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    2SK125 Search Results

    2SK125 Result Highlights (2)

    Part ECAD Model Manufacturer Description Download Buy
    2SK1254STL-E Renesas Electronics Corporation Nch Single Power Mosfet 120V 3A 400Mohm DPAK(S)/To-252 Visit Renesas Electronics Corporation
    2SK1254L-E Renesas Electronics Corporation Nch Single Power Mosfet 120V 3A 400Mohm DPAK(L)-(1)/To-251 Visit Renesas Electronics Corporation
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    2SK125 Price and Stock

    ABB Low Voltage Products and Systems S802S-K125

    Mcb S800S 2P K 125A |Abb S802S-K125
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark S802S-K125 Bulk 1
    • 1 $691.76
    • 10 $646.4
    • 100 $563.24
    • 1000 $563.24
    • 10000 $563.24
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    Panasonic Electronic Components 2SK1257

    TRANSISTOR,MOSFET,N-CHANNEL,60V V(BR)DSS,40A I(D),SOT-186
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2SK1257 1,556
    • 1 $4.122
    • 10 $4.122
    • 100 $4.122
    • 1000 $2.061
    • 10000 $2.061
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    2SK1257 175
    • 1 $3.0915
    • 10 $3.0915
    • 100 $1.5458
    • 1000 $1.3397
    • 10000 $1.3397
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    Sony Batteries 2SK125

    TRANSISTOR
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2SK125 6
    • 1 $14.0625
    • 10 $12.5
    • 100 $12.5
    • 1000 $12.5
    • 10000 $12.5
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    Renesas Electronics Corporation 2SK1254STL-E

    Silicon N Channel MOS FET (Alt: 2SK1254STL-E)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Silica 2SK1254STL-E 22 Weeks 3,000
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    Hitachi Ltd 2SK1254(S)

    N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 20 W; Maximum Drain Current (Abs) (ID): 3 A; Maximum Pulsed Drain Current (IDM): 12 A;
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Vyrian 2SK1254(S) 465
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    2SK125 Datasheets (81)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK125 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SK125 Unknown Scan PDF
    2SK125 Unknown High Frequency Device Data Book (Japanese) Scan PDF
    2SK125 Unknown FET Data Book Scan PDF
    2SK125 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SK125 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2SK125 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SK125 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SK125 Sony Silicon N-Channel Junction FET Scan PDF
    2SK1250 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SK1250 Unknown FET Data Book Scan PDF
    2SK1250 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SK1250 Shindengen Electric Silicon Power Mosfet Data Book 1990 Scan PDF
    2SK1250 Shindengen Electric VX Series Power MOSFET Scan PDF
    2SK1251 Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF
    2SK1251 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SK1251 Unknown FET Data Book Scan PDF
    2SK1252 Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF
    2SK1252 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SK1252 Unknown FET Data Book Scan PDF

    2SK125 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Hitachi DSA002780

    Abstract: No abstract text available
    Text: 2SK1254 L , 2SK1254(S) Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • 4 V gate drive device  Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive


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    2SK1254 D-85622 Hitachi DSA002780 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK1259 Zener Diodes Composite Elements M A 4 Z 0 8 2 WA Silicon planer type ● SS-Mini type package 3-pin 1 wiring of MA8082 3 M Di ain sc te on na tin nc ue e/ d ● Anode-common Unit : mm 1.60±0.1 0.80±0.05 +0.05 • Features 0.80 0.28±0.05 1.60–0.03


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    2SK1259 MA8082 PDF

    2sk1259

    Abstract: MA4Z082WA MA8082
    Text: 2SK1259 Zener Diodes Composite Elements M A 4 Z 0 8 2 WA Silicon planer type 1 M Di ain sc te on na tin nc ue e/ d type package 3-pin wiring of MA8082 2 +0.05 0.60–0.03 +0.05 0.12–0.02 0.28±0.05 ● Anode-common 3 ue pl d in an c se ed lud pl vi an m m es


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    2SK1259 MA8082 2sk1259 MA4Z082WA MA8082 PDF

    MA196

    Abstract: "cathode indication"
    Text: 2SK1255 Switching Diodes MA196 Silicon epitaxial planer type Unit : mm For switching circuits f0.45 max. Small capacity between pins, Ct 1st Band 2nd Band • Absolute Maximum Ratings Ta= 25˚C Symbol Rating Unit Forward voltage (DC) VR 50 Repetitive peak reverse voltage


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    2SK1255 MA196 DO-34 cur03 30MHz MA196 "cathode indication" PDF

    Untitled

    Abstract: No abstract text available
    Text: Transistors IC SMD Type Type SMD Product specification 2SK1254S Features TO-252 Unit: mm Low on-resistance High speed switching +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 +0.1 2.30-0.1 +0.8 0.50-0.7 2.3 +0.1 0.60-0.1 3.80 +0.15 5.55-0.15 0.127 max +0.25


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    2SK1254S O-252 PDF

    2SK1254

    Abstract: Hitachi DSA00347
    Text: 2SK1254 L , 2SK1254(S) Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • 4 V gate drive device  Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive


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    2SK1254 Hitachi DSA00347 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK1255 Switching Diodes MA3X200F Silicon epitaxial planer type Unit : mm For switching circuits +0.2 2.8 –0.3 +0.25 0.65±0.15 1.5 –0.05 0.65±0.15 2 0.1 to 0.3 0.4±0.2 Rating Symbol Unit Reverse voltage DC VR 80 V Peak reverse voltage VRM 80 V Forward current (DC)


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    2SK1255 MA3X200F 100ns) 100mA PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK1255 Switching Diodes MA142WK Silicon epitaxial planer type Unit : mm For switching circuits 2.1±0.1 0.425 1.25±0.1 0.425 high-density mounting Small capacity between pins, Ct 2 • Absolute Maximum Ratings Ta= 25˚C Parameter Symbol Rating Unit Reverse voltage (DC)


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    2SK1255 MA142WK PDF

    2SK125

    Abstract: m2a marking
    Text: 2SK1259 Switching Diodes MA122 Silicon epitaxial planer type Unit : mm For switching circuits +0.2 2.8 –0.3 +0.25 4 3 +0.1 0 to 0.05 0.1 to 0.3 0.4±0.2 • Absolute Maximum Ratings Ta= 25˚C 1 : Cathode 1 4 : Cathode 3 2 : Cathode 2 5 : Cathode 4 3 : Anode 3, 4


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    2SK1259 MA122 2SK125 m2a marking PDF

    M1B marking

    Abstract: ma4s159
    Text: 2SK1259 Switching Diodes MA4S159 Silicon epitaxial planer type Unit : mm For switching circuits 2.1±0.1 1.25±0.1 • Features Small S-Mini type 4-pin package Åú Independent 2.0±0.1 1.3±0.1 ● incorporating of two elements, enabling high-density mounting


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    2SK1259 MA4S159 100mA M1B marking ma4s159 PDF

    M2D Package

    Abstract: M2D marking "Switching diode" 6pin 2SK125
    Text: 2SK1255 Switching Diodes MA6S121 Silicon epitaxial planer type Unit : mm For switching circuits 2.1±0.1 1.25±0.1 • Features 2.0±0.1 0.65 0.65 ● Small S-Mini type 6-pin package ● Three-element incorporated, enabling high-density mounting ● Flat lead type, with improved mounting efficiency and solderability


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    2SK1255 MA6S121 100mA M2D Package M2D marking "Switching diode" 6pin 2SK125 PDF

    2SK1254STL-E

    Abstract: 2SK1254L DATA SHEET 2SK1254 2SK1254L-E PRSS0004ZD-A PRSS0004ZD-C
    Text: 2SK1254 L , 2SK1254(S) Silicon N Channel MOS FET REJ03G0917-0200 (Previous: ADE-208-1255) Rev.2.00 Sep 07, 2005 Application High speed power switching Features • Low on-resistance • High speed switching • 4 V gate drive device  Can be driven from 5 V source


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    2SK1254 REJ03G0917-0200 ADE-208-1255) PRSS0004ZD-A PRSS0004ZD-C 2SK1254STL-E 2SK1254L DATA SHEET 2SK1254L-E PRSS0004ZD-A PRSS0004ZD-C PDF

    Hitachi DSA001651

    Abstract: No abstract text available
    Text: 2SK1254 L , 2SK1254(S) Silicon N-Channel MOS FET November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • 4 V gate drive device  Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive


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    2SK1254 D-85622 Hitachi DSA001651 PDF

    2SK125

    Abstract: 2SK1254
    Text: 2SK1254 L , 2SK1254 S Silicon N-Channel MOS FET Application DPAK-1 High speed power switching 4 4 Features • Low on-resistance • High speed switching • 4 V gate drive device – Can be driven from 5 V source • Suitable for motor drive, DC-DC converter,


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    2SK1254 2SK125 PDF

    2SK1250

    Abstract: No abstract text available
    Text: VXvU-X /\°7 -M 0 S F E T VX S eries Power MOSFET OUTLINE DIMENSIONS 2SK1250 Case MTO-3P [F20W50] 5.0 *<» 500V 20A 2 2 ±0-5 < 3 .3 J K llg l •A *S M [Unit ; m m ] a -y hÏS-5^ ffj — D a te codc (Ciss) on ^ Ö - 3 ' 2.Q *o-3 •K1250 E IA J No. "j9y?9-< Lhm ix


    OCR Scan
    2SK1250 F20W50] K1250 00QE53E F20W50) 2SK1250 PDF

    2sk1257

    Abstract: 20DRAM CRA-600
    Text: P ow er F-MOS FET 2S K 12 5 7 2SK1257 Silicon N-channel Power F-MOS FET • • • • • ■ P a c k a g e D im ensions F e a tu re s Low ON resistance Rt* on : Rj* (on) 1 = 0 .0 2 4 il (typ.) High switching ra te : 1, = 320ns (typ.) No secondary breakdown


    OCR Scan
    2SK1257 320ns 2sk1257 20DRAM CRA-600 PDF

    2SK1257

    Abstract: SS3200 TF320
    Text: P o w er F-MOS FET 2SK1257 2S K 1257 Silicon N-channel Power F-M O S F E T • Features ■ Package Dimensions • Low ON r esista n ce Rus on : R DS (on) l = 0 .0 2 4 il (typ.) Unit: mm • H igh sw itch in g r a te : t f= 3 2 0 n s (ty p .) • No s e c o n d a ry b reak d o w n


    OCR Scan
    2SK1257 024il 320ns Tc-25 i32flS2 2SK1257 SS3200 TF320 PDF

    2SK1258

    Abstract: 100-C SC-65 3010F
    Text: Power F-MOS FET 2SK1258 2SK1258 Silicon N-channel Power F-MOS FET Package Dimensions • Features • L o w O N r e s i s t a n c e R d s o n : R d s (o n ) 1 = 0 . 0 2 i l ( ty p .) Unit: mm • H ig h s w itc h in g r a t e : ti = 3 5 0 n s ( t y p . )


    OCR Scan
    2SK1258 350ns Packag10 DD171SD 100-C 2SK1258 100-C SC-65 3010F PDF

    Untitled

    Abstract: No abstract text available
    Text: m ^bEG S 2SK1253 □ O i a S b 'i M TT « H im S IL IC O N N -C H A N N E L M O S F E T HIGH SPEED POWER SWITCHING • FEATURES • Low On-Resistance • High Speed Switching • Low Drive Current • 4 V Gate Drive Device • — Can be driven from 5 V source


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    2SK1253 DG1327E PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK1254 L , 2SK1254(S) Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • 4 V gate drive device — Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive


    OCR Scan
    2SK1254 PDF

    HITACHI 2SK* TO-247

    Abstract: No abstract text available
    Text: 2SK1254 L , 2SK1254(S) Silicon N-Channel MOS FET HITACHI Application High speed power switching Features • Low on-resistance • High speed switching • 4 V gate drive device — Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive


    OCR Scan
    2SK1254 HITACHI 2SK* TO-247 PDF

    2sk1259

    Abstract: No abstract text available
    Text: Power F-MOS FET 2SK1259 • b*ì32flS4 oqusst ö43 «pncs. PANAS0N IC IN ] L /E L E K S E I1 I) b^E 2SK1259 ]> Silicon N-channel Power F-MOS FET Package Dimensions ■ Features • Low ON resistance R ds (on) : R ds (on) 1 = 0.01211 (typ.) • High switching rate : tf = 700ns (typ.)


    OCR Scan
    2SK1259 2SK1259 700ns PDF

    2SK2574

    Abstract: 2SK1259 2SK2377 2SK2659 2SK2578
    Text: • Power F-MOS FET Package Package No. 1Type (D44) N Type (D42) V gss Id (V) (V) (A) TO-220E (D59) 2SK1868 2SK1255 2SK2578 5 2SK2579 10 2SK1033 TOP-3F(a) (D63) V dss TC>-220F(a) (D55) 2SK1967 TOP-3(a) (D60) TOP-3E (D65) MT4 (D41) TOP-3L (D 67) 60 ATentative


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    2SK1868 -220F 2SK1255 O-220E 2SK2578 2SK2579 2SK1967 2SK2659 2SK1033 2SK2574 2SK2574 2SK1259 2SK2377 2SK2659 PDF

    FET 2SK125

    Abstract: 2SK125 2SK125 sony K125 1203C 120-3C BW 28
    Text: SONY» 2SK125 Micon N Channel Ju n ctio n F E T • UHF Amplifiers. Mixers Common Gate • PG : 12.5 d8 T yp . (f* 1 0 0 M H r. Common Gate) • NF: I.B d B T yp . (I - 100M H*, Common Gate) • 3rd Harmonic Distortion -5 2 dB T yp . • Analogue Switchings (R q n : * 0 ^ T y p .)


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    2SK125 1203C VOQ-10V. 500MHz. 12MHz FET 2SK125 2SK125 2SK125 sony K125 1203C 120-3C BW 28 PDF