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    Part ECAD Model Manufacturer Description Download Buy
    2SK3211STR-E Renesas Electronics Corporation Nch Single Power Mosfet 200V 25A 75Mohm LDPAK(S)-(1)/To-263 Visit Renesas Electronics Corporation
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    2SK3211 Price and Stock

    NEC Electronics Group 2SK3211-90STR-E

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    Quest Components 2SK3211-90STR-E 638
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    2SK3211 Datasheets (14)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK3211 Hitachi Semiconductor Silicon NPN Triple Diffused Original PDF
    2SK3211 Hitachi Semiconductor Silicon N Channel MOS FET High Speed Power Switching Original PDF
    2SK3211 Renesas Technology Silicon N Channel MOS FET High Speed Power Switching Original PDF
    2SK3211L Hitachi Semiconductor Silicon N Channel MOS FET High Speed Power Switching Original PDF
    2SK3211(L) Renesas Technology Silicon N Channel MOS FET High Speed Power Switching Original PDF
    2SK3211L Renesas Technology Silicon N Channel MOS FET High Speed Power Switching Original PDF
    2SK3211L Renesas Technology MOSFET, Switching; VDSS (V): 200; ID (A): 25; Pch : 100; RDS (ON) typ. (ohm) @10V: 0.06; RDS (ON) typ. (ohm) @4V[4.5V]: 0.065; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2420; toff ( us) typ: 0.59; Package: LDPAK (L) Original PDF
    2SK3211L-E Renesas Technology Silicon N Channel MOS FET High Speed Power Switching Original PDF
    2SK3211S Hitachi Semiconductor Silicon N Channel MOS FET High Speed Power Switching Original PDF
    2SK3211(S) Renesas Technology Silicon N Channel MOS FET High Speed Power Switching Original PDF
    2SK3211S Renesas Technology Silicon N Channel MOS FET High Speed Power Switching Original PDF
    2SK3211S Renesas Technology MOSFET, Switching; VDSS (V): 200; ID (A): 25; Pch : 100; RDS (ON) typ. (ohm) @10V: 0.06; RDS (ON) typ. (ohm) @4V[4.5V]: 0.065; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2420; toff ( us) typ: 0.59; Package: LDPAK (S)- (1) Original PDF
    2SK3211S Renesas Technology Silicon N Channel MOS FET High Speed Power Switching Original PDF
    2SK3211STL-E Renesas Technology Silicon N Channel MOS FET High Speed Power Switching Original PDF

    2SK3211 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    D1378

    Abstract: 2SK3211 2SK3221
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3221 SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The 2SK3221 is N-channel DMOS FET device that features a PART NUMBER PACKAGE 2SK3211 Isolated TO-220 low gate charge and excellent switching characteristics, and


    Original     		PDF 2SK3221 2SK3221 2SK3211 O-220 O-220 D1378 2SK3211

    2SK3211

    Abstract: 2SK3211L-E 2SK3211STL-E PRSS0004AE-A
    Text: 2SK3211 L , 2SK3211(S) Silicon N Channel MOS FET High Speed Power Switching REJ03G1091-0400 Rev.4.00 May 15, 2006 Features • Low on-resistance RDS = 60 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004AE-A


    Original     		PDF 2SK3211 REJ03G1091-0400 PRSS0004AE-A PRSS0004AE-B 2SK3211L-E 2SK3211STL-E PRSS0004AE-A

    2SK3211

    Abstract: 2SK3211L-E 2SK3211STL-E PRSS0004AE-A
    Text: 2SK3211 L , 2SK3211(S) Silicon N Channel MOS FET High Speed Power Switching REJ03G1091-0300 (Previous: ADE-208-761A) Rev.3.00 Sep 07, 2005 Features • Low on-resistance RDS = 60 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source


    Original     		PDF 2SK3211 REJ03G1091-0300 ADE-208-761A) PRSS0004AE-A PRSS0004AE-B 2SK3211L-E 2SK3211STL-E PRSS0004AE-A

    2SK3211

    Abstract: Hitachi DSA00310
    Text: 2SK3211 L , 2SK3211(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-761A (Z) 2nd. Edition February 1999 Features • Low on-resistance RDS = 60 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source 2SK3211


    Original     		PDF 2SK3211 ADE-208-761A 2SK3211 Hitachi DSA00310

    Hitachi DSA0076

    Abstract: 2SK3211
    Text: 2SK3211 L , 2SK3211(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-761A (Z) 2nd. Edition Feb. 1999 Features • Low on-resistance R DS = 60 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline


    Original     		PDF 2SK3211 ADE-208-761A 2SK3211 Hitachi DSA0076

    2SK3211

    Abstract: No abstract text available
    Text: 2SK3211 L ,2SK3211(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-761(Z) Target Specification, 1st. Edition Dec. 1, 1998 Features • Low on-resistance R DS =60mΩ typ. • High speed switching • 4V gate drive device can be driven from 5V source


    Original     		PDF 2SK3211 ADE-208-761

    2SK3221

    Abstract: nec 2501 2SK3211 D1378
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    2SK3235

    Abstract: 2SK3379 Hitachi DSA00276 HAT1040T 2SJ517 2SK1835 TO220CFM 2SK3421 HAT1053
    Text: HAT2038R/HAT2038RJ Silicon N Channel Power MOS FET High Speed Power Switching ADE-208-666C Z 4th. Edition Feb. 1999 Features • • • • For Automotive Application ( at Type Code “J “) Low on-resistance Capable of 4 V gate drive High density mounting


    Original     		PDF HAT2038R/HAT2038RJ ADE-208-666C HAT2038R HAT2038RJ pdf\7420e HAT1044M HAT1053M 2SK3235 2SK3379 Hitachi DSA00276 HAT1040T 2SJ517 2SK1835 TO220CFM 2SK3421 HAT1053

    2SK3211

    Abstract: No abstract text available
    Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    7054F

    Abstract: BC564A HA13563 AC123A HITACHI microcontroller H8 534 manual IC 74LS47 AC538 BC245A 2SK3235 HA13557
    Text: INDEX General General Information Semiconductor Packages Sales Locations Microcontroller Microcontroller General MultiChipModules Smart Card Micro. Overview Micro. Shortform Micro. Hardware Manual Micro. Program. Manual Micro. Application Notes LCD Controller / Driver


    Original     		PDF 2sc4537 2sc454. 2sc4591 2sc4592 2sc4593 2sc460. 2sc4628 2sc4629 2sc4643 2sc4680 7054F BC564A HA13563 AC123A HITACHI microcontroller H8 534 manual IC 74LS47 AC538 BC245A 2SK3235 HA13557

    1002ds

    Abstract: 6020v4 TRANSISTOR BJ 131-6 2SC 8550 transistor 2sc1417 HITACHI 08122B transistor h945 6030v4 2SC 8050 25aaj
    Text: 2004.1 Renesas Transistors/Thyristors/Triacs Status List Topic—High Frequency Silicon Bipolar Transistor "2SC5998" •············································································ 2


    Original     		PDF 2SC5998" C5139 2SC5247 2SC5907 2SD1504 2SJ361 2SK439 2SK494 2SK3349 BCR5KM-12L 1002ds 6020v4 TRANSISTOR BJ 131-6 2SC 8550 transistor 2sc1417 HITACHI 08122B transistor h945 6030v4 2SC 8050 25aaj

    rjh3047

    Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055
    Text: 2007.12 Renesas Discrete General Catalog Transistor/Diode/ Triac/ Thyristor www.renesas.com Triacs and Thyristors Small-Signal Transistors Power Transistor Renesas discrete devices: extending the limits Advanced electronic equipment requires larger data processing


    Original     		PDF REJ01G0001-0400 rjh3047 rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055

    2SC 8550

    Abstract: 6020v4 6030v4 HITACHI 08122B 2SC 8050 HITACHI 08123B transistor h945 H945 TRANSISTOR c 6030v4 2sk3545
    Text: Status List HITACHI TRANSISTOR/GaAsIC Vol.16-4 2002.11 Topic - Hitachi High Frequency Bipolar Transistors . 2 Index . 3, 4


    Original     		PDF 3SK309 3SK317 3SK318 BB101C BB102C BB301C BB302C BB304C BB305C BB501C 2SC 8550 6020v4 6030v4 HITACHI 08122B 2SC 8050 HITACHI 08123B transistor h945 H945 TRANSISTOR c 6030v4 2sk3545

    rjp3053

    Abstract: RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009
    Text: 2007.10 Renesas Transistors/Thyristors/Triacs Status List Topic_New-Generation Power MOS FET: Low Loss MOS FET " JET " 10th Gen. - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3 to 5


    Original     		PDF REJ16G0001-1900 rjp3053 RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009

    2SK3211

    Abstract: 2SK3211L-E 2SK3211STL-E PRSS0004AE-A
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    1002ds

    Abstract: 4008ZB 2SC 9012 MP 1009 es 2SC 8050 20AAJ-8H 6020v4 2SC1417 2SC 8550 cr3as
    Text: 2004.4 Renesas Transistors/Thyristors/Triacs Status List Topic—CMFPAK-6 Series of Power MOS FETs for Portable Devices •·······················································2 Index ······················································································3 to 5


    Original     		PDF 24EMP BRC124ETP BRC143ETP BRC144ECM CR3KM-12 FS10KM-6 FS10VS-6 FS16KM-6 FS16VS-6 HAT3017R 1002ds 4008ZB 2SC 9012 MP 1009 es 2SC 8050 20AAJ-8H 6020v4 2SC1417 2SC 8550 cr3as

    TO220CFM

    Abstract: TO220FM HAT1053M 2sk3148 2SK2978 hat2070 TO-220aB rr Hitachi DSA00276 2SK2096 HAT1040T
    Text: HAT1024R Silicon P Channel Power MOS FET High Speed Power Switching ADE-208-476G Z 8th. Edition Jun. 1997 Features • • • • Low on-resistance Capable of 4 V gate drive Low drive current High density mounting Outline SOP–8 8 5 7 6 3 1 2 4 5 6 D D


    Original     		PDF HAT1024R ADE-208-476G pdf\7420e HAT1044M HAT1053M HAT2053M HAT2054M TO220CFM TO220FM 2sk3148 2SK2978 hat2070 TO-220aB rr Hitachi DSA00276 2SK2096 HAT1040T