W49F102
Abstract: No abstract text available
Text: W49F102 64K x 16 CMOS FLASH MEMORY GENERAL DESCRIPTION The W49F102 is a 1-megabit, 5-volt only CMOS flash memory organized as 64K × 16 bits. The device can be programmed and erased in-system with a standard 5V power supply. A 12-volt VPP is not required. The unique cell architecture of the W49F102 results in fast program/erase operations with
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W49F102
W49F102
12-volt
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W49L102
Abstract: A1A15
Text: Preliminary W49L102 64K x 16 CMOS 3.3V FLASH MEMORY GENERAL DESCRIPTION The W49L102 is a 1-megabit, 3.3-volt only CMOS flash memory organized as 64K × 16 bits. The device can be programmed and erased in-system with a standard 3.3V power supply. A 12-volt VPP is
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W49L102
W49L102
12-volt
A1A15
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2AAA 5555
Abstract: tcet 1010
Text: W49L102 64K x 16 CMOS 3.3V FLASH MEMORY GENERAL DESCRIPTION The W49L102 is a 1-megabit, 3.3-volt only CMOS flash memory organized as 64K × 16 bits. The device can be programmed and erased in-system with a standard 3.3V power supply. A 12-volt VPP is not required. The unique cell architecture of the W49L102 results in fast program/erase operations with
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W49L102
12-volt
2AAA 5555
tcet 1010
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W29F102Q-55
Abstract: W29F102 MM 5555
Text: Preliminary W29F102 64K x 16 CMOS FLASH MEMORY GENERAL DESCRIPTION The W29F102 is a 1-megabit, 5-volt only CMOS flash memory organized as 64K × 16 bits. The device can be programmed and erased in-system with a standard 5V power supply. A 12-volt VPP is not required. The unique cell architecture of the W29F102 results in fast program/erase operations
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W29F102
W29F102
12-volt
W29F102Q-55
MM 5555
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Untitled
Abstract: No abstract text available
Text: Preliminary W29F201 128K x 16 CMOS FLASH MEMORY GENERAL DESCRIPTION The W29F201 is a 2-megabit, 5-volt only CMOS flash memory organized as 128K × 16 bits. The device can be programmed and erased in-system with a standard 5V power supply. A 12-volt VPP is
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W29F201
W29F201
12-volt
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Untitled
Abstract: No abstract text available
Text: Preliminary W29N102C 64K x 16 CMOS 3.3V FLASH MEMORY GENERAL DESCRIPTION The W29N102C is a 1-megabit, 3.3-volt only CMOS flash memory organized as 64K × 16 bits. The device can be programmed and erased in-system with a standard 3.3V power supply. A 12-volt VPP is
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W29N102C
W29N102C
12-volt
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W49F201
Abstract: No abstract text available
Text: Preliminary W49F201 128K x 16 CMOS FLASH MEMORY GENERAL DESCRIPTION The W49F201 is a 2-megabit, 5-volt only CMOS flash memory organized as 128K × 16 bits. The device can be programmed and erased in-system with a standard 5V power supply. A 12-volt VPP is
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W49F201
W49F201
12-volt
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w49f002up12b
Abstract: W49F002U-12B W49F002U
Text: W49F002U 256K x 8 CMOS FLASH MEMORY GENERAL DESCRIPTION The W49F002U is a 2-megabit, 5-volt only CMOS flash memory organized as 256K × 8 bits. The device can be programmed and erased in-system with a standard 5V power supply. A 12-volt VPP is not required. The unique cell architecture of the W49F002U results in fast program/erase operations
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W49F002U
W49F002U
12-volt
w49f002up12b
W49F002U-12B
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W49L102
Abstract: No abstract text available
Text: Preliminary W49L102 64K x 16 CMOS 3.3V FLASH MEMORY GENERAL DESCRIPTION The W49L102 is a 1-megabit, 3.3-volt only CMOS flash memory organized as 64K × 16 bits. The device can be programmed and erased in-system with a standard 3.3V power supply. A 12-volt VPP is
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W49L102
W49L102
12-volt
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W29F102
Abstract: No abstract text available
Text: W29F102 64K x 16 CMOS FLASH MEMORY GENERAL DESCRIPTION The W29F102 is a 1-megabit, 5-volt only CMOS flash memory organized as 64K × 16 bits. The device can be programmed and erased in-system with a standard 5V power supply. A 12-volt VPP is not required. The unique cell architecture of the W29F102 results in fast program/erase operations
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W29F102
W29F102
12-volt
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W49L201
Abstract: XX30
Text: Preliminary W49L201 128K x 16 CMOS FLASH MEMORY GENERAL DESCRIPTION The W49L201 is a 2-megabit, 3.3-volt only CMOS flash memory organized as 128K × 16 bits. The device can be programmed and erased in-system with a standard 3.3V power supply. A 12-volt VPP is
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W49L201
W49L201
12-volt
XX30
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W29F020
Abstract: W49F020 W49F020-70 W49F020-90
Text: Preliminary W49F020 256K x 8 CMOS FLASH MEMORY GENERAL DESCRIPTION The W49F020 is a 2-megabit, 5-volt only CMOS flash memory organized as 256K × 8 bits. The device can be programmed and erased in-system with a standard 5V power supply. A 12-volt VPP is not
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W49F020
W49F020
12-volt
W29F020
W49F020-70
W49F020-90
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Untitled
Abstract: No abstract text available
Text: W29F102 64K x 16 CMOS FLASH MEMORY GENERAL DESCRIPTION The W29F102 is a 1-megabit, 5-volt only CMOS flash memory organized as 64K × 16 bits. The device can be programmed and erased in-system with a standard 5V power supply. A 12-volt VPP is not required. The unique cell architecture of the W29F102 results in fast program/erase operations with
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W29F102
12-volt
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Untitled
Abstract: No abstract text available
Text: Preliminary W49F002U 256K x 8 CMOS FLASH MEMORY GENERAL DESCRIPTION The W49F002U is a 2-megabit, 5-volt only CMOS flash memory organized as 256K × 8 bits. The device can be programmed and erased in-system with a standard 5V power supply. A 12-volt VPP is
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W49F002U
12-volt
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JEP-137
Abstract: JESD68 SW4506 T3A-2 SST38VF166 JEP137 be3vil
Text: 16 Megabit FlashBank Memory SST38UF166 / SST38VF166 FEATURES: Advance Information • Single Voltage Read and Write Operations – SST38UF166: 2.2-2.8V – SST38VF166: 2.7-3.6V • Separate Memory Banks for Code or Data – Simultaneous Read and Write Capability
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SST38UF166
SST38VF166
SST38UF166:
SST38VF166:
48-BALL
JEP-137
JESD68
SW4506
T3A-2
SST38VF166
JEP137
be3vil
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winbond w49f002up12b
Abstract: W49F002UP12B WINBOND W49F002U-12B W49F002U-12B Winbond W49F002U W49F002U
Text: W49F002U 256K x 8 CMOS FLASH MEMORY GENERAL DESCRIPTION The W49F002U is a 2-megabit, 5-volt only CMOS flash memory organized as 256K × 8 bits. The device can be programmed and erased in-system with a standard 5V power supply. A 12-volt VPP is not required. The unique cell architecture of the W49F002U results in fast program/erase operations
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W49F002U
W49F002U
12-volt
winbond w49f002up12b
W49F002UP12B
WINBOND W49F002U-12B
W49F002U-12B
Winbond W49F002U
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W29F002
Abstract: W49F002 W49F002B W49F002N W49F002U n70b a170 VS W29F W29F002B
Text: Preliminary W49F002/B/U/N 256K x 8 CMOS FLASH MEMORY GENERAL DESCRIPTION The W49F002/B/U/N is a 2-megabit, 5-volt only CMOS flash memory organized as 256K × 8 bits. The device can be programmed and erased in-system with a standard 5V power supply. A 12-volt
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W49F002/B/U/N
W49F002/B/U/N
12-volt
W29F002
W49F002
W49F002B
W49F002N
W49F002U
n70b
a170 VS
W29F
W29F002B
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AT49F1025
Abstract: AT49F1025-12JI
Text: Features • • • • • • • • • • Single Voltage Operation - 5V Read - 5V Reprogramming Fast Read Access Time - 70 ns Internal Program Control and Timer 8K word Boot Block With Lockout Fast Erase Cycle Time - 10 seconds Word By Word Programming - 10 µs/Word Typical
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AT49F1025
AT49F1025-12JC
AT49F1025-12VC
AT49F1025-12JI
AT49F1025-12VI
0000H
AT49F1025-12JI
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W29F020
Abstract: W49F020 W49F020-70 W49F020-90
Text: Preliminary W49F020 256K x 8 CMOS FLASH MEMORY GENERAL DESCRIPTION The W49F020 is a 2-megabit, 5-volt only CMOS flash memory organized as 256K × 8 bits. The device can be programmed and erased in-system with a standard 5V power supply. A 12-volt VPP is not
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W49F020
W49F020
12-volt
W29F020
W49F020-70
W49F020-90
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w29c042-90
Abstract: W29C042P-90 W29C042T-90
Text: W29C042 512K x 8 CMOS FLASH MEMORY GENERAL DESCRIPTION The W29C042 is a 4-megabit, 5-volt only CMOS page mode Flash Memory organized as 512K × 8 bits. The device can be written erased and programmed in-system with a standard 5V power supply. A 12-volt VPP is not required. The unique cell architecture of the W29C042 results in fast write (erase/
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W29C042
W29C042
12-volt
Activ798
w29c042-90
W29C042P-90
W29C042T-90
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W49F102
Abstract: No abstract text available
Text: W49F102 64K x 16 CMOS FLASH MEMORY GENERAL DESCRIPTION The W49F102 is a 1-megabit, 5-volt only CMOS flash memory organized as 64K × 16 bits. The device can be programmed and erased in-system with a standard 5V power supply. A 12-volt VPP is not required. The unique cell architecture of the W49F102 results in fast program/erase operations with
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W49F102
W49F102
12-volt
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W49L201
Abstract: No abstract text available
Text: W49L201 128K x 16 CMOS FLASH MEMORY GENERAL DESCRIPTION The W49L201 is a 2-megabit, 3.3-volt only CMOS flash memory organized as 128K × 16 bits. The device can be programmed and erased in-system with a standard 3.3V power supply. A 12-volt VPP is not required. The unique cell architecture of the W49L201 results in fast program/erase operations with
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W49L201
W49L201
12-volt
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AT49F2048
Abstract: No abstract text available
Text: Features • Single Voltage Operation • • • • • • • • • – 5V Read – 5V Reprogramming Fast Read Access Time - 70 ns Internal Erase/Program Control Sector Architecture – One 8K Words 16K bytes Boot Block with Programming Lockout – Two 8K Words (16K bytes) Parameter Blocks
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AT49F2048
AT49F2048-12RC
AT49F2048-12TC
AT49F2048-12RI
AT49F2048-12TI
00000H
01FFFH)
44-Lead,
48-Lead,
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AT49F516
Abstract: No abstract text available
Text: Features • Single Voltage Operation • • • • • • • • • – 5V Read – 5V Reprogramming Fast Read Access Time - 55 ns Internal Program Control and Timer 8K Word Boot Block With Lockout Fast Erase Cycle Time - 10 seconds Word-By-Word Programming - 10 µs/Word Typical
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AT49F516
275ssumes
1089B
10/98/xM
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