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    2SK330 Search Results

    2SK330 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SK3307-A Renesas Electronics Corporation Nch Single Power Mosfet 60V 70A 9.5Mohm Mp-88/To-3P Visit Renesas Electronics Corporation
    2SK3305-AZ Renesas Electronics Corporation Switching N-Channel Power Mosfet Visit Renesas Electronics Corporation
    2SK3306-AZ Renesas Electronics Corporation Switching N-Channel Power Mosfet Visit Renesas Electronics Corporation
    2SK3306B-S17-AY Renesas Electronics Corporation Switching N-Channel Power Mosfet, MP-45F, /Tube Visit Renesas Electronics Corporation
    2SK3304-A Renesas Electronics Corporation Switching N-Channel Power Mosfet Visit Renesas Electronics Corporation
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    2SK330 Price and Stock

    Rochester Electronics LLC 2SK3306B-S17-AY

    N-CHANNEL POWER MOSFET
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    DigiKey 2SK3306B-S17-AY Bulk 8,000 142
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    Rochester Electronics LLC 2SK3305B-S19-AY

    N-CHANNEL POWER MOSFET
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    DigiKey 2SK3305B-S19-AY Bulk 3,835 325
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    Rochester Electronics LLC 2SK3305-S-AZ

    N-CHANNEL POWER MOSFET
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    DigiKey 2SK3305-S-AZ Bulk 884 325
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    Toshiba America Electronic Components 2SK3309(Q)

    MOSFET N-CH 450V 10A TO220FL
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    Quest Components 2SK3309(Q) 80
    • 1 $2.355
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    Toshiba America Electronic Components 2SK3309(TE24L,Q)

    MOSFET N-CH 450V 10A TO220SM
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    Find more 2SK330 price and stock on Findchips.com

    2SK330 Datasheets (42)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK330 Toshiba Field Effect Transistor Silicon N Channel Junction Type Original PDF
    2SK330 Unknown Scan PDF
    2SK330 Unknown FET Data Book Scan PDF
    2SK330 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SK330 Toshiba FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE Scan PDF
    2SK330 Toshiba Silicon N channel field effect transistor for audio amplifier, analog switch, constant current and impedance converter applications Scan PDF
    2SK330 Toshiba TO-92 Mini Package Transistors / Junction FETs Scan PDF
    2SK3300 NEC Semiconductor Selection Guide Original PDF
    2SK3300 NEC SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE Original PDF
    2SK3301 Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF
    2SK3301 Toshiba FETs - Nch 700V Original PDF
    2SK3301 Toshiba Field Effect Transistor Silicon N Channel MOS Type (Pi-MOS III) Scan PDF
    2SK3301 Toshiba Silicon N-channel MOS type field effect transistor for high speed, high voltage switching, switching regulator, DC-DC converter and motor drive applications Scan PDF
    2SK3301(2-7B1B) Toshiba 2SK3301 - TRANSISTOR 1 A, 900 V, 20 ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, 2-7B1B, SC-64, 3 PIN, FET General Purpose Power Original PDF
    2SK3301(2-7B2B) Toshiba 2SK3301 - TRANSISTOR 1 A, 900 V, 20 ohm, N-CHANNEL, Si, POWER, MOSFET, 2-7B2B, SC-64, 3 PIN, FET General Purpose Power Original PDF
    2SK3301(2-7B3B) Toshiba 2SK3301 - TRANSISTOR 1 A, 900 V, 20 ohm, N-CHANNEL, Si, POWER, MOSFET, 2-7B3B, 3 PIN, FET General Purpose Power Original PDF
    2SK3301(2-7J1B) Toshiba 2SK3301 - TRANSISTOR 1 A, 900 V, 20 ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, 2-7J1B, SC-64, 3 PIN, FET General Purpose Power Original PDF
    2SK3301(Q) Toshiba 2SK3301 - MOSFET N-CH 900V 1A SC-64 Original PDF
    2SK3301(TE16L1,NQ) Toshiba 2SK3301 - MOSFET N-CH 900V 1A SC-64 Original PDF
    2SK3302 Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF

    2SK330 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SK3309

    Abstract: No abstract text available
    Text: 2SK3309 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3309 Switching Regulator Applications • · · · Unit: mm Low drain-source ON resistance: RDS (ON) = 0.48 Ω (typ.) High forward transfer admittance: |Yfs| = 4.3 S (typ.) Low leakage current: IDSS = 100 µA (max) (VDS = 450 V)


    Original     		PDF 2SK3309 2SK3309

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3307 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION The 2SK3307 is N-channel MOS Field Effect Transistor PART NUMBER PACKAGE 2SK3307 TO-3P designed for high current switching applications.


    Original     		PDF 2SK3307 2SK3307

    2SK3305

    Abstract: 2SK3305-S 2SK3305-ZJ MP-25
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3305 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION The 2SK3305 is N-Channel DMOS FET device that features a PART NUMBER PACKAGE 2SK3305 TO-220AB 2SK3305-S TO-262 2SK3305-ZJ TO-263


    Original     		PDF 2SK3305 2SK3305 O-220AB 2SK3305-S O-262 2SK3305-ZJ O-263 O-220AB) 2SK3305-S 2SK3305-ZJ MP-25

    2SK3306

    Abstract: MP-45F D14004
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3306 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION The 2SK3306 is N-Channel DMOS FET device that features PART NUMBER PACKAGE 2SK3306 Isolated TO-220 MP-45F a low gate charge and excellent switching characteristics, and


    Original     		PDF 2SK3306 2SK3306 O-220 MP-45F) O-220) O-220 MP-45F D14004

    Toshiba 2SJ

    Abstract: No abstract text available
    Text: 2SK330 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK330 For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications • High breakdown voltage: VGDS = −50 V • High input impedance: IGSS = −1 nA max (VGS = −30 V)


    Original     		PDF 2SK330 2SJ105 Toshiba 2SJ

    Untitled

    Abstract: No abstract text available
    Text: 2SK3309 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3309 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.48 Ω (typ.) High forward transfer admittance: |Yfs| = 4.3 S (typ.)


    Original     		PDF 2SK3309

    K3302

    Abstract: transistor no k3302
    Text: 2SK3302 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3302 Switching Regulator, DC-DC Converter Applications • Low drain-source ON resistance: RDS (ON) = 11.5 Ω (typ.) • High forward transfer admittance: |Yfs| = 0.4 S (typ.)


    Original     		PDF 2SK3302 K3302 transistor no k3302

    2SK3307

    Abstract: MP-88
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3307 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION The 2SK3307 is N-channel MOS Field Effect Transistor PART NUMBER PACKAGE 2SK3307 TO-3P designed for high current switching applications.


    Original     		PDF 2SK3307 2SK3307 MP-88

    2SK330

    Abstract: 2SJ105 Toshiba 2SJ 2SK3303
    Text: 2SK330 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK330 For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications • High breakdown voltage: VGDS = −50 V • High input impedance: IGSS = −1 nA max (VGS = −30 V)


    Original     		PDF 2SK330 2SJ105 2SK330 2SJ105 Toshiba 2SJ 2SK3303

    2SK3304

    Abstract: MP-88
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3304 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3304 is N-Channel MOS FET device that features a Low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply.


    Original     		PDF 2SK3304 2SK3304 MP-88

    2SK3307

    Abstract: MP-88
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3307 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3307 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS on 1 = 9.5 mΩ MAX. (VGS = 10 V, ID = 35 A)


    Original     		PDF 2SK3307 2SK3307 MP-88

    2SK3304

    Abstract: D1399 MP-88 DSA002270
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3304 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION The 2SK3304 is N-Channel MOS FET device that features a PART NUMBER PACKAGE 2SK3304 TO-3P Low gate charge and excellent switching characteristics, and


    Original     		PDF 2SK3304 2SK3304 D1399 MP-88 DSA002270

    D1412

    Abstract: 2SK3307 MP-88
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3307 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION The 2SK3307 is N-channel MOS Field Effect Transistor PART NUMBER PACKAGE 2SK3307 TO-3P designed for high current switching applications.


    Original     		PDF 2SK3307 2SK3307 D1412 MP-88

    transistor no k3302

    Abstract: 2SK3302 K3302
    Text: 2SK3302 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3302 Switching Regulator and DC-DC Converter Applications • Low drain-source ON resistance: RDS (ON) = 11.5 Ω (typ.) • High forward transfer admittance: |Yfs| = 0.4 S (typ.)


    Original     		PDF 2SK3302 transistor no k3302 2SK3302 K3302

    2SK3305

    Abstract: No abstract text available
    Text: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR 2SK3305 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE PACKAGE DRAWING Unit: mm DESCRIPTION 4.8 MAX. φ 3.6±0.2 FEATURES 4 • Low gate charge: 1.3±0.2 10.0 5.9 MIN. voltage applications such as switching power supply, AC adapter.


    Original     		PDF 2SK3305 2SK3305

    2SK3303

    Abstract: 2SJ105 2SK330 Toshiba 2SJ
    Text: 2SK330 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK330 For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications • Unit: mm High breakdown voltage: VGDS = −50 V · High input impedance: IGSS = −1 nA max (VGS = −30 V)


    Original     		PDF 2SK330 2SJ105 2SK3303 2SJ105 2SK330 Toshiba 2SJ

    k3301

    Abstract: No abstract text available
    Text: 2SK3301 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOSIII 2SK3301 Switching Regulatorand DC-DC Converter Applications • Low drain-source on-resistance: RDS(ON) = 15 Unit: mm (typ.) • High forward transfer admittance: |Yfs| = 0.65 S (typ.)


    Original     		PDF 2SK3301 k3301

    2SK330

    Abstract: 2SJ105 2sk3303
    Text: 2SK330 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK330 For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications • High breakdown voltage: VGDS = −50 V • High input impedance: IGSS = −1 nA max (VGS = −30 V)


    Original     		PDF 2SK330 2SJ105 2SK330 2SJ105 2sk3303

    transistor no k3302

    Abstract: No abstract text available
    Text: 2SK3302 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3302 Switching Regulator and DC-DC Converter Applications • Low drain-source ON resistance: RDS (ON) = 11.5 Ω (typ.) • High forward transfer admittance: |Yfs| = 0.4 S (typ.)


    Original     		PDF 2SK3302 transistor no k3302

    k3301

    Abstract: 2SK3301
    Text: 2SK3301 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIII 2SK3301 Switching Regulatorand DC-DC Converter Applications • Low drain-source ON resistance: RDS (ON) = 15 Ω (typ.) • High forward transfer admittance: |Yfs| = 0.65 S (typ.)


    Original     		PDF 2SK3301 k3301 2SK3301

    2SK3303

    Abstract: 2SK330 2SJ105 Toshiba 2SJ
    Text: 2SK330 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK330 For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications • Unit: mm High breakdown voltage: VGDS = −50 V • High input impedance: IGSS = −1 nA max (VGS = −30 V)


    Original     		PDF 2SK330 2SJ105 2SK3303 2SK330 2SJ105 Toshiba 2SJ

    Untitled

    Abstract: No abstract text available
    Text: 0001492 115296348 I S/ 4 89 / 00- 06 - 29- 14 :05/ P. 0 0 2 2SK3309 [TENTATIVE T O S H I B A TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE /r-MOSV 2SK33O9 HIGH SPEED,HIGH VOLTAGE SWITCHING APPLICATIONS SWITCHING REGULATOR APPLICATIONS INDUSTRIAL APPLICATIONS


    OCR Scan     		PDF 2SK3309 2SK33O9 DS-10V,

    2SK3301

    Abstract: No abstract text available
    Text: TOSHIBA 2SK3301 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSIII 2SK3301 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm SWITCHING REGULATOR, DC-DC CONVERTER APPLICATIONS • Low Drain-Source ON Resistance


    OCR Scan     		PDF 2SK3301 VDD-400V, 2SK3301

    Untitled

    Abstract: No abstract text available
    Text: T O S H IB A 2SK3301 TO SHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL M O S TYPE tt-M O SH I 2SK3301 HIGH SPEED, HIGH VOLTAGE SW ITCHING APPLICATIONS INDUSTRIAL APPLICATIONS SW ITCHING REGULATOR, DC-DC CONVERTER APPLICATIONS • Low Drain-Source ON Resistance


    OCR Scan     		PDF 2SK3301