2SK244
Abstract: 49842 2SK2441 25K24
Text: Ordering number: EN 4984A 2SK2441 N-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications Features •Low ON resistance. ■Ultrahigh-speed switching. • 2.5V drive. A bsolute M axim um R atings at Ta = 25°C Drain-to-Source Voltage V dss Gate-to-Source Voltage
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EN4984A
2SK2441
1000mm2
2SK244
49842
25K24
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2SK244
Abstract: 2sk2441 TA-0198
Text: ng num ber: EN4984A 2SK2441 N0.4984A N-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications Features • Low ON resistance. • Ultrahigh-speed switching. • 2.5V drive. Absolute Maximum Ratings at Ta=25°C Drain-to-Source Voltage Vdss Gate-to-Source Voltage
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EN4984A
2SK2441
1000mm2
72297TS
/42895MO
TA-0198
2SK244
2sk2441
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2sk2441
Abstract: TA-0198
Text: Ordering number:ENN4984A N-Channel Silicon MOSFET 2SK2441 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · 2.5V drive. unit:mm 2116 [2SK2441] 5 4 1.27 0.595 Specifications 0.43 0.1 1.5
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ENN4984A
2SK2441
2SK2441]
2sk2441
TA-0198
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mosfet cross reference
Abstract: Power MOSFET Cross Reference Guide 2SK2146 Cross Reference power MOSFET SUP60NO6-18 MOSFET TOSHIBA 2SK irf510 Motorola SUP70NO6 STP16NEO6 IRF540 substitution
Text: TMOS Power MOSFET Cross Reference This Cross reference lists MOSFETs by either industry standard part number or by manufacturer's part number for which there is a Motorola nearest or similar replacement. For devices not listed, or for additional information, contact the nearest Motorola Franchised Distributor or your local
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IRF 850 mosfet
Abstract: Mini size of Discrete semiconductor elements 2SJ335 cp 035 sanyo CP 022 ND fa214 8ROM 2SK2637 marking 85m ok 2SJ382
Text: Medium Output Power MOSFETs l N ew P a d o - g e : T S S O P 8 *0ne size sm aller than S0P8. Best su ited fo r higher performance and effic ie n c y of battery-pow ered equipment and av ailab le fo r h igh-density surface mount. S O P S ^Reduced surface mount area by 502 and thickness by 30Z over the SC-63(TP).package.
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SC-63
T0-126LP
T0-220CI
T0-220ML
SC-67,
OT-186)
O-220FIÂ
SC-67KS0T-189}
T0-220MF
lsDwATT220>
IRF 850 mosfet
Mini size of Discrete semiconductor elements
2SJ335
cp 035 sanyo
CP 022 ND
fa214
8ROM
2SK2637
marking 85m ok
2SJ382
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IRF9310
Abstract: mosfet cross reference korea IRFZ44 IRF 949 replacement BUZ 36 philips master replacement guide 2SK2146 IRF540 substitution MOSFET TOSHIBA 2SK IRF510 substitution
Text: TMOS Power MOSFET Cross Reference This Cross Reference lists MOSFETs by either industry standard part number or by manufacturer’s part number for which there is an ON Semiconductor nearest or similar replacement. For devices not listed, or for additional
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device2176
r14153
CR108/D
IRF9310
mosfet cross reference
korea IRFZ44
IRF 949
replacement BUZ 36
philips master replacement guide
2SK2146
IRF540 substitution
MOSFET TOSHIBA 2SK
IRF510 substitution
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2SJ437
Abstract: 2SK244
Text: il ucakon Examples lUsing a Schotfky Barner diode AC a d a p te r Using a power MOSFET) ; •>- - ■►! — ■-* A C a d a p te r o u tp u t o - o u tp u t Battery Battery ■ Device Lineup ♦ Schottky Barrier Diodes Package SB20W03P PCP SB40W03T TP-FA
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SB20W03P
SB40W03T
SBA100-04ZP
SBA160-Q4ZP
SBA50-04Y
SBA10Q-04Y
SBA160-04Y
characteristicsSJ466
2SJ437
2SJ257
2SK244
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2SK2637
Abstract: No abstract text available
Text: • LD Series Lineup Type No. Package V OSS * * - V (V) *0 o Pd m Electrical characteristics at Ta = 25°C « tm » 'iifflP. Absolute maximum 1 VDss = 12 V, P-channel m Vostofl) min to max M 2SJ316 2SJ335 1.0 ±15 PCP ±10 XP5 FX601 XP6 ±15 Vg s = 4V VfigstOV
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2SJ316
2SJ335
2SJ381
FX207
FX601
2SJ336
2SJ337
2SJ382
2SJ383
2SJ419
2SK2637
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FW201
Abstract: 2SJ469
Text: il- i •*'iti i -*•» ■ Overview ^R H p r Currently, portable information equipment such as notebook computers, video cam eras and portable telephones are rapidly o e c e r ig more compact and lightweight. In particular, iarge-capacity, high-performance battery-pack supplies nave become essential. S A N Y O -;as
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2SK2557
FW103
FW201
FW202
FW203
40/58T
115/165T
1000mm2
2SJ419
2SJ468
2SJ469
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2sk3436
Abstract: 2Sa1872 2sc6093 2SC4943 2sa1970 2SK3850 2SK1597 TT2084 2sc5267 2sk3744
Text: Ordering number : E I 0 1 3 8 Announcement Regarding Discontinuation and Limited Availability of Discrete Devices Thank you for using SANYO semiconductor products. The following SANYO semiconductor products will be available to existing customers on a limited basis
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TND023F
FX504
CPH5504
MCH5805
FX505
HPA72R
TND024F
FX506
MCH3301
TND024MP
2sk3436
2Sa1872
2sc6093
2SC4943
2sa1970
2SK3850
2SK1597
TT2084
2sc5267
2sk3744
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Si9947DY
Abstract: No abstract text available
Text: SINGLE & DUAL N & P CHANNEL MOSFETS XP13x SERIES, SOP-8 PACKAGE • LOW ON RESISTANCE, HIGH SPEED SWITCHING AND LOW POWER CONSUMPTION • OPERATING VOLTAGES FROM 1.5V TO 4.5V SINGLE N & P CHANNEL MOSFETS TA = 25˚C • • • • • • • • • • • New Product
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XP13x
XP131A0232SR
XP131A1330SR
XP131A0616SR
XP131A1715SR
XP131A1235SR
XP131A1617SR
XP131A0150SR
XP131A1145SR
XP131A0526SR
Si9947DY
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YTA630
Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509
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2N7000
2N7002
2SJ377
2SJ378
2SJ380
2SJ401
2SJ402
2SJ407
2SJ412
2SJ419
YTA630
MTW14P20
BSS125
MTAJ30N06HD
2SK2837 equivalent
SMU10P05
SMP60N06 replacement
STE180N10
RFH75N05E
IRFD620
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2SK1731
Abstract: 2SK2637 2SK1871 2SK2626 2sk2636 2SK2438 2SK2153 2sk2406 2SK1474 2SK1920
Text: Continued from previous page Absolute maximum ratings Applications M VGSS Id V (A) (W) VDSS Electrical characteristics (Ta • 25 C ) RDSCmO @ ID PD Teh (1C) VGSS (off) (V) ID ■V6S ves (V) & |Yfs| 0 VDS ' ID slif Type Mo. Package type (A) 2SK1474 TP Ultrahigh-speed switching
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2SK1474
2SK1475
2SK1920
2SK2046
2SK2153
2SK2619V
2SK2626V
2SK2634V
2SK2164
2SK2321
2SK1731
2SK2637
2SK1871
2SK2626
2sk2636
2SK2438
2sk2406
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Untitled
Abstract: No abstract text available
Text: • Overview Currently, battery-operated portable equipment sucn as notebook computers, portable telephones, video cameras n office a ./'j :v -■ equipment and AV equipment are becoming increasingly common. Accordingly, many devices are required witn low-voltage C" ve:- ar 3
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2SJ381
FX207
2SJ382
2SJ383
2SJ419
2SJ420
FW101
2SK2316
FX208
2SK2317
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2SK2153
Abstract: 2SJ332S
Text: • Device Lineup ♦ 2.5V-Drive Power MOSFETs Absolute maximum ratings Ta = 25DC Type No, Package 2SJ381 PCP 2SJ382 TP-FA 2SJ383 2SJ419 2SK2317 2SK2318 FW201 ±10 2 ±12 r r rD (W) lytsi typ Ciss typ (S) (pF) 3.5 400/700 280/400 2.4 170 240/380 155/220 ^
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2SJ381
2SJ382
2SJ383
2SJ419
2SJ42Q
2SK2316
2SK2317
2SK2318
2SK2440
2SK2441
2SK2153
2SJ332S
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