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    2SK2460N Search Results

    2SK2460N Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK2460N ROHM Switching (250V, 5A) Original PDF

    2SK2460N Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2SK2460N

    Abstract: mosfet 115 MOSFET mosfet 5a transistor 115 2SK2460
    Text: Transistors Switching 250V, 5A 2SK2460N FFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage guaranteed at VGSS = ±30V. 5) Easily designed drive circuits. 6) Easy to parallel. FStructure Silicon N-channel


    Original
    2SK2460N 2SK2460N mosfet 115 MOSFET mosfet 5a transistor 115 2SK2460 PDF

    rkm 21 transistor

    Abstract: RK7002 equivalent 2SK3016 rkm sot-23 rkm transistor sot23 a02 Transistor rkm 45 transistor 2SK2460 rkm 15 transistor RKM SOT
    Text: IN- Transistors n MOS FET 1. Can be used with automatic placement machine. AvarIable In a wade variety o f p a c k a g e s . L i k e b i p o l a r transrstors, taprng versron placement system. IS a l s o available for lines using the automatic 2. MOS FETs operating from 4 volts


    Original
    2SK2792 2SK2503 RK7002 rkm 21 transistor RK7002 equivalent 2SK3016 rkm sot-23 rkm transistor sot23 a02 Transistor rkm 45 transistor 2SK2460 rkm 15 transistor RKM SOT PDF

    2SK2460N

    Abstract: mosfet ftr 03 251C SC-75A mosfet 2sk* to-92
    Text: Transistors Switching 250V, 5A 2SK2460N •F e a tu re s •E x te rn a l dimensions (Units: mm) 1 ) Low on-resistance. 2) -, +0.3 High-speed switching. 3 - 0.1 e+0.3 *—0.1 3) Wide SOA (safe operating area). Ö+0.2 4) Gate-source voltage guaranteed at V gss = ± 3 0 V .


    OCR Scan
    2SK2460N T0-22Ã O-220FP O-220 O-126 O-220, 0Dlb713 O-220FN 2SK2460N mosfet ftr 03 251C SC-75A mosfet 2sk* to-92 PDF

    2SK2460N

    Abstract: 2SK2460 251C Ol05
    Text: Transistors Switching 250V, 5A 2SK2460N •E x te rn a l dim ensions (Units: mm) 9 Features 1 ) Low on-resistance. 2) High-speed switching. 3) W ide SOA (safe operating area). 4) G a te -so u rce v o lta g e g u ara ntee d at V gss = ± 3 0 V . 5) Easily designed drive circuits.


    OCR Scan
    2SK2460N O-220FN 2SK2460N 2SK2460 251C Ol05 PDF

    2SK2540

    Abstract: 2SD2576 2sd2396 TA143E 2SK2459N 2SD 92 M C2N3904 2SB1569A 2SD2061 2SD1189F
    Text: Transistors/^ Leaded Type Quick Reference MOS FET V d ss V 60 100 200 250 300 450 500 600 800 Page b (A) 2 2SK2262 (MRT) 2SK2294 (TO -220FN ) 3 2SK2792 (T 0 -2 2 0 F N ) 4 2SK2459N (TO -220FN ) 5 2SK2460N (T 0-220FN ) 2SK2713 (T 0 -2 2 0 F N ) 2SK2793 (T 0 -2 2 0 F N )


    OCR Scan
    2SK2262 2SK2294 -220FN 2SK2792 2SK2459N 2SK2460N 0-220FN 2SK2713 2SK2793 2SK2540 2SD2576 2sd2396 TA143E 2SK2459N 2SD 92 M C2N3904 2SB1569A 2SD2061 2SD1189F PDF

    Untitled

    Abstract: No abstract text available
    Text: Transistors Switching 250V, 5A 2SK2460N •Features 1 ) Low on-resistance. 2) High-speed switching. 3) Wide S O A (safe operating area). 4) Gate-source voltage guaranteed at V g s s = ±3 0 V . 5) Easily designed drive circuits. 6) Easy to use in paraliel.


    OCR Scan
    2SK2460N -220FN PDF

    2SK2460N

    Abstract: No abstract text available
    Text: Transistors Switching 250V, 5A 2SK2460N • F e a tu re s 1) • E x t e r n a l d im e n s io n s (U nits: m m ) Low on-resi stance. 2) H ig h -s p e e d sw itch in g . 3) W id e S O A (safe o p e ra tin g area). 4 ) G a te -s o u rc e v o lta g e g u a ra n te e d


    OCR Scan
    2SK2460N 2SK2460N PDF

    2n4401 331

    Abstract: 2n4403 331 2n3904 409 2n3904 331 k 2715 2n3906 331 1352s MPSA06 346 2N584 C847B
    Text: Transistors Product List Product List 2N3904 . 614 2S B 2N3906 . 598


    OCR Scan
    2N3904 2N3906 2N4401 2N4403 2SA821S. 2SA830S. 2SA854S. 2SB822 2n4401 331 2n4403 331 2n3904 409 2n3904 331 k 2715 2n3906 331 1352s MPSA06 346 2N584 C847B PDF

    2SK2540

    Abstract: 2SK2294
    Text: Transistors/Leaded Type Characteristics MOS FET 1. Can be used with automatic placement machines. Available in various packages with taping for automatic placement. 2. MOS FETs operating from 4 volts These MOS FETs can be driven directly by an IC, significantly reducing the number of components buffer transistors .


    OCR Scan
    2SK2792 130ns 2SK2262 T0-220FN O-220FN 2SK2540 2SK2294 PDF