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    2G RF TRANSISTOR SPICE Search Results

    2G RF TRANSISTOR SPICE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    2G RF TRANSISTOR SPICE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    zo102

    Abstract: MRF873 motorola rf spice QR01 8E-15 734P ideal amplifier RF Power Transistor spice ZO13
    Text: Simulating Class C RF Amplifiers SPICE can be a versatile tool for RF work as long a few simple precautions are taken. Significant parasitics must be included in the circuit description, models of active devices must be represented using subcircuits, and selection of transient analysis options must be considered. The transient options include


    Original     		PDF 870MegHz zo102 MRF873 motorola rf spice QR01 8E-15 734P ideal amplifier RF Power Transistor spice ZO13

    NONLINEAR MODEL LDMOS

    Abstract: No abstract text available
    Text: Slide 1 Extracting RF Mosfet Spice Models MTT 1998 - Baltimore Md. by S. K. Leong Polyfet Rf Devices www.polyfet.com This presentation is available on our web site Slide 2 Why simulate? n n n n n n n Simulation - It’s the only way! Fast accurate results. What if analysis.


    Original     		PDF

    TRANSISTOR MARKING YB

    Abstract: BFP405F marking al
    Text: SIEGET 25 BFP405F NPN Silicon RF Transistor XYs Preliminary data  For low current applications  Smallest Package 1.4 x 0.8 x 0.59mm 3  Noise figure F = 1.25 dB at 1.8 GHz 4 outstanding G ms = 23 dB at 1.8 GHz  Transition frequency f T = 25 GHz  Gold metallization for high reliability


    Original     		PDF BFP405F 100MHz. EHA07307 May-29-2001 TRANSISTOR MARKING YB BFP405F marking al

    marking ams

    Abstract: TRANSISTOR MARKING YB BFP420F EHA07307 transistor bI 240 nh TRANSISTOR DEC07
    Text: SIEGET 25 BFP420F NPN Silicon RF Transistor XYs Preliminary data  For high gain low noise amplifiers  Smallest Package 1.4 x 0.8 x 0.59mm 3  Noise figure F = 1.1 dB at 1.8 GHz 4 outstanding G ma = 20 dB at 1.8 GHz  Transition frequency f T = 25 GHz  Gold metallization for high reliability


    Original     		PDF BFP420F 100MHz. EHA07307 Dec-07-2001 marking ams TRANSISTOR MARKING YB BFP420F EHA07307 transistor bI 240 nh TRANSISTOR DEC07

    TRANSISTOR MARKING YB

    Abstract: BFP420F MARKING 1G TRANSISTOR
    Text: SIEGET 25 BFP420F NPN Silicon RF Transistor XYs Preliminary data  For high gain low noise amplifiers  Smallest Package 1.4 x 0.8 x 0.59mm 3  Noise figure F = 1.1 dB at 1.8 GHz 4 outstanding G ms = 20 dB at 1.8 GHz  Transition frequency f T = 25 GHz  Gold metallization for high reliability


    Original     		PDF BFP420F 100MHz. EHA07307 May-29-2001 TRANSISTOR MARKING YB BFP420F MARKING 1G TRANSISTOR

    TRANSISTOR MARKING YB

    Abstract: TSFP-4 BFP405F CJE marking diode
    Text: SIEGET 25 BFP405F NPN Silicon RF Transistor XYs Preliminary data  For low current applications  Smallest Package 1.4 x 0.8 x 0.59mm 3  Noise figure F = 1.25 dB at 1.8 GHz 4 outstanding G ms = 23 dB at 1.8 GHz  Transition frequency f T = 25 GHz  Gold metallization for high reliability


    Original     		PDF BFP405F 100MHz. EHA07307 Dec-07-2001 TRANSISTOR MARKING YB TSFP-4 BFP405F CJE marking diode

    Untitled

    Abstract: No abstract text available
    Text: SIEGET 25 BFP420F NPN Silicon RF Transistor XYs Preliminary data  For high gain low noise amplifiers  Smallest Package 1.4 x 0.8 x 0.59mm 3  Noise figure F = 1.1 dB at 1.8 GHz 4 outstanding G ma = 20 dB at 1.8 GHz  Transition frequency f T = 25 GHz  Gold metallization for high reliability


    Original     		PDF BFP420F

    TRANSISTOR MARKING FA

    Abstract: EHA07307 CJE marking diode
    Text: SIEGET 25 BFP405F NPN Silicon RF Transistor XYs Preliminary data  For low current applications  Smallest Package 1.4 x 0.8 x 0.59mm 3  Noise figure F = 1.25 dB at 1.8 GHz 4 outstanding G ms = 23 dB at 1.8 GHz  Transition frequency f T = 25 GHz  Gold metallization for high reliability


    Original     		PDF BFP405F TRANSISTOR MARKING FA EHA07307 CJE marking diode

    EHA07307

    Abstract: CJE marking diode
    Text: SIEGET 25 BFP405F NPN Silicon RF Transistor XYs Preliminary data  For low current applications  Smallest Package 1.4 x 0.8 x 0.59mm 3  Noise figure F = 1.25 dB at 1.8 GHz 4 outstanding G ms = 23 dB at 1.8 GHz  Transition frequency f T = 25 GHz  Gold metallization for high reliability


    Original     		PDF BFP405F EHA07307 CJE marking diode

    142001

    Abstract: BFP490 SCT595 SCT-595
    Text: SIEGET 25 BFP490 NPN Silicon RF Transistor 4  For high power amplifiers 5  Compression point P-1dB = 26.5 dBm at 1.8 GHz maxim. available Gain Gma = 8.5 dB at 1.8 GHz 3  Transition frequency fT > 17 GHz 2  Gold metallization for high reliability 1  SIEGET  25 GHz fT - Line


    Original     		PDF BFP490 VPW05980 SCT595 200mA Aug-14-2001 142001 BFP490 SCT595 SCT-595

    Untitled

    Abstract: No abstract text available
    Text: SIEGET 25 BFP420F NPN Silicon RF Transistor XYs Preliminary data  For high gain low noise amplifiers  Smallest Package 1.4 x 0.8 x 0.59mm 3  Noise figure F = 1.1 dB at 1.8 GHz 4 outstanding G ma = 20 dB at 1.8 GHz  Transition frequency f T = 25 GHz  Gold metallization for high reliability


    Original     		PDF BFP420F

    TA 490

    Abstract: SCT-595 490 transistor 09326
    Text: SIEGET 25 BFP 490 NPN Silicon RF Transistor 4  For high power amplifiers 5  Compression point P-1dB = 26.5 dBm at 1.8 GHz maxim. available Gain Gma = 9.5 dB at 1.8 GHz 3  Transition frequency fT > 17 GHz 2  Gold metallization for high reliability 1  SIEGET  25 GHz fT - Line


    Original     		PDF VPW05980 SCT-595 200mA Dec-13-1999 TA 490 SCT-595 490 transistor 09326

    093.266

    Abstract: 09326 V201200 equivalent transistor K 3531 IC 7479 SPICE 2G6 490 transistor BFP490
    Text: SIEGET 25 BFP 490 NPN Silicon RF Transistor 4  For high power amplifiers  Compression point P-1dB = 26.5 dBm at 1.8 GHz 5 maxim. available Gain Gma = 8.5 dB at 1.8 GHz  Transition frequency fT > 17 GHz  Gold metallization for high reliability  SIEGET  25 GHz fT - Line


    Original     		PDF VPW05980 SCT-595 200mA Nov-17-2000 093.266 09326 V201200 equivalent transistor K 3531 IC 7479 SPICE 2G6 490 transistor BFP490

    BFP405 ALs

    Abstract: BFP405
    Text: SIEGET 25 BFP405 NPN Silicon RF Transistor 3  For low current applications 4  For oscillators up to 12 GHz  Noise figure F = 1.25 dB at 1.8 GHz outstanding G ms = 23 dB at 1.8 GHz 2  Transition frequency f T = 25 GHz  Gold metallization for high reliability


    Original     		PDF BFP405 VPS05605 OT343 -j100 Aug-20-2001 BFP405 ALs BFP405

    BFP450

    Abstract: ESD spice
    Text: SIEGET 25 BFP450 NPN Silicon RF Transistor 3  For medium power amplifiers 4  Compression point P -1dB = +19 dBm at 1.8 GHz maximum available gain Gma = 15.5 dB at 1.8 GHz Noise figure F = 1.25 dB at 1.8 GHz 2  Transition frequency f T = 24 GHz  Gold metallization for high reliability


    Original     		PDF BFP450 VPS05605 OT343 50Ohm -j100 Aug-20-2001 BFP450 ESD spice

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS SIEGET 25 BFP 450 NPN Silicon RF Transistor • For medium power amplifiers • Compression point P.1dB = +19dB m at 1.8 GHz maximum available gain Gma = 14 dB at 1.8 GHz Noise figure F = 1.25 dB at 1.8 GHz • Transition frequency f j = 24 GHz • Gold metalization for high reliability


    OCR Scan     		PDF Q62702-F1590 OT-343 2200b IS21I2 fl235bQS 0122QQ7 0235b05

    pin diagram of bf 494 transistor

    Abstract: siemens products transistor
    Text: SIEMENS SIEGET 25 BFP 490 NPN Silicon RF Transistor Preliminary data • For high power amplifiers • Compression point P-idB = 26 5 dBm at 1.8 GHz maxim, available Gain Gma = 9.5 dB at 1.8 GHz • Transition frequency f j > 17 GHz • Gold metalization for high reliability


    OCR Scan     		PDF Q62702-F1721 SCT-595 200mA pin diagram of bf 494 transistor siemens products transistor

    Marking ANs

    Abstract: Transistor C 5198 b 514 transistor BFP450
    Text: SIEMENS SIEGET 25 BFP 450 NPN Silicon RF Transistor • For medium power amplifiers • Compression point P. 1dB = +19 dBm at 1.8 GHz maximum available gain Gma = 14 dB at 1.8 GHz Noise figure F = 1.25 dB at 1.8 GHz • Transition frequency fT = 24 GHz • Gold metalization for high reliability


    OCR Scan     		PDF Q62702-F1590 OT-343 Marking ANs Transistor C 5198 b 514 transistor BFP450

    093.266

    Abstract: pin diagram of bf 494 transistor b 595 transistor schematic PA 1515 transistor transistor BF 502
    Text: SIEMENS SIEGET 25 BFP 490 NPN Silicon RF Transistor Prelim inary data • For high power amplifiers • Compression point P_1dB = 26.5 dBm at 1.8 GHz maxim, available Gain Gma = 9.5 dB at 1.8 GHz • Transition frequency ^ > 1 7 GHz • Gold metalization for high reliability


    OCR Scan     		PDF Q62702-F1721 SCT-595 200mA 093.266 pin diagram of bf 494 transistor b 595 transistor schematic PA 1515 transistor transistor BF 502

    Semiconductor 1346 transistor

    Abstract: DIODE bfp 86 marking 53 Sot-343
    Text: SIEMENS SI EG ET 25 BFP 420 NPN Silicon RF Transistor • For high gain low noise amplifiers • For oscillators up to 10 GHz • Noise figure F = 1.05 dB at 1.8 GHz outstanding Gms = 20 dB at 1.8 GHz • Transition frequency f j = 25 GHz • Gold metalization for high reliability


    OCR Scan     		PDF Q62702-F1591 OT-343 Semiconductor 1346 transistor DIODE bfp 86 marking 53 Sot-343

    BF 914 transistor

    Abstract: transistor R 405 transistor bf 405 transistor 1546 405 marking transistor s parameters noise transistor BF 914
    Text: SIEMENS SIEGET 25 BFP 405 NPN Silicon RF Transistor • For low current applications • For oscillators up to 12 GHz • Noise figure F = 1.15 dB at 1.8 GHz outstanding Gms = 22 dB at 1.8 GHz • Transition frequency f j = 25 GHz • Gold metalization for high reliability


    OCR Scan     		PDF Q62702-F1592 OT-343 BF 914 transistor transistor R 405 transistor bf 405 transistor 1546 405 marking transistor s parameters noise transistor BF 914

    TEA 1091

    Abstract: DIODE bfp 86 siemens rs 1091
    Text: SIEMENS SI EGET 25 BFP 420 NPN Silicon RF Transistor • For high gain low noise amplifiers • For oscillators up to 10 GHz • Noise figure F = 1.05 dB at 1.8 GHz outstanding Gms = 20 dB at 1.8 GHz • Transition frequency f j = 25 GHz • Gold metalization for high reliability


    OCR Scan     		PDF Q62702-F1591 OT-343 IS21I2 235LG5 E35bD5 01EEQQ0 TEA 1091 DIODE bfp 86 siemens rs 1091

    transistor R 405

    Abstract: No abstract text available
    Text: SIEMENS SI EGET 25 BFP 405 NPN Silicon RF Transistor • For low current applications • For oscillators up to 12 GHz • Noise figure F = 1.15 dB at 1.8 GHz outstanding Gms = 22 dB at 1.8 GHz • Transition frequency f j = 25 GHz • Gold metalization for high reliability


    OCR Scan     		PDF Q62702-F1592 OT-343 a235b05 transistor R 405

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS SIEGET 45 BFP 520 NPN Silicon RF Transistor Preliminary data • For highest gain low noise amplifier at 1.8 GHz and 2 mA / 2 V Outstanding Ga = 20 dB Noise Figure F = 0.95 dB • For oscillators up to 15 GHz • Transition frequency f j = 45 GHz


    OCR Scan     		PDF Q62702-F1794 OT-343