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    2A SOT 323 Search Results

    2A SOT 323 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TCR2EF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR2LF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
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    2A SOT 323 Price and Stock

    Nexperia PMST2222A,115

    Bipolar Transistors - BJT SOT323 40V .6A NPN SWITCHING
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI PMST2222A,115 Reel 120,000 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.0173
    		Buy Now

    2A SOT 323 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    SSN2N7002A

    Abstract: No abstract text available
    Text: SSN2N7002A N-Channel Enhancement Mode MOSFET Product Summary VDS V ID (A) 60V 0.25A SOT-323 RDS(ON) ( ) Max D 3 @VGS = 10V G 4 @VGS = 5V S D FEATURES Super high dense cell design for low RDS(ON). G Rugged and reliable. SOT-323 package. Marking Code S 2A


    Original     		SSN2N7002A OT-323 OT-323 SSN2N7002A PDF

    Untitled

    Abstract: No abstract text available
    Text: SSF7401 -30V , -2A P-Ch Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-323 DESCRIPTION The SSF7401 uses advanced trench technology to provide excellent on-resistance, low gate charge and


    Original     		SSF7401 OT-323 SSF7401 10sec 18-Oct-2011 PDF

    SSF1320N

    Abstract: MosFET
    Text: SSF1320N 2A , 20V , RDS ON 58 mΩ Ω N-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION SOT-323 These miniature surface mount MOSFETs utilize a high cell density trench process to provide low


    Original     		SSF1320N OT-323 OT-323 28-Aug-2012 SSF1320N MosFET PDF

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon LMBT3906LT1G • Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish 3 ORDERING INFORMATION Device 1 Marking 2 Shipping LMBT3906LT1G 2A 3000/Tape & Reel LMBT3906LT3G


    Original     		LMBT3906LT1G 3000/Tape LMBT3906LT3G 10000/Tape 236AB) PDF

    TRANSISTOR MOTOROLA MAC 223

    Abstract: MRF9282 MRF1510 triac MAC 97 AB MSB81T1 solid state 220 volt stabilizer circuit MHW8272 MRF9242 10 amp igbt 1000 volt 100 amp 1200 volt Triac
    Text: NEW PRODUCT CALENDAR and KEY FOCUS PRODUCTS 3Q96 CALCPSTG/D REV 8 This quarterly folder includes information on products by the Communications, Power and Signal Technologies Group CPSTG , which comprises four organizations. These organizations are the RF Semiconductor Division, specializing in low power and high power discrete transistors, hybrid circuits for power amplifiers (modules),


    Original     		PDF

    MMBT3904WT1G

    Abstract: 1N916 MMBT3904WT1 MMBT3906WT1 MMBT3906WT1G
    Text: MMBT3904WT1, NPN MMBT3906WT1, PNP General Purpose Transistors NPN and PNP Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT−323/SC−70 package which is designed for low power surface mount applications.


    Original     		MMBT3904WT1, MMBT3906WT1, OT-323/SC-70 MMBT3904WT1 MMBT3906WT1 SC-70 OT-323) MMBT3904WT1G 1N916 MMBT3904WT1 MMBT3906WT1 MMBT3906WT1G PDF

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon LMBT3906TT1 3 FEATURE ƽSimplifies Circuit Design. ƽThis is a Pb-Free Device. 1 2 ORDERING INFORMATION Device LMBT3906TT1 Marking Shipping 2A 3000/Tape&Reel SC-89 MAXIMUM RATINGS Symbol Value


    Original     		LMBT3906TT1 3000/Tape SC-89 PDF

    QM5HL-24

    Abstract: 2sk2850 transistor qm5hl 2SK2850 transistor pnp 600v. 1a. to 92 QM5HL24 MG20G6EL1 600V PNP pnp transistor 600V NPN Transistor 600V
    Text: Next W M.T O .C Semiconductors00-YDiscretes W 1 M.T . O W C W WW .100Y. M.T O W .C ZTX~Series Transistors .TW W product Detailed Ware available on: us. 100y. com. tw W 00Y specifications 1 M.T . M O W O C . .C WW .1Pol00YIc max Part No. Product No. Manufacturer


    Original     		10silicon ZTX653 3P/TO-92 NPN00Y ZTX689B ZTX690B NPN100Y AT-31033-TR1 QM5HL-24 2sk2850 transistor qm5hl 2SK2850 transistor pnp 600v. 1a. to 92 QM5HL24 MG20G6EL1 600V PNP pnp transistor 600V NPN Transistor 600V PDF

    sot-23 single diode mark PD

    Abstract: LN2302LT1G SC-75 LN2302LT3G mark 642 sot 6 mark 642 sot 363 single diode sot-23 mark pd SOT23 MARKING N02 MARK LTRA SOT23
    Text: LESHAN RADIO COMPANY, LTD. 20V N-Channel Enhancement-Mode MOSFET LN2302LT1G VDS= 20V RDS ON , Vgs@4.5V, Ids@2.8A = 60m Ω RDS(ON), Vgs@2.5V, Ids@2.0A = 115mΩ 3 1 2 Features SOT– 23 (TO–236AB) High Density Cell Design For Ultra Low On-Resistance Improved Shoot-Through FOM


    Original     		LN2302LT1G 236AB) 3000/Tape LN2302LT3G 000/Tape 195mm 150mm 3000PCS/Reel sot-23 single diode mark PD LN2302LT1G SC-75 LN2302LT3G mark 642 sot 6 mark 642 sot 363 single diode sot-23 mark pd SOT23 MARKING N02 MARK LTRA SOT23 PDF

    LP4101LT1G

    Abstract: P41 sot-23 mark 642 sot 363 MARKING d1 sot-723 SC-75 SOT-353 MARKING 8v sot-23 single diode mark PD
    Text: LESHAN RADIO COMPANY, LTD. 20V P-Channel Enhancement-Mode MOSFET LP4101LT1G VDS= -20V RDS ON , Vgs@-4.5V, Ids@-2.8A = 100 mΩ RDS(ON), Vgs@-2.5V, Ids@-2.0A = 150 mΩ 3 Features Advanced trench process technology 1 High Density Cell Design For Ultra Low On-Resistance


    Original     		LP4101LT1G 236AB) 3000/Tape LP4101LT3G 000/Tape 195mm 150mm 3000PCS/Reel LP4101LT1G P41 sot-23 mark 642 sot 363 MARKING d1 sot-723 SC-75 SOT-353 MARKING 8v sot-23 single diode mark PD PDF

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. ▼ Simple Drive Requirement LP2301LT1G ▼ Small Package Outline ▼ Surface Mount Device ▼ Pb-Free package is available 3 1 2 SOT– 23 TO–236AB D G S Absolute Maximum Ratings Symbol Parameter VDS Drain-Source Voltage VGS


    Original     		LP2301LT1G 236AB) PDF

    LP2301LT1G

    Abstract: SC-75 SOT-353 MARKING 8v 619 SOT 23 sot-23 single diode mark PD
    Text: LESHAN RADIO COMPANY, LTD. 20V P-Channel Enhancement-Mode MOSFET LP2301LT1G VDS= -20V RDS ON , Vgs@-4.5V, Ids@-2.8A = 100 mΩ RDS(ON), Vgs@-2.5V, Ids@-2.0A = 150 mΩ 3 Features Advanced trench process technology 1 High Density Cell Design For Ultra Low On-Resistance


    Original     		LP2301LT1G 236AB) 3000/Tape LP2301LT3G 000/Tape 195mm 150mm 3000PCS/Reel LP2301LT1G SC-75 SOT-353 MARKING 8v 619 SOT 23 sot-23 single diode mark PD PDF

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN and PNP Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT–323/SC–70 which is designed for low power surface mount applications. ƽ Pb-Free Package is available.


    Original     		323/SCâ LMBT3904WT1G LMBT3906WT1G OT-323/SC-70 3000/Tape LMBT3904WT3G 10000/Tape PDF

    Infineon technology roadmap for mosfet

    Abstract: germanium transistor pnp smd smd mosfet sot-363 microwave transistor siemens bfp 420 varactor flip chip radar 77 ghz sige Infineon automotive semiconductor technology roadmap transistor SMD DK qs siemens spc 2 SiGe PNP transistor
    Text: Small CHIPS for big visions Silicon Discretes www.infineon.com Never stop thinking. INTRODUCTION O n e o f t h e w o r l d ' s major manufacturers of radio frequency RF components, Infineon Technologies is committed to innovative technologies and products, flexible service and the very best supply conditions for customers and partners.


    Original     		B191-H7496-G1-X-7600 Infineon technology roadmap for mosfet germanium transistor pnp smd smd mosfet sot-363 microwave transistor siemens bfp 420 varactor flip chip radar 77 ghz sige Infineon automotive semiconductor technology roadmap transistor SMD DK qs siemens spc 2 SiGe PNP transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon LMBT3906WT1G S-LMBT3906WT1G These transistors are designed for general purpose amplifier applications. They are housed in the SOT–323/SC–70 which is designed for low power surface mount applications.


    Original     		LMBT3906WT1G S-LMBT3906WT1G 323/SCâ AEC-Q101 OT-323/SC-70 3000/Tape LMBT3906WT3G S-LMBT3906We PDF

    1N916

    Abstract: MMBT3904WT1 MMBT3906WT1 SMD310
    Text: MMBT3904WT1, NPN MMBT3906WT1, PNP General Purpose Transistors NPN and PNP Silicon http://onsemi.com These transistors are designed for general purpose amplifier applications. They are housed in the SOT–323/SC–70 package which is designed for low power surface mount applications.


    Original     		MMBT3904WT1, MMBT3906WT1, 323/SC MMBT3904WT1 MMBT3906WT1 1N916 MMBT3904WT1 MMBT3906WT1 SMD310 PDF

    AB-038

    Abstract: OPA544T opa544 AB-039 MUR420 OPA544F OPA544T-1 REF102
    Text: OPA544 High-Voltage, High-Current OPERATIONAL AMPLIFIER FEATURES DESCRIPTION ● HIGH OUTPUT CURRENT: 2A min The OPA544 is a high-voltage/high-current operational amplifier suitable for driving a wide variety of high power loads. High performance FET op amp


    Original     		OPA544 OPA544 100pA O-220 AB-038 OPA544T AB-039 MUR420 OPA544F OPA544T-1 REF102 PDF

    MMBF4856

    Abstract: pin configuration NPN transistor BC547 sot-23 BC337/BC327 BC547 sot package sot-23 t6661 bipolar transistor bc107 MPS6595 zt751 FET Transistor Guide BS107 MOTOROLA
    Text: Small Signal Transistors, FETs and Diodes In Brief . . . New in this revision is Motorola’s GreenLine portfolio of devices. They feature energy–conserving traits superior to those of our existing line of standard parts for the same usage. GreenLine devices can actually help reduce the


    Original     		226AA) 226AE) MMSD1000T1 236AB MMBF0201NLT1 MMBF0202PLT1 MMBF4856 pin configuration NPN transistor BC547 sot-23 BC337/BC327 BC547 sot package sot-23 t6661 bipolar transistor bc107 MPS6595 zt751 FET Transistor Guide BS107 MOTOROLA PDF

    1N916

    Abstract: MMBT3904WT1 MMBT3906WT1
    Text: MOTOROLA Order this document MMBT3904WT1/D SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors NPN MMBT3904WT1 PNP MMBT3906WT1 NPN and PNP Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT–323/SC–70 which is designed for low power surface mount


    Original     		MMBT3904WT1/D MMBT3904WT1 MMBT3906WT1 323/SC 1N916 MMBT3904WT1 MMBT3906WT1 PDF

    1N916

    Abstract: MMBT3904WT1 MMBT3906WT1
    Text: MOTOROLA Order this document MMBT3904WT1/D SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors NPN MMBT3904WT1 PNP MMBT3906WT1 NPN and PNP Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT–323/SC–70 which is designed for low power surface mount


    Original     		MMBT3904WT1/D MMBT3904WT1 MMBT3906WT1 323/SC 1N916 MMBT3904WT1 MMBT3906WT1 PDF

    1N916

    Abstract: MMBT3904WT1 MMBT3904WT1G MMBT3906WT1 MMBT3906WT1G
    Text: MMBT3904WT1, NPN MMBT3906WT1, PNP General Purpose Transistors NPN and PNP Silicon http://onsemi.com These transistors are designed for general purpose amplifier applications. They are housed in the SOT−323/SC−70 package which is designed for low power surface mount applications.


    Original     		MMBT3904WT1, MMBT3906WT1, OT-323/SC-70 MMBT3904WT1 MMBT3906WT1 SC-70 OT-323) 1N916 MMBT3904WT1 MMBT3904WT1G MMBT3906WT1 MMBT3906WT1G PDF

    AB-038

    Abstract: AB-039 MUR420 OPA544 OPA544F OPA544T OPA544T-1 REF102 TO-220
    Text: OPA544 High-Voltage, High-Current OPERATIONAL AMPLIFIER FEATURES DESCRIPTION ● HIGH OUTPUT CURRENT: 2A min The OPA544 is a high-voltage/high-current operational amplifier suitable for driving a wide variety of high power loads. High performance FET op amp


    Original     		OPA544 OPA544 100pA O-220 AB-038 AB-039 MUR420 OPA544F OPA544T OPA544T-1 REF102 TO-220 PDF

    BC547 sot package sot-23

    Abstract: BC337 BC547 2N2484 motorola MSB81T1 zt751 pin configuration NPN transistor BC547 sot-23 MMBF4856 SOT-223 P1f P1F motorola 2N2222A plastic package
    Text: Small Signal Transistors, FETs and Diodes In Brief . . . New in this revision is Motorola’s GreenLine portfolio of devices. They feature energy–conserving traits superior to those of our existing line of standard parts for the same usage. GreenLine devices can actually help reduce the


    Original     		MDC5000T1 MDC5001T1 MDC3105LT1 BC547 sot package sot-23 BC337 BC547 2N2484 motorola MSB81T1 zt751 pin configuration NPN transistor BC547 sot-23 MMBF4856 SOT-223 P1f P1F motorola 2N2222A plastic package PDF

    BC337 BC547

    Abstract: MSB81T1 MBT3904DW9T1 marking 6AA SOD MVAM115 automatic stabilizer circuit diagram range 210 to 250 volts zt751 MBT3904DW9 transistor 2N4125 CT BC547 TRANSISTOR PIN DIAGRAM
    Text: Small Signal Transistors, FETs and Diodes In Brief . . . New in this revision is Motorola’s GreenLine portfolio of devices. They feature energy–conserving traits superior to those of our existing line of standard parts for the same usage. GreenLine devices can actually help reduce the


    Original     		MDC5000T1 MDC3105LT1 BC337 BC547 MSB81T1 MBT3904DW9T1 marking 6AA SOD MVAM115 automatic stabilizer circuit diagram range 210 to 250 volts zt751 MBT3904DW9 transistor 2N4125 CT BC547 TRANSISTOR PIN DIAGRAM PDF