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    2F BC850 Search Results

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    BC849

    Abstract: BC849B BC849C BC850 BC850B BC850C
    Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company SOT-23 Formed SMD Package BC849 BC850 SILICON PLANAR EPITAXIAL TRANSISTORS N–P–N transistors Marking BC849 = 2D BC849B = 2B BC849C = 2C BC850 = 2H BC850B = 2F 8C850C = 2G PACKAGE OUTLINE DETAILS


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    ISO/TS16949 OT-23 BC849 BC850 BC849B BC849C BC850B 8C850C BC849 BC849B BC849C BC850 BC850B BC850C PDF

    2f bc850

    Abstract: BC849 BC849B BC849C BC850 BC850B BC850C
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BC849 BC850 SILICON PLANAR EPITAXIAL TRANSISTORS N–P–N transistors Marking BC849 = 2D BC849B = 2B BC849C = 2C BC850 = 2H BC850B = 2F 8C850C = 2G


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    OT-23 BC849 BC850 BC849B BC849C BC850B 8C850C 2f bc850 BC849 BC849B BC849C BC850 BC850B BC850C PDF

    MARKING 2F SOT23

    Abstract: sot23 marking 2f 2f bc850 BC850 marking 2f 3
    Text: SEMICONDUCTOR BC850 MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 2F 1 2 Item Marking Description Device Mark 2 BC850 hFE Grade F F, G * Lot No. 01 1998. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method


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    BC850 OT-23 MARKING 2F SOT23 sot23 marking 2f 2f bc850 BC850 marking 2f 3 PDF

    BC849

    Abstract: 2f bc850 BC849B BC849C BC850 BC850B BC850C
    Text: SEMICONDUCTOR BC849/850 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION . FEATURES E B L L D For Complementary With PNP Type BC859/860. BC850 BC849 Collector-Emitter Voltage BC850 Emitter-Base Voltage 30 VCBO


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    BC849/850 BC859/860. BC850 BC849 00MHz BC849B BC849 2f bc850 BC849B BC849C BC850 BC850B BC850C PDF

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR BC849/850 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION . FEATURES E B L L D ・For Complementary With PNP Type BC859/860. H MAXIMUM RATING Ta=25℃ BC849 Collector-Emitter Voltage BC850 Emitter-Base Voltage


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    BC849/850 BC859/860. BC849 BC850 100MHz BC849B PDF

    BC849

    Abstract: 2f bc850 2F P marking BC849B BC849C BC850 BC850B BC850C NPN sot23 mark NF
    Text: SEMICONDUCTOR BC849/850 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION . FEATURES E B L L BC849 Collector-Emitter Voltage BC850 Emitter-Base Voltage VCEO 30 UNIT P V 50 30 V 45 P J BC850 VCBO 1 VEBO 5 V IC


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    BC849/850 BC849 BC850 BC849B BC849C BC850B BC849 2f bc850 2F P marking BC849B BC849C BC850 BC850B BC850C NPN sot23 mark NF PDF

    smd transistor 2f

    Abstract: 2f npn smd transistor SMD TRANSISTOR MARKING 2c smd transistor 2g 2f smd transistor smd TRANSISTOR marking 2F bc850c smd smd 2f transistor SMD 2f BC849C
    Text: Transistors IC SMD Type NPN General Purpose Transistors BC849, BC850 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 0.55 Low voltage max. 45 V . +0.1 1.3-0.1 +0.1 2.4-0.1 Low current (max. 100 mA) 0.4 3 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1


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    BC849, BC850 OT-23 BC849B BC849C BC850B BC850C smd transistor 2f 2f npn smd transistor SMD TRANSISTOR MARKING 2c smd transistor 2g 2f smd transistor smd TRANSISTOR marking 2F bc850c smd smd 2f transistor SMD 2f BC849C PDF

    Untitled

    Abstract: No abstract text available
    Text: Transistors IC SMD Type Product specification BC849, BC850 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 0.55 Low voltage max. 45 V . +0.1 1.3-0.1 +0.1 2.4-0.1 Low current (max. 100 mA) 0.4 3 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1


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    BC849, BC850 OT-23 BC849B BC849C BC850B BC850C PDF

    BC850

    Abstract: BC856 BC859 BC846 BC846A BC847 BC848 BC849
    Text: BC846 . BC850 BC846 . BC850 Surface Mount General Purpose Si-Epi-Planar Transistors Si-Epi-Planar Universaltransistoren für die Oberflächenmontage NPN NPN Version 2006-06-02 Power dissipation – Verlustleistung 1.1 2.9 ±0.1 0.4 Plastic case Kunststoffgehäuse


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    BC846 BC850 OT-23 O-236) UL94V-0 BC847 BC850 BC856 BC859 BC846 BC846A BC847 BC848 BC849 PDF

    B 660 TG

    Abstract: No abstract text available
    Text: BC847 BC849 BC846 BC848 BC850 SOT23 IMPN SILICON PLANAR GENERAL PURPOSE TRANSISTORS PARTMARKING DETAILS:BC848B - 1K BC846A - 1A BC846B - 1B BC848C - 1L 1E BC849B - 2B BC847A - BC847B - 1F BC849C - 2C 1G BC850B - 2F BC848A - 1J BC850C - 2G BC847C - ABSOLUTE MAXIMUM RATINGS


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    BC847 BC849 BC846 BC848 BC850 BC848B BC846A BC846B BC848C BC849B B 660 TG PDF

    BCS49C

    Abstract: No abstract text available
    Text: BC849 BC850 SILICON PLANAR EPITAXIAL TRANSISTORS N -P -N transistors M arking BC849 * 2D BC849B = 2B BCS49C = 2C BC850 = 2H BC850B = 2F 8C850C = 2G PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm _3.0 2.8 0.14 0.48 •538 ! 3 2.6 Pin configuration 2.4 1 = BASE


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    BC849 BC850 BC849 BC849B BCS49C BC850B 8C850C BC850 BCS49C PDF

    BC850

    Abstract: BC850B BCS49 BC849 BC849B BC849C BC850C 8C850
    Text: BC849 BC850 SILICON PLANAR EPITAXIAL TRANSISTORS N -P-N transistors Marking BC849 = 2D BC849B = 2B BC849C = 2C BC850 = 2H BC850B = 2F 8C850C = 2G Pin configuration PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm J5.0 2.8 0.14 0.48 0.38 2.6 2.4 1 = BASE 2 = EMITTER


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    BC849 BC850 BC849B BC849C BC850B 8C850C BC849 BC850 BC850B BCS49 BC849B BC849C BC850C 8C850 PDF

    Untitled

    Abstract: No abstract text available
    Text: BC849 BC850 SILICON PLANAR EPITAXIAL TRANSISTORS N - P - N transistors M a rk in g BC849 = 2D BC849B = 2B BC849C = 2C BC850 = 2H BC850B = 2F 8C850C = 2G PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN m m 3.0 2.8 0.48 - — s !^ _ P in c o n fig u ra tio n 2,6


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    BC849 BC850 BC849B BC849C BC850B 8C850C PDF

    W15NA

    Abstract: No abstract text available
    Text: E3fl33T4 DÜ OÜTBT W BC849 BC850 SILICON PLANAR EPITAXIAL TRANSISTORS N -P-N transistors Marking BC849 = 2D BC849B = 2B BC849C = 2C BC850 = 2H BC850B = 2F 8C850C = 2G Pin configuration PA CKA G E O U TLINE DETAILS A LL D IM ENSIO NS IN m m _3.0_ 2.8 0.14


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    E3fl33T4 BC849 BC850 BC849B BC849C BC850B 8C850C W15NA PDF

    Untitled

    Abstract: No abstract text available
    Text: • This Pro Electron Series ^ CES* V V Min By Its Respective TO-236 (49) 30 30 5 15 BC84BB (IK.) TO-236 (49) 30 30 5 BC&48C (1L.) TO-236 (49) 30 30 ■ (V) Min BC848A (1J.) BC849C (2C.) TO-236 (49) 30 BC850B (2F.) TO-236 (49) BC850C (2G.) (V) Min V V BE(SAT)


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    OT-23 004G523 PDF

    part MARKING k48

    Abstract: marking bc p28 CMSD4448 W4W MARKING CM0Z15L CMZ5936B CM0Z11V CMZ5945B marking 6ca marking code ca2
    Text: Marking Codes Continued Marking Code Part Number Marking Code 04 04D 04A 04C 04S 040 1A 1A8 1AC 1B 1B8 1C8 1D8 1E 1E8 1F 1F8 1FF 1G 1G8 1H8 1J 1J8 1K 1K8 1L 1L8 1M8 1P 1PC 1QC 1F)C 2AC 2B 2C 2CA 2F 2FC 2G 2PC 2QC 2P 3A 3B 3E 3F 3G 3J 3K 3L 3P 4A 4B 4C 4E


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    CMOD2004 CMLD2004 CMLD2004A CMLD2004C CMLD2004S CMLD2004DO BC846A CMSZ5250B CMST3904 BC846B part MARKING k48 marking bc p28 CMSD4448 W4W MARKING CM0Z15L CMZ5936B CM0Z11V CMZ5945B marking 6ca marking code ca2 PDF

    MPSA18 BC550

    Abstract: marking 2C marking 2D BC846 National Semiconductor Discrete catalog MPSA18 BC558 BC184 BC550 tr bc548 2N3117 bc857 to 92 2N5210 national
    Text: . Low Noise Am plifiers t,8E J> r Device VcEQ «l>t (Volte) Min 65 NPN Min Max BC546 110 450 BC846 110 300 Typ T0-92(97) 1,2C 10 300 Typ TO-236* 1,2C Notes 2 75 475 2 10 300 Typ TO-92(97) 1,2C 475 2 10 300 Typ TO-236* 1,2C 100 500 0.01 3 60 2N2484 TO-18 2F


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    LSD113D 0D3152M BC546 T0-92 BC846 O-236* BC556 BC856 2N2484 MPSA18 BC550 marking 2C marking 2D BC846 National Semiconductor Discrete catalog MPSA18 BC558 BC184 BC550 tr bc548 2N3117 bc857 to 92 2N5210 national PDF

    BZX 48c 6v8

    Abstract: PT2369 code Cj5 CMXZ11VTO 7006S
    Text: M arking Codes Marking Code Part Number 04 04D 04A 04C 04S 040 1A 1A8 1AC 1B 1B8 1C8 1D8 1E 1E8 1F 1F8 1FF 1G 1G8 1H8 1J 1J8 1K 1K8 1L 1L8 1M8 1P 1PC 1QC 1RC 2AC 2B 2C 2C A 2F 2FC 2G 2 PC 2Q C 2P 3A 3AE 3B 3CE 3E 3F 3G 3J 3K 3L 3P 3SE 4A 4B 4C 4E 4F 4G 4P


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    2004C 2004S 2004D Z5250B T3904 Z5251B Z5252B Z5253B Z5254B Z5255B BZX 48c 6v8 PT2369 code Cj5 CMXZ11VTO 7006S PDF

    BC8508

    Abstract: No abstract text available
    Text: 12E 0 § b3b?aSM 0005005 3 I T-Xl-Ot M A X IM U M R AT IN G S Symbol BC850 BC849 Unit Collector-Emitter Voftage VCEO 45 30 V Collector-Base Voltage VcBO 50 30 V Emitter-Base Voltage Ve b o 6.0 5.0 V >C 100 100 mAdc Rating Collector Current — Continuous MOTOROLA SC


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    BC850 BC849 BC849BL, BC850BL, OT-23 O-236AB) BC8498L, BC850BL BC849CL, BC850CL BC8508 PDF

    BT5401

    Abstract: No abstract text available
    Text: Transistors Reel = 500pcs, Bag = lOOpcs. SOT23 Case NPN T ype m iniR eel O rd e r N um ber N P N H ig h F req u en cy BF840 73-8400 BF841 73-8410 M M BTH 10 73-0010 M M BT918 73-0918 N P N L ow N ise M M BT5089 73-5089 M M BT5088 73-5088 BC850B 73-8501 B C850C


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    500pcs, BF840 BF841 BT918 BT5089 BT5088 BC850B C850C BT2484 SR19A BT5401 PDF

    Untitled

    Abstract: No abstract text available
    Text: bbSBSBl OOBMMbfi T 7 T « A P X P hilips S em iconductors NPN general purpose transistor BC849W; BC850W N AMER PHILIPS/DISCRETE FEATURES Product specification • ■ ■ ■ M i b7 E » PIN CONFIGURATION • S- mini package. • Low noise DESCRIPTION NPN transistor in a plastic SOT323


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    BC849W; BC850W OT323 MBC670 BC849W BC849BW; BC850BW PDF

    D024-M

    Abstract: D024M70 MARKING J1A BC849BW BC849CW BC849W BC850BW BC850CW BC850W SOT323 Marking LE
    Text: bbSB^l Philips Semiconductors ODSMMbö T7T IAPX NPN general purpose transistor amer FEATURES philips Product specification BC849W; BC850W /d i s c r e t e b7E ]> PIN CONFIGURATION • S- mini package. • Low noise DESCRIPTION NPN transistor in a plastic SOT323


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    0D24Mbà BC849W; BC850W OT323 -SOT323 BC849W: BC849BW: BC849CW: BC850W: BC850BW: D024-M D024M70 MARKING J1A BC849BW BC849CW BC849W BC850BW BC850CW BC850W SOT323 Marking LE PDF

    BC547 surface mount

    Abstract: BC548 T0-92 bc857 to92 MPSA18 BC547 bc856 to 92 T0-9297 bc857 to 92 TIS97
    Text: Low Noise Amplifiers t.3E D Min Max mA MHz Min BC546 110 450 2 10 300 Typ T0-92(97) 1,2C BC846 110 0.01 10 300 Typ TO-236* 1,2C PNP NPN Package Notes 2 BC556 75 475 2 10 300 Typ TO-92(97) 1,2C BC856 125 475 2 10 300 Typ TO-236* 1,2C 2N2484 100 500 0.01 3


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    tSD1130 BC546 BC846 T0-92 O-236* BC556 BC856 N3962 PN4249 PN4250A BC547 surface mount BC548 bc857 to92 MPSA18 BC547 bc856 to 92 T0-9297 bc857 to 92 TIS97 PDF

    BCS49

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification NPN general purpose transistor FEATURES BC849W; BC850W PIN CONFIGURATION • S- mini package. • Low noise DESCRIPTION NPN transistor in a plastic SOT323 package, primarily intended for low noise stages in tape recorders, hi-fi


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    BC849W; BC850W OT323 BC849W BC850W BCS49 PDF