2SJ49 Search Results

2SJ49 Result Highlights (5)

Part	Manufacturer	Description
2SJ496TZ-E	Renesas Electronics Corporation	Pch Single Power Mosfet -60V -5A 160Mohm To-92 Mod
2SJ495-AZ	Renesas Electronics Corporation	Power MOSFETs for Automotive
2SJ494-AZ	Renesas Electronics Corporation	Switching P-Channel Power MOSFET
2SJ493-AZ	Renesas Electronics Corporation	Switching P-Channel Power MOSFET, MP-45F, /Bag
2SJ495-S12-AZ	Renesas Electronics Corporation	Power MOSFETs for Automotive, MP-45F, /

2SJ49 Price and Stock

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Rochester Electronics LLC 2SJ499-TL-E PCH 4V DRIVE SERIES
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2SJ499-TL-E	Bulk			296	1 - 10 - 100 - 1000 $1.01 10000 $1.01	Buy Now
Rochester Electronics LLC 2SJ495-S12-AZ P-CHANNEL POWER MOSFET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2SJ495-S12-AZ	Bulk			79	1 - 10 - 100 $3.81 1000 $3.81 10000 $3.81	Buy Now
MIT 2SJ498-12-E
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	2SJ498-12-E		9,000			1 - 10 - 100 - 1000 - 10000 -	Get Quote
onsemi 2SJ499-TL-E 2SJ499 - P-Channel 4V Drive Series '
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Rochester Electronics	2SJ499-TL-E		4,200		1	1 $0.9751 10 $0.9751 100 $0.9166 1000 $0.8288 10000 $0.8288	Buy Now
Renesas Electronics Corporation 2SJ492-AZ 2SJ492 - Power Field-Effect Transistor, 20A, 60V, P-Channel MOSFET '
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Rochester Electronics	2SJ492-AZ		7		1	1 $2.76 10 $2.76 100 $2.59 1000 $2.35 10000 $2.35	Buy Now

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2SJ49 Datasheets (39)

Part	Manufacturer	Description	Datasheet Type	PDF
2SJ49	Hitachi Semiconductor	LOW FREQUENCY POWER AMPLIFIER	Scan	PDF
2SJ49	Hitachi Semiconductor	Power Transistors Data Book	Scan	PDF
2SJ49	Unknown	Basic Transistor and Cross Reference Specification	Scan	PDF
2SJ49	Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF
2SJ49	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF
2SJ49	Unknown	Semiconductor Master Cross Reference Guide	Scan	PDF
2SJ49	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
2SJ49	Unknown		Scan	PDF
2SJ49	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF
2SJ49	Unknown	FET Data Book	Scan	PDF
2SJ490	Shindengen Electric	Power MOSFET Selection Guide	Original	PDF
2SJ490	Shindengen Electric	Power MOS FET	Scan	PDF
2SJ491	Shindengen Electric	Power MOSFET Selection Guide	Original	PDF
2SJ491	Shindengen Electric	Power MOS FET	Scan	PDF

2SJ492	Kexin	P-Channel MOSFET	Original	PDF
2SJ492	NEC	SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE	Original	PDF
2SJ492	NEC	Semiconductor Selection Guide	Original	PDF
2SJ492-S	NEC	SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE	Original	PDF
2SJ492-ZJ	NEC	SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE	Original	PDF
2SJ493	NEC	SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE	Original	PDF

2SJ49 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
2SJ493 Abstract: No abstract text available Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ493 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION This product is P-Channel MOS Field Effect Transistor PART NUMBER PACKAGE 2SJ493 Isolated TO-220 designed for high current switching applications.	Original	2SJ493 O-220 2SJ493	PDF
mosfet 2SJ499 Abstract: 2SJ499 Text: Ordering number : ENN6589 2SJ499 P-Channel Silicon MOSFET 2SJ499 Load Switching Applications Features Low ON-state resistance. 4V drive. unit : mm 2083B [2SJ499] 2.3 0.5 5.5 7.0 1.5 6.5 5.0 4 1.2 7.5 0.8 1.6 0.85 0.7 0.6 0.5 1 2 1 : Gate 2 : Drain 3 : Source	Original	ENN6589 2SJ499 2083B 2SJ499] 2092B mosfet 2SJ499 2SJ499	PDF
Untitled Abstract: No abstract text available Text: Preliminary Datasheet 2SJ496 R07DS0433EJ0400 Previous: REJ03G0870-0300 Rev.4.00 Jun 07, 2011 Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on) = 0.12 Ω typ. (at VGS = –10 V, ID = –2.5 A) • 4 V gate drive devices.	Original	2SJ496 R07DS0433EJ0400 REJ03G0870-0300) PRSS0003DC-A	PDF
PC1094C Abstract: tea 1020 2SJ494 1094g 682 FET TEI-603 MEB-504 TEA 0298 MOS 4011 Text: データ・シート MOS形電界効果パワートランジスタ MOS Field Effect Power Transistors 2SJ494 ＰチャネルパワーMOS FET スイッチング用工業用本製品はＰチャネル縦型パワーMOS FETで，スイッチング特性が優れており，各種アクチュエータ駆動回路やスイ	Original	2SJ494 O-220MP-45F 108-0171NEC 46017NEC 54024NEC PC1094C tea 1020 2SJ494 1094g 682 FET TEI-603 MEB-504 TEA 0298 MOS 4011	PDF
2SJ493 Abstract: pc1094 tea 1020 Text: データ・シート MOS形電界効果パワートランジスタ MOS Field Effect Power Transistors 2SJ493 PチャネルパワーMOS FET スイッチング用工業用本製品はＰチャネル縦型パワーMOS FETで，オン抵抗特性が優れており，各種アクチュエータ駆動回路やスイッチ	Original	2SJ493 O-220MP-45F PW10s, 108-0171NEC 46017NEC 54024NEC 2SJ493 pc1094 tea 1020	PDF
2SJ492 Abstract: 2SJ492-S 2SJ492-ZJ MP-25 Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ492 SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION This product is P-Channel MOS Field Effect Transistor designed for DC/DC converters and motor/lamp driver circuits. FEATURES ORDERING INFORMATION • Low on-state resistance	Original	2SJ492 O-220AB MP-25) 2SJ492-S O-262 MP-25 2SJ492-ZJ O-220SMD MP-25ZJ) 2SJ492 2SJ492-S 2SJ492-ZJ	PDF
C11892E Abstract: 2SJ495 TEA-1035 A3856 m30 tf 125 Text: DATA SHEET MOS FIELD EFFECT POWER TRANSISTORS 2SJ495 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS This product is P-Channel MOS Field Effect Transistor in millimeter designed for high current switching applications. 10.0 ± 0.3	Original	2SJ495 C11892E 2SJ495 TEA-1035 A3856 m30 tf 125	PDF
2SJ492 Abstract: No abstract text available Text: MOSFET SMD Type MOS Field Effect Transistor 2SJ492 TO-263 +0.1 1.27-0.1 RDS on 2 = 185 m (MAX.) (VGS =-4 V, ID =-10 A) Low Ciss: Ciss = 1210 pF (TYP.) 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 Built-in gate protection diode +0.2 4.57-0.2 5.60 (MAX.) (VGS = -10 V, ID = -10 A)	Original	2SJ492 O-263 --10A 2SJ492	PDF
2SJ499 Abstract: N6589 Text: 注文コード No. N 6 5 8 9 2SJ499 No. N6589 63000 新 2SJ499 特長 P チャネル MOS 形シリコン電界効果トランジスタロードスイッチ用・低オン抵抗。・ 4V駆動。絶対最大定格 Absolute Maximum Ratings / Ta=25℃ ドレイン・ソース電圧	Original	2SJ499 N6589 2092B IT01954 IT01953 --15V --10V IT01952 IT01955 2SJ499 N6589	PDF
Untitled Abstract: No abstract text available Text: 2SJ499 P- Channel Silicon MOS FET TENTATIVE Features and Applications • Low ON-state resistance. • 4V drive. Absolute Maximum Ratings / Ta=25°C Drain to Source Voltage Gate to Source Voltage Drain Current DC Drain Current(Pulse) Allowable power Dissipation	Original	2SJ499 --30V --10V --10V --15V	PDF
Hitachi 2SJ Abstract: Hitachi DSA00279 Text: 2SJ496 Silicon P-Channel MOS FET High Speed Power Switching ADE-208-482 1st. Edition Features • Low on-resistance R DS on = 0.12Ω typ. (at VGS = –10 V, I D = –2.5 A) • 4V gate drive devices. • Large current capacitance ID = –5 A Outline 2SJ496	Original	2SJ496 ADE-208-482 Hitachi 2SJ Hitachi DSA00279	PDF
2SJ496 Abstract: 2SJ496TZ-E PRSS0003DC-A Text: 2SJ496 Silicon P Channel MOS FET REJ03G0870-0300 Previous: ADE-208-482A Rev.3.00 Sep 07, 2005 Description High speed power switching Features • Low on-resistance RDS (on) = 0.12 Ω typ. (at VGS = –10 V, ID = –2.5 A) • 4 V gate drive devices. • Large current capacitance	Original	2SJ496 REJ03G0870-0300 ADE-208-482A) PRSS0003DC-A 2SJ496 2SJ496TZ-E PRSS0003DC-A	PDF
2SJ492 Abstract: 2SJ492-S 2SJ492-ZJ MP-25 Text: データ・シート MOS 形電界効果トランジスタ MOS Field Effect Transistor 2SJ492 P チャネル・パワーMOS FET スイッチング用 2SJ492 は P チャネル縦型パワーMOS FET で，スイッチング特性が優れており，各種アクチュエータ駆動用途や	Original	2SJ492 O-262 MP-25 2SJ492-ZJ O-220AB MP-25) 2SJ492-S O-220SMD 2SJ492 2SJ492-S 2SJ492-ZJ	PDF
2SJ492 Abstract: 2SJ492-S 2SJ492-ZJ MP-25 Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ492 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION This product is P-Channel MOS Field Effect Transistor PART NUMBER PACKAGE 2SJ492 TO-220AB 2SJ492-S TO-262 2SJ492-ZJ TO-263 designed for DC/DC converters and motor/lamp driver	Original	2SJ492 O-220AB 2SJ492-S O-262 2SJ492-ZJ O-263 2SJ492 2SJ492-S 2SJ492-ZJ MP-25	PDF

Untitled Abstract: No abstract text available Text: Preliminary Datasheet 2SJ496 R07DS0433EJ0400 Previous: REJ03G0870-0300 Rev.4.00 Jun 07, 2011 Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on) = 0.12 Ω typ. (at VGS = –10 V, ID = –2.5 A) • 4 V gate drive devices.	Original	2SJ496 R07DS0433EJ0400 REJ03G0870-0300) PRSS0003DC-A	PDF
2SJ496 Abstract: Hitachi 2SJ DSA003642 Text: 2SJ496 Silicon P-Channel MOS FET High Speed Power Switching ADE-208-482A Z 2nd. Edition Mar. 2001 Features • Low on-resistance R DS(on) = 0.12Ω typ. (at VGS = –10 V, I D = –2.5 A) • 4V gate drive devices. • Large current capacitance ID = –5 A	Original	2SJ496 ADE-208-482A 2SJ496 Hitachi 2SJ DSA003642	PDF
2SJ496 Abstract: No abstract text available Text: 2SJ496 Silicon P-Channel MOS FET High Speed Power Switching ADE-208-482 1st. Edition Features • Low on-resistance R DS on = 0.12Ω typ. (at VGS = –10 V, I D = –2.5 A) • 4V gate drive devices. • Large current capacitance ID = –5 A Outline TO-92 Mod	Original	2SJ496 ADE-208-482 2SJ496	PDF
PC1094 Abstract: tea 1020 2SJ495 D1126 Text: データ・シート MOS形電界効果パワートランジスタ MOS Field Effect Power Transistors 2SJ495 PチャネルパワーMOSFET スイッチング用工業用本製品はＰチャネル縦型パワーMOSFETで，オン抵抗特性が優れており，各種アクチュエータ駆動回路やスイッチ	Original	2SJ495 MP-45FISOLATED O-220 PW10s, 108-0171NEC 46017NEC 54024NEC PC1094 tea 1020 2SJ495 D1126	PDF
Hitachi 2SJ Abstract: Hitachi DSA002757 Text: 2SJ496 Silicon P-Channel MOS FET High Speed Power Switching ADE-208-482 1st. Edition Features • Low on-resistance R DS on = 0.12Ω typ. (at VGS = –10 V, I D = –2.5 A) • 4V gate drive devices. • Large current capacitance ID = –5 A Outline 2SJ496	Original	2SJ496 ADE-208-482 Hitachi 2SJ Hitachi DSA002757	PDF
Untitled Abstract: No abstract text available Text: _ DATA SHEET_ MOS FIELD EFFECT POWER TRANSISTORS 2SJ494 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE PACKAGE DIMENSIONS DESCRIPTION in millimeter This product is P-Channel MOS Field Effect Transistor designed for high current switching applications.	OCR Scan	2SJ494	PDF
Untitled Abstract: No abstract text available Text: DATA SHEET MOS FIELD EFFECT POWER TRANSISTORS 2SJ494 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE PACKAGE DIMENSIONS DESCRIPTION in millimeter This product is P-Channel MOS Field Effect Transistor designed for high current switching applications. 10 .0 ± 0.3	OCR Scan	2SJ494	PDF
2sk135 Abstract: 2SK134 2SJ49 2sk134 hitachi 2sk135 2SK133 2Sk135 HITACHI 2Sk134 HITACHI 2SK13S HITACHI 2SK133 2sk133 2Sj48 Text: blE D *44^205 ÜD13D0Ö 217 IHIT4 2SK133,2SK134,2SK135 HITACHI/ OPTOELECTRONICS SILICON N-CHANNEL MOS FET LOW FREQUENCY POWER AMPLIFIER Complementary pair with 2SJ48, 2SJ49, 2SJ50 • FEATURES • • • • • • • High Power Gain. Excellent Frequency Response.	OCR Scan	D13D0Ö 2SK133 2SK134 2SK135 2SJ48, 2SJ49, 2SJ50 35FOR 2sk135 2SJ49 2sk134 hitachi 2sk135 2Sk135 HITACHI 2Sk134 HITACHI 2SK13S HITACHI 2SK133 2sk133 2Sj48	PDF
C11892E Abstract: TEA-1037 D1297 Text: DATA SHEET MOS FIELD EFFECT POWER TRANSISTORS 2SJ495 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE PACKAGE DIMENSIONS DESCRIPTION in m illim eter T his product is P-Channel MOS Field Effect Transistor designed for high current switching applications.	OCR Scan	2SJ495 C11892E TEA-1037 D1297	PDF
Untitled Abstract: No abstract text available Text: DATA SHEET MOS FIELD EFFECT POWER TRANSISTORS 2SJ495 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS in m illim eter This product is P-Channel MOS Field E ffect Transistor designed for high current switching applications.	OCR Scan	2SJ495	PDF

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2SJ49 Search Results

2SJ49 Result Highlights (5)

2SJ49 Price and Stock

Rochester Electronics LLC 2SJ499-TL-E

Rochester Electronics LLC 2SJ495-S12-AZ

MIT 2SJ498-12-E

onsemi 2SJ499-TL-E

Renesas Electronics Corporation 2SJ492-AZ

2SJ49 Datasheets (39)

2SJ49 Datasheets Context Search

2SJ493

mosfet 2SJ499

Untitled

PC1094C

2SJ493

2SJ492

C11892E

2SJ492

2SJ499

Untitled

Hitachi 2SJ

2SJ496

2SJ492

2SJ492

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2SJ496

2SJ496

PC1094

Hitachi 2SJ

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2sk135

C11892E

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