Untitled
Abstract: No abstract text available
Text: 2SK2772 Power F-MOS FETs 2SK2772 Tentative Silicon N-Channel MOS Unit : mm For high-speed switching 6.5±0.1 5.3±0.1 ● High drain-source voltage (VDSS) 0.85±0.1 1.0±0.2 0.8max. 0.2max. High-speed switching 0.75±0.1 Symbol Rating Unit Drain-Source breakdown voltage
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2SK2772
2SK2772
SC-63
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2SK2772
Abstract: No abstract text available
Text: 2SK2772 Power F-MOS FETs 2SK2772 Tentative Silicon N-Channel MOS Unit : mm For high-speed switching 6.5±0.1 5.3±0.1 ● High drain-source voltage (VDSS) 0.8max. 0.85±0.1 0.75±0.1 1 Gate-Source voltage Drain current Max drain current Allowable power dissipation
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2SK2772
2SK2772
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2sc5929
Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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responsibiliXP08081
XP08546
XP0A554
XP0D873
XP0D874
XP0D875
XP0E554
2sc5929
MN1280
TRANSISTOR 2SC5929
3SK129
3SK97
2sc5928
2PG009
2SC5929 equivalent
2sk4000
2sd965 TRANSISTOR REPLACEMENT GUIDE
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MN1873287
Abstract: an6512n 2sk3190 MN171202 mn158413 mn15142 mn187164 mn6740 AN7210 MN15283
Text: Maintenance and Discontinued Types <Maintenance Types> Maintenance and Discontinued Types This product is not dealt with anymore. Customers dealing with this product conventionally may contact our sales division in the case of ambiguity. <Discontinued Types>
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MN101C01C
MN15224
MN101C01D
MN15226
MN101C027
MN15261
MN101C03A
MN101C38A
MN15263
MN101C06D
MN1873287
an6512n
2sk3190
MN171202
mn158413
mn15142
mn187164
mn6740
AN7210
MN15283
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2SK2772
Abstract: 43501
Text: Panasonic P o w er F -M O S FETs 2SK2772 Tentative S ilic o n N - C h a n n e l M O S U n it : m m For high-speed switching 5.3+0.1 • Features • High-speed switching • High drain-source voltage (V d s s ) Absolute Maximum Ratings (Ta = 25°C) P aram eter
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2SK2772
SC-63
VGS-10V,
43501
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2SK2772
Abstract: No abstract text available
Text: Panasonic P o w e r F -M O S F E T s 2SK2772 Tentative Silicon N-Channel MOS For high-speed switching Unit : mm • Features • High-speed switching • High drain-source voltage (V d s s ) Absolute Maximum Ratings (Ta = 25°C) Param eter me Symbol Rating
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2SK2772
SC-63
VGs-10V,
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AN3962FB
Abstract: MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202
Text: umb Type No. Page MOS L Type No. Page Type No. Page Type No. MN151614 43 MN1882417 45 ▲ MN151630 43 MN1882421 46 MN3204 • MN3200 Series Page Type No. Page MN56000 Series 58 63 MN56020 58 68 • O M N 101C 01A 46 MN152810 43 MN188321 45 MN3205 68 MN56030
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MN101C01C
MN101C01D
MN101C025
MN1020003
MN1020004A
MN1020004AFB
MN1020012A
MN1020
12AFA
MN1020015
AN3962FB
MN1880023
mn19412
MN1874033
IC AN7135
an3814k
MN1883214
an8294nsb
mn4117405
mn171202
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