231 2SJ232 2SJZ33 2SJ234Ã 155ns, 500nstyp 2SJ291 200ns, 2SJ239 2SJ238 2sJ241 2SJ240 2SJ292 2SJ295 2SJ232 2SJ234