K2162
Abstract: 2SJ338 2SK2162
Text: 2SK2162 東芝電界効果トランジスタ シリコンNチャネルMOS形 2SK2162 ○ 低周波電力増幅用 5.2 ± 0.2 : VDSS = 180 V 高順方向伝達アドミタンスです。 : |Yfs| = 0.7 S 標準 2SJ338 とコンプリメンタリになります。
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2SK2162
2SJ338
SC-64
K2162
2002/95/EC)
K2162
2SJ338
2SK2162
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toshiba audio power amplifier
Abstract: Audio Power Amplifier TOSHIBA 2SJ338 2SK2162
Text: 2SJ338 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ338 Audio Frequency Power Amplifier Application High breakdown voltage : VDSS = −180 V High forward transfer admittance : |Yfs| = 0.7 S typ. Unit: mm Complementary to 2SK2162 Maximum Ratings (Ta = 25°C)
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2SJ338
2SK2162
SC-64
toshiba audio power amplifier
Audio Power Amplifier TOSHIBA
2SJ338
2SK2162
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MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR
Abstract: Toshiba 2SJ toshiba marking code transistor
Text: 2SK2162 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type 2SK2162 Audio-Frequency Power Amplifier Applications • High breakdown voltage: VDSS = 180 V • High forward transfer admittance: |Yfs| = 0.7 S typ. • Complementary to 2SJ338 Unit: mm
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2SK2162
2SJ338
MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR
Toshiba 2SJ
toshiba marking code transistor
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2SJ338
Abstract: 2SK2162 K2162
Text: 2SK2162 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type 2SK2162 Audio-Frequency Power Amplifier Applications 5.2 ± 0.2 High breakdown voltage: VDSS = 180 V • High forward transfer admittance: |Yfs| = 0.7 S typ. • Complementary to 2SJ338 Drain-source voltage
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2SK2162
2SJ338
2SJ338
2SK2162
K2162
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2SJ338
Abstract: 2SK2162 J338 Toshiba 2SJ toshiba marking code transistor
Text: 2SJ338 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type 2SJ338 Audio-Frequency Power Amplifier Applications z High breakdown voltage : VDSS = −180 V z High forward transfer admittance : |Yfs| = 0.7 S typ. Unit: mm z Complementary to 2SK2162 Absolute Maximum Ratings (Ta = 25°C)
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2SJ338
2SK2162
2SJ338
2SK2162
J338
Toshiba 2SJ
toshiba marking code transistor
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Untitled
Abstract: No abstract text available
Text: 2SK2162 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type 2SK2162 Audio-Frequency Power Amplifier Applications 5.2 ± 0.2 High breakdown voltage: VDSS = 180 V • High forward transfer admittance: |Yfs| = 0.7 S typ. • Complementary to 2SJ338 Drain-source voltage
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2SK2162
2SJ338
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toshiba audio power amplifier
Abstract: K2162 toshiba Ta 2SJ338 2SK2162 K2-16 Toshiba 2SJ
Text: 2SK2162 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK2162 Audio Frequency Power Amplifier Applications Unit: mm • High breakdown voltage: VDSS = 180 V • High forward transfer admittance: |Yfs| = 0.7 S typ. • Complementary to 2SJ338
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2SK2162
2SJ338
SC-64
toshiba audio power amplifier
K2162
toshiba Ta
2SJ338
2SK2162
K2-16
Toshiba 2SJ
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Toshiba 2SJ
Abstract: toshiba marking code transistor 2-7J1B
Text: 2SJ338 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type 2SJ338 Audio-Frequency Power Amplifier Applications z High breakdown voltage : VDSS = −180 V z High forward transfer admittance : |Yfs| = 0.7 S typ. Unit: mm z Complementary to 2SK2162 Absolute Maximum Ratings (Ta = 25°C)
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2SJ338
2SK2162
Toshiba 2SJ
toshiba marking code transistor
2-7J1B
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MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR
Abstract: 2SJ338 2SK2162 K2162 Toshiba 2SJ toshiba marking code transistor
Text: 2SK2162 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type 2SK2162 Audio-Frequency Power Amplifier Applications • High breakdown voltage: VDSS = 180 V • High forward transfer admittance: |Yfs| = 0.7 S typ. • Complementary to 2SJ338 Unit: mm
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2SK2162
2SJ338
MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR
2SJ338
2SK2162
K2162
Toshiba 2SJ
toshiba marking code transistor
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2SJ338
Abstract: 2SK2162 Toshiba 2SJ
Text: 2SJ338 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ338 Audio Frequency Power Amplifier Application l High breakdown voltage : VDSS = −180 V l High forward transfer admittance : |Yfs| = 0.7 S typ. Unit: mm l Complementary to 2SK2162 Maximum Ratings (Ta = 25°C)
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2SJ338
2SK2162
SC-64
2SJ338
2SK2162
Toshiba 2SJ
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2SJ338
Abstract: 2SK2162 J338
Text: 2SJ338 東芝電界効果トランジスタ シリコンPチャネルMOS形 2SJ338 単位: mm ○ 低周波電力増幅用 1.7 ± 0.2 6.8 MAX. z 高順方向伝達アドミタンスです。 : |Yfs| = 0.7S 標準 z 2SK2162 とコンプリメンタリになります。
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2SJ338
-180V
2SK2162
SC-64
2002/95/EC)
2SJ338
2SK2162
J338
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J338
Abstract: Toshiba 2SJ
Text: 2SJ338 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type 2SJ338 Audio-Frequency Power Amplifier Applications High breakdown voltage : VDSS = −180 V High forward transfer admittance : |Yfs| = 0.7 S typ. Unit: mm Complementary to 2SK2162 Maximum Ratings (Ta = 25°C)
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2SJ338
2SK2162
SC-64
J338
Toshiba 2SJ
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MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR
Abstract: Toshiba 2SJ 2sk2162
Text: 2SK2162 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type 2SK2162 Audio-Frequency Power Amplifier Applications Unit: mm • High breakdown voltage: VDSS = 180 V • High forward transfer admittance: |Yfs| = 0.7 S typ. • Complementary to 2SJ338
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2SK2162
2SJ338
SC-64
MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR
Toshiba 2SJ
2sk2162
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J338
Abstract: 2SK2162 2SJ338 Toshiba 2SJ
Text: 2SJ338 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ338 Audio Frequency Power Amplifier Application High breakdown voltage : VDSS = −180 V High forward transfer admittance : |Yfs| = 0.7 S typ. Unit: mm Complementary to 2SK2162 Maximum Ratings (Ta = 25°C)
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2SJ338
2SK2162
SC-64
J338
2SK2162
2SJ338
Toshiba 2SJ
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2SK2056
Abstract: 2SK1603 2sk1603 datasheet TOSHIBA "ULTRA HIGH SPEED" DIODE 1A transistor 2SK1603 2SK3561 equivalent 2SK2915 EQUIVALENT 1045y 2SK3569 equivalent 2SK1078
Text: O W Y.C M.T .1 O W C W 2005-3 WW .100Y. M.T O W WW .100Y.C M.TW .TW M WW 00Y.CO .TW .CO .TW Y W M .1 W.1 Y.COM W WW 00Y.CO .TW W W W .T 00 W.1 Y.COM W W.1 Y.COM W W W W .T W 00 W M.T .100 W.1 Y.COM W M.T O W O W C . .C W WW .100Y .TW M.T .100 .TW 00Y M O 1
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BCE0017B
2SK2056
2SK1603
2sk1603 datasheet
TOSHIBA "ULTRA HIGH SPEED" DIODE 1A
transistor 2SK1603
2SK3561 equivalent
2SK2915 EQUIVALENT
1045y
2SK3569 equivalent
2SK1078
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2SK3567 equivalent
Abstract: 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603
Text: 2008-9 PRODUCT GUIDE Power MOSFETs s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Toshiba’s power MOSFET devices meet the needs of a wide range of ultra-high-density applications. 1.Features and Structure. 2
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BCE0017F
E-28831
BCE0017G
2SK3567 equivalent
2SK3569 equivalent
TPCA*8023
TK8A50D equivalent
2SK2056
2SK3878 equivalent
tpca8023
2SK941 equivalent
2SK3561 equivalent
2SK1603
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SK2162 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2 S K 2 1 62 AUDIO FREQUENCY POWER AMPLIFIER APPLICATION • • • INDUSTRIAL APPLICATIONS Unit in mm High Breakdown Voltage : V j gg= 180V High Forward Transfer Admittance : |Yfs|=0.7S Typ.)
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OCR Scan
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2SK2162
2SJ338
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toshiba Ta
Abstract: 2SJ338 2SK2162
Text: TOSHIBA 2SK2162 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2 S K 2 1 62 AUDIO FREQUENCY POWER AMPLIFIER APPLICATION • High Breakdown Voltage • High Forward Transfer Admittance : |Yfs| = 0.7 S Typ. • Complementary to 2SJ338 INDUSTRIAL APPLICATIONS
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OCR Scan
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2SK2162
2SJ338
K2162
toshiba Ta
2SJ338
2SK2162
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Untitled
Abstract: No abstract text available
Text: T O SH IB A 2SK2162 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2S K 2 162 AUDIO FREQUENCY POWER AMPLIFIER APPLICATION INDUSTRIAL APPLICATIONS Unit in mm — 1 Q A \Í T L»öö_ i v v Y • H igh Forw ard T ra n sfer A dm ittan ce : |Yfs | = 0 .7 S Typ.
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2SK2162
2SJ338
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2SJ338
Abstract: 2SK2162
Text: TO SH IBA 2SK2162 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2 S K 2 1 62 AUDIO FREQUENCY POWER AMPLIFIER APPLICATION • High Breakdown Voltage : Vßgg = 180 V • High Forward Transfer Admittance : |Yfs| = 0.7 S Typ. • Complementary to 2SJ338
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OCR Scan
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PDF
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2SK2162
2SJ338
2SJ338
2SK2162
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SK2162 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2 S K 2 1 62 AUDIO FREQUENCY POWER AMPLIFIER APPLICATION • • • INDUSTRIAL APPLICATIONS Unit in mm High Breakdown Voltage : V j gg= 180V High Forward Transfer Admittance : |Yfs|=0.7S Typ.)
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OCR Scan
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2SK2162
2SJ338
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ke marking transistor
Abstract: TRANSISTOR rty marking IAY 2SJ338 2SK2162
Text: TOSHIBA 2SK2162 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2 S K 2 1 62 AUDIO FREQUENCY POWER AMPLIFIER APPLICATION • • • INDUSTRIAL APPLICATIONS Unit in mm High Breakdown Voltage : Vj gs = 180V High Forward Transfer Admittance : |Yfs| = 0.7S Typ.)
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OCR Scan
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2SK2162
2SJ338
ke marking transistor
TRANSISTOR rty
marking IAY
2SK2162
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toshiba lot number type
Abstract: 2SJ338 2SK2162 Toshiba 2SJ
Text: TOSHIBA 2SJ338 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE 2SJ338 AUDIO FREQUENCY PO W ER AM PLIFIER APPLICATION • • • INDUSTRIAL APPLICATIONS Unit in mm High Breakdown Voltage : VDgg= —180V High Forward Transfer Admittance : |Yfs| = 0.7S Typ.
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2SJ338
2SK2162
SC-64
-10mA,
-10mA
toshiba lot number type
Toshiba 2SJ
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SJ338 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE 2SJ 338 AUDIO FREQUENCY PO W ER AM PLIFIER APPLICATION • • • INDUSTRIAL APPLICATIONS Unit in mm High Breakdown Voltage : V;ogg= —180V High Forward Transfer Admittance : |Yfs| = 0.7S Typ.
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2SJ338
2SK2162
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