2SK1194 Search Results

N and P MOSFET

Contextual Info: /X*7— M O SFET Power MOSFET N-Channel, Enhancement type • O U T L IN E D IM E N S IO N S Case ." E -pack 2SK1194 2.55 ±0-2 230V 0.5A 0.5 * 0-! \ 0.5 1.1 ± 0-2 \ Gate . / Source Drain / ■ Unit • R A TIN G S A bsolute Maximum R atings m It e m B J

2SK1395

Abstract: 2sk2006 2SK1539 2SK1685
Contextual Info: E IA J No. SM D jj&no v 2SK1861 2SK1931 2SK1194 2SK1195 2SK1672 2SK1533 2SK2005 2SK2006 LVX S eries 2SK1391 2SK1392 2SK1393 2SK1394 2SK1395 2SK1396 2SK1397 2SK1810 2SK1811 2SK1812 VX S e rie s 2SK1672 2SK1244 2SK1245 2SK1246 2SK1247 2SK1693 2SK1694 2SK1695

2SK1194

Abstract: POWER MOSFET N-Channel 230V F05E23 230V Mosfet
Contextual Info: SHINDENGEN VR Series Power MOSFET 2SK1194 N-Channel Enhancement type OUTLINE DIMENSIONS F05E23 Case : E-pack (Unit : mm) 230V 0.5A FEATURES ● Applicable to 4V drive. ● The static Rds(on) is small. ● Built-in ZD for Gate Protection. APPLICATION ● DC/DC converters

Contextual Info: SHINDENGEN VR Series Power MOSFET 2SK1194 N-Channel Enhancement type OUTLINE DIMENSIONS F05E23 Case : E-pack (Unit : mm) 230V 0.5A FEATURES Applicable to 4V drive. The static Rds(on) is small. Built-in ZD for Gate Protection. APPLICATION DC/DC converters

Contextual Info: SMDÜW p S 'U -X / t 9 —MOSFET SURFACE MOUNTING TECHNOLOGY DEVICE • N- f v Z j l r , X > A > X X > b M O U T L IN E D IM E N S IO N S Case : E-pack 2SK1194 F 0 5 E 2 3 2.55 ±0 -2 230V 0.5a 0 .5 ± 0 1 0.5 1.1 = [U nit • mm] ■ ÎÈ fê it R A TIN G S

LL200C

Contextual Info: M OSFET i.»\>7.*>bW Power MOSFET • N-Channel, Enhancement type O U T L IN E D IM E N S IO N S 2SK1194 230V 0.5A ■ æ fê * R A T IN G S Absolute Maximum Ratings m Item b2 -fSymbol s IS ÿ fit S to ra g e T em p eratu re ~f~ jf» Jf. Channel T em perature

2SK1194

Abstract: F05E23
Contextual Info: SHINDENGEN VR Series Power MOSFET 2SK1194 F05E23 N-Channel Enhancement type OUTLINE DIMENSIONS Case : E-pack (Unit : mm) 230V 0.5A FEATURES Applicable to 4V drive. The static Rds(on) is small. Built-in ZD for Gate Protection. APPLICATION DC/DC converters

2SK1194

Abstract: F05E23 S200
Contextual Info: S M D S io n v 'J - X /17-M O SFET SURFACE MOUNTING TECH N OLO GY DEVICE • O U T L I N E D IM E N S IO N S Case ! E-p a ck 2SK1194 F0 5 E2 3 6.6^02 5.2 ± 0.2 230V 0.5A E I A J No. 2.55 ± °-2 0 .5 ± o i N N D ate code 1194 05 (1) G ate (2) D rain S o u rc e

2sk1197

Abstract: 2501L NEC 2501L 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 2SK1159
Contextual Info: f m £ Ÿ± m « m m & =£ ü V* * % K V s a * X P d /P c h I* (V) (A) ft 9t (W) Ig s s (max) (A) Vgs (V) to ^33. 3 «B. fé £ Vg s * X ÌD >S (min) (max) V d s (A) (V) (A) n (Ta=25°C) te (min) (max) Vos (V) (V) (V) 9m (min) (typ) V d s (V) (S) (S)

Contextual Info: S M D » flr> U - X /\°7 ~ M 0 S F E T Surface Mounting Technology Device O U T L IN E D IM E N S IO N S 2 S K 1 1 9 4 Case : E-pack [F05E23] 230V 0.5A • A * S * [Unit ! mm] 6.6 ^ 2 .5 5 ±0-2 5.2 “ 0510.1 E IA J No. C is s a -y I- 12*« (« N •zy&föm&u.

Contextual Info: Power MOSFETs VZ series STO-220 SMD Electrical Characteristics Absolute Maximum Ratings Type No. Pt DSS I . .i. y ] _ . . A ! 2SK2489 2SK2491 180 10 20 . V gss [W ] . 45 70 STO-220 (Lead type) Tch C ks Crss ton toff (max)

e5lc

Abstract: E3SD
Contextual Info: H S x 7 K 7 . S M D < 7 ) f t : * E I Diagram of the Surface Mounting Devices □n ^ T ype No. / < r7 — h - 7 > ' / Z . $ Application 2SA1795 • DC-DCZ1 > / < - 9 2SA1796 • ? 3 "J — Power T ra n sistor 2SC 4668 2SC 4669 • ï - ÿ K 7 -f 7 • n > 7 - K 7 ' f ?

4311 mosfet transistor

Abstract: 2SK2068 2sc 1027 transistor 4-071 transistor 2SK2067 S2VC 4102 transistor s2ld s4vb bridge rectifier 4072
Contextual Info: O rd erin g and P a c k in g In fo rm a tio n Explanation of Packing Lists 1. Parts No. Example: 1 Tape & Reel Surface Mount Devices D 1N□ Maximum Reverse Voltage Example: 2 2. 3. 2SC3164 Transistor or MOSFET ^ Besides SC, there are SA, SB, SD and SK devices.

D1F40

Abstract: S1ZB40 200v 10A mosfet diode 2f D1F10 DIODE D1F20 S1ZA40 diode rm 62 mosfet 600V 30A S1WB S 40 68
Contextual Info: h7>yX^ T ra n sisto r Vi KO 2 S A l 795 2SA1796 2SC4668 2SC4669 -5A -7A 7A 10A MOSFET R e ctifie r Diode Vi is s Id 0.5A 1.0A 1.0A 1.5A V rm Io 1.0A 1.1A 1.4 A Bridge Diode_ V rm 10 0.8A S c h o ttk y B a rrie r Diode ' Io V rm 1.1A 1.6A 3 .0 A

smd diode K7

Abstract: TRANSISTOR SMD wb smd transistor 2f smd diode 2F S1WB S 40 68 SMD tr 2f transistor 2F I smd diode 2F 7A rectifier s1wb transistor SMD 2f
Contextual Info: W M S M D <M*%m Diagram of the Surface Mounting Devices pa £3 Type No. A’ 7 ~ h 7 > y ^ Application 2SA 1795 • D C - D C z i> M — £ 2SA 1796 • *a v/i- Power Transistor 2SC 4668 2SC 4669 • dn^&^s KP y • i —2 K7 -Y • ; \ > v - K-7< 7 • DC-DC Converter

2SK1672

Abstract: 2SK1533 2sk2280 2SK228
Contextual Info: N & P CHANNEL POWER MOSFETS N AND P CHANNEL ENHANCEMENT MODE • UP TO 900V AT 1.0 AMP WITH 2KV DIELECTRIC STRENGTH • LOW INPUT CAPACITANCE, LOW RDS ON AND FAST SWITCHING TIMES N CHANNEL ENHANCEMENT MODE TC = 25˚C The latest comprehensive data to fully