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    Toshiba America Electronic Components 2SK2608

    N CHANNEL MOS TYPE (HIGH SPEED, HIGH VOLTAGE SWITCHING, SWITCHING REGULATOR APPLICATIONS) / Trans MOSFET N-CH Si 900V 3A 3-Pin(3+Tab) TO-220AB
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    Win Source Electronics 2SK2608 21,598
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    2SK2608 Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK2608 Toshiba N-Channel MOSFET Original PDF
    2SK2608 Toshiba Original PDF
    2SK2608 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    2SK2608 Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF
    2SK2608 Toshiba Field Effect Transistor Silicon N Channel MOS Type (Pi-MOS III) Scan PDF
    2SK2608 Toshiba Silicon N channel field effect transistor for high speed, high voltage switching applications, switching regulator applications Scan PDF

    2SK2608 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    K2608

    Abstract: 2SK2608 2-10P1B
    Text: 2SK2608 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅢ 2SK2608 ○ スイッチングレギュレータ用 単位: mm z オン抵抗が低い。 : RDS (ON) = 3.73Ω (標準) z 順方向伝達アドミタンスが高い。 : |Yfs| = 2.6 S (標準)


    Original     		PDF 2SK2608 O-220AB SC-46 2-10P1B K2608 2002/95/EC) K2608 2SK2608 2-10P1B

    2-10P1B

    Abstract: 2SK2608
    Text: 2SK2608 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2608 Switching Regulator Applications Unit: mm l Low drain−source ON resistance : RDS (ON) = 3.73 Ω (typ.) l High forward transfer admittance : |Yfs|= 2.6 S (typ.) l Low leakage current


    Original     		PDF 2SK2608 2-10P1B 2SK2608

    K2608

    Abstract: No abstract text available
    Text: 2SK2608 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type −MOSIII 2SK2608 Switching Regulator Applications Unit: mm Low drain−source ON resistance : RDS (ON) = 3.73 High forward transfer admittance : |Yfs|= 2.6 S (typ.) (typ.) Low leakage current


    Original     		PDF 2SK2608 K2608

    transistor k2608

    Abstract: K2608 2sk2608
    Text: 2SK2608 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2608 Switching Regulator Applications Unit: mm z Low drain−source ON resistance : RDS (ON) = 3.73 Ω (typ.) z High forward transfer admittance : |Yfs|= 2.6 S (typ.) z Low leakage current


    Original     		PDF 2SK2608 transistor k2608 K2608 2sk2608

    transistor k2608

    Abstract: K2608 toshiba transistor k2608 2sk2608
    Text: 2SK2608 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2608 Switching Regulator Applications Unit: mm Low drain−source ON resistance : RDS (ON) = 3.73 Ω (typ.) High forward transfer admittance : |Yfs|= 2.6 S (typ.) Low leakage current


    Original     		PDF 2SK2608 transistor k2608 K2608 toshiba transistor k2608 2sk2608

    K2608

    Abstract: transistor k2608 2SK2608 equivalent 2-10P1B 2SK2608
    Text: 2SK2608 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2608 Switching Regulator Applications Unit: mm z Low drain−source ON resistance : RDS (ON) = 3.73 Ω (typ.) z High forward transfer admittance : |Yfs|= 2.6 S (typ.) z Low leakage current


    Original     		PDF 2SK2608 K2608 transistor k2608 2SK2608 equivalent 2-10P1B 2SK2608

    2SK2608 equivalent

    Abstract: 2SK2608 dr-3 Equivalent to 2SK2608 2-10P1B
    Text: 2SK2608 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2608 Switching Regulator Applications Unit: mm Low drain−source ON resistance : RDS (ON) = 3.73 Ω (typ.) High forward transfer admittance : |Yfs|= 2.6 S (typ.) Low leakage current


    Original     		PDF 2SK2608 2SK2608 equivalent 2SK2608 dr-3 Equivalent to 2SK2608 2-10P1B

    transistor k2608

    Abstract: K2608 2-10P1B 2SK2608
    Text: 2SK2608 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2608 Switching Regulator Applications Unit: mm z Low drain−source ON resistance : RDS (ON) = 3.73 Ω (typ.) z High forward transfer admittance : |Yfs|= 2.6 S (typ.) z Low leakage current


    Original     		PDF 2SK2608 transistor k2608 K2608 2-10P1B 2SK2608

    5252 F 1009 4-pin

    Abstract: TPC 8028 MARKING S3H SOT363 TK8A50D equivalent tk6a65d equivalent 2SK4112 TPCA8030-H toshiba laptop charging CIRCUIT diagram TK80A08K3 TPCA*8025
    Text: 2009-5 PRODUCT GUIDE MOSFETs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4


    Original     		PDF

    Toshiba TMPA8873

    Abstract: TA1343NG TMPA8891 TMPA8893 tmpa8873 tmpa8859 TC90A96BFG TB1318FG TMPA8857 TMPA8853
    Text: 2007-5 SYSTEM CATALOG TV Solutions Guide Digital and Analog Flat TV Organizations Contents ● ICs for Tuners…………………………………4-5 Digital Broadcasting Digital Broadcast Signal Processing DRAM ● PIF/SIF Systems…………………………………6


    Original     		PDF SCE0001C S-167 SCE0001D Toshiba TMPA8873 TA1343NG TMPA8891 TMPA8893 tmpa8873 tmpa8859 TC90A96BFG TB1318FG TMPA8857 TMPA8853

    2SK2056

    Abstract: 2SK1603 2sk1603 datasheet TOSHIBA "ULTRA HIGH SPEED" DIODE 1A transistor 2SK1603 2SK3561 equivalent 2SK2915 EQUIVALENT 1045y 2SK3569 equivalent 2SK1078
    Text: O W Y.C M.T .1 O W C W 2005-3 WW .100Y. M.T O W WW .100Y.C M.TW .TW M WW 00Y.CO .TW .CO .TW Y W M .1 W.1 Y.COM W WW 00Y.CO .TW W W W .T 00 W.1 Y.COM W W.1 Y.COM W W W W .T W 00 W M.T .100 W.1 Y.COM W M.T O W O W C . .C W WW .100Y .TW M.T .100 .TW 00Y M O 1


    Original     		PDF BCE0017B 2SK2056 2SK1603 2sk1603 datasheet TOSHIBA "ULTRA HIGH SPEED" DIODE 1A transistor 2SK1603 2SK3561 equivalent 2SK2915 EQUIVALENT 1045y 2SK3569 equivalent 2SK1078

    fqp60n06

    Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
    Text: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier


    Original     		PDF STP7NB40 STT3PF30L STD20NE03L STP60NE03L-12 STP60NE03L-10 STP40NF03L STP80NE03L-06 STS4DPF30L fqp60n06 spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640

    MOSFET TOSHIBA 2SK2917

    Abstract: 2sK2750 equivalent 2sk2997 2SK3759 2SJ618 2sk3067 2SK3767 2SK2842 equivalent 2SK2837 equivalent 2SK2843 equivalent
    Text: Power MOSFET High Voltage:more than 150V Dec, 2003 TOSHIBA Semiconductor Company Discrete Semiconductor Division 2003 Dec DP0540004_01 1/16 Trend of High Speed and High Voltage Power MOSFETs R D S (ON )* Q s w ( O h m * n C) 8 VDSS=200V RDS(ON)@VGS=10V 6


    Original     		PDF DP0540004 MOSFET TOSHIBA 2SK2917 2sK2750 equivalent 2sk2997 2SK3759 2SJ618 2sk3067 2SK3767 2SK2842 equivalent 2SK2837 equivalent 2SK2843 equivalent

    2SK3567 equivalent

    Abstract: 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603
    Text: 2008-9 PRODUCT GUIDE Power MOSFETs s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Toshiba’s power MOSFET devices meet the needs of a wide range of ultra-high-density applications. 1.Features and Structure. 2


    Original     		PDF BCE0017F E-28831 BCE0017G 2SK3567 equivalent 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603

    2SK3878 equivalent

    Abstract: 2sk2611 2SK3759 2SK3878 2SK3869 2SK2013 toshiba POWER MOS FET 2sj 2sk 2SK3868 2SK3567 equivalent 2SK2718
    Text: [ 2 ] Selection Guide [ 2 ] Selection Guide [ 2 ] Selection Guide Power MOSFET Product Line-up ID = 0.5~20 A 1. VDSS (V) 12 16 20 30 40 50 60 100 150 180 ◊2SK2963 (0.7) ▲2SK2962 (0.7) ◊2SJ508 (1.9) ▲2SJ509 (1.9) ▲2SK3670 (1.7) ♦2SJ313 (5.0) ▼2SJ338 (5.0)


    Original     		PDF 2SK2963 2SK2962 2SJ508 2SJ509 2SK3670 2SJ313 2SJ338 2SK2013 2SK2162 2SJ360 2SK3878 equivalent 2sk2611 2SK3759 2SK3878 2SK3869 2SK2013 toshiba POWER MOS FET 2sj 2sk 2SK3868 2SK3567 equivalent 2SK2718

    TA1343NG

    Abstract: TB1318FG pal 011 A SPEAKER OUTPUT IC TC90A96BFG tmpa8859 Toshiba TMPA8873 TMPA8893 tmpa8873 TMPA8891 gt30f122
    Text: システムカタログ システムカタログ TVソリューション 2007-5 デジタルテレビ・FPDテレビの構成 ● チューナ用IC デジタル放送 ● PIF/SIFシステム DRAM デジタル放送信号処理 ● 映像信号処理 伝送処理


    Original     		PDF p12p13 p17p18 p19p22 SCJ0001D SCJ0001C TA1343NG TB1318FG pal 011 A SPEAKER OUTPUT IC TC90A96BFG tmpa8859 Toshiba TMPA8873 TMPA8893 tmpa8873 TMPA8891 gt30f122

    2SK4207

    Abstract: to220sis TPCA*8023 tk80A08K3 TPC8119 TK40A08K3 2SK4112 ssm3j16fs 2sk3568 TPC8A03
    Text: 製品カタログ 2009-9 東芝半導体 製品カタログ MOSFET SEMICONDUCTOR h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S 1 特長と構造. 3


    Original     		PDF BCJ0082B BCJ0082A 2SK4207 to220sis TPCA*8023 tk80A08K3 TPC8119 TK40A08K3 2SK4112 ssm3j16fs 2sk3568 TPC8A03

    2-10P1B

    Abstract: 2SK2608
    Text: TOSHIBA 2SK2608 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSIII 2SK2608 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS SWITCHING REGULATOR APPLICATIONS • Low Drain-Sorce ON Resistance : Rd S (ON)“ 3.730 (Typ.)


    OCR Scan     		PDF 2SK2608 2-10P1B

    2-10P1B

    Abstract: 2SK2608
    Text: TOSHIBA 2SK2608 SILICON N CHANNEL MOS TYPE tt-MOSIII 2SK2608 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS SWITCHING REGULATOR APPLICATIONS Low Drain-Sorce ON Resistance : RßS (ON) = 3.73 ü, (Typ.) High Forward Transfer Admittance : |Yfs| = 2.6 S (Typ.)


    OCR Scan     		PDF 2SK2608 2-10P1B 2SK2608

    ED 3730

    Abstract: No abstract text available
    Text: TOSHIBA 2SK2608 SILICON N C H A N N E L M O S TYPE tt-M O S III SW ITCH IN G REGULATOR APPLICATIO NS INDUSTRIAL APPLICATIONS Unit in mm 03.6 + 0.2 • • • • * *1 Low Drain-Sorce ON Resistance : RDS (ON)= 3-730 (Typ.) High Forward Transfer Admittance : |Yfs| = 2.6S(Typ.)


    OCR Scan     		PDF 2SK2608 961001EAA2 20kil) ED 3730

    2SK2608

    Abstract: 2-10P1B
    Text: TOSHIBA 2SK2608 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSIII 2SK2608 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS SWITCHING REGULATOR APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm 10.3MAX. • • • • 0 3 .6 1 0 . 2 Low Drain-Sorce O N Resistance : RdS (O N ) “ 3.730 (Typ.)


    OCR Scan     		PDF 2SK2608 2SK2608 2-10P1B

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SK2608 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSIII 2SK2608 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm SWITCHING REGULATOR APPLICATIONS 10.3MAX. • Low Drain-Sorce ON Resistance


    OCR Scan     		PDF 2SK2608 3-73fi

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA 2SK2608 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSIII 2SK26Q8 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS SWITCHING REGULATOR APPLICATIONS IN D U ST R IA L A PPLIC A TIO N S U nit in mm 10.3MAX. • Low Drain-Sorce ON Resistance


    OCR Scan     		PDF 2SK2608 2SK26Q8 --90V, --60mH

    2SK2608

    Abstract: No abstract text available
    Text: TO SHIBA 2SK2608 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSIII 2SK2608 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS SWITCHING REGULATOR APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm 10.3MAX. . 03.6 + 0.2 • • • • Low Drain-Sorce ON Resistance : Rd S (ON) = 3.73il (Typ.)


    OCR Scan     		PDF 2SK2608 2SK2608