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    2SK349 Search Results

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    2SK349 Price and Stock

    Rochester Electronics LLC 2SK3491-E

    NCH 4V DRIVE SERIES
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    DigiKey 2SK3491-E Bulk 468
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    Rochester Electronics LLC 2SK3495-AZ

    MOSFET N-CH
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    DigiKey 2SK3495-AZ Bulk 2,219
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    Rochester Electronics LLC 2SK3491-TL-E

    NCH 4V DRIVE SERIES
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    DigiKey 2SK3491-TL-E Bulk 1,402
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    Rochester Electronics LLC 2SK3492-TL-E

    GENERAL PURPOSE TRANSISTOR
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    DigiKey 2SK3492-TL-E Bulk 592
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    onsemi 2SK3491-TL-E

    Trans MOSFET N-CH Si 600V 1A 3-Pin(2+Tab) TP-FA
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    Verical 2SK3491-TL-E 273,000 1,716
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    2SK3491-TL-E 136,500 1,716
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    Rochester Electronics 2SK3491-TL-E 409,500 1
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    2SK349 Datasheets (23)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK349 Hitachi Semiconductor Silicon N-Channel MOS FET, High Speed Power Switching Scan PDF
    2SK349 Hitachi Semiconductor Silicon N-Channel MOSFET Scan PDF
    2SK349 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SK349 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SK349 Unknown FET Data Book Scan PDF
    2SK3490 Sanyo Semiconductor General-Purpose Switching Device Applications Original PDF
    2sk3491 Sanyo Semiconductor Original PDF
    2SK3491 Sanyo Semiconductor N-Channel Silicon MOSFET Original PDF
    2SK3491TP Sanyo Semiconductor N-Channel Silicon MOSFET Original PDF
    2SK3492 Sanyo Semiconductor N CHANNEL MOS SILICON TRANSISTORl Original PDF
    2SK3494 Kexin N-Channel Enhancement Mode MOSFET Original PDF
    2SK3494 Panasonic Power Device - Power MOS FETs Original PDF
    2SK3495 Sanyo Semiconductor N-Channel Silicon MOSFET Original PDF
    2SK3497 Toshiba power MOSFET Original PDF
    2SK3497 Toshiba FETs - Nch 150V Original PDF
    2SK3497 Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF
    2SK3498 Toshiba Transistors - Mosfets Original PDF
    2SK3498 Toshiba Japanese - Transistors - Mosfets Original PDF
    2SK3498 Toshiba DC-DC Converter, Relay Drive and Motor Drive Applications Original PDF
    2SK3498 Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF

    2SK349 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    k3491

    Abstract: K349 2SK3491 2SK349
    Text: Ordering number : ENN6959 2SK3491 N-Channel Silicon MOSFET 2SK3491 Ultrahigh-Speed Switching Applications Features Low ON-resistance. Low Qg. unit : mm 2083B [2SK3491] 2.3 0.5 7.0 5.5 1.5 6.5 5.0 4 1.2 7.5 0.8 1.6 0.85 0.7 0.6 0.5 1 2 1 : Gate 2 : Drain 3 : Source


    Original
    ENN6959 2SK3491 2083B 2SK3491] 2092B k3491 K349 2SK3491 2SK349 PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power MOSFETs 2SK3494 N-channel enhancement mode MOSFET • Features Unit: mm 4.6±0.2 (1.4) 10.5±0.3 ■ Applications 3.0±0.5 0 to 0.5 • For PDP • For high-speed switching 0.6±0.1 10.1±0.3


    Original
    2002/95/EC) 2SK3494 PDF

    K349

    Abstract: 2SK3499
    Text: 2SK3499 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3499 Switching Regulator and DC-DC Converter Applications Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 0.4 Ω (typ.) • High forward transfer admittance: |Yfs| = 8.0 S (typ.)


    Original
    2SK3499 K349 2SK3499 PDF

    2SK3492

    Abstract: D1306
    Text: 2SK3492 注文コード No. N 8 2 7 9 三洋半導体データシート N 2SK3492 N チャネル MOS 型シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長 ・低オン抵抗。 ・超高速スイッチング。 ・4V 駆動。


    Original
    2SK3492 IT09602 IT09605 IT09607 IT09608 IT09609 2SK3492 D1306 PDF

    toshiba marking code transistor

    Abstract: K3497 2SK3497 toshiba 2-16c1b 2SJ618 Toshiba 2SJ
    Text: 2SK3497 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK3497 High Power Amplifier Application Unit: mm z High breakdown voltage: VDSS = 180V z Complementary to 2SJ618 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating


    Original
    2SK3497 2SJ618 toshiba marking code transistor K3497 2SK3497 toshiba 2-16c1b 2SJ618 Toshiba 2SJ PDF

    2SK3492

    Abstract: 70103PA
    Text: 注文コード No. N 0 0 0 0 2SK3492 暫 定 規 格 No. N0000 70103 新 2SK3492 特長 N チャネル MOS 形シリコン電界効果トランジスタ 汎用スイッチングデバイス ・低オン抵抗。 ・超高速スイッチング。 ・4V 駆動。


    Original
    2SK3492 N0000 70103PA 2SK3492 PDF

    jeita sc-65

    Abstract: K3497 2SK3497 2SJ618 SC-65
    Text: 2SK3497 東芝電界効果トランジスタ シリコンNチャネルMOS形 π-MOSV 2SK3497 ○ 低周波電力増幅用 単位: mm VDSS 180 V ゲ ー ト ・ ソ ー ス 間 電 圧 VGSS ±12 V 許 チ 保 注 1: 注 2: 容 DC (注 1) ID 10 A パルス


    Original
    2SK3497 2SJ618 SC-65 2-16C1B 20070701-JA jeita sc-65 K3497 2SK3497 2SJ618 SC-65 PDF

    2sK3496

    Abstract: 2SK3496-01MR
    Text: 2SK3496-01MR FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings mm TO-220F Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply)


    Original
    2SK3496-01MR O-220F dVDS/dt10 2sK3496 2SK3496-01MR PDF

    K349

    Abstract: k3499 2SK3499
    Text: 2SK3499 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3499 Switching Regulator and DC-DC Converter Applications Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 0.4 Ω (typ.) • High forward transfer admittance: Yfs = 8.0 S (typ.)


    Original
    2SK3499 K349 k3499 2SK3499 PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power MOSFETs 2SK3494 N-channel enhancement mode MOSFET • Features Unit: mm 4.6±0.2 (1.4) 10.5±0.3 ■ Applications 3.0±0.5 0 to 0.5 M Di ain sc te on na tin nc ue e/ d • For PDP • For high-speed switching


    Original
    2002/95/EC) 2SK3494 PDF

    2SK3490

    Abstract: 2D2-10
    Text: 2SK3490 Ordering number : EN9085 N-Channel Silicon MOSFET 2SK3490 General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol


    Original
    2SK3490 EN9085 250mm2 2SK3490 2D2-10 PDF

    K3498

    Abstract: K3498 Transistor 2SK3498 transistor k3498 k349
    Text: 2SK3498 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3498 DC-DC Converter, Relay Drive and Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 4.0 Ω (typ.) · High forward transfer admittance: |Yfs| = 0.6 S (typ.)


    Original
    2SK3498 K3498 K3498 Transistor 2SK3498 transistor k3498 k349 PDF

    K3498

    Abstract: 2SK3498 K3498 Transistor K349
    Text: 2SK3498 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3498 DC-DC Converter, Relay Drive and Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 4.0 Ω (typ.) • High forward transfer admittance: Yfs = 0.6 S (typ.)


    Original
    2SK3498 K3498 2SK3498 K3498 Transistor K349 PDF

    2SK3497

    Abstract: k3497 2SJ618 SC-65 K349
    Text: 2SK3497 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK3497 High Power Amplifier Application Unit: mm 2.0 20.5 ± 0.5 9.0 2.0 ± 0.3 1.0 +0.3 -0.25 Rating Unit Drain−source voltage VDSS 180 V Gate−source voltage VGSS ±12


    Original
    2SK3497 2SJ618 2SK3497 k3497 2SJ618 SC-65 K349 PDF

    k3494

    Abstract: 2SK3494
    Text: Power MOSFETs 2SK3494 N-channel enhancement mode MOSFET • Features Unit: mm 4.6±0.2 1.4 10.5±0.3 ■ Applications 3.0±0.5 0 to 0.5 • For PDP • For high-speed switching 0.6±0.1 10.1±0.3 1.4±0.1 1.4±0.1 2.5±0.2 0.8±0.1 2.54±0.3 0 to 0.3 ■ Absolute Maximum Ratings TC = 25°C


    Original
    2SK3494 k3494 2SK3494 PDF

    K3498

    Abstract: K3498 Transistor
    Text: 2SK3498 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSV 2SK3498 DC/DC Converter, Relay Drive and Motor Drive Applications • Unit: mm Low drain-source ON-resistance: RDS (ON) = 4.0 Ω (typ.) • High forward transfer admittance: |Yfs| = 0.6 S (typ.)


    Original
    2SK3498 to150 K3498 K3498 Transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK3499 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3499 Switching Regulator and DC-DC Converter Applications Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 0.4 Ω (typ.) • High forward transfer admittance: |Yfs| = 8.0 S (typ.)


    Original
    2SK3499 to150 PDF

    2SK3492

    Abstract: No abstract text available
    Text: 2SK3492 SPICE PARAMETER Nch MOS FET model : BSIM3V3.2 Parameter Value LEVEL 8 3.2 VERSION VTH0 2.21 NLX 4.70E-07 DVT2 -0.01 UB 1.00E-21 AGS 0.72 1.22E+04 RDSW WINT 0.68 NFACTOR CDSCD PCLM 0.20 DROUT 0.96 PVAG 0.01 MOBMOD 1 CAPMOD 3 CGDO 1.40E-11 CGDL 2.80E-10


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    2SK3492 70E-07 00E-21 40E-11 80E-10 0E-07 90E-07 463904E-6 463904E-12 8E-04 2SK3492 PDF

    K3498

    Abstract: K3498 Transistor 2SK3498
    Text: 2SK3498 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSV 2SK3498 DC/DC Converter, Relay Drive and Motor Drive Applications • Unit: mm Low drain-source ON-resistance: RDS (ON) = 4.0 Ω (typ.) • High forward transfer admittance: |Yfs| = 0.6 S (typ.)


    Original
    2SK3498 K3498 K3498 Transistor 2SK3498 PDF

    2SK3499

    Abstract: K349
    Text: 2SK3499 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3499 Switching Regulator and DC-DC Converter Applications Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 0.4 Ω (typ.) • High forward transfer admittance: |Yfs| = 8.0 S (typ.)


    Original
    2SK3499 2SK3499 K349 PDF

    K3498

    Abstract: K3498 Transistor transistor k3498 2SK3498 K349
    Text: 2SK3498 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3498 DC-DC Converter, Relay Drive and Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 4.0 Ω (typ.) • High forward transfer admittance: |Yfs| = 0.6 S (typ.)


    Original
    2SK3498 K3498 K3498 Transistor transistor k3498 2SK3498 K349 PDF

    k3498

    Abstract: 2SK3498 K3498 Transistor
    Text: 2SK3498 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSV 2SK3498 DC/DC Converter, Relay Drive and Motor Drive Applications • Low drain-source ON-resistance: RDS (ON) = 4.0 Ω (typ.) • High forward transfer admittance: |Yfs| = 0.6 S (typ.)


    Original
    2SK3498 k3498 2SK3498 K3498 Transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: Ordering num ber : ENN6970~j N-Channel Silicon MOSFET 2SK3495 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON-resistance. u n it : mm • Ullrahigh-speed switching. 2087A • 4V drive. [2SK3495] • Meets radial taping. 2.5 1. 4 5 ,


    OCR Scan
    ENN6970 2SK3495 2SK3495] PDF

    2sk350 hitachi

    Abstract: 2SK350 2SK349 KDS -5a
    Text: 2SK349.2SK350 yU=3> S IL IC O N N -C H A N N E L M OS FET S FET HIGH SPEED POW ER S W IT C H IN G 5.0max. 1.5 1. Y 2. y i " y : D ra in — I- ! G a te (~7 7 y v 3. V — * (F la n g e ) • So u rce (D im e n s io n s in mm) (T O -3P ) ABSOLUTE MAXIMUM RATINGS (Ta= 25'C)


    OCR Scan
    2SK349 2SK350 Vgs-15V* 2sk350 hitachi KDS -5a PDF