2SK1922
Abstract: No abstract text available
Text: Ordering number:EN4311 N-Channel Silicon MOSFET 2SK1922 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · High-speed diode trr=100ns . unit:mm 2052C [2SK1922] 10.2 3.6 4.5 5.1 18.0 15.1
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EN4311
2SK1922
100ns)
2052C
2SK1922]
O-220AB
2SK1922
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Untitled
Abstract: No abstract text available
Text: 2SK1922 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)600 V(BR)GSS (V)30 I(D) Max. (A)2.0 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)8.0 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)1.75 Minimum Operating Temp (øC)-55
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2SK1922
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2sk3436
Abstract: 2Sa1872 2sc6093 2SC4943 2sa1970 2SK3850 2SK1597 TT2084 2sc5267 2sk3744
Text: Ordering number : E I 0 1 3 8 Announcement Regarding Discontinuation and Limited Availability of Discrete Devices Thank you for using SANYO semiconductor products. The following SANYO semiconductor products will be available to existing customers on a limited basis
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TND023F
FX504
CPH5504
MCH5805
FX505
HPA72R
TND024F
FX506
MCH3301
TND024MP
2sk3436
2Sa1872
2sc6093
2SC4943
2sa1970
2SK3850
2SK1597
TT2084
2sc5267
2sk3744
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2sk3436
Abstract: 2sc6093 2Sa1872 2SK1597 2SK3850 2SC5269 TT2084 2SC4943 2SC5793 2sa1970
Text: 注文コード No. I 0 1 3 8 ディスクリートデバイス製品 保守品・廃止品に関するお知らせ いつも半導体製品をご使用いただきまして誠にありがとうございます。 このたび、下記三洋半導体製品を保守品または廃止品と致します。
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40610HKPC
TC-00002289
CPH5815
MCH5815
MCH6629
MCH6649
CPH6610
CPH6614
SCH1411
SCH1436
2sk3436
2sc6093
2Sa1872
2SK1597
2SK3850
2SC5269
TT2084
2SC4943
2SC5793
2sa1970
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431i
Abstract: No abstract text available
Text: 2SK1922 A P A dvanced Perform ance Series 2052B V dss = 600V N Channel Power M O S F E T E 431I F e a tu re s • Low ON resistance. • Very high-speed switching. • High-speed diode (trr= 100ns). A b so lu te M axim um R atin g s a tT a = 25°C D rain to Source Voltage
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2SK1922
2052B
100ns)
431i
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2SK1922
Abstract: diode gg 2a
Text: Ordering num ber:EN 4311 _ 2SK1922 No.4311 N -Channel MÖS Silicon FET Very High-Speed Switching Applications F e a tu r e s •Low ON resistance. • Very high-speed switching. • High-speed diode trr = 100ns . A b s o lu te M ax im u m R a tin g s a tT a = 25°C
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EN4311
2SK1922
100ns)
2SK1922
diode gg 2a
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2sk1885
Abstract: 2sj270 2SK1871 2SK1883 2sk2164 2SK2227 2SJ26
Text: SAfiYO POWER MOS FETs 1 The Sanyo J-MOS series utilizes Sanyo's own fine fabrication process for power devices to develop an entire series of ultrahigh performance power devices capable of high voltage, high speed and large current operation. With performance of wide applications for virtually any types of power electronic equipment, the UH Series, AP Series and
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2SJ272
2SJ273
T0-220ML
2SJ274
2SK1904
2SK1905
60m/80m
2SK1906
2SJ275
2SJ276
2sk1885
2sj270
2SK1871
2SK1883
2sk2164
2SK2227
2SJ26
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2SK1925
Abstract: No abstract text available
Text: Continued from previous page II Device Applications Voss m I Vg ss I m 1 2SK1737 2SK1738 to P|j A W (°C| Tell V g S(oH) w m RDSfon) @ Id •Vos SDSfon) max (a) to r I vgs I W « vos *to Vos (S) 00 ¡0 : <*> FLP Very high-speed switch 100 ±15 1.8 1.5
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2SK1737
2SK1738
T0220
2SK1921*
2SK2142*
2SJ254
0220M
2SK1925
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2SK2227
Abstract: No abstract text available
Text: Voss = 450V, N-channel m TP SM P « b 2SK2403 2SK2404 Electrical characteristics at Ta = 25°C f*OS en Package m 2SK2406 & I 1 i Typ« No. -2 T C 450 130 VGS{0ffj typ/max at min to max Vqs = 10V (Q) P# m m m m Ciss m typ (ns) 1.0 30 3.5/4.5 0.8 300 80 3.0
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2SK2406
2SK2403
2SK2404
2SK2405
2SK2407
O-220
2SK1922
2SK1923
2SK2227
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TO-32-070
Abstract: 2SA1678 FC102 2SC4449 2SA1416 2SJ193 2sk283 2sC4106 application notes 2SC3383 FC124
Text: Transistors with Built-in Resistors Absolute maximum ratings Device Package typ» Application te Vcso V Vceo Vebo (V) (V) (mA) Pc (mW) Electrical characteristics (T, = 25 deg. C) IcBQ max # Vc b Ti «les- Ci Ic b o max m hfE & Vce ic Vc b (V) hfH Vce (V)
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T0220ML
TO-32-070
2SA1678
FC102
2SC4449
2SA1416
2SJ193
2sk283
2sC4106 application notes
2SC3383
FC124
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2SJ32C
Abstract: 2SK14 2sk19 2SK2142 2sj320 2sj306 2SK142 2SK195 2SK2161
Text: SAtfm POWER MOS FETs 2 The Sanyo J-MOS series utilizes Sanyo's own fine fabrication process for power devices to develop an entire series of ultrahigh performance power devices capable of high voltage, high speed and large current operation. With performance of wide applications for virtually any types of power electronic equipment, the UH Series, AP Series and
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2SK19
2SK1923
T0-220
2SK1924
2SK2043LS
2SK2044LS
O-220FI
2SK2045LS
2SK19;
2SK1922
2SJ32C
2SK14
2SK2142
2sj320
2sj306
2SK142
2SK195
2SK2161
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700 v power transistor
Abstract: SB07
Text: p Discrete Devices for Video Cameras Complex Type Transistor + Schottky Barrier Diode Transistor Type Package No. FP101 Pc m PCP4 V C iO lc (V) (A) 25 2.0 v CE(sat) FP301 PCP4 2/100 1.1* 1.5/75 0.6 50 (V) 0.5 500 3.0 25 2.0 2/500 1.5/30 140 to 2/100 560
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FP101
2SB1121
SB05-05CP
2SB1396
SB07-03C
2SD1621
SB07-03C
FP102
FP301
250mm2
700 v power transistor
SB07
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NPN Transistor 600V SC-62
Abstract: 2SK2632 2SK1413 SANYO BIPOLAR transistor pcp SANYO SC-62 2SK1924 2SK2623 2SK1412LS 2SK1461 2SK1923
Text: Large-signal Power M0SFETs 5 The Sanyo J-MOS series u tiliz e s Sanyo’s own fine fabrication process for power devices to develop an entire series of ultrahigh performance power devices capable of high voltage, high speed and large current operation. With performance of wide applications for v irtu a lly any types of power electronic equipment, the UH Series, AP Series and
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form-126
T0-126LP
T0-220CI
T0-220ML
SC-67,
OT-186)
O-220FIÂ
SC-67KS0T-189}
T0-220MF
lsDwATT220>
NPN Transistor 600V SC-62
2SK2632
2SK1413
SANYO BIPOLAR transistor pcp
SANYO SC-62
2SK1924
2SK2623
2SK1412LS
2SK1461
2SK1923
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