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    2SK247 Search Results

    2SK247 Result Highlights (4)

    Part ECAD Model Manufacturer Description Download Buy
    2SK2477-A Renesas Electronics Corporation Silicon N Channel MOSFET Visit Renesas Electronics Corporation
    2SK2478-AZ Renesas Electronics Corporation Switching N-Channel Power Mosfet Visit Renesas Electronics Corporation
    2SK2479-AZ Renesas Electronics Corporation Switching N-Channel Power Mosfet Visit Renesas Electronics Corporation
    2SK2476-AZ Renesas Electronics Corporation Silicon N Channel MOSFET Visit Renesas Electronics Corporation
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    2SK247 Price and Stock

    Renesas Electronics Corporation 2SK2479

    N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 70 W; No. of Terminals: 3; Package Shape: RECTANGULAR;
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    Vyrian 2SK2479 298
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    Renesas Electronics Corporation 2SK2477

    N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 150 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Transistor Application: SWITCHING;
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Vyrian 2SK2477 214
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    2SK247 Datasheets (28)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK247 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SK247 Unknown FET Data Book Scan PDF
    2SK247 Panasonic Si N-channel junction. Wide-band, low-noise amplifier. Scan PDF
    2SK2470-01MR Fuji Electric N-channel MOS-FET Original PDF
    2SK2470-01MR Fuji Electric N-Channel Enhancement Mode Power MOSFET Scan PDF
    2SK2471-01 Fairchild Semiconductor N-Channel Enhancement Mode Power MOSFET Scan PDF
    2SK2471-01 Fuji Electric N-Channel Enhancement Mode Power MOSFET Scan PDF
    2SK2471-01 Fuji Electric N-CHANNEL ENHANCEMENT MODE POWER MOSFET Scan PDF
    2SK2473-01 Fuji Electric N-channel MOSFET Original PDF
    2SK2473-01 Fuji Electric N-Channel Enhancement Mode Power MOSFET Scan PDF
    2SK2473-01 Unknown Scan PDF
    2SK2474 Panasonic Silicon N-Channel MOS FET Scan PDF
    2SK2475 Shindengen Electric N-Channel Enhancement type Power MOSFET Original PDF
    2SK2475 Shindengen Electric Power MOSFET Selection Guide Original PDF
    2SK2476 NEC SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE Original PDF
    2SK2476 NEC Semiconductor Selection Guide Original PDF
    2SK2476 NEC Semiconductor Selection Guide 1995 Original PDF
    2SK2477 NEC SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE Original PDF
    2SK2477 NEC Semiconductor Selection Guide 1995 Original PDF
    2SK2477 NEC Semiconductor Selection Guide Original PDF

    2SK247 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK2474 Power F-MOS FETs 2SK2474 Silicon N-Channel MOS Unit : mm For high-speed switching 6.5±0.1 5.3±0.1 • Features 1.8±0.1 2.5±0.1 4.35±0.1 3.0±0.1 ON-resistance RDS on 0.85±0.1 Symbol Rating Unit Drain-Source breakdown voltage VDSS 250 V Gate-Source voltage


    Original     		2SK2474 PDF

    5310A

    Abstract: No abstract text available
    Text: 2SK2471-01 N-channel MOS-FET FAP-II Series 300V > Features - 0,53Ω 10A 80W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators


    Original     		2SK2471-01 5310A PDF

    2SK2476

    Abstract: IEI-1213 MEI-1202 MF-1134
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2476 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2476 is N-Channel MOS Field Effect Transistor designed in millimeter for high voltage switching applications. FEATURES 10.0±0.3


    Original     		2SK2476 2SK2476 O-220 IEI-1213 MEI-1202 MF-1134 PDF

    mosfet 300V 10A

    Abstract: 2SK2471-01 5310A
    Text: 2SK2471-01 N-channel MOS-FET FAP-II Series 300V > Features - 0,53Ω 10A 80W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators


    Original     		2SK2471-01 mosfet 300V 10A 2SK2471-01 5310A PDF

    D1026

    Abstract: 2SK2477 MP-88 2SK24
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2477 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK2477 is N-Channel MOS Field Effect Transistors designed for high voltage switching applications. FEATURES • Low on-state resistance RDS on = 1.0 Ω MAX. (VGS = 10 V, ID = 5.0 A)


    Original     		2SK2477 2SK2477 D1026 MP-88 2SK24 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK2471-01 N-channel MOS-FET FAP-II Series 300V > Features - 0,53Ω 10A 80W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators


    Original     		2SK2471-01 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK2473-01 N-channel MOS-FET FAP-II Series 300V > Features - 0,2Ω 20A 125W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators


    Original     		2SK2473-01 PDF

    2SK2479

    Abstract: IEI-1213 MEI-1202 MF-1134 MP-25 ED 03 Diode
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2479 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2479 is N-Channel MOS Field Effect Transistor de- in millimeters • Low On-Resistance 3.6 ± 0.2 4 1.3 ± 0.2 ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)


    Original     		2SK2479 2SK2479 IEI-1213 MEI-1202 MF-1134 MP-25 ED 03 Diode PDF

    54mj

    Abstract: SMD Transistor nc 2SK2479
    Text: Transistors IC SMD Type MOS Field Effect Transistors 2SK2479 TO-263 Unit: mm Low On-state Resistance:RDS on =7.5 max.(VGS=10V,ID=2.0A) Low Ciss Ciss=485pF TYP 1 .2 7 -0+ 0.1.1 Features +0.1 1.27-0.1 +0.2 4.57-0.2 5 .2 8 -0+ 0.2.2 +0.1 0.81-0.1 2.54 2.54 +0.2


    Original     		2SK2479 O-263 485pF 54mj SMD Transistor nc 2SK2479 PDF

    2SK2478

    Abstract: IEI-1213 MEI-1202 MF-1134
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2478 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2478 is N-Channel MOS Field Effect Transistor designed in millimeter for high voltage switching applications. FEATURES 10.0±0.3


    Original     		2SK2478 2SK2478 O-220 IEI-1213 MEI-1202 MF-1134 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK2470-01MR N-channel MOS-FET FAP-II Series 300V > Features - 0,53Ω 10A 40W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators


    Original     		2SK2470-01MR PDF

    Untitled

    Abstract: No abstract text available
    Text: PU J1 2SK2470-01 MR N-channel MOS-FET tìU tìlE L T te U K FAP-II Series 300V > Features - 0,53ß 10A 40W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage V g s = ± 30V Guarantee Avalanche Proof


    OCR Scan     		2SK2470-01 20KiJ) 0004b25 PDF

    Untitled

    Abstract: No abstract text available
    Text: MOSFETs FAP-II Series - VGS ± 30V, Reduced Turn-Off Time, High Avalanche Ruggedness 200 - 900 Volts Device Type 2SK2519-01 2SK2520-01 MR 2SK2521-01 2SK2522-01MR 2SK2469-01MR 2SK2470-01MR 2SK2471-01 2SK2473-01 2SK1006-01MR 2SK1007-01 2SK1009-01 2SK1386-01


    OCR Scan     		2SK2519-01 2SK2520-01 2SK2521-01 2SK2522-01MR 2SK2469-01MR 2SK2470-01MR 2SK2471-01 2SK2473-01 2SK1006-01MR 2SK1007-01 PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2478 SW ITCHING N-CHANNEL POWER M O S FET INDUSTRIAL USE DESCRIPTION The 2SK2478is N-Channel MOS Field E ffe c tT ra n s is to r designed P A C K A G E D IM E N S IO N S in m illimeter fo r hig h v o lta g e s w itc h in g applications,


    OCR Scan     		2SK2478 2SK2478is PDF

    D1026

    Abstract: 2SK2364 2SK2476 wy 509
    Text: M O S F ie ld E ffe c t T r a n s is to r 2SK2476 N ^ - Ÿ T 'J l'/W x -M O S FET m m 2SK2363/2SK2364«N5l + ^;U Ìé M / W - MOS FET7\ X -f -y ^ > ^ 1 4 ^ ' 1 * n T Ì 3 V , # -f -y 3=-> ft O y - M f iI± 3 0 V f Ä lIT '- r o O tìÀ Ciss = 590 p F t l ï


    OCR Scan     		2SK2476 2SK2363/2SK2364 MP-45F O-220) D10268JJ1V0DS00 D1026 2SK2364 2SK2476 wy 509 PDF

    1Lp marking

    Abstract: TI42 2SK316 100AA 2SK247 2SK301 b5ml BT35 ic marking Yb
    Text: PANASONIC INDL/ELEKiSEMI} 7EC D | b^EflSM D0mb7b 2SK247 2SK247 " F y IJ □ y N f N-Channel Junction "b Ib 1! /W ide-B and, Low -N oise Amplifier • i# • ^ /F e a tu re s A iJ # M ;C ,SS5 ^ h 5 i'0/ L o w Ciss • S S s > 7 9 9 > x gra A{± £ i ' 0/H ig h gm


    OCR Scan     		2SK247 1Lp marking TI42 2SK316 100AA 2SK247 2SK301 b5ml BT35 ic marking Yb PDF

    Untitled

    Abstract: No abstract text available
    Text: MOSFETs FAP-II Series - VGS ± 30V, Reduced Turn-Off Time, High Avalanche Ruggedness 200 - 900 Volts Device Type 2SK2519-01 2SK2520-01MR 2SK2521-01 2SK2522-01MR 2SK2469-01MR 2SK2470-01MR 2SK2471-01 2SK2473-01 2SK1006-01 MR 2SK1007-01 *2SK1009-01 2SK1386-01


    OCR Scan     		2SK2519-01 2SK2520-01MR 2SK2521-01 2SK2522-01MR 2SK2469-01MR 2SK2470-01MR 2SK2471-01 2SK2473-01 2SK1006-01 2SK1007-01 PDF

    55L Power Mosfet

    Abstract: 150P T151 VI-AIM RGS100 80-XI
    Text: FUJI '95 No. 12 ^ít£;í:i;l-*?»<?<r.¿í.;Mi: !'Í-Í> í¡í;!:¡í îii.ï ïf i3î.Sfï«-ï - _ 300V / 1 0 A / 0.53 Q ií d t /W —MOSFET FAP-D Nz- V ^ J l ' X > y \ > A ^ < > 2SK2470-01m r MOSFET mm N-channel enhancement mode POWER MOSFET M • ft


    OCR Scan     		2SK2470-01 55L Power Mosfet 150P T151 VI-AIM RGS100 80-XI PDF

    jm01

    Abstract: HM 1211
    Text: FUJI '95 No. 13 S U JM E iF iM E • , I. ; F uj i: S e ma€ o;n d u;ct c^r ; *P J^ ^ u c;t;s 300V /10A/ 0.530 l i d r / ' v r7 — M O S F E T 2SK2471 -01 F A P - n N5- y*Jl'X > / \ > 7 .j< > hff$/\°7~M0SFET mm N-c hannel enhancement mode PO W ER M O SFET


    OCR Scan     		2SK2471 jm01 HM 1211 PDF

    2SK2476

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2476 SW ITCHING N-CHANNEL POWER M O S FET INDUSTRIAL USE DESCRIPTION P A C K A G E D IM E N S IO N S The 2SK2476is N-Channel MOS Field Effect T ra n s is to r designed in m illimeter fo r hig h v o lta g e s w itc h in g applications,


    OCR Scan     		2SK2476 2SK2476 PDF

    Untitled

    Abstract: No abstract text available
    Text: FUJI '95 No.1 4 m ±w M :H :" '“ r : 3 0 0 V / 2 0 A / 0.2 Q Ii± /W —MOSFET F A P -n 2SK2473-01 Kffj/\°7-MOSFET N-c hannel enhancement mode POWER MOSFET I $ :H: Features nW vk High curre nt \\ i t > ilc ia Low -on resistance i\i%\LW W t) Low driving pow er


    OCR Scan     		2SK2473-01 111iw 13dS01AI-Â PDF

    Untitled

    Abstract: No abstract text available
    Text: FU JI 2SK2473-01 N-channel MOS-FET FAP-II Series 300V > Features - 0,2Q 20A 125W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage Vgs = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators


    OCR Scan     		2SK2473-01 PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2479 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2479 is N -C hannel MOS Field E ffect T ra n s is to r de­ PACKAGE D IM E N S IO N S in m illim e te rs sig n e d fo r high v o lta g e s w itc h in g a p p lic a tio n s .


    OCR Scan     		2SK2479 2SK2479 PDF

    2SK2477

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2477 SW ITCHING N-CHANNEL POWER M O S FET INDUSTRIAL USE DESCRIPTION The 2SK2477 is N-Channel MOS Field Effect T ra n s is to r designed P A C K A G E D IM E N S IO N S in m illimeter fo r hig h v o lta g e s w itc h in g applications,


    OCR Scan     		2SK2477 2SK2477 PDF