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    Rubycon Corporation 500USK820MEFCSN35X60

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    Rubycon Corporation 400USK820MEFCSN30X50

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    Rubycon Corporation 400USK820MEFCSN35X40

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    Rubycon Corporation 420USK820MEFCSN35X45

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    Rubycon Corporation 420USK820MEFCSN30X55

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    2SK82 Datasheets (36)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SK820 NEC Semiconductor Selection Guide 1995 Original PDF
    2SK820 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SK820 Unknown FET Data Book Scan PDF
    2SK821 NEC Semiconductor Selection Guide 1995 Original PDF
    2SK821 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SK821 Unknown FET Data Book Scan PDF
    2SK821 NEC Fast switching N-channel silicon MOS field effect power transistor. Scan PDF
    2SK822 NEC Semiconductor Selection Guide 1995 Original PDF
    2SK822 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SK822 Unknown FET Data Book Scan PDF
    2SK823 NEC Semiconductor Selection Guide 1995 Original PDF
    2SK823 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SK823 Unknown FET Data Book Scan PDF
    2SK823 NEC Fast switching N-channel silicon MOS field effect power transistor. Scan PDF
    2SK824 NEC Semiconductor Selection Guide 1995 Original PDF
    2SK824 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SK824 Unknown FET Data Book Scan PDF
    2SK824 NEC N-CHANNEL POWER MOS FET Scan PDF
    2SK825 NEC Semiconductor Selection Guide 1995 Original PDF
    2SK825 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF

    2SK82 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 2SK829 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)500 V(BR)GSS (V)20 I(D) Max. (A)15 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)40 @Pulse Width (s) (Condition)100u Absolute Max. Power Diss. (W)150# Minimum Operating Temp (øC)


    Original     		PDF 2SK829

    Untitled

    Abstract: No abstract text available
    Text: 2SK825 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)450 V(BR)GSS (V)20 I(D) Max. (A)15 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)40 @Pulse Width (s) (Condition)100u Absolute Max. Power Diss. (W)150# Minimum Operating Temp (øC)


    Original     		PDF 2SK825

    Untitled

    Abstract: No abstract text available
    Text: 2SK822 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)250 V(BR)GSS (V)20 I(D) Max. (A)22 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)90 Minimum Operating Temp (øC)


    Original     		PDF 2SK822

    2sk82

    Abstract: ifoc 2SK823 JI 32
    Text: M O S Field E ffe ct P o w e r T ran sis to r 2SK823 N f t ^ N 7 -M O S I 2S K 823Ü , l f f l > h ^ > * T7 — MOS F E T ffii/CM S < , X - i -? -f > FET £|-5f£[21 W Ì : mm T ? f • f l T Ü >), ÏÜJSÎÈX ^ <y -f > r « - i i 4 . 7 MA X . 15 . 7 M A X .


    OCR Scan     		PDF 2SK823 2sk82 ifoc 2SK823 JI 32

    2SK828

    Abstract: RQ100 2sk82 transistor 3884
    Text: NEC N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR ELECTRON DEVICE 2SK828 DESCRIPTION The 2SK828 is N-channel MOS Field Effect Power PACKAGE D IM EN SIO N S Transistor designed for switching power supplies DC-DC in m illim e te rs inches converters. FEATURES


    OCR Scan     		PDF 2SK828 2SK828 1987M RQ100 2sk82 transistor 3884

    2sk82

    Abstract: LM 3883 2SK826
    Text: NEC N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR ELECTRON DEVICE 2SK826 D E S C R IP T IO N The 2 S K 82 6 is N-channel MOS Field Effect Power P A C K A G E D IM E N S IO N S Transistor designed for switching power supplies, DC-DC in m illim eters inches


    OCR Scan     		PDF 2SK826 2SK826 2sk82 LM 3883

    2SK822

    Abstract: 2sk82
    Text: M MOS o s M u n t t o ^ r ? - F ie ld E ffe ct P o w e r T ra n s is to r 2SK822 N ft^ ;U / '° 7 j i m 2S K8 2 2 i, FET m N f t i w i / X > A > X S > h M ''*'r7 — MOS F E T V * V ffiÎÆ ^ fS < , 7 f > / m # -M O S X ' i v f- > (^ - ii 0 , it lH iS x ^


    OCR Scan     		PDF 2SK822li, TC-7502 2SK822 2sk82

    lm575

    Abstract: 2SK827 transistor DK RN lm5752 F1012
    Text: N E C ELECTRONICS INC "t û 6427525 N E C ELECTRONICS DEI INC b45755S 98D MOS D O n O O l 19001 F I E L D D E F F E C T ELECTRON DP/ICS 7 | T '- " 17-13 T R A N S I S T O R 2SK827 . F A S T S W I T C H I N G N - C H A N N E L S I L I C O N POW ER MOS F E T


    OCR Scan     		PDF b4275ES Q11DD1 2SK827 T-39-13 LM57525 DD11D04 JS71CS J2263S lm575 2SK827 transistor DK RN lm5752 F1012

    for1a

    Abstract: 2sk82 me75es JEC ELECTRONICS bms75g5 U511-1
    Text: Tfl D Ë J ti4E7S5S □ D i a n a 6427525 N E C 3 ELECTRONICS ’v. ' 98D INC - •*' 18993 * ' ••*“- .1 MOS D *./*.•Vf'-^ -•* ' F I E L D~ E F F E C T 'T R A X S I S T C F, ELECTH0N DEVICE 2SK82 F A S T S W I T C H I N G N - C H A N N E L ' S I L I CON


    OCR Scan     		PDF 23K82 73ANS U5--111 NECTCKJ22S3S for1a 2sk82 me75es JEC ELECTRONICS bms75g5 U511-1

    pu45

    Abstract: 2SK821
    Text: NEC N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR EIECTRON DEVICE 2SK821 DESCRIPTION The 2SK821 is N-channel MOS Field E ffect Power Transistor PACKAGE DIMENSIONS designed fo r sw itching power supplies, DC-DC converters. FEATURES In m illim e te rs inches


    OCR Scan     		PDF 2SK821 2SK821 1987M pu45

    transistor Bf 444

    Abstract: transistor bf 324 TC-6305 3e tRANSISTOR 2SK824 T108
    Text: M O S Field E ffe ct P o w e r T r a n s is to r N-7-+-^Mw<,7 — MOS F E T 7 A I i f f l 2SK824Ü, N f t :f / P - x > A > x ^ > l ' f / N , 7 - M O S FET W & m W i : mm - c & v , WHS D C -D C a •y j-y rm w , ft i t ° V DSS = 4 5 0 V , O'fS'+yffiiÆ


    OCR Scan     		PDF 2SK824 2SK824Ã 1X10857 transistor Bf 444 transistor bf 324 TC-6305 3e tRANSISTOR 2SK824 T108

    2SK821

    Abstract: AJE TI TEA-509 F111 100-1000W EIR94
    Text: r — z S 7 • 5 / — h M O S ï ï 2 ,B # & j m ' < r7 - M O S Field E ffe c t P o w e r T ra n s is to r 2SK821 MOS F E T — i i f f 2SK821 i, ffifitM S < , F X -Î7 f > l FETT"^> 7 'fë 14 * fi l n t iJ ' , B 0 i X - i v f > W fê 'A \ m . (-^ -Ü


    OCR Scan     		PDF 2SK821 2SK821 AJE TI TEA-509 F111 100-1000W EIR94

    for1a

    Abstract: eic73 2SK821
    Text: 64 27 525 N E C ELEC TRO NIC S INC 98D 18989 3 tiME7S2S □□IfiTflT 1 |"“ ••. . .,.r NEQm ' w ELECTRON DEVICE MO S y FIEL D P A C K A G E D IM E N S IO N S {Unit: mm _ _ _ _ _ _ " Jl T R A N S I S T G ?. 2SK821 / FAST S W IT C H IN G ft-CHANNEL


    OCR Scan     		PDF bME7555 2SK821 J22566 for1a eic73 2SK821

    FS 0245

    Abstract: 2SK828
    Text: M N f - ^ U - z ^ - M O O S S F F ie ld E E f f e c t P o w e r T r a n s is t o r T i i f f l 2SK828 ü , N j -ï ’ ï X - t > tm v î& 7 f y / m < , x D c - D c j 4 u ", * - y h i f P ^ V - MOS FET y => y ^ i s ' , ftw m m t ’• m m ) 4 - ^ s i à T - t o


    OCR Scan     		PDF 2SK828Ã TC-63070 FS 0245 2SK828

    2SK820

    Abstract: TD4001 TD400
    Text: DATA SHEET Preliminary NEC N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR ELECTRON DEVICE DESCRIPTION 2SK 820 The 2SK820 is N-channel MOS Field E ffect Power PACKAGE DIM EN SIO N S Transistor designed fo r sw itching power supplies, DC-DC in m illim e te rs (inches)


    OCR Scan     		PDF 2SK820 2SK820 1987M TD4001 TD400

    K825

    Abstract: 2SK825
    Text: NEC N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR ELECTRON DEVICE 2SK825 DESCRIPTION The 2SK825 is N-channel MOS Field Effect Power Transistor PACKAGE DIMENSIONS designed fo r switching power supplies, DC-DC converters. FEATURES in m illim e te rs inches «Suitable fo r switching power supplies, actuater controls,


    OCR Scan     		PDF 2SK825 1987M K825

    2SK827

    Abstract: No abstract text available
    Text: NEC N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR ELECTRON DEVICE 2SK827 DESCRIPTION The 2 S K 8 2 7 is N -channel MOS Field E ffe c t Pow er T ransisto r PACKAGE DIMENSIONS designed fo r s w itc h in g p o w e r supplies, D C -D C converter. in m illim eters inches


    OCR Scan     		PDF 2SK827 2SK827 215X0 1987M

    2SK824

    Abstract: No abstract text available
    Text: NEC N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR ELECTRON DEVICE DESCRIPTION 2SK824 The 2SK824 is N-channel MOS Field Effect Power Transistor designed fo r switching power supplies, DC-DC PACKAGE DIMENSIONS in m illim eters inches converters. FEATURES •


    OCR Scan     		PDF 2SK824 2SK824 1987M

    2sk82

    Abstract: 2SK823
    Text: NEC N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR ELECTRON DEVICE DESCRIPTION 2SK823 The 2SK823 is N-channel MOS Field Effect Power Transistor PACKAGE DIMENSIONS designed for switching power supplies, DC-DC converters. FEATURES in m illim e te rs inches • Suitable for switching power supplies, actuater controls,


    OCR Scan     		PDF 2SK823 1987M 2sk82

    2SK829

    Abstract: 2sk82
    Text: NEC N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR ELECTRON DEVICE 2SK829 DESCRIPTION The 2SK829 is N-channel MOS Field E ffect Power Transistor PACKAGE DIMENSIONS designed fo r switching power supplies, DC-DC converters. FEATURES in m illim e te rs inches


    OCR Scan     		PDF 2SK829 1987M 2sk82

    for1a

    Abstract: 2sk82 2SK829 T12N
    Text: N E C N E C ELECTRONICS 98D INC ELE CTR ONICS INC ~Tñ MOS 19005 D 7" — D Ë f| 1 ^ 5 7 5 2 5 FIELD GDnDDS EFFECT 4 TRAXS ISTC." ELECTRON DEVICE 2SK82S F A S T S W I T C H I N G N - C H A N N E L S I L I C O N ' POW ER MOS F E T PACKAGE DIMENSIONS Features


    OCR Scan     		PDF bMa75E5 2SK829 120ll T-39-13 Vos-10 J22686 for1a 2sk82 2SK829 T12N

    2SK822

    Abstract: TD-4002 TD400
    Text: DATA SHEET Preliminary NEC N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR ELECTRON DEVICE 2SK822 DESCRIPTION The 2SK822 is N-channel MOS Field E ffect Power Transistor designed fo r sw itching power supplies, DC-DC PACKAGE D IM EN SIO N S in m illim e te rs (inches)


    OCR Scan     		PDF 2SK822 2SK822 1987M TD-4002 TD400

    2SK824

    Abstract: No abstract text available
    Text: \-=7 > '> X 9 M O S Field Effect P o w e r T ra n sisto r _ 2SK824 FET iif f l 2 SK8 24 i , Nf-v*/U • *4 "/1- W nmm m t : mm > h # / N ° 7 - M 0 S FET ¡tS^ifcX'T am tt ^ ^ dss = ^50 V, ID(pc)= i 12 A RDS(on)i 0 . 5 Q ton —55 ns TYP. o £ £ D ! j { W


    OCR Scan     		PDF 2SK824 2SK824

    jb 5531

    Abstract: 2SK826
    Text: 5 ^ — 5 7 • 5 / — h M O S F ie ld E f f e c t P o w e r T r a n s is t o r 2SK826 N ^ ^ * ^ 7 - M O S F E T i i f f l 2SK826 i , N ^ - - v ^ ; W - ^ > ^ > X / y h ^ ' ° r7 - M 0 S T t > t & Î f c i ï * 1& < , •y f - > ? • * « , # D X C - i -y - f >


    OCR Scan     		PDF 2SK826Ã 221-mSJLLI 29-JtA 34-SS 354-ft 27-ffitSffi 29-ffiKS jb 5531 2SK826