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    2SK1646 Search Results

    2SK1646 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK1646 Sanyo Semiconductor For C to X-band Local Oscillator and Amplifier Original PDF
    2SK1646 Sanyo Semiconductor FET, N Channel, 0.5 VThreshold, ID 0.1 A Original PDF

    2SK1646 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SK1646

    Abstract: No abstract text available
    Text: Ordering number : ENN7546 2SK1646 N-Channel GaAs MESFET 2SK1646 For C to X-band Local Oscillator and Amplifier • • • • Package Dimensions Ideal for use in C to X-band local oscillator and amplifier. The chip surface is covered with the highly reliable


    Original
    PDF ENN7546 2SK1646 2SK1646] 2SK1646

    2SK1646

    Abstract: No abstract text available
    Text: No. 三洋半導体開発速報 2SK1646 暫定規格 NチャネルGaAsMES電界効果トランジスタ 用途 ・C~ Xバンド局部発振・増幅回路。 特徴 ・C∼ Xバンド局部発振用・増幅用として最適。 ・高信頼性保護膜採用。


    Original
    PDF 2SK1646 10mAf 12GHz 12GHz 2SK1646IDSS 990122TM2fXHD 2SK1646

    2SK1646

    Abstract: No abstract text available
    Text: Ordering number : ENN7546 2SK1646 N-Channel GaAs MESFET 2SK1646 For C to X-band Local Oscillator and Amplifier • • • • Package Dimensions Ideal for use in C to X-band local oscillator and amplifier. The chip surface is covered with the highly reliable


    Original
    PDF ENN7546 2SK1646 2SK1646] 2SK1646

    2SK1646

    Abstract: 05H45
    Text: Ordering number : ENN*0000 2SK1646 N-Channel Ga As MESFET 2SK1646 For C to X-band Local Oscillator and Amplifier Preliminary • • • • Package Dimensions Lower phase noise. Super miniaturized plastic-mold package CP4 . The chip surface is covered with the highly reliable


    Original
    PDF 2SK1646 2SK1646] 2SK1646 05H45

    microphone low-noise ti

    Abstract: 2SC1570NP 2SK1068 2SK1069 2SK1332 2SK1375 2SK1578 2SK1646 2sc3067 2SK2091
    Text: GaAs MESFETs Absolute maximum ratings Package type Device 2SK1646 . CP4 Applications Vos V Vgs (V) Id (mA) Electrical characteristics (Ta = 25 -C) loss @ Vds Pr (mW) 91 . loss (mA) NF @ Vds • I d lYfsl @ Vds • I ds Vds , (V) |Yfe| (mS) Vos


    OCR Scan
    PDF 2SK1646 SGF10 SGF12* SGF15 2SA1682 2SC4412 2SK333 2SA1415 2SC3645 7Ti707ti microphone low-noise ti 2SC1570NP 2SK1068 2SK1069 2SK1332 2SK1375 2SK1578 2sc3067 2SK2091

    3SK190

    Abstract: SGF19 2SC2814-2 2sk543 cross 2sc2078 2SK715
    Text: High Frequency Transistors Electrical characteristics Ta = 25 deg. C Absolute maximum ratings Device Package type Application lcao max @ Vcb VcBQ VCEO Vebo (V) (V) (V) , te (mA) Pc (mW) J o Icbo max m hFE @ Vce • Ic Vcb (V) h rc f i @ Vce • lc Vce Ip


    OCR Scan
    PDF 2SK1645* 2SK1646* SGF104 SGF11v SGF15* 3SK190 SGF19 2SC2814-2 2sk543 cross 2sc2078 2SK715

    sgf24

    Abstract: SGF12 cross mold sgf9 SGF23
    Text: SA0YO GaAs FET Series ,tJc, G a A s M E S F e a t u r e s + F E T S o r - i e s N-channel GaAs MES Field Effect Transistor Mold Package-Owing to the Cross Mold Technology, this product can maintain the same performance as the ceramic package. L o c a l ♦


    OCR Scan
    PDF SGF12 SGF23 SGF24 2SK1646 2SK1646, SGF23) WT940629TR sgf24 SGF12 cross mold sgf9 SGF23

    2SK1646

    Abstract: gaas fet marking D 55 marking gaas fet marking B SGF25
    Text: SAtfYO GaAs FET Series ¿ta G a A s M E S F E T S e r i e s Features N-channel GaAs HES Field Effect Transistor ♦ Hold Package-Owing to the Cross Mold Technology, this product can maintain the same performance as the ceramic package. ♦ Original manufacturing technology (adopting the protection film) achieved higher reliability.


    OCR Scan
    PDF SGF25 2SK1645 2SK1646 25X1645 SGF25) MI980624IR gaas fet marking D 55 marking gaas fet marking B

    KT931

    Abstract: SGF23
    Text: SAfiYO GaAs FET Series ote G a A s M ES F e a t u r e s F E X S e r i e s N-channel GaAs MES Field Effect Transistor + Hold Package-Owing to the Cross Hold Technology, this product can maintain the same performance as the ceramic package. ♦ Original manufacturing technology (adopting the protection film) achieved higher reliability.


    OCR Scan
    PDF 12GHz SGF10 SGF12 SGF15 SGF23 2SK1646 2SK1646 SGF23) KT931228IR KT931 SGF23

    d1684

    Abstract: C3788 c4217 d1047 c2078 C4161 D1651 D1682 k2043 K1460
    Text: Transistors Type Number SAftYO Index *:New products for FEB added. Type No. Package Page Type No. 2SA Typi T0220 2SA1011 NP Al 016,1 SPA A] 177 NP A 1207 MP Al 208 T0126 Al 209 A ’237 DP6A, B il A: 238 it A! 239 il Ax 240 NP A: 246 T0126 A: 248 h A. 249


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    PDF 2SA1520 A1522 A1523 A1524 A1525 A1526 A1527 A1528 A1536 A1537 d1684 C3788 c4217 d1047 c2078 C4161 D1651 D1682 k2043 K1460

    3SK190

    Abstract: vhf amplifier 2SC4870 SGF19 3SK189 2sc3925 2SC4858 2SC4859 2SC4865 2SC4866
    Text: Continued from previous page A bsolute m axim um ratings Device P ackage A pplication type VCBO CP4 2 S C 48 69 * CP4 UHF to S -band low-noise am plifier, oscilla tor V H F to UH F wideband low -noise a m plifier VHF to UH F wideband VCEO V (V) 2S C 48734


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    PDF 2SC4873* 2SC4869 2SC4865* 2SC4862* 2SC4858* 2SC4855* 3SK189 FC151 2SK16454 2SK1646* 3SK190 vhf amplifier 2SC4870 SGF19 2sc3925 2SC4858 2SC4859 2SC4865 2SC4866

    sma3001

    Abstract: SGF25
    Text: SA\YO New Microwave Device Product Line P D C for P H S f o r t e r m ¡ n a ! 1.9 G H z te r m in a / ( 8 0 0 M H z ) P PW e r A m p . w * S P F2 020 A ¡ li t *I fitter SPM2001A * S MA 3Q A nt . S. W 2SC5534 Low > B uffer Amo «SMA30QI Noi«e Amp. Pupi«»«''


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    PDF SPM2001A 2SC5534 SMA30QI SPM0103A SPM3202 20dBm SPM3205 SPM3252 24dBm sma3001 SGF25

    d1878

    Abstract: D1887 C4106 D1880 D1825 transistors D1878 c3987 C4161 D1651 k1459
    Text: Transistors Type Number SAVYO In dex *:New products for Type No. Package Page Type No. Package Page Type No. Package 2SA Type NP 2SA1016.il A1177 SPA AI207 NP A1208 MP A1209 T0126 A 1246 NP A 1248 T0126 il A1249 A 1252 CP A 1253 SPA A1256 CP il Al 257 A1258


    OCR Scan
    PDF A1527 A1528 A1537 A1540 A1573 A1574 A1575 A1580 A1590 A1607 d1878 D1887 C4106 D1880 D1825 transistors D1878 c3987 C4161 D1651 k1459