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    2SK1923 Search Results

    2SK1923 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK1923 Sanyo Semiconductor N-Channel Silicon MOSFET Ultrahigh-Speed Switching Original PDF
    2SK1923 Sanyo Semiconductor N-Channel Silicon MOSFET Original PDF
    2SK1923 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SK1923 Sanyo Semiconductor Large Signal Power MOSFETS Scan PDF

    2SK1923 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 2SK1923 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)600 V(BR)GSS (V)30 I(D) Max. (A)4 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)16 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)1.75 Minimum Operating Temp (øC)-55


    Original
    PDF 2SK1923

    2SK1923

    Abstract: No abstract text available
    Text: Ordering number:EN4312 N-Channel Silicon MOSFET 2SK1923 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · High-speed diode trr=120ns . unit:mm 2052C [2SK1923] 10.2 3.6 4.5 5.1 18.0 15.1


    Original
    PDF EN4312 2SK1923 120ns) 2052C 2SK1923] O-220AB 2SK1923

    2sk3436

    Abstract: 2Sa1872 2sc6093 2SC4943 2sa1970 2SK3850 2SK1597 TT2084 2sc5267 2sk3744
    Text: Ordering number : E I 0 1 3 8 Announcement Regarding Discontinuation and Limited Availability of Discrete Devices Thank you for using SANYO semiconductor products. The following SANYO semiconductor products will be available to existing customers on a limited basis


    Original
    PDF TND023F FX504 CPH5504 MCH5805 FX505 HPA72R TND024F FX506 MCH3301 TND024MP 2sk3436 2Sa1872 2sc6093 2SC4943 2sa1970 2SK3850 2SK1597 TT2084 2sc5267 2sk3744

    2sk3436

    Abstract: 2sc6093 2Sa1872 2SK1597 2SK3850 2SC5269 TT2084 2SC4943 2SC5793 2sa1970
    Text: 注文コード No. I 0 1 3 8 ディスクリートデバイス製品 保守品・廃止品に関するお知らせ いつも半導体製品をご使用いただきまして誠にありがとうございます。 このたび、下記三洋半導体製品を保守品または廃止品と致します。


    Original
    PDF 40610HKPC TC-00002289 CPH5815 MCH5815 MCH6629 MCH6649 CPH6610 CPH6614 SCH1411 SCH1436 2sk3436 2sc6093 2Sa1872 2SK1597 2SK3850 2SC5269 TT2084 2SC4943 2SC5793 2sa1970

    2SK1411

    Abstract: 2SK1535 2SK1410 2SK1538 2SK1358 datasheet 2sk2082 2SK2397-01MR 2SK2475 2SK2370 2sk2225
    Text: STI Type: 2SK1358 Notes: Breakdown Voltage: 900 Continuous Current: 9 RDS on Ohm: 1.4 Trans Conductance Mhos: 2.0 Trans Conductance A: 4.0 Gate Threshold min: 1.5 Gate Threshold max: 3.5 Resistance Switching ton: 80 Resistance Switching toff: 200 Resistance Switching ID: 4.0


    Original
    PDF 2SK1358 O-247 2SK1359 2SK1362 2SK2563 2SK2568 2SK1411 2SK1535 2SK1410 2SK1538 2SK1358 datasheet 2sk2082 2SK2397-01MR 2SK2475 2SK2370 2sk2225

    C085

    Abstract: No abstract text available
    Text: 2SK1923 AP A d va n ce d P e rfo rm a n c e Series 2052B DSS = 6 0 0 V N Channel Power M OSFET £4312 F e a tu re s • Low ON resistance. • Very high-speed switching. • H igh-speed diode (trr = 120ns).


    OCR Scan
    PDF 2SK1923 2052B 120ns) VQQ-200V TCl-220AB 42693TH AX-9260 C085

    2052B

    Abstract: 2SK1923 24n700
    Text: Ordering num ber: E N 4 3 1 2 * 2SK1923 No.4312 N-Channel MOS Silicon FET Very High-Speed Switching Applications F eatu re s •Low ON resistance. • Very high-speed switching. • High-speed diode trr = 120ns . b so lu te M aximum R atings a tT a = 25°C


    OCR Scan
    PDF 2SK1923 120ns) 2052B 2SK1923 24n700

    2sk1885

    Abstract: 2sj270 2SK1871 2SK1883 2sk2164 2SK2227 2SJ26
    Text: SAfiYO POWER MOS FETs 1 The Sanyo J-MOS series utilizes Sanyo's own fine fabrication process for power devices to develop an entire series of ultrahigh performance power devices capable of high voltage, high speed and large current operation. With performance of wide applications for virtually any types of power electronic equipment, the UH Series, AP Series and


    OCR Scan
    PDF 2SJ272 2SJ273 T0-220ML 2SJ274 2SK1904 2SK1905 60m/80m 2SK1906 2SJ275 2SJ276 2sk1885 2sj270 2SK1871 2SK1883 2sk2164 2SK2227 2SJ26

    2SK1925

    Abstract: No abstract text available
    Text: Continued from previous page II Device Applications Voss m I Vg ss I m 1 2SK1737 2SK1738 to P|j A W (°C| Tell V g S(oH) w m RDSfon) @ Id •Vos SDSfon) max (a) to r I vgs I W « vos *to Vos (S) 00 ¡0 : <*> FLP Very high-speed switch 100 ±15 1.8 1.5


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    PDF 2SK1737 2SK1738 T0220 2SK1921* 2SK2142* 2SJ254 0220M 2SK1925

    2SK2227

    Abstract: No abstract text available
    Text: Voss = 450V, N-channel m TP SM P « b 2SK2403 2SK2404 Electrical characteristics at Ta = 25°C f*OS en Package m 2SK2406 & I 1 i Typ« No. -2 T C 450 130 VGS{0ffj typ/max at min to max Vqs = 10V (Q) P# m m m m Ciss m typ (ns) 1.0 30 3.5/4.5 0.8 300 80 3.0


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    PDF 2SK2406 2SK2403 2SK2404 2SK2405 2SK2407 O-220 2SK1922 2SK1923 2SK2227

    TO-32-070

    Abstract: 2SA1678 FC102 2SC4449 2SA1416 2SJ193 2sk283 2sC4106 application notes 2SC3383 FC124
    Text: Transistors with Built-in Resistors Absolute maximum ratings Device Package typ» Application te Vcso V Vceo Vebo (V) (V) (mA) Pc (mW) Electrical characteristics (T, = 25 deg. C) IcBQ max # Vc b Ti «les- Ci Ic b o max m hfE & Vce ic Vc b (V) hfH Vce (V)


    OCR Scan
    PDF T0220ML TO-32-070 2SA1678 FC102 2SC4449 2SA1416 2SJ193 2sk283 2sC4106 application notes 2SC3383 FC124

    2SJ32C

    Abstract: 2SK14 2sk19 2SK2142 2sj320 2sj306 2SK142 2SK195 2SK2161
    Text: SAtfm POWER MOS FETs 2 The Sanyo J-MOS series utilizes Sanyo's own fine fabrication process for power devices to develop an entire series of ultrahigh performance power devices capable of high voltage, high speed and large current operation. With performance of wide applications for virtually any types of power electronic equipment, the UH Series, AP Series and


    OCR Scan
    PDF 2SK19 2SK1923 T0-220 2SK1924 2SK2043LS 2SK2044LS O-220FI 2SK2045LS 2SK19; 2SK1922 2SJ32C 2SK14 2SK2142 2sj320 2sj306 2SK142 2SK195 2SK2161

    700 v power transistor

    Abstract: SB07
    Text: p Discrete Devices for Video Cameras Complex Type Transistor + Schottky Barrier Diode Transistor Type Package No. FP101 Pc m PCP4 V C iO lc (V) (A) 25 2.0 v CE(sat) FP301 PCP4 2/100 1.1* 1.5/75 0.6 50 (V) 0.5 500 3.0 25 2.0 2/500 1.5/30 140 to 2/100 560


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    PDF FP101 2SB1121 SB05-05CP 2SB1396 SB07-03C 2SD1621 SB07-03C FP102 FP301 250mm2 700 v power transistor SB07

    NPN Transistor 600V SC-62

    Abstract: 2SK2632 2SK1413 SANYO BIPOLAR transistor pcp SANYO SC-62 2SK1924 2SK2623 2SK1412LS 2SK1461 2SK1923
    Text: Large-signal Power M0SFETs 5 The Sanyo J-MOS series u tiliz e s Sanyo’s own fine fabrication process for power devices to develop an entire series of ultrahigh performance power devices capable of high voltage, high speed and large current operation. With performance of wide applications for v irtu a lly any types of power electronic equipment, the UH Series, AP Series and


    OCR Scan
    PDF form-126 T0-126LP T0-220CI T0-220ML SC-67, OT-186) O-220FIÂ SC-67KS0T-189} T0-220MF lsDwATT220> NPN Transistor 600V SC-62 2SK2632 2SK1413 SANYO BIPOLAR transistor pcp SANYO SC-62 2SK1924 2SK2623 2SK1412LS 2SK1461 2SK1923