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Abstract: No abstract text available
Text: 2SK1871 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)60.0 V(BR)GSS (V)20.0 I(D) Max. (A)15.0 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)60.0 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)40.0 Minimum Operating Temp (øC)
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2SK1871
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Untitled
Abstract: No abstract text available
Text: • AP Series Lineup J-ll Series Existing type V qss = 60V, N-channei Absolute maximum ratings atTa =25°C Type No. Package voss Po* Vqss (V) 2SK1871 Electrical characteristics atTa = 25°C W (W) 15 Vq s (oH) nun to max %6<9R) typftnaxat V e s s H JV W iw*
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2SK1871
2SK1416
2SK1417
2SK1418
2SK1419
2SK1420
2SK1421
2SK1422
2SK1423
2SK1424
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2sk1885
Abstract: 2sj270 2SK1871 2SK1883 2sk2164 2SK2227 2SJ26
Text: SAfiYO POWER MOS FETs 1 The Sanyo J-MOS series utilizes Sanyo's own fine fabrication process for power devices to develop an entire series of ultrahigh performance power devices capable of high voltage, high speed and large current operation. With performance of wide applications for virtually any types of power electronic equipment, the UH Series, AP Series and
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2SJ272
2SJ273
T0-220ML
2SJ274
2SK1904
2SK1905
60m/80m
2SK1906
2SJ275
2SJ276
2sk1885
2sj270
2SK1871
2SK1883
2sk2164
2SK2227
2SJ26
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2SK1925
Abstract: No abstract text available
Text: Continued from previous page II Device Applications Voss m I Vg ss I m 1 2SK1737 2SK1738 to P|j A W (°C| Tell V g S(oH) w m RDSfon) @ Id •Vos SDSfon) max (a) to r I vgs I W « vos *to Vos (S) 00 ¡0 : <*> FLP Very high-speed switch 100 ±15 1.8 1.5
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2SK1737
2SK1738
T0220
2SK1921*
2SK2142*
2SJ254
0220M
2SK1925
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2sk2500
Abstract: UPC1037HA UPC648C 2SK927 NEC 2SK2500 uPD5201G UPA64HA UPD6360C 2SH24 n13t1
Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社
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C11178JJCV0IF0012
C11178JJCV0IF
MIL-HDBK-217
MILMIL10100
MIL-HDBK-217Fit
2sk2500
UPC1037HA
UPC648C
2SK927
NEC 2SK2500
uPD5201G
UPA64HA
UPD6360C
2SH24
n13t1
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IRF1830G
Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
Text: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23
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AO4405
AO4407
AO4408
AO4409
AO4410
AO4411
AO4413
AO4415
AO4422
AO4700
IRF1830G
IRF1830
transistor IRF1830G
APM2054N equivalent
apm2054n
AP85L02h
AP70N03S
2SK3683
ap70l02h
2SK2696
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transistor NEC 2SK2500
Abstract: NEC 2SK2500 2SK2500 N13T1 2SK2500 equivalent UPC1037HA UPC648C 2sh25 2sk2500 transistor 2SH24
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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MIL-HDBK-217
C11178EJCV0IF
transistor NEC 2SK2500
NEC 2SK2500
2SK2500
N13T1
2SK2500 equivalent
UPC1037HA
UPC648C
2sh25
2sk2500 transistor
2SH24
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2SK1731
Abstract: 2SK2637 2SK1871 2SK2626 2sk2636 2SK2438 2SK2153 2sk2406 2SK1474 2SK1920
Text: Continued from previous page Absolute maximum ratings Applications M VGSS Id V (A) (W) VDSS Electrical characteristics (Ta • 25 C ) RDSCmO @ ID PD Teh (1C) VGSS (off) (V) ID ■V6S ves (V) & |Yfs| 0 VDS ' ID slif Type Mo. Package type (A) 2SK1474 TP Ultrahigh-speed switching
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2SK1474
2SK1475
2SK1920
2SK2046
2SK2153
2SK2619V
2SK2626V
2SK2634V
2SK2164
2SK2321
2SK1731
2SK2637
2SK1871
2SK2626
2sk2636
2SK2438
2sk2406
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2sK1413
Abstract: T0220FI Vdss 1500V
Text: SAftYO POWER MOS F E T s 1 The Sanyo J-MOS series utilizes Sanyo’s own fine fabrication process for power devices to develop an entire series of ultrahigh performance power devices capable of high voltage, high speed and large current operation. With performance of wide applications for virtually any types of power electronic equipment, the UH Series, AP Series and
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2SK1416
2SK1417
2SK1418
2SK1419
2SK1420
2SK1421
2SK1871
2SK1422
2SK1423
2SK1424
2sK1413
T0220FI
Vdss 1500V
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Untitled
Abstract: No abstract text available
Text: SA/im POWER MOS F E T s 1 The Sanyo J-MOS series utilizes Sanyo's own fine fabrication process for power devices to develop an entire series of ultrahigh performance power devices capable of high voltage, high speed and large current operation. With performance of wide applications for virtually any types of power electronic equipment, the UH Series, AP Series and
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20m/26m
12m/16m
8m/12m
2SK1424
2SK1425
2SK1426
2SK1422
2SK1423
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TT2192
Abstract: sma4212 2SJ519 2sc5681 2SK1871 2SC5044 2SK3666 2sc6091 2SC5688 EC4K01KF
Text: Ordering number : E I 0 0 9 2 Announcement Regarding Discontinuation and Limited Availability of Discrete Devices Thank you for using SANYO semiconductor products. The following SANYO semiconductor products will be available to existing customers on a limited basis or discontinued.
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2SK1886
2SK4043LS
SB100-09K
TIG004SS
TIG030TS
2SC4493
2SK1887
SB10-18
TIG004T
TT2192
sma4212
2SJ519
2sc5681
2SK1871
2SC5044
2SK3666
2sc6091
2SC5688
EC4K01KF
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