BC849
Abstract: BC849B BC849C BC850 BC850B BC850C
Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company SOT-23 Formed SMD Package BC849 BC850 SILICON PLANAR EPITAXIAL TRANSISTORS N–P–N transistors Marking BC849 = 2D BC849B = 2B BC849C = 2C BC850 = 2H BC850B = 2F 8C850C = 2G PACKAGE OUTLINE DETAILS
|
Original
|
ISO/TS16949
OT-23
BC849
BC850
BC849B
BC849C
BC850B
8C850C
BC849
BC849B
BC849C
BC850
BC850B
BC850C
|
PDF
|
2f bc850
Abstract: BC849 BC849B BC849C BC850 BC850B BC850C
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BC849 BC850 SILICON PLANAR EPITAXIAL TRANSISTORS N–P–N transistors Marking BC849 = 2D BC849B = 2B BC849C = 2C BC850 = 2H BC850B = 2F 8C850C = 2G
|
Original
|
OT-23
BC849
BC850
BC849B
BC849C
BC850B
8C850C
2f bc850
BC849
BC849B
BC849C
BC850
BC850B
BC850C
|
PDF
|
MARKING 2F SOT23
Abstract: sot23 marking 2f 2f bc850 BC850 marking 2f 3
Text: SEMICONDUCTOR BC850 MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 2F 1 2 Item Marking Description Device Mark 2 BC850 hFE Grade F F, G * Lot No. 01 1998. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method
|
Original
|
BC850
OT-23
MARKING 2F SOT23
sot23 marking 2f
2f bc850
BC850
marking 2f 3
|
PDF
|
BC849
Abstract: 2f bc850 BC849B BC849C BC850 BC850B BC850C
Text: SEMICONDUCTOR BC849/850 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION . FEATURES E B L L D For Complementary With PNP Type BC859/860. BC850 BC849 Collector-Emitter Voltage BC850 Emitter-Base Voltage 30 VCBO
|
Original
|
BC849/850
BC859/860.
BC850
BC849
00MHz
BC849B
BC849
2f bc850
BC849B
BC849C
BC850
BC850B
BC850C
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR BC849/850 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION . FEATURES E B L L D ・For Complementary With PNP Type BC859/860. H MAXIMUM RATING Ta=25℃ BC849 Collector-Emitter Voltage BC850 Emitter-Base Voltage
|
Original
|
BC849/850
BC859/860.
BC849
BC850
100MHz
BC849B
|
PDF
|
BC849
Abstract: 2f bc850 2F P marking BC849B BC849C BC850 BC850B BC850C NPN sot23 mark NF
Text: SEMICONDUCTOR BC849/850 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION . FEATURES E B L L BC849 Collector-Emitter Voltage BC850 Emitter-Base Voltage VCEO 30 UNIT P V 50 30 V 45 P J BC850 VCBO 1 VEBO 5 V IC
|
Original
|
BC849/850
BC849
BC850
BC849B
BC849C
BC850B
BC849
2f bc850
2F P marking
BC849B
BC849C
BC850
BC850B
BC850C
NPN sot23 mark NF
|
PDF
|
smd transistor 2f
Abstract: 2f npn smd transistor SMD TRANSISTOR MARKING 2c smd transistor 2g 2f smd transistor smd TRANSISTOR marking 2F bc850c smd smd 2f transistor SMD 2f BC849C
Text: Transistors IC SMD Type NPN General Purpose Transistors BC849, BC850 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 0.55 Low voltage max. 45 V . +0.1 1.3-0.1 +0.1 2.4-0.1 Low current (max. 100 mA) 0.4 3 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1
|
Original
|
BC849,
BC850
OT-23
BC849B
BC849C
BC850B
BC850C
smd transistor 2f
2f npn smd transistor
SMD TRANSISTOR MARKING 2c
smd transistor 2g
2f smd transistor
smd TRANSISTOR marking 2F
bc850c smd
smd 2f
transistor SMD 2f
BC849C
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Transistors IC SMD Type Product specification BC849, BC850 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 0.55 Low voltage max. 45 V . +0.1 1.3-0.1 +0.1 2.4-0.1 Low current (max. 100 mA) 0.4 3 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1
|
Original
|
BC849,
BC850
OT-23
BC849B
BC849C
BC850B
BC850C
|
PDF
|
BC850
Abstract: BC856 BC859 BC846 BC846A BC847 BC848 BC849
Text: BC846 . BC850 BC846 . BC850 Surface Mount General Purpose Si-Epi-Planar Transistors Si-Epi-Planar Universaltransistoren für die Oberflächenmontage NPN NPN Version 2006-06-02 Power dissipation – Verlustleistung 1.1 2.9 ±0.1 0.4 Plastic case Kunststoffgehäuse
|
Original
|
BC846
BC850
OT-23
O-236)
UL94V-0
BC847
BC850
BC856
BC859
BC846
BC846A
BC847
BC848
BC849
|
PDF
|
B 660 TG
Abstract: No abstract text available
Text: BC847 BC849 BC846 BC848 BC850 SOT23 IMPN SILICON PLANAR GENERAL PURPOSE TRANSISTORS PARTMARKING DETAILS:BC848B - 1K BC846A - 1A BC846B - 1B BC848C - 1L 1E BC849B - 2B BC847A - BC847B - 1F BC849C - 2C 1G BC850B - 2F BC848A - 1J BC850C - 2G BC847C - ABSOLUTE MAXIMUM RATINGS
|
OCR Scan
|
BC847
BC849
BC846
BC848
BC850
BC848B
BC846A
BC846B
BC848C
BC849B
B 660 TG
|
PDF
|
BCS49C
Abstract: No abstract text available
Text: BC849 BC850 SILICON PLANAR EPITAXIAL TRANSISTORS N -P -N transistors M arking BC849 * 2D BC849B = 2B BCS49C = 2C BC850 = 2H BC850B = 2F 8C850C = 2G PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm _3.0 2.8 0.14 0.48 •538 ! 3 2.6 Pin configuration 2.4 1 = BASE
|
OCR Scan
|
BC849
BC850
BC849
BC849B
BCS49C
BC850B
8C850C
BC850
BCS49C
|
PDF
|
BC850
Abstract: BC850B BCS49 BC849 BC849B BC849C BC850C 8C850
Text: BC849 BC850 SILICON PLANAR EPITAXIAL TRANSISTORS N -P-N transistors Marking BC849 = 2D BC849B = 2B BC849C = 2C BC850 = 2H BC850B = 2F 8C850C = 2G Pin configuration PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm J5.0 2.8 0.14 0.48 0.38 2.6 2.4 1 = BASE 2 = EMITTER
|
OCR Scan
|
BC849
BC850
BC849B
BC849C
BC850B
8C850C
BC849
BC850
BC850B
BCS49
BC849B
BC849C
BC850C
8C850
|
PDF
|
Untitled
Abstract: No abstract text available
Text: BC849 BC850 SILICON PLANAR EPITAXIAL TRANSISTORS N - P - N transistors M a rk in g BC849 = 2D BC849B = 2B BC849C = 2C BC850 = 2H BC850B = 2F 8C850C = 2G PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN m m 3.0 2.8 0.48 - — s !^ _ P in c o n fig u ra tio n 2,6
|
OCR Scan
|
BC849
BC850
BC849B
BC849C
BC850B
8C850C
|
PDF
|
W15NA
Abstract: No abstract text available
Text: E3fl33T4 DÜ OÜTBT W BC849 BC850 SILICON PLANAR EPITAXIAL TRANSISTORS N -P-N transistors Marking BC849 = 2D BC849B = 2B BC849C = 2C BC850 = 2H BC850B = 2F 8C850C = 2G Pin configuration PA CKA G E O U TLINE DETAILS A LL D IM ENSIO NS IN m m _3.0_ 2.8 0.14
|
OCR Scan
|
E3fl33T4
BC849
BC850
BC849B
BC849C
BC850B
8C850C
W15NA
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: • This Pro Electron Series ^ CES* V V Min By Its Respective TO-236 (49) 30 30 5 15 BC84BB (IK.) TO-236 (49) 30 30 5 BC&48C (1L.) TO-236 (49) 30 30 ■ (V) Min BC848A (1J.) BC849C (2C.) TO-236 (49) 30 BC850B (2F.) TO-236 (49) BC850C (2G.) (V) Min V V BE(SAT)
|
OCR Scan
|
OT-23
004G523
|
PDF
|
part MARKING k48
Abstract: marking bc p28 CMSD4448 W4W MARKING CM0Z15L CMZ5936B CM0Z11V CMZ5945B marking 6ca marking code ca2
Text: Marking Codes Continued Marking Code Part Number Marking Code 04 04D 04A 04C 04S 040 1A 1A8 1AC 1B 1B8 1C8 1D8 1E 1E8 1F 1F8 1FF 1G 1G8 1H8 1J 1J8 1K 1K8 1L 1L8 1M8 1P 1PC 1QC 1F)C 2AC 2B 2C 2CA 2F 2FC 2G 2PC 2QC 2P 3A 3B 3E 3F 3G 3J 3K 3L 3P 4A 4B 4C 4E
|
OCR Scan
|
CMOD2004
CMLD2004
CMLD2004A
CMLD2004C
CMLD2004S
CMLD2004DO
BC846A
CMSZ5250B
CMST3904
BC846B
part MARKING k48
marking bc p28
CMSD4448
W4W MARKING
CM0Z15L
CMZ5936B
CM0Z11V
CMZ5945B
marking 6ca
marking code ca2
|
PDF
|
MPSA18 BC550
Abstract: marking 2C marking 2D BC846 National Semiconductor Discrete catalog MPSA18 BC558 BC184 BC550 tr bc548 2N3117 bc857 to 92 2N5210 national
Text: . Low Noise Am plifiers t,8E J> r Device VcEQ «l>t (Volte) Min 65 NPN Min Max BC546 110 450 BC846 110 300 Typ T0-92(97) 1,2C 10 300 Typ TO-236* 1,2C Notes 2 75 475 2 10 300 Typ TO-92(97) 1,2C 475 2 10 300 Typ TO-236* 1,2C 100 500 0.01 3 60 2N2484 TO-18 2F
|
OCR Scan
|
LSD113D
0D3152M
BC546
T0-92
BC846
O-236*
BC556
BC856
2N2484
MPSA18 BC550
marking 2C
marking 2D BC846
National Semiconductor Discrete catalog
MPSA18 BC558
BC184 BC550
tr bc548
2N3117
bc857 to 92
2N5210 national
|
PDF
|
BZX 48c 6v8
Abstract: PT2369 code Cj5 CMXZ11VTO 7006S
Text: M arking Codes Marking Code Part Number 04 04D 04A 04C 04S 040 1A 1A8 1AC 1B 1B8 1C8 1D8 1E 1E8 1F 1F8 1FF 1G 1G8 1H8 1J 1J8 1K 1K8 1L 1L8 1M8 1P 1PC 1QC 1RC 2AC 2B 2C 2C A 2F 2FC 2G 2 PC 2Q C 2P 3A 3AE 3B 3CE 3E 3F 3G 3J 3K 3L 3P 3SE 4A 4B 4C 4E 4F 4G 4P
|
OCR Scan
|
2004C
2004S
2004D
Z5250B
T3904
Z5251B
Z5252B
Z5253B
Z5254B
Z5255B
BZX 48c 6v8
PT2369
code Cj5
CMXZ11VTO
7006S
|
PDF
|
BC8508
Abstract: No abstract text available
Text: 12E 0 § b3b?aSM 0005005 3 I T-Xl-Ot M A X IM U M R AT IN G S Symbol BC850 BC849 Unit Collector-Emitter Voftage VCEO 45 30 V Collector-Base Voltage VcBO 50 30 V Emitter-Base Voltage Ve b o 6.0 5.0 V >C 100 100 mAdc Rating Collector Current — Continuous MOTOROLA SC
|
OCR Scan
|
BC850
BC849
BC849BL,
BC850BL,
OT-23
O-236AB)
BC8498L,
BC850BL
BC849CL,
BC850CL
BC8508
|
PDF
|
BT5401
Abstract: No abstract text available
Text: Transistors Reel = 500pcs, Bag = lOOpcs. SOT23 Case NPN T ype m iniR eel O rd e r N um ber N P N H ig h F req u en cy BF840 73-8400 BF841 73-8410 M M BTH 10 73-0010 M M BT918 73-0918 N P N L ow N ise M M BT5089 73-5089 M M BT5088 73-5088 BC850B 73-8501 B C850C
|
OCR Scan
|
500pcs,
BF840
BF841
BT918
BT5089
BT5088
BC850B
C850C
BT2484
SR19A
BT5401
|
PDF
|
Untitled
Abstract: No abstract text available
Text: bbSBSBl OOBMMbfi T 7 T « A P X P hilips S em iconductors NPN general purpose transistor BC849W; BC850W N AMER PHILIPS/DISCRETE FEATURES Product specification • ■ ■ ■ M i b7 E » PIN CONFIGURATION • S- mini package. • Low noise DESCRIPTION NPN transistor in a plastic SOT323
|
OCR Scan
|
BC849W;
BC850W
OT323
MBC670
BC849W
BC849BW;
BC850BW
|
PDF
|
D024-M
Abstract: D024M70 MARKING J1A BC849BW BC849CW BC849W BC850BW BC850CW BC850W SOT323 Marking LE
Text: bbSB^l Philips Semiconductors ODSMMbö T7T IAPX NPN general purpose transistor amer FEATURES philips Product specification BC849W; BC850W /d i s c r e t e b7E ]> PIN CONFIGURATION • S- mini package. • Low noise DESCRIPTION NPN transistor in a plastic SOT323
|
OCR Scan
|
0D24MbÃ
BC849W;
BC850W
OT323
-SOT323
BC849W:
BC849BW:
BC849CW:
BC850W:
BC850BW:
D024-M
D024M70
MARKING J1A
BC849BW
BC849CW
BC849W
BC850BW
BC850CW
BC850W
SOT323 Marking LE
|
PDF
|
BC547 surface mount
Abstract: BC548 T0-92 bc857 to92 MPSA18 BC547 bc856 to 92 T0-9297 bc857 to 92 TIS97
Text: Low Noise Amplifiers t.3E D Min Max mA MHz Min BC546 110 450 2 10 300 Typ T0-92(97) 1,2C BC846 110 0.01 10 300 Typ TO-236* 1,2C PNP NPN Package Notes 2 BC556 75 475 2 10 300 Typ TO-92(97) 1,2C BC856 125 475 2 10 300 Typ TO-236* 1,2C 2N2484 100 500 0.01 3
|
OCR Scan
|
tSD1130
BC546
BC846
T0-92
O-236*
BC556
BC856
N3962
PN4249
PN4250A
BC547 surface mount
BC548
bc857 to92
MPSA18 BC547
bc856 to 92
T0-9297
bc857 to 92
TIS97
|
PDF
|
BCS49
Abstract: No abstract text available
Text: Philips Semiconductors Product specification NPN general purpose transistor FEATURES BC849W; BC850W PIN CONFIGURATION • S- mini package. • Low noise DESCRIPTION NPN transistor in a plastic SOT323 package, primarily intended for low noise stages in tape recorders, hi-fi
|
OCR Scan
|
BC849W;
BC850W
OT323
BC849W
BC850W
BCS49
|
PDF
|