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    2SK3018 Search Results

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    2SK3018 Price and Stock

    MOSLEADER 2SK3018-ML

    N-ch MOS 30V 0.1A SOT-23
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    DigiKey 2SK3018-ML Reel 300,000 200
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    • 1000 $0.03416
    • 10000 $0.03122
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    Micro Commercial Components 2SK3018-TP

    MOSFET N-CH 30V 100MA SOT323
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SK3018-TP Reel 36,000 3,000
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    2SK3018-TP Cut Tape 1,789 1
    • 1 $0.41
    • 10 $0.289
    • 100 $0.1458
    • 1000 $0.08827
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    2SK3018-TP Digi-Reel 1
    • 1 $0.41
    • 10 $0.289
    • 100 $0.1458
    • 1000 $0.08827
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    Mouser Electronics 2SK3018-TP 4,879
    • 1 $0.41
    • 10 $0.289
    • 100 $0.119
    • 1000 $0.089
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    TME 2SK3018-TP 5,005 5
    • 1 -
    • 10 $0.16
    • 100 $0.081
    • 1000 $0.072
    • 10000 $0.068
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    ROHM Semiconductor 2SK3018T106

    MOSFET N-CH 30V 100MA UMT3
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    DigiKey 2SK3018T106 Cut Tape 1
    • 1 $0.33
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    2SK3018T106 Digi-Reel 1
    • 1 $0.33
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    2SK3018T106 Reel
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    Avnet Americas 2SK3018T106 Reel 21 Weeks 3,000
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    Newark 2SK3018T106 Cut Tape 4,596 5
    • 1 $0.374
    • 10 $0.278
    • 100 $0.157
    • 1000 $0.104
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    2SK3018T106 Reel 3,000
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    Bristol Electronics 2SK3018T106 30,000
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    Quest Components 2SK3018T106 896
    • 1 $0.3
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    2SK3018T106 333
    • 1 $0.1208
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    2SK3018T106 196
    • 1 $0.35
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    • 100 $0.105
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    TTI 2SK3018T106 Reel 3,000
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    Ameya Holding Limited 2SK3018T106 302 1
    • 1 $0.2625
    • 10 $0.2625
    • 100 $0.177
    • 1000 $0.1313
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    ComSIT USA 2SK3018T106 17,680
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    Avnet Asia 2SK3018T106 24 Weeks 3,000
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    New Advantage Corporation 2SK3018T106 6,000 1
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    Win Source Electronics 2SK3018T106 526,216
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    HT JinYu Semiconductor 2SK3018

    N-Channel Enhancement Mode MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Verical 2SK3018 393,000 6,000
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    ROHM Semiconductor 2SK3018-T106

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics 2SK3018-T106 245 20
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    2SK3018 Datasheets (9)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SK3018 Kexin N-Channel MOSFET for Switching Original PDF
    2SK3018 ROHM Small switching (30V, 0.1A) Original PDF
    2SK3018 ROHM TRANS MOSFET N-CH 30V 0.1A 3UMT3(SC-70) Original PDF
    2SK3018 ROHM 2.5V Drive Nch MOS FET Original PDF
    2SK3018 TY Semiconductor N-Channel MOSFET for Switching - SOT-23 Original PDF
    2SK3018 ROHM Small switching (30V, 0.1 A) Scan PDF
    2SK3018T106 ROHM TRANS MOSFET N-CH 30V 0.1A 3UMT3(SC-70) T/R Original PDF
    2SK3018T106 ROHM Small Switching (30 V, 0.1 A) Original PDF
    2SK3018-TP Micro Commercial Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - N-CHANNEL MOSFET, SOT-323 PACKAG Original PDF

    2SK3018 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: MOSFET SMD Type Product specification 2SK3018 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 ● Low on-resistance. +0.1 1.3-0.1 +0.1 2.4-0.1 • Features 0.4 3 1 ● Fast switching speed. 0.55 Drain 2 +0.1 0.95-0.1 +0.1 1.9-0.1 ● Drive circuits can be simple.


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    PDF 2SK3018 OT-23

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS 2SK3018 N-channel MOSFET SOT-23 FEATURES z Low on-resistance z Fast switching speed z Low voltage drive makes this device ideal for portable equipment z Easily designed drive circuits


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    PDF OT-23 2SK3018 OT-23

    SPHE8202

    Abstract: SPHE8202S 2SB1132R 1N4148 SMT BFR68 BC30 BC26 sphe8 ELCO-CON24 3904 smt
    Text: Saalfeld & Freitas / Curitiba + D4 1N4148 SMT CDLDO 100 BC25 jan/2006 RFGND 1000PF GND 0.1UF BC26 0.01UF 0.1UF 0.1UF BC22 0.1UF C43 0.1UF BC21 BC24 3904 Q12 + DVD_VR CD_VR 0.1UF 0.1UF BC28 0.1UF BC29 RFGND RFGND Q9 2SK3018 2 R52 R45 2 Q7 2SK3018 100K 100K


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    PDF jan/2006 1000PF 2SK3018 NC/100PF 120PF) 27MHz 1000PF SPHE8202 SPHE8202S 2SB1132R 1N4148 SMT BFR68 BC30 BC26 sphe8 ELCO-CON24 3904 smt

    2SK3018

    Abstract: UM5K1N
    Text: UM5K1N Transistors 2.5V Drive Nch+Nch MOS FET UM5K1N zExternal dimensions Unit : mm zStructure Silicon N-channel MOS FET UMT5 2.0 1.3 zFeatures 1) Two 2SK3018 transistors in a single UMT package. 2) Mounting cost and area can be cut in half. 3) Low on-resistance.


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    PDF 2SK3018 100mA) 30ipment UM5K1N

    UM5K1N

    Abstract: 2SK3018 two transistor forward
    Text: Transistor Small switching 30V, 0.1A UM5K1N FFeatures 1) Two 2SK3018 transistors in a single UMT package. 2) Mounting cost and area can be cut in half. 3) Low on-resistance. 4) Low voltage drive (2.5V) makes this device ideal for portable equipment. 5) Easily designed drive circuits.


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    PDF 2SK3018 100mA) UM5K1N two transistor forward

    mosfet equivalent

    Abstract: 2SK3018 T106 2SK3018 sc70
    Text: 2SK3018 Transistor Small switching 30V, 0.1A 2SK3018 zExternal dimensions (Unit : mm) zApplications Interfacing, switching (30V, 100mA) 2.0±0.2 0.9±0.1 1.3±0.1 (2) (2) (3) (3) 0.7±0.1 0 to 0.1 0.3+0.1 0.15±0.05 −0 All terminals have same dimensions


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    PDF 2SK3018 100mA) SC-70 mosfet equivalent 2SK3018 T106 2SK3018 sc70

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet 2.5V Drive Nch MOSFET 2SK3018UB  Structure Silicon N-channel MOSFET  Dimensions Unit : mm UMT3F 2.0 0.9 0.53 (1) 0.53 0.425 2.1 Features 1) Low on-resistance. 2) Low voltage drive(2.5V drive). (3) 1.25 0.425 0.32 (2) 0.65 0.65 1.3 0.13


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    PDF 2SK3018UB 2SK3018UB Pw10s, R1120A

    4405

    Abstract: 2SK3018 8467 transistor 2SK301 74958 NMOS nmos transistor 7495 M2SK3018
    Text: SPICE PARAMETER 2SK3018 by ROHM TR Div. * 2SK3018 NMOS model * Date: 2006/09/07 .MODEL 2SK3018 NMOS + LEVEL=3 + L=2.0000E-6 + W=.27 + KP=1.0298E-6 + RS=.8 + RD=.36503 + VTO=1.4405 + RDS=2.8571E9 + TOX=2.0000E-6 + CGSO=37.037E-15 + CGDO=35.457E-12 + CBD=18.868E-12


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    PDF 2SK3018 M2SK3018 0000E-6 0298E-6 8571E9 037E-15 457E-12 868E-12 4405 2SK3018 8467 transistor 2SK301 74958 NMOS nmos transistor 7495

    Untitled

    Abstract: No abstract text available
    Text: UM6K1N Transistors 2.5V Drive Nch+Nch MOS FET UM6K1N zStructure Silicon N-channel MOS FET zExternal dimensions Unit : mm UMT6 2.0 0.9 1.3 0.65 0.65 0.7 (5) (4) (6) 1.25 2.1 1pin mark (3) (1) (2) 0.2 0.1Min. zFeatures 1) Two 2SK3018 transistors in a single UMT package.


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    PDF 2SK3018 100mA) R1102A

    02M45

    Abstract: No abstract text available
    Text: UM5K1N Transistors 2.5V Drive Nch+Nch MOS FET UM5K1N zExternal dimensions Unit : mm zStructure Silicon N-channel MOS FET UMT5 2.0 1.3 zFeatures 1) Two 2SK3018 transistors in a single UMT package. 2) Mounting cost and area can be cut in half. 3) Low on-resistance.


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    PDF 2SK3018 100mA) 02M45

    2SK3018

    Abstract: No abstract text available
    Text: 2SK3018W N-Channel POWER MOSFET 3 DRAIN P b Lead Pb -Free 3 1 2 1 GATE Description: *Gate Protection Diode * Low on-resistance. * Fast switching speed. * Low voltage drive (2.5V) makes this device ideal for portable equipment. * Easily designed drive circuits.


    Original
    PDF 2SK3018W OT-323 SC-70) 30-Oct-09 OT-323 2SK3018

    2SK3018

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SK3018 Features • • • • • • • • • • • • Low ON-Resistance Low Input Capacitance Low Voltage drive makes this device idipmenteal for portable equipment


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    PDF 2SK3018 OT-323 OT-323, MIL-STD-202, 2SK3018

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate MOSFETS 2SK3018 N-channel MOSFET SOT-323 FEATURES z Low on-resistance z Fast switching speed z Low voltage drive makes this device ideal for portable equipment z Easily designed drive circuits


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    PDF OT-323 2SK3018 OT-323

    Untitled

    Abstract: No abstract text available
    Text: WILLAS FM120-M+ 2SK3018WT1 THRU FM1200-M+ SOT-323 Plastic-Encapsulate MOSFETS 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse


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    PDF OD-123+ FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH

    2.5V "Power MOSFET"

    Abstract: MOSFET IGSS 100A n-channel mosfet SOT-23 2SK3018 2SK3018 SOT-23
    Text: UNISONIC TECHNOLOGIES CO., LTD UK3018 Preliminary Power MOSFET 2.5V DRIVE SILICON N-CHANNEL MOSFET „ 3 DESCRIPTION SOT-23 The UTC 2SK3018 is a Silicon N-channel MOSFET, designed to minimize on-state resistance while it provides rugged, reliable and fast switching performance. The product is


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    PDF UK3018 OT-23 2SK3018 OT-323 400mA UK3018L UK3018G UK3018-AE3-R UK3018-ALt QW-R502-313 2.5V "Power MOSFET" MOSFET IGSS 100A n-channel mosfet SOT-23 2SK3018 SOT-23

    transistor 171

    Abstract: 2SK3018 transistor DSA0018935
    Text: Transistor Small switching 30V, 0.1A 2SK3018 FFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Low voltage drive (2.5V) makes this device ideal for portable equipment. 4) Easily designed drive circuits. 5) Easy to parallel. FExternal dimensions (Units: mm)


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    PDF 2SK3018 100mA) transistor 171 2SK3018 transistor DSA0018935

    2SK3018 SOT-23

    Abstract: 5V GATE TO SOURCE VOLTAGE MOSFET MOSFET IGSS 100uA 2sk3018 package mosfet vgs 5v n-channel mosfet vgs 3v
    Text: 2SK3018 N-Channel Enhancement Mode MOSFET • Features • External dimensions 1 Low on-resistance. 2) Fast switching speed. 3) Low voltage drive 2.5V) makes this ③ device ideal for portable equipment. ② 4) Easily designed drive circuits. ① 5) Easy to parallel.


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    PDF 2SK3018 100mA) OT-323 OT-23 2SK3018 SOT-23 5V GATE TO SOURCE VOLTAGE MOSFET MOSFET IGSS 100uA 2sk3018 package mosfet vgs 5v n-channel mosfet vgs 3v

    2SK3018

    Abstract: 3018G 2SK3018 UTC
    Text: UNISONIC TECHNOLOGIES CO., LTD UK3018 Preliminary Power MOSFET 2.5V DRIVE SILICON N-CHANNEL MOSFET „ DESCRIPTION The UTC 2SK3018 is a Silicon N-channel MOSFET, designed to minimize on-state resistance while it provides rugged, reliable and fast switching performance. The product is


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    PDF UK3018 2SK3018 400mA UK3018G-AE2-R UK3018G-AL3-R OT-23-3 OT-323 QW-R502-313 3018G 2SK3018 UTC

    Untitled

    Abstract: No abstract text available
    Text: 2SK3018 Transistor 2.5V Drive Nch MOS FET 2SK3018 zExternal dimensions Unit : mm zStructure Silicon N-channel MOSFET UMT3 2.0 0.9 0.2 0.3 0.7 1.25 (1) (2) 0.1Min. zApplications Interfacing, switching (30V, 100mA) 2.1 (3) 0.65 0.65 1.3 zFeatures 1) Low on-resistance.


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    PDF 2SK3018 100mA) 2SK3018

    2SK3018

    Abstract: No abstract text available
    Text: UM6K1N Transistors 2.5V Drive Nch+Nch MOS FET UM6K1N zStructure Silicon N-channel MOS FET zExternal dimensions Unit : mm UMT6 2.0 0.9 1.3 0.65 0.65 0.7 (5) (4) (6) 1.25 2.1 1pin mark (3) (1) (2) 0.2 0.15 0.1Min. zFeatures 1) Two 2SK3018 transistors in a single UMT package.


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    PDF 2SK3018 100mA)

    2SK3018 SOT-23

    Abstract: equivalent smd mosfet 2SK3018 n-channel mosfet SOT-23 smd mosfet POWER MOSFET Rise Time 1 ns mosfet Rise time 2 ns 100 V
    Text: MOSFET SMD Type N-Channel MOSFET 2SK3018 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 ● Low on-resistance. +0.1 1.3-0.1 +0.1 2.4-0.1 • Features 0.4 3 1 ● Fast switching speed. 0.55 Drain 2 +0.1 0.95-0.1 +0.1 1.9-0.1 ● Drive circuits can be simple. +0.1


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    PDF 2SK3018 OT-23 2SK3018 SOT-23 equivalent smd mosfet 2SK3018 n-channel mosfet SOT-23 smd mosfet POWER MOSFET Rise Time 1 ns mosfet Rise time 2 ns 100 V

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate MOSFETS 2SK3018 N-channel MOSFET SOT-323 FEATURES z Low on-resistance z Fast switching speed z Low voltage drive makes this device ideal for portable equipment z Easily designed drive circuits


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    PDF OT-323 2SK3018 OT-323 100mA

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate MOSFETS UM6K1N SOT-363 Dual N-channel MOSFET FEATURES 1 Two 2SK3018 transistors in a package. 2) The MOS FET elements are independent, eliminating mutual interference. 3) Mounting cost and area can be cut in half.


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    PDF OT-363 OT-363 2SK3018

    Untitled

    Abstract: No abstract text available
    Text: UM6K1N Transistors 2.5V Drive Nch+Nch MOS FET UM6K1N zStructure Silicon N-channel MOS FET zExternal dimensions Unit : mm UMT6 2.0 0.9 1.3 0.65 0.65 0.7 (5) (4) (6) 1.25 2.1 1pin mark (3) (1) (2) 0.2 0.1Min. zFeatures 1) Two 2SK3018 transistors in a single UMT package.


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    PDF 2SK3018 100mA)