Untitled
Abstract: No abstract text available
Text: H Philips Semiconductors B.V. Gerstweg 2, 6534 AE Nijmegen, The Netherlands Report nr. Author Date Department : RNR-T45-97-B-375 : T. Buss : 20 May 1997 : P.G. Transistors & Diodes, Development 2GHz BUFFER-AMPLIFIER WITH THE BFG410W Abstract: This application note contains an example of a Buffer-Amplifier with the new BFG410W Double Poly RFtransistor. The buffer is designed for a frequency f=2GHz. Performance at f=2GHz: Isolation S12~-31dB,
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RNR-T45-97-B-375
BFG410W
BFG410W
-31dB,
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radar sensor
Abstract: sensor radar 24ghz M541 24GHz Radar
Text: MASW-004240-13170W HMIC SP4T Surface Mount Silicon PIN Diode Switch with Integrated Bias Network V1 Features ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Operating Freq. 10 ± 2GHz or 24 ± 2GHz Surface Mount Device Integrated Bias Network No Wire Bonds Required
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MASW-004240-13170W
MASW-004240-13170W
radar sensor
sensor radar 24ghz
M541
24GHz Radar
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MKS1851-6-0-202
Abstract: SA602 UMA1005 SA8025 mch315c104kp SA602 Double Balanced Mixer and Oscillator SA8025DK AN1891 MQE530 SA7025
Text: INTEGRATED CIRCUITS AN1891 SA8025 Fractional-N synthesizer for 2GHz band applications Wing S. Djen Philips Semiconductors 1997 Aug 20 Philips Semiconductors Application note SA8025 Fractional-N synthesizer for 2GHz band applications AN1891 Author: Wing S. Djen
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AN1891
SA8025
20log
MKS1851-6-0-202
SA602
UMA1005
mch315c104kp
SA602 Double Balanced Mixer and Oscillator
SA8025DK
AN1891
MQE530
SA7025
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n685
Abstract: N699 N684 n683 MKS1851-6-0-202 s8025 AN1891 SA7025 n689 MQE530
Text: RF COMMUNICATIONS PRODUCTS AN1891 SA8025 Fractional-N synthesizer for 2GHz band applications Wing S. Djen Philips Semiconductors 1997 Aug 20 Philips Semiconductors Application note SA8025 Fractional-N synthesizer for 2GHz band applications AN1891 Author: Wing S. Djen
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AN1891
SA8025
20log
BB215
PM20-R18M
PM20-R68M
LM317LZ
n685
N699
N684
n683
MKS1851-6-0-202
s8025
AN1891
SA7025
n689
MQE530
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sensor radar 24ghz
Abstract: radar sensor MASW-004240-13170W M541 24GHz Radar
Text: MASW-004240-13170W HMIC SP4T Surface Mount Silicon PIN Diode Switch RoHS Compliant Rev. V1 Features ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Frequency of Operation 10 ± 2GHz or 24 ± 2GHz Surface Mount Device Integrated Bias Network No Wire Bonds Required Low Current Consumption
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MASW-004240-13170W
MASW-004240-13170W
sensor radar 24ghz
radar sensor
M541
24GHz Radar
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sensor radar 24ghz
Abstract: 24GHz Radar MASW-004240-13170W macom pin diode application radar sensor
Text: MASW-004240-13170W M/A-COM Products V1 HMIC SP4T Surface Mount Silicon PIN Diode Switch RoHS Compliant Features ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Frequency of Operation 10 ± 2GHz or 24 ± 2GHz Surface Mount Device Integrated Bias Network No Wire Bonds Required
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MASW-004240-13170W
MASW-004240-13170W
sensor radar 24ghz
24GHz Radar
macom pin diode application
radar sensor
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BF170
Abstract: bf200 datasheet BF200 transistor EL2075CN EL2075C EL2075CS BF200 operational amplifier 2ghz
Text: 2GHz GBWP Gain-of-10 Stable Operational Amplifier Features General Description • 2GHz gain-bandwidth product • Gain-of-10 stable • Conventional voltage-feedback topology • Low offset voltage = 200µV • Low bias current = 2µA • Low offset current = 0.1µA
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Gain-of-10
EL2075C
EL2075C
BF170
bf200 datasheet
BF200 transistor
EL2075CN
EL2075CS
BF200
operational amplifier 2ghz
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Untitled
Abstract: No abstract text available
Text: LTC6401-14 2GHz Low Noise, Low Distortion Differential ADC Driver for DC-140MHz FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTION 2GHz –3dB Bandwidth Fixed Gain of 5V/V 14dB –91dBc IMD3 at 70MHz (Equivalent OIP3 = 49.3dBm)
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LTC6401-14
DC-140MHz
91dBc
70MHz
81dBc
140MHz
135mW)
16-Lead
LT6600-5
LT6600-10
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power amplifier absolute AD 3600 SCHEMATIC
Abstract: 1000 640114 LTC6401-14 0603CS LTC2208 LTC6400 LTC6401 LTC6401-20 LTC6401CUD-14 LTC6401IUD-14
Text: LTC6401-14 2GHz Low Noise, Low Distortion Differential ADC Driver for DC-140MHz FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTION 2GHz –3dB Bandwidth Fixed Gain of 5V/V 14dB –91dBc IMD3 at 70MHz (Equivalent OIP3 = 49.3dBm)
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LTC6401-14
DC-140MHz
91dBc
70MHz
81dBc
140MHz
135mW)
16-Lead
LT6600-5
LT6600-10
power amplifier absolute AD 3600 SCHEMATIC
1000 640114
LTC6401-14
0603CS
LTC2208
LTC6400
LTC6401
LTC6401-20
LTC6401CUD-14
LTC6401IUD-14
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20GHZ
Abstract: FMA3007 MIL-HDBK-263
Text: FMA3007 FMA3007 2GHZ TO 20GHZ MMIC AMPLIFIER Die: 3.15mmx1.78mm Product Description Features The FMA3007 is a high performance 2GHz to 20GHz Gallium Arsenide monolithic travelling wave amplifier. It is suitable for use in broadband communication, instrumentation, and electronic warfare applications. The die is fabricated using RFMD’s
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FMA3007
20GHZ
15mmx1
FMA3007
17dBm
-13dB
-11dB
FMA3007-000
MIL-HDBK-263
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Untitled
Abstract: No abstract text available
Text: FMA3007 FMA3007 2GHZ TO 20GHZ MMIC AMPLIFIER Die: 3.15mmx1.78mm Product Description Features The FMA3007 is a high performance 2GHz to 20GHz Gallium Arsenide monolithic travelling wave amplifier. It is suitable for use in broadband communication, instrumentation, and electronic warfare applications. The die is fabricated using RFMD’s
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FMA3007
20GHZ
15mmx1
FMA3007
17dBm
-13dB
-11dB
FMA3007-000
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transistor bipolar driver schematic
Abstract: BFG425W RNR-T45-97-B-0787 2Ghz amplifier BFG425 BFG425W APPLICATION b0787
Text: Philips Semiconductors B.V. Gerstweg 2, 6534 AE Nijmegen, The Netherlands Report nr. Author Date Department : RNR-T45-97-B-0787 : T. Buss : 29 Sept 1997 : P.G. Transistors & Diodes, Development 2GHz DRIVER-AMPLIFIER WITH THE BFG425W Abstract: This application note contains an example of a Driver-Amplifier with the new BFG425W Double Poly RFtransistor. The driver is designed for a frequency f=2GHz.
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RNR-T45-97-B-0787
BFG425W
BFG425W
15dBm
BFG400W
-30dBm,
BFG425W,
transistor bipolar driver schematic
RNR-T45-97-B-0787
2Ghz amplifier
BFG425
BFG425W APPLICATION
b0787
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BF170
Abstract: BF200 transistor bf200 datasheet EL2075CN EL2075 EL2075CS
Text: T T DUC PRO ACE MEN at E T L r LE P e O E t n S R OB rt Ce c D ED MEN al Suppo il.com/ts M O s C ic r E e n t R h O NData r Te c or www.in ct ouSheet L conta -INTE RS I 1- 888 2GHz GBWP Gain-of-10 Stable Operational Amplifier The EL2075 is a precision voltagefeedback amplifier featuring a 2GHz
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Gain-of-10
EL2075
400MHz
M2075C
is800e-18
bf170
is810e-18
bf200
BF200 transistor
bf200 datasheet
EL2075CN
EL2075CS
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SN62 PB36 ag2
Abstract: MA4SW610B-1
Text: MA4SW610B-1 SP6T PIN Diode Switch with Integrated Bias Network 2 - 18GHz Rev. V2 Features MA4SW610B-1 Layout • Ultra Broad Bandwidth: 2GHz to 18GHz • 1.9dB Insertion Loss, 35dB Isolation at 18GHz • Reliable. Fully Monolithic, Glass Encapsulated Construction
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MA4SW610B-1
18GHz
MA4SW610B-1
SN62 PB36 ag2
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diplexer 10ghz
Abstract: No abstract text available
Text: LTC5533 300MHz to 11GHz Precision Dual RF Power Detector U DESCRIPTIO FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ Two Independent Temperature Compensated Schottky Diode RF Peak Detectors 45dB Channel-to-Channel Isolation at 2GHz Wide Input Frequency Range: 300MHz to 11GHz*
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LTC5533
300MHz
11GHz
11GHz*
32dBm
12dBm
100kHz
diplexer 10ghz
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schottky diode 2GHz to 3GHz
Abstract: diode 1GHz 5533 equivalent rf transmitter receiver 1800Mhz cell phone antenna 0.9ghz to 3ghz properties LTC5533EDE LTC5533 TA03 5GHz RF mixer RSSI mixer AGC
Text: LTC5533 300MHz to 11GHz Precision Dual RF Power Detector U DESCRIPTIO FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ Two Independent Temperature Compensated Schottky Diode RF Peak Detectors 45dB Channel-to-Channel Isolation at 2GHz Wide Input Frequency Range: 300MHz to 11GHz*
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LTC5533
300MHz
11GHz
11GHz*
32dBm
12dBm
LTC4400
OT-23
450kHz
schottky diode 2GHz to 3GHz
diode 1GHz
5533 equivalent
rf transmitter receiver 1800Mhz
cell phone antenna 0.9ghz to 3ghz properties
LTC5533EDE
LTC5533
TA03
5GHz RF mixer
RSSI mixer AGC
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Untitled
Abstract: No abstract text available
Text: LTC5533 300MHz to 11GHz Precision Dual RF Power Detector U DESCRIPTIO FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ Two Independent Temperature Compensated Schottky Diode RF Peak Detectors 45dB Channel-to-Channel Isolation at 2GHz Wide Input Frequency Range: 300MHz to 11GHz*
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LTC5533
300MHz
11GHz
11GHz*
32dBm
12dBm
LTC4400
OT-23
450kHz
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Untitled
Abstract: No abstract text available
Text: InGaAs APD Photo Diode Modules 4 Olsen Avenue, Edison, NJ 08820 USA phone: 732 549-9001 • fax: (732) 906-1559 www.laserdiode.com ISO 9001:2008 Certified • InGas APD Photodiode • Low Dark Current • High Speed 2GHz • 800nm to 1700nm Response • Miniature Package
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800nm
1700nm
3080-50R
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Untitled
Abstract: No abstract text available
Text: BA 892-02V Silicon Rf Switching Diode For band switching in TV / VTR tuners up to 2GHz 2 Low forward resistance, small capacitance, small inductance 1 VES05991 Type Marking Pin Configuration Package BA 892-02V AA 1=C SC-79 2=A Maximum Ratings Parameter
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92-02V
VES05991
SC-79
Sep-08-2000
100MHz
EHD07009
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BA892-02V
Abstract: SC79
Text: BA892-02V Silicon Rf Switching Diode For band switching in TV / VTR 2 tuners up to 2GHz Low forward resistance, small capacitance, small inductance 1 VES05991 Type Marking Pin Configuration Package BA892-02V AA 1=C SC79 2=A Maximum Ratings Parameter Symbol
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BA892-02V
VES05991
Jul-11-2001
100MHz
EHD07009
EHD07010
BA892-02V
SC79
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VCO circuit diagram
Abstract: Philips varicap "VCO circuit diagram" varicap tv varicap diodes Varicap transistor use in oscillator uhf varicap diode varicap diode varicap diodes data sheet
Text: A low Cost 1.5 to 2.2GHz Voltage Controlled Oscillator Advance Note AN160 The introduction of the Zarlink Semiconductor range of 2GHz synthesisers and prescalers for low cost applications such as consumer satellite TV reception has created the requirement
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AN160
VCO circuit diagram
Philips varicap
"VCO circuit diagram"
varicap tv
varicap diodes
Varicap
transistor use in oscillator
uhf varicap diode
varicap diode
varicap diodes data sheet
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Untitled
Abstract: No abstract text available
Text: BA 892 Silicon Rf Switching Diode For band switching in TV / VTR tuners up to 2GHz 2 Low forward resistance, small capacitance, small inductance 1 VES05991 Type Marking Pin Configuration Package BA 892 A 1=C SCD-80 2=A Maximum Ratings Parameter Symbol
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VES05991
SCD-80
Oct-04-1999
100MHz
EHD07009
EHD07010
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Untitled
Abstract: No abstract text available
Text: Final Electrical Specifications LTC1757-1/LTC1757-2 Single/Dual Band RF Power Controllers • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO Dual Band RF Power Amplifier Control LTC1757-2 Internal Schottky Diode Detector Wide Input Frequency Range: 850MHz to 2GHz
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LTC1757-1/LTC1757-2
LTC1757-2)
850MHz
750kHz
900kHz
LTC1757-1/LTC1757-2
LTC1757-1
900MHz
1800MHz
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varactor diodes application
Abstract: No abstract text available
Text: Hyperabrupt Varactor Diodes Commercial Diode Series Description The hyperabrupt tuning diodes in this series are designed to meet the needs ol today's most commercial applications. Frequencies of operation range from DC to 2GHz. Assembled and tested in surface mountable
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OT-23
SMV3806-99
SMV1204-13
SMV1204-60
SMV1204-04
SMV1204-05
SMV1204-99
SMV1200-04
varactor diodes application
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