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    2SK12 Search Results

    2SK12 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SK1283-AZ Renesas Electronics Corporation Silicon N Channel MOSFET, MP-5, /Bag Visit Renesas Electronics Corporation
    2SK1272-AZ Renesas Electronics Corporation Silicon N Channel MOSFET, TO-92, /Bag Visit Renesas Electronics Corporation
    2SK1273-T1-AZ Renesas Electronics Corporation Power MOSFETs for Automotive Visit Renesas Electronics Corporation
    2SK1284-Z-E1-AY Renesas Electronics Corporation Silicon N Channel MOSFET Visit Renesas Electronics Corporation
    2SK1288-AZ Renesas Electronics Corporation Silicon N Channel MOSFET, MP-45F, /Bag Visit Renesas Electronics Corporation
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    2SK12 Price and Stock

    Panasonic Electronic Components 2SK122800L

    MOSFET N-CH 50V 50MA MINI3-G1
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    Rochester Electronics LLC 2SK1274-AZ

    N-CHANNEL POWER MOSFET
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    DigiKey 2SK1274-AZ Bulk 580
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    Rochester Electronics LLC 2SK1283-AZ

    N-CHANNEL POWER MOSFET
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    DigiKey 2SK1283-AZ Bulk 229
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    Rochester Electronics LLC 2SK1285-AZ

    N-CHANNEL POWER MOSFET
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    DigiKey 2SK1285-AZ Bulk 34
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    Rochester Electronics LLC 2SK1286-AZ

    N-CHANNEL POWER MOSFET
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    DigiKey 2SK1286-AZ Bulk 163
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    2SK12 Datasheets (500)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK12 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2SK12 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2SK12 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SK12 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SK12 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SK12 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SK12 Unknown FET Data Book Scan PDF
    2SK12 National Semiconductor Shortform National Semiconductor Datasheet Short Form PDF
    2SK12 Toshiba (2SK11x) N-CHANNEL JFET TRANSISTOR Scan PDF
    2SK12 Toshiba Japanese Transistor Data Book Scan PDF
    2SK120 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2SK120 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SK120 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SK120 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SK120 Unknown FET Data Book Scan PDF
    2SK1200 Hitachi Semiconductor Power Transistors Data Book Scan PDF
    2SK1200 Hitachi Semiconductor Silicon N-Channel MOS FET Scan PDF
    2SK1200 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SK1200 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SK1200 Unknown Catalog Scans - Shortform Datasheet Scan PDF
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    2SK1277

    Abstract: No abstract text available
    Text: 2SK1277 N-channel MOS-FET F-V Series 250V > Features 0,12Ω 30A 150W > Outline Drawing - Include Fast Recovery Diode - High Voltage - Low Driving Power > Applications - Motor Control - Inverters - Choppers > Maximum Ratings and Characteristics > Equivalent Circuit


    Original     		PDF 2SK1277 2SK1277

    Untitled

    Abstract: No abstract text available
    Text: 2SK1280 N-channel MOS-FET F-V Series 500V > Features 0,5Ω 18A 150W > Outline Drawing - Include Fast Recovery Diode - High Voltage - Low Driving Power > Applications - Motor Control - Inverters - Choppers > Maximum Ratings and Characteristics > Equivalent Circuit


    Original     		PDF 2SK1280

    05815A

    Abstract: 500V0 2SK1279 UA3000 MOSFET 500V 15A
    Text: 2SK1279 N-channel MOS-FET F-V Series 500V > Features 0,58Ω 15A 125W > Outline Drawing - Include Fast Recovery Diode - High Voltage - Low Driving Power > Applications - Motor Control - Inverters - Choppers > Maximum Ratings and Characteristics > Equivalent Circuit


    Original     		PDF 2SK1279 05815A 500V0 2SK1279 UA3000 MOSFET 500V 15A

    2SK1228-(TX)

    Abstract: No abstract text available
    Text: 2SK1228 Silicon MOS FETs Small Signal 2SK1228 Silicon N-Channel MOS Unit : mm For switching +0.2 2.8 –0.3 +0.25 ● 2.5V drive possible 1.45 Gate-protection diode built-in 1 3 +0.1 ● 0.65±0.15 Gate-Source voltage VGSO 10 V Drain current ID ±50 mA Max drain current


    Original     		PDF 2SK1228 2SK1228-(TX)

    2SK1011

    Abstract: 2SK1007-01 2SK1009-01 2SK1011-01 2SK1013-01 2SK1101-01M 2SK1221-01 2SK1222-01 2SK1917-01M 2sk1211
    Text: COLLHER SEMICONDUCTOR INC b3E D • 523fl7^2 D0G1Ô71 SMI « C O L MOSFETs <§ FAP-II Series VGS ± 30V, High Avalanche Ruggedness, Reduced Turn-Off Time 500-1000 Volts ! ! I I Device Tvoe 2SK1221-01 2SK1917-01M 2SK1007-01 2SK1009-01 2SK1011-01 2SK1101-01M


    OCR Scan     		PDF 2SK1221-01 T0220 2SK1917-01M T0220F15 2SK1007-01 2SK1009-01 2SK1011-01 2SK1101-01M 2SK1011 2SK1013-01 2SK1222-01 2sk1211

    2SK1293

    Abstract: MEI-1202 TEA-1035 AK 1034 TEA1035
    Text: DATA SHEET NEC i MOS FIELD EFFECT POWER TRANSISTOR 2SK1293 À SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK1293 is N-channel MOS Field Effect Transistor de­ PACKAGE DIMENSIONS in millimeters signed for solenoid, motor and lamp driver.


    OCR Scan     		PDF 2SK1293 IEI-1209) MEI-1202 TEA-1035 AK 1034 TEA1035

    2SK1275

    Abstract: D0135
    Text: MMTbSGS Q0132Ö4 7Tb • H I T 4 2SK1275SILICON N-CHANNEL MOS FET HIGH SPEED POWER SWITCHING ■ FEATURES # Low On-Resistance # High Speed Switching 1. # Low Drive Current # No Secondary Breakdown # Suitable for Switching Regulator and Gate 2. D ra in 3. Source


    OCR Scan     		PDF Q0132Ã T0-220FM) Tc-25 2SK1275 D0135

    2SK1258

    Abstract: SC-65
    Text: Power F-MOS FET 2SK1258 2SK1258 Silicon N-channel Power F-MOS FET • Features Package Dimensions • Low ON re sistan c e RDb on : RDS (on) l = 0 . 0 2 i l (typ.) • High sw itching ra te : t( = 350ns (typ.) • No secondary breakdow n Unit: mm 25.5max.


    OCR Scan     		PDF 2SK1258 350ns 2SK1258 SC-65

    251C

    Abstract: 2SK1214 H150
    Text: P ow er F-MOS FET 2SK 1214 2SK1214 Silicon N-channel Power F-M O S FET Package Dimensions • Features • • • • Low ON resistan ce RDS on : RDs (on) l = 0 .0 6 il (typ.) High sw itching rate : tf= 110ns (typ.) No secondary breakdow n Low voltage drive is possible (VGs= 4 V ).


    OCR Scan     		PDF 2SK1214 110ns 251C 2SK1214 H150

    2SK1271

    Abstract: MEI-1202 TEA-1035
    Text: Notice: You cannot copy or search for text in this PDF file, because this PDF file is converted from the scanned image of printed materials._ P1 98.2 DATA SHEET NEC iff— 2SK1271 N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR r SWITCHING N-CHANNEL POWER MOS FET


    OCR Scan     		PDF 2SK1271 2SK1271 MEI-1202 TEA-1035

    Untitled

    Abstract: No abstract text available
    Text: 2SK1299 L , 2SK1299(S) Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device — Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive


    OCR Scan     		PDF 2SK1299 2SK1299Ã

    2SK1273

    Abstract: IEI-1213 MEI-1202
    Text: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK1273 N-CHANNEL MOS FET FOR HIGH SPEED SWITCHING PACKAGE DIMENSIONS Unit : mm


    OCR Scan     		PDF 2SK1273 2SK1273, 2SK1273 IEI-1213 MEI-1202

    2SK1778

    Abstract: 27.145 2SK1296 2SJ172 2SJ173 2SJ174 2SJ247 2SK1300 2SK1301 2SK1302
    Text: HITACHI 9 Table 6 : DIII-L Series Typical Characteristics Cont'd Electrical Characteristics typ. Absolute Maximum Ratings Package TO-220AB TO-220FM T0-3P T0-3P-FM Type Number 2SJ172 2SJ173 2SJ174 2SK970 2SK971 2SK972 2SK1296 2SK1300 2SK1301 2SK1302 2SJ247


    OCR Scan     		PDF 2SJ172 2SJ173 2SJ174 2SK970 2SK971 2SK972 2SK1296 2SK1300 2SK13003 2SK1665 2SK1778 27.145 2SK1296 2SJ172 2SJ174 2SJ247 2SK1300 2SK1301 2SK1302

    T0220F

    Abstract: 2sk1512 2SK1217 2SK1511 T0-220F 2SK1084 2SK1388 2MI200F-025 2sk1018 2SK1390
    Text: 22307^2 ODGISTT OTT « C O L COLLHER SEMICONDUCTOR INC MÛE » •v-m-yy MUSFETS s F-ll SERIES (toff 30% REDUCED, VGS=30V (cont’d.) Device Type 2SK1082 2SK962 2SK1217 2SK1512 2SK1511 R atings Id (A) V dss OO 900 900 900 900 1000 C h aracteristics (Tc=25°C)


    OCR Scan     		PDF 2SK1082 2SK962 2SK1217 T03PF 2SK1512 2SK1511 2SK1008-01 T0220 2SK1010-01 T0220F T0-220F 2SK1084 2SK1388 2MI200F-025 2sk1018 2SK1390

    2sk1507

    Abstract: 2SK1011-01 2SK1018-01 2sk1018 2SK1820-01 2SK956 2SK1007-01 2SK1009-01 2SK1013-01 2SK1101-01M
    Text: COLLHER SEMICONDUCTOR INC b3E D • 523fl7^2 D0G1Ô71 SMI « C O L MOSFETs <§ FAP-II Series VGS ± 30V, High Avalanche Ruggedness, Reduced Turn-Off Time 500-1000 Volts ! ! I I Device Tvoe 2SK1221-01 2SK1917-01M 2SK1007-01 2SK1009-01 2SK1011-01 2SK1101-01M


    OCR Scan     		PDF 2SK1221-01 T0220 2SK1917-01M T0220F15 2SK1007-01 2SK1009-01 2SK1011-01 2SK1101-01M 2sk1507 2SK1018-01 2sk1018 2SK1820-01 2SK956 2SK1013-01

    TT 2158

    Abstract: No abstract text available
    Text: 2SK1212-01R FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET F-I SERIES • Features • High current • Low orwesistance • No secondary breakdown • Low driving power • Avalanche-proof ■ Applications • DC-DC converters • Motor controllers • Gt neral purpose power amplifier


    OCR Scan     		PDF 2SK1212-01R STg30 TT 2158

    Untitled

    Abstract: No abstract text available
    Text: Power F-MOS FET 2SK1266 2SK1266 Silicon N-channel Power F-MOS FET • Package Dimensions ■ Features • • • • Low ON resistance Rds on : RDs (on) l = 0.08il (typ.) High switching rate : tf= 180ns (typ.) No secondary breakdown For low voltage driving (VGs = 4V)


    OCR Scan     		PDF 2SK1266 180ns 2SKi266

    umi 150 5A 250V

    Abstract: umi 5A 250V 2SK1221 T0220AB X 25 UMI T0220A
    Text: 2SK1221 FUJI P O W ER M O S-F E T N-CMANNEL SILICON POWER MOS-FET F - II S E R I E S lOutline Drawings • Features • Hich speed sw itching • Low orvresistance • No secondary breakdown • Low driving power • Hiçh voltage • VC5s- ± 3 0V Guarantee


    OCR Scan     		PDF 2SK1221 T0220AB SC-46 umi 150 5A 250V umi 5A 250V 2SK1221 T0220AB X 25 UMI T0220A

    DIODE ku 1490

    Abstract: ku 1490 2SK129 2SK1292
    Text: M O S Field E ffe c t P o w e r T ra n s is to r 2SK1292 /< 7 -M O S FET I Ü 2SK1292 i, F E T T", X > h M ' <r7 — MOS • mm 5 ^ X 1&* > J i £ K t \ T - t , X ' f v f v y"#1î ^ firtT i - y, vu-y^K, 7 >7°i0ÆijfiHi-SjüT-fo m # o i& t y M f h r - t o


    OCR Scan     		PDF 2SK1292 DIODE ku 1490 ku 1490 2SK129 2SK1292

    2SK1249

    Abstract: F15W50 MOSFET 500V 15A
    Text: V X v'j- X /\°7-M 0SFET VX Series Power MOSFET 2SK1249 m n m -ta m C ase F15W50] o u t l i n e d im e n s io n s M T O -3P [Unit I mm] 500V 15A K È Z IÉ • A ^ iS M (C is s 2.0 !tflC -e 'D A '-< 7 X R fflA *g M Ô ^ J v ÿ lV , e X ^ ^ r y i^ A jK iS U o


    OCR Scan     		PDF 2SK1249 F15W50] 2SK1249 F15W50 MOSFET 500V 15A

    Nec AC 160

    Abstract: 2SK1286 MEI-1202 TEA-1035
    Text: DATA SHEET NEC A MOS FIELD EFFECT POWER TRANSISTOR 2SK1286 A SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK1286 is N-channel MOS Field Effect Transistor de­ PACKAGE DIMENSIONS in millimeters signed for solenoid, motor and lamp driver.


    OCR Scan     		PDF 2SK1286 2SK1286 IEI-1209) Nec AC 160 MEI-1202 TEA-1035

    2SK1274

    Abstract: No abstract text available
    Text: 5 *"ri DATA . •* t ïnSPî i «',_/; i<»'*'* . l t t, > MOS FIELD EFFECT TRANSISTOR 2SK1274 N-CHANIMEL MOS FET FOR HIGH SPEED SWITCHING PACKAGE DIMENSIONS Unit : mm The 2SK1274, N-channel vertical type MOS FET, is a switching device which can be driven directly by the output of ICs having a 5 V


    OCR Scan     		PDF 2SK1274 2SK1274, 2SK1274

    TRANSISTOR BH RW

    Abstract: k1272 fbii 2SK1272 s45l
    Text: • 5 /— h Field E ffe ct P o w e r T ra n sisto r 2SK 1272 ✓<l7 — M O S N 1 - ^ ^ V mJ m O S 2SK1272ÌÌ, FETT", 5 V « ì H S J C Æ tS i^ tlj^ 'n T H b Î c x 7 f > 7 • * < , -? , « Œ y i / Z j F, 4 IE » ? FET ¿> « H I W iim m ) X T 't .


    OCR Scan     		PDF 2SK1272 2SK1272Ì X108-01 TRANSISTOR BH RW k1272 fbii 2SK1272 s45l

    2SK1216

    Abstract: 3SK139 2SJ364 FETs Field Effect Transistors 3SK268 3SK269 3SK192 2SK1104 2SK374 3SK286
    Text: Field Effect Transistors • Silicon Junction FETs Absolute Maximum Ratings Ta =25 “CÍ Package (No. Application General-use low frequency amplifier SS Mini Type S Mini Type (D1) (D5) 2SJ0385 Mini Type (D10) 2SK198 2SK374 2SK123 Capacitor microphone APreliminary


    OCR Scan     		PDF 2SJ0385 2SJ364 2SK1103 2SJ163 2SK1104 2SJ164 2SK662 2SK663 2SK198 2SK374 2SK1216 3SK139 FETs Field Effect Transistors 3SK268 3SK269 3SK192 2SK374 3SK286