2SK19 Search Results

2SK1928

Contextual Info: TOSHIBA 2SK1928 Field Effect Transistor Industrial Applications Unit in mm Silicon N Channel MOS Type rc-MOS II h iZ . High Speed, High Current Switching Applications Features • Low Drain-Source ON Resistance - RiD S (O N ) = 0.7Q [Typ.) • High Forward Transfer Admittance

2SK1904

Contextual Info: 2SK1904 LD L o w D rive S eries VDs s = 1 0 0 V 2063 N Channel Power M O SFET F e a tu re s • Low ON resistance. • Very high-speed switching. • Low-voltage drive. •M icaless package facilitatin g m ounting. A b so lu te M ax im u m R a tin g s a t T a = 25°C

Contextual Info: 2SK1920 AP Advanced Performance Series 20 83 A VDss —2 5 0 V 2092A N Channel Power M O S F E T F e a tu r e s • Low ON re sista n c e . • V ery high-sp eed sw itch in g . • Low -voltage d riv e. A b s o lu te M a x im u m R a tin g s a t T a = 25°C

Contextual Info: 2SK1936-01 N-channel MOS-FET FAP-IIA Series 500V > Features - 0,76Ω 10A 100W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators

Contextual Info: 2SK1983-01 N-channel MOS-FET FAP-IIA Series 900V > Features - 4Ω 3A 60W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators

d3s diode

Contextual Info: 2SK1906 LD L o w D rive S eries V D3S= 1 0 0 V 2063 N Channel Power M OSFET F e a tu re s • Low ON resistance. - Very high-speed switching. •Low-voltage drive. ■M icaless package facilitating mounting. A b s o lu te M ax im u m R a tin g s a t Ta = 25°C

AX-9832

Contextual Info: 2SK1921 AP A d va n ce d P e rfo rm a n c e Series V d 5s = 2 5 0 V N Channel Power M OSFET 4310 F eatures - Low ON resistance. • Very high-speed switching. • Low-voltage drive. bsolute M axim um R atings atTa=25°C Drain to Source Voltage V d ss

Contextual Info: 2SK1969-01 N-channel MOS-FET FAP-IIIA Series 60V > Features - 0,017Ω 50A 125W > Outline Drawing High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance Avalanche Proof Including G-S Zener-Diode > Applications

2SK1011

Abstract: 2SK1007-01 2SK1009-01 2SK1011-01 2SK1013-01 2SK1101-01M 2SK1221-01 2SK1222-01 2SK1917-01M 2sk1211
Contextual Info: COLLHER SEMICONDUCTOR INC b3E D • 523fl7^2 D0G1Ô71 SMI « C O L MOSFETs <§ FAP-II Series VGS ± 30V, High Avalanche Ruggedness, Reduced Turn-Off Time 500-1000 Volts ! ! I I Device Tvoe 2SK1221-01 2SK1917-01M 2SK1007-01 2SK1009-01 2SK1011-01 2SK1101-01M

2SK1917

Abstract: SiC POWER MOSFET 2SK1917-M ups electrical symbols A2266
Contextual Info: 2SK1917-M S IP M O S F U JI P O W E R M O S -F E T N-CHANNEL SILICON POWER MOS-FET ^ • Features SER IE S ■ Outline Drawings • High speed sw itching • Low o n-resistance • N o secondary breakdow n • Low driving p o w er • High voltage • Vc,s = ± 3 0 V G uarantee

k1930

Abstract: 2SK1930
Contextual Info: 2SK1930 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSII.5 2SK1930 Chopper Regulator, DC−DC Converter, and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 3.0 Ω (typ.) z High forward transfer admittance : |Yfs| = 2.0 S (typ.)

2SK0198

Abstract: 2SK198
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK0198 (2SK198) Silicon N-channel junction FET For low-frequency amplification • Package • High mutual conductance gm • Low-noise characteristics • Mini type package, allowing downsizing of the sets and automatic

mosfet 600v

Abstract: 2SK1941 2SK1941-01R
Contextual Info: 2SK1941-01R N-channel MOS-FET FAP-IIA Series 600V > Features - 0,55Ω 16A 100W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators

2SK1947

Contextual Info: 2SK1947 Silicon N Channel MOS FET Application TO–3PL High speed power switching Features • • • • • Low on–resistance High speed switching Low Drive Current Built–In Fast Recovery Diode trr = 140 ns Suitable for Switching regulator, Motor Control

K192a

Contextual Info: T O SH IB A 2SK192A TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2 S K19 2A Unit in mm FM TUNER APPLICATIONS VHF BAND AM PLIFIER APPLICATIONS High Power Gain : Gpg = 24dB Typ. (f = 100MHz) Low Noise Figure : NF=1.8dB (Typ.) (f=100MHz)

it412

Contextual Info: TO SHIBA 2SK1930 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M O SII 5 2 S K 1 930 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS IN D U S T R IA L A P P L IC A T IO N S TO-22QFL U n it in mm CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE

2SK1934

Contextual Info: 2SK1934 Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • No secondary breakdown • Suitable for Switching regulator Outline 2SK1934 Absolute Maximum Ratings Ta = 25 °C

Contextual Info: 2SK1980 Power F-MOS FETs 2SK1980 Silicon N-Channel Power F-MOS Unit : mm • Features ● Avalanche ● No 6.0±0.5 1.0±0.1 switching : tf= 25ns secondary breakdown 1.5±0.1 ● High-speed 3.4±0.3 8.5±0.2 VGSS=±30V guaranteed 10.0±0.3 ● energy capability guaranteed : EAS > 15mJ

Contextual Info: 2SK1942-01 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-IIA SERIES Outline Drawings Features High speed switching Low on-resistance No secondary breakdown Low driving power High voltage VGS=±30V Guarantee Avalanche-proof TO-3P Applications Switching regulators

Contextual Info: 2SK1981-01 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-IIA SERIES Outline Drawings Features High speed switching Low on-resistance No secondary breakdown Low driving power High voltage VGS=±30V Guarantee Avalanche-proof TO-220AB Applications Switching regulators

Contextual Info: F U JI 2SK1944-01 N-channel MOS-FET FAP-IIA Series 900V > Features - 2, 8 0 , 5A 10ÒW > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage V gs = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators

Contextual Info: FU JI a t a i E i r t e u e 2SK1945-01 L,S N-channel MOS-FET FAP-IIA Series 900V > Features - 2,8£2 5A 80W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage V g s = ± 30V Guarantee Avalanche Proof

a2297

Contextual Info: 2SK1944-01 FUJI POWER M O S-FET N-CHANNEL SILICON POWER MOS-FET - F A P - I I A • Features S E R I E S Outline Drawings • High speed switching • l ow on-resistanoe • I Jo secondary breakdown • l ow driving power

mosfet 500v

Contextual Info: F U JI 2SK1981-01 N-channel MOS-FET 500V 0,76Q 10A 80W FAP-IIA Series > Features - > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage V gs = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators