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    2SK2847 Price and Stock

    Toshiba America Electronic Components 2SK2847(F)

    MOSFET N-CH 900V 8A TO3PIS
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    DigiKey 2SK2847(F) Tube
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    Toshiba America Electronic Components 2SK2847

    8 A, 900 V, 1.4 OHM, N-CHANNEL, SI, POWER, MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2SK2847 251
    • 1 $4.23
    • 10 $2.115
    • 100 $1.833
    • 1000 $1.833
    • 10000 $1.833
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    2SK2847 Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK2847 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    2SK2847 Toshiba FETs - Nch 700V Original PDF
    2SK2847 Toshiba Original PDF
    2SK2847 Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF
    2SK2847 Toshiba Field Effect Transistor Silicon N Channel MOS Type (Pi-MOS III) Scan PDF
    2SK2847 Toshiba Silicon N-channel MOS type field effect transistor for high speed, high current switching applications, chopper regulator,DC-DC converter and motor drive applications Scan PDF
    2SK2847(F) Toshiba 2SK2847 - MOSFET N-CH 900V 8A 2-16F1B Original PDF

    2SK2847 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TOSHIBA K2847

    Abstract: No abstract text available
    Text: 2SK2847 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2847 DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 1.1 Ω (typ.) z High forward transfer admittance : |Yfs| = 7.0 S (typ.)


    Original     		PDF 2SK2847 TOSHIBA K2847

    k2847

    Abstract: TOSHIBA K2847 2sk2847 transistor k2847 2SK2847(F)
    Text: 2SK2847 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2847 DC−DC Converter and Motor Drive Applications Unit: mm Low drain−source ON resistance : RDS (ON) = 1.1 Ω (typ.) High forward transfer admittance : |Yfs| = 7.0 S (typ.)


    Original     		PDF 2SK2847 k2847 TOSHIBA K2847 2sk2847 transistor k2847 2SK2847(F)

    2sk2847

    Abstract: No abstract text available
    Text: 2SK2847 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2847 DC−DC Converter and Motor Drive Applications Unit: mm Low drain−source ON resistance : RDS (ON) = 1.1 Ω (typ.) High forward transfer admittance : |Yfs| = 7.0 S (typ.)


    Original     		PDF 2SK2847 2sk2847

    Untitled

    Abstract: No abstract text available
    Text: 2SK2847 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type −MOSIII 2SK2847 DC−DC Converter and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 1.1 High forward transfer admittance : |Yfs| = 7.0 S (typ.) Low leakage current


    Original     		PDF 2SK2847

    2SK2847

    Abstract: No abstract text available
    Text: 2SK2847 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2847 DC−DC Converter and Motor Drive Applications Unit: mm l Low drain−source ON resistance : RDS (ON) = 1.1 Ω (typ.) l High forward transfer admittance : |Yfs| = 7.0 S (typ.)


    Original     		PDF 2SK2847 2SK2847

    k2847

    Abstract: toshiba k2847 2SK2847
    Text: 2SK2847 東芝電界効果トランジスタ シリコンNチャネルMOS形 π-MOSIII 2SK2847 ○ DC-DC コンバータモータドライブ用 単位: mm • オン抵抗が低い。 • 順方向伝達アドミタンスが高い。 : |Yfs| = 7.0 S (標準)


    Original     		PDF 2SK2847 2-16F1B k2847 toshiba k2847 2SK2847

    k2847

    Abstract: toshiba k2847 transistor Toshiba k2847 K284 2sk2847 transistor k2847 toshiba transistor k2847
    Text: 2SK2847 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2847 DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 1.1 Ω (typ.) z High forward transfer admittance : |Yfs| = 7.0 S (typ.)


    Original     		PDF 2SK2847 k2847 toshiba k2847 transistor Toshiba k2847 K284 2sk2847 transistor k2847 toshiba transistor k2847

    TOSHIBA K2847

    Abstract: K2847 2SK2847 transistor Toshiba k2847 transistor k2847 toshiba transistor k2847
    Text: 2SK2847 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2847 DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 1.1 Ω (typ.) z High forward transfer admittance : |Yfs| = 7.0 S (typ.)


    Original     		PDF 2SK2847 TOSHIBA K2847 K2847 2SK2847 transistor Toshiba k2847 transistor k2847 toshiba transistor k2847

    TOSHIBA K2847

    Abstract: k2847
    Text: 2SK2847 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2847 DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 1.1 Ω (typ.) z High forward transfer admittance : |Yfs| = 7.0 S (typ.)


    Original     		PDF 2SK2847 TOSHIBA K2847 k2847

    5252 F 1009 4-pin

    Abstract: TPC 8028 MARKING S3H SOT363 TK8A50D equivalent tk6a65d equivalent 2SK4112 TPCA8030-H toshiba laptop charging CIRCUIT diagram TK80A08K3 TPCA*8025
    Text: 2009-5 PRODUCT GUIDE MOSFETs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4


    Original     		PDF

    Toshiba TMPA8873

    Abstract: TA1343NG TMPA8891 TMPA8893 tmpa8873 tmpa8859 TC90A96BFG TB1318FG TMPA8857 TMPA8853
    Text: 2007-5 SYSTEM CATALOG TV Solutions Guide Digital and Analog Flat TV Organizations Contents ● ICs for Tuners…………………………………4-5 Digital Broadcasting Digital Broadcast Signal Processing DRAM ● PIF/SIF Systems…………………………………6


    Original     		PDF SCE0001C S-167 SCE0001D Toshiba TMPA8873 TA1343NG TMPA8891 TMPA8893 tmpa8873 tmpa8859 TC90A96BFG TB1318FG TMPA8857 TMPA8853

    2SK2056

    Abstract: 2SK1603 2sk1603 datasheet TOSHIBA "ULTRA HIGH SPEED" DIODE 1A transistor 2SK1603 2SK3561 equivalent 2SK2915 EQUIVALENT 1045y 2SK3569 equivalent 2SK1078
    Text: O W Y.C M.T .1 O W C W 2005-3 WW .100Y. M.T O W WW .100Y.C M.TW .TW M WW 00Y.CO .TW .CO .TW Y W M .1 W.1 Y.COM W WW 00Y.CO .TW W W W .T 00 W.1 Y.COM W W.1 Y.COM W W W W .T W 00 W M.T .100 W.1 Y.COM W M.T O W O W C . .C W WW .100Y .TW M.T .100 .TW 00Y M O 1


    Original     		PDF BCE0017B 2SK2056 2SK1603 2sk1603 datasheet TOSHIBA "ULTRA HIGH SPEED" DIODE 1A transistor 2SK1603 2SK3561 equivalent 2SK2915 EQUIVALENT 1045y 2SK3569 equivalent 2SK1078

    MOSFET TOSHIBA 2SK2917

    Abstract: 2sK2750 equivalent 2sk2997 2SK3759 2SJ618 2sk3067 2SK3767 2SK2842 equivalent 2SK2837 equivalent 2SK2843 equivalent
    Text: Power MOSFET High Voltage:more than 150V Dec, 2003 TOSHIBA Semiconductor Company Discrete Semiconductor Division 2003 Dec DP0540004_01 1/16 Trend of High Speed and High Voltage Power MOSFETs R D S (ON )* Q s w ( O h m * n C) 8 VDSS=200V RDS(ON)@VGS=10V 6


    Original     		PDF DP0540004 MOSFET TOSHIBA 2SK2917 2sK2750 equivalent 2sk2997 2SK3759 2SJ618 2sk3067 2SK3767 2SK2842 equivalent 2SK2837 equivalent 2SK2843 equivalent

    2SK3567 equivalent

    Abstract: 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603
    Text: 2008-9 PRODUCT GUIDE Power MOSFETs s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Toshiba’s power MOSFET devices meet the needs of a wide range of ultra-high-density applications. 1.Features and Structure. 2


    Original     		PDF BCE0017F E-28831 BCE0017G 2SK3567 equivalent 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603

    GT30F131

    Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		PDF SCE0004L TTC4116* 2SC4118 TTA1586* 2SA1588 2SC4117 2SA1587 2SC5233 2SC4738 2SA1832 GT30F131 GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01

    2SK3878 equivalent

    Abstract: 2sk2611 2SK3759 2SK3878 2SK3869 2SK2013 toshiba POWER MOS FET 2sj 2sk 2SK3868 2SK3567 equivalent 2SK2718
    Text: [ 2 ] Selection Guide [ 2 ] Selection Guide [ 2 ] Selection Guide Power MOSFET Product Line-up ID = 0.5~20 A 1. VDSS (V) 12 16 20 30 40 50 60 100 150 180 ◊2SK2963 (0.7) ▲2SK2962 (0.7) ◊2SJ508 (1.9) ▲2SJ509 (1.9) ▲2SK3670 (1.7) ♦2SJ313 (5.0) ▼2SJ338 (5.0)


    Original     		PDF 2SK2963 2SK2962 2SJ508 2SJ509 2SK3670 2SJ313 2SJ338 2SK2013 2SK2162 2SJ360 2SK3878 equivalent 2sk2611 2SK3759 2SK3878 2SK3869 2SK2013 toshiba POWER MOS FET 2sj 2sk 2SK3868 2SK3567 equivalent 2SK2718

    IGBT GT30F124

    Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
    Text: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ


    Original     		PDF SCJ0004R SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 IGBT GT30F124 IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075

    TA1343NG

    Abstract: TB1318FG pal 011 A SPEAKER OUTPUT IC TC90A96BFG tmpa8859 Toshiba TMPA8873 TMPA8893 tmpa8873 TMPA8891 gt30f122
    Text: システムカタログ システムカタログ TVソリューション 2007-5 デジタルテレビ・FPDテレビの構成 ● チューナ用IC デジタル放送 ● PIF/SIFシステム DRAM デジタル放送信号処理 ● 映像信号処理 伝送処理


    Original     		PDF p12p13 p17p18 p19p22 SCJ0001D SCJ0001C TA1343NG TB1318FG pal 011 A SPEAKER OUTPUT IC TC90A96BFG tmpa8859 Toshiba TMPA8873 TMPA8893 tmpa8873 TMPA8891 gt30f122

    k2847

    Abstract: TOSHIBA K2847 l47c 2SK2847
    Text: TOSHIBA 2SK2847 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSIII 2SK2847 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS i c Q + nc: • Low Drain-Source ON Resistance


    OCR Scan     		PDF 2SK2847 k2847 TOSHIBA K2847 l47c 2SK2847

    L47c

    Abstract: 2SK2847
    Text: TOSHIBA 2SK2847 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSIII 2SK2847 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS • Low Drain-Source ON Resistance


    OCR Scan     		PDF 2SK2847 L47c 2SK2847

    2f3 transistor

    Abstract: No abstract text available
    Text: T O S H IB A 2SK2847 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSIII 2SK2847 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS • Low Drain-Source ON Resistance


    OCR Scan     		PDF 2SK2847 100//A 2f3 transistor

    marking transistor BAS 16

    Abstract: No abstract text available
    Text: TO SHIBA 2SK2847 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSIII 2S K 2 8 4 7 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS • Low Drain-Source ON Resistance


    OCR Scan     		PDF 2SK2847 marking transistor BAS 16

    2SK2847

    Abstract: No abstract text available
    Text: TOSHIBA 2SK2847 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSIII 2SK2847 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS Low Drain-Source ON Resistance : Rd S(ON) = 1-1^ (Typ.) High Forward Transfer Admittance : |Yfs| = 7.0S (Typ.)


    OCR Scan     		PDF 2SK2847 961001EAA2' 2SK2847

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SK2847 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL M O S TYPE tt-M O SIII 2SK2847 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm DC-DC CONVERTER A N D M O TOR DRIVE APPLICATIONS • Low Drain-Source ON Resistance


    OCR Scan     		PDF 2SK2847 20kil)