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    2CS 3150 Search Results

    2CS 3150 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MSS7331-502MLC Coilcraft Inc General Purpose Inductor, 5uH, 20%, Ferrite-Core, 2929, Visit Coilcraft Inc
    MSS7331-502MLB Coilcraft Inc General Purpose Inductor, 5uH, 20%, Ferrite-Core, 2929, Visit Coilcraft Inc
    MSS7331-502ML Coilcraft Inc Power inductor, shielded, 20/30% tol, SMT, RoHS Visit Coilcraft Inc
    MSS7331-502 Coilcraft Inc Power inductor, shielded, 20/30% tol, SMT, RoHS Visit Coilcraft Inc
    2SK3150STL-E Renesas Electronics Corporation Nch Single Power Mosfet 100V 20A 60Mohm LDPAK(S)-(1)/To-263 Visit Renesas Electronics Corporation

    2CS 3150 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    62WV5128BLL

    Abstract: issi is62wv5128bll 62WV5128ALL IS62WV5128ALL IS62WV5128ALL-70B IS62WV5128ALL-70T IS62WV5128ALL-70T2 IS62WV5128BLL 2cs 3150 IS62WV5128BLL-55BI
    Text: IS62WV5128ALL IS62WV5128BLL ISSI 512K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM PRELIMINARY INFORMATION MARCH 2002 FEATURES DESCRIPTION • High-speed access time: 55ns, 70ns The ISSI IS62WV5128ALL / IS62WV5128BLL are highspeed, 4M bit static RAMs organized as 512K words by 8


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    IS62WV5128ALL IS62WV5128BLL IS62WV5128ALL IS62WV5128BLL IS62WV5128BLL-70B2 IS62WV5128BLL-70H IS62WV5128BLL-55TI IS62WV5128BLL-55T2I IS62WV5128BLL-55BI IS62WV5128BLL-55B2I 62WV5128BLL issi is62wv5128bll 62WV5128ALL IS62WV5128ALL-70B IS62WV5128ALL-70T IS62WV5128ALL-70T2 2cs 3150 IS62WV5128BLL-55BI PDF

    Untitled

    Abstract: No abstract text available
    Text: ISSI IS62WV5128CLL 512K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM PRELIMINARY INFORMATION SEPTEMBER 2002 FEATURES DESCRIPTION • High-speed access time: 55ns, 70ns The ISSI IS62WV5128CLL are high-speed, 4M bit static RAMs organized as 512K words by 8 bits. It is fabricated


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    IS62WV5128CLL 62WV5128CLL) IS62WV5128CLL IS62WV5128CLL-55B IS62WV5128CLL-55B2 IS62WV5128CLL-70B IS62WV5128CLL-70B2 IS62WV5128CLL-55BI PDF

    A6 transistor mini

    Abstract: IS62WV5128CLL
    Text: ISSI IS62WV5128CLL 512K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM MARCH 2003 FEATURES DESCRIPTION • High-speed access time: 55ns, 70ns The ISSI IS62WV5128CLL are high-speed, 4M bit static RAMs organized as 512K words by 8 bits. It is fabricated


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    IS62WV5128CLL IS62WV5128CLL 62WV5128CLL) 75BSC 148BSC 030BSC A6 transistor mini PDF

    T1010

    Abstract: T-10162 T1008 PE-64941 PE-68998 psb21383 ST5069 xr t5650 T10162 PE-64995
    Text: TELECOMMUNICATIONS Transformers continued ISDN S-INTERFACE SINGLE & DUAL TRANSFORMERS (continued) Part Turns Primary Inductance Package Data Number Ratio OCL (mH min) L/W/H (in.)* Sheet THT – SINGLE, 3.0 KV ISOLATION, REINFORCED INSULATION PER IEC 950


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    PE-68992 PE-68993 PE-68995 PE-68998 PE-68999 T5035 T5024 T5025 T5026 T5036 T1010 T-10162 T1008 PE-64941 PE-68998 psb21383 ST5069 xr t5650 T10162 PE-64995 PDF

    PE-68836

    Abstract: ST5028 T601 transformerS ST5078 XR-5894 psb21383 st5122 ST5179T T1046 T1021
    Text: TELECOMMUNICATIONS Pulse is the world’s leading manufacturer of magnetics for digital telecom applications. The product line includes a wide variety of isolation transformers and common mode chokes matched to the leading T1/E1/CEPT/ISDN-PRI, T3/E3/STS-1, ISDN-S/T and ISDN U-Interface transceiver chips.


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    Rati5967 PE-65967 PE-65968 T3001 T3002 PE-68836 ST5028 T601 transformerS ST5078 XR-5894 psb21383 st5122 ST5179T T1046 T1021 PDF

    ALS-300

    Abstract: ST6200T TX3036 GW7600 T1027 T1216 T613 ST5116 T10681 ST5028
    Text: TELECOMMUNICATIONS PRODUCTS Pulse is the world’s leading manufacturer of magnetics for digital and analog telecom applications. The product line includes a variety of isolation transformers and common mode chokes matched to the leading T1/E1/CEPT/ISDN-PRI, T3/E3/STS-1, ISDN-S/T, ISDN-U, and


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    LXT361 T7288, T290A T7289A T7688, T7690, T7698 T7689, ALS-300 ST6200T TX3036 GW7600 T1027 T1216 T613 ST5116 T10681 ST5028 PDF

    18NL

    Abstract: TX3036 PEB 22554 TX1301 t1180nl LXT6155 T1180 T6074 T1095NL t1213
    Text: Telecommunications Products TELECOMMUNICATIONS PRODUCTS Pulse is a leading provider of magnetics for telecom infrastructure equipment, customer premises equipment, audio interface applications, and emerging applications such as VoIP. Our broad portfolio of transformers and integrated transformer modules


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    T9030 T9021 TX9031 TX9023 TX9027 TX9020 18NL TX3036 PEB 22554 TX1301 t1180nl LXT6155 T1180 T6074 T1095NL t1213 PDF

    t1146

    Abstract: t1180nl TX3036 t629 PE65612 T1144NL PULSE PE-65612NL T1095NL tx1321nl T121-1
    Text: Telecommunications Products TELECOMMUNICATIONS PRODUCTS Pulse is a leading provider of magnetics for telecom infrastructure equipment, customer premises equipment, audio interface applications, and emerging applications such as VoIP. Our broad portfolio of transformers and integrated transformer modules


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    PE-68629 PE-65968 PE-65967 t1146 t1180nl TX3036 t629 PE65612 T1144NL PULSE PE-65612NL T1095NL tx1321nl T121-1 PDF

    Untitled

    Abstract: No abstract text available
    Text: Telecommunications Products 现货库存技术资料、百科信息、热点资讯,精彩尽在鼎好! TELECOMMUNICATIONS PRODUCTS Pulse is a leading provider of magnetics for telecom infrastructure equipment, customer premises equipment, audio interface applications, and emerging applications such as


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    T9030 T9021 TX9031 TX9023 TX9027 TX9020 PDF

    2cs 3150

    Abstract: No abstract text available
    Text: ISSI IS62WV25616CLL 256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM NOVEMBER 2002 FEATURES DESCRIPTION • High-speed access time: 55ns, 70ns The ISSI IS62WV25616CLL are high-speed, low power, 4M bit SRAMs organized as 256K words by 16 bits. It is


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    IS62WV25616CLL 62WV25616CLL) IS62WV25616CLL techn10 IS62WV25616CLL-55B IS62WV25616CLL-55B2 IS62WV25616CLL-55BI IS62WV25616CLL-55B2I 2cs 3150 PDF

    Untitled

    Abstract: No abstract text available
    Text: ISSI IS62WV25616CLL 256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM FEBRUARY 2003 FEATURES DESCRIPTION • High-speed access time: 55ns, 70ns The ISSI IS62WV25616CLL are high-speed, low power, 4M bit SRAMs organized as 256K words by 16 bits. It is


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    IS62WV25616CLL 62WV25616CLL) IS62WV25616CLL IS62WV25616CLL-55B IS62WV25616CLL-55B2 IS62WV25616CLL-55BI IS62WV25616CLL-55B2I IS62WV25616CLL-70BI PDF

    IS62WV25616CLL

    Abstract: No abstract text available
    Text: ISSI IS62WV25616CLL 256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM MARCH 2003 FEATURES DESCRIPTION • High-speed access time: 55ns, 70ns The ISSI IS62WV25616CLL are high-speed, low power, 4M bit SRAMs organized as 256K words by 16 bits. It is


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    IS62WV25616CLL IS62WV25616CLL 62WV25616CLL) PDF

    Untitled

    Abstract: No abstract text available
    Text: ISSI IS62WV25616CLL 256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM PRELIMINARY INFORMATION SEPTEMBER 2002 FEATURES DESCRIPTION • High-speed access time: 55ns, 70ns The ISSI IS62WV25616CLL are high-speed, low power, 4M bit SRAMs organized as 256K words by 16 bits. It is


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    IS62WV25616CLL 62WV25616CLL) IS62WV25616CLL IS62WV25616CLL-55B IS62WV25616CLL-55B2 IS62WV25616CLL-70B IS62WV25616CLL-70B2 IS62WV25616CLL-55BI PDF

    IS62WV25616ALL

    Abstract: IS62WV25616BLL
    Text: IS62WV25616ALL IS62WV25616BLL ISSI 256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM PRELIMINARY INFORMATION MARCH 2002 DESCRIPTION FEATURES The ISSI IS62WV25616ALL / IS62WV25616BLL are highspeed, 4M bit static RAMs organized as 128K words by 16 bits. It is fabricated using ISSI's high-performance CMOS


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    IS62WV25616ALL IS62WV25616BLL IS62WV25616ALL IS62WV25616BLL IS62WV25616BLL-70B2 IS62WV25616BLL-55TI IS62WV25616BLL-55BI IS62WV25616BLL-55B2I IS62WV25616BLL-70TI IS62WV25616BLL-70BI PDF

    PE-51686

    Abstract: sil t604 ST3983 ST6118T Globespan 3.16 - H3 st7010t FEE222-3-2 st6122 FSM22 b1019
    Text: POWER PRODUCTS Inductors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2-5 Current Sense Transformers & Inductors . . . . . . .4 Common Mode Inductors . . . . . . . . . . . . . . . . . . . . . .5 Transformers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: ISSI IS62WV25616ALL IS62WV25616BLL 256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM PRELIMINARY INFORMATION OCTOBER 2002 FEATURES DESCRIPTION • High-speed access time: 55ns, 70ns The ISSI IS62WV25616ALL/IS62WV25616BLL are highspeed, low power, 4M bit SRAMs organized as 256K words


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    IS62WV25616ALL IS62WV25616BLL 62WV25616ALL) 62WV25616BLL) IS62WV25616ALL/IS62WV25616BLL IS62WV25616ALL, IS62WV25616ALL IS62WV25616ALL-70T IS62WV25616ALL-70TI PDF

    IS62WV12816BLL

    Abstract: No abstract text available
    Text: IS62WV12816ALL IS62WV12816BLL ISSI 128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM PRELIMINARY INFORMATION MARCH 2002 DESCRIPTION FEATURES • High-speed access time: 45ns, 55ns, 70ns • CMOS low power operation – 36 mW typical operating – 9 µW (typical) CMOS standby


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    IS62WV12816ALL IS62WV12816BLL 62WV12816ALL) 62WV12816BLL) IS62WV12816ALL/ IS62WV12816BLL IS62WV12816BLL-55TI IS62WV12816BLL-55BI IS62WV12816BLL-55B2I IS62WV12816BLL-70TI PDF

    IS62WV12816ALL

    Abstract: IS62WV12816BLL
    Text: IS62WV12816ALL IS62WV12816BLL ISSI 128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM PRELIMINARY INFORMATION APRIL 2002 FEATURES DESCRIPTION • High-speed access time: 45ns, 55ns, 70ns The ISSI IS62WV12816ALL/ IS62WV12816BLL are highspeed, 2M bit static RAMs organized as 128K words by 16


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    IS62WV12816ALL IS62WV12816BLL IS62WV12816ALL/ IS62WV12816BLL is55T IS62WV12816BLL-55B IS62WV12816BLL-55B2 IS62WV12816BLL-70T IS62WV12816BLL-70B IS62WV12816BLL-70B2 IS62WV12816ALL PDF

    IS62WV12816BLL-55TLI

    Abstract: IS62WV12816ALL-70Bli IS62WV12816ALL IS62WV12816BLL 62WV12816BLL 62WV12816ALL
    Text: IS62WV12816ALL IS62WV12816BLL 128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM JANUARY 2010 FEATURES DESCRIPTION • High-speed access time: 45ns, 55ns, 70ns The ISSI IS62WV12816ALL/ IS62WV12816BLL are highspeed, 2M bit static RAMs organized as 128K words by 16


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    IS62WV12816ALL IS62WV12816BLL IS62WV12816ALL/ IS62WV12816BLL MO-207 IS62WV12816ALL, IS62WV12816BLL-55TLI IS62WV12816ALL-70Bli IS62WV12816ALL 62WV12816BLL 62WV12816ALL PDF

    62WV12816ALL

    Abstract: No abstract text available
    Text: IS62WV12816ALL IS62WV12816BLL 128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM MAY 2011 FEATURES DESCRIPTION • High-speed access time: 45ns, 55ns, 70ns The ISSI IS62WV12816ALL/ IS62WV12816BLL are highspeed, 2M bit static RAMs organized as 128K words by 16


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    IS62WV12816ALL IS62WV12816BLL 62WV12816ALL) 62WV12816BLL) IS62WV12816ALL/ IS62WV12816BLL IS62WV12816ALL, MO-207 62WV12816ALL PDF

    IS62WV12816DALL-70BLI

    Abstract: No abstract text available
    Text: IS62WV12816DALL/DBLL IS65WV12816DALL/DBLL PRELIMINARY INFORMATION 128K x 16 LOW VOLTAGE, MAY 2011 ULTRA LOW POWER CMOS STATIC RAM FEATURES • • • • • • • • • • High-speed access time: 45ns, 55ns, 70ns CMOS low power operation – 36 mW typical operating


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    IS62WV12816DALL/DBLL IS65WV12816DALL/DBLL IS62/65WV12816DALL) IS62/65WV12816DBLL) IS62WV12816DALL/DBLL, MO-207 IS62WV12816DALL-70BLI PDF

    DBLL

    Abstract: No abstract text available
    Text: IS62WV12816DALL/DBLL IS65WV12816DALL/DBLL 128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES • • • • • • • • • • High-speed access time: 35ns, 45ns, 55ns CMOS low power operation – 36 mW typical operating – 9 µW (typical) CMOS standby


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    IS62WV12816DALL/DBLL IS65WV12816DALL/DBLL IS62/65WV12816DALL) IS62/65WV12816DBLL) IS62/65WV12816DALL/DBLL 12816DBLL-45CTLA3 IS65WV12816DBLL-45BLA3 IS62WV12816DALL/DBLL, MO-207 DBLL PDF

    62WV12816ALL

    Abstract: No abstract text available
    Text: IS62WV12816ALL IS62WV12816BLL 128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES NOVEMBER 2013 DESCRIPTION The ISSI IS62WV12816ALL/ IS62WV12816BLL are high- • High-speed access time: 45ns, 55ns, 70ns speed, 2M bit static RAMs organized as 128K words by


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    IS62WV12816ALL IS62WV12816BLL IS62WV12816ALL/ IS62WV12816BLL MO-207 IS62WV12816ALL, 62WV12816ALL PDF

    Untitled

    Abstract: No abstract text available
    Text: IS62WV12816DALL/DBLL IS65WV12816DALL/DBLL 128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES •฀ High-speed฀access฀time:฀35ns,฀45ns,฀55ns •฀ CMOS฀low฀power฀operation – 36 mW typical operating ฀ –฀9฀µW฀(typical)฀CMOS฀standby


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    IS62WV12816DALL/DBLL IS65WV12816DALL/DBLL IS62/65WV12816DALL) IS62/65WV12816DBLL) IS65WV12816DBLL-45BLA3à MO-207 IS62WV12816DALL/DBLL, PDF