Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBTA56 TRANSISTOR PNP SOT–23 FEATURES General Purpose Amplifier Applications MARKING: 2GM 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
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OT-23
MMBTA56
-10mA
-100mA
-100mA,
100MHz
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Untitled
Abstract: No abstract text available
Text: MMBTA55 THRU MMBTA56 Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 Features • This device is designed for general purpose amplifier applications at collector current to 300mA Marking Code: MMBTA55=2H MMBTA56=2GM
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MMBTA55
MMBTA56
300mA
MMBTA55
MMBTA56
OT-23
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Untitled
Abstract: No abstract text available
Text: MCC MMBTA55 THRU MMBTA56 omponents 20736 Marilla Street Chatsworth !"# $ % !"# Features • This device is designed for general purpose amplifier applications at collector current to 300mA Marking Code: MMBTA55=2H MMBTA56=2GM
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MMBTA55
MMBTA56
OT-23
300mA
MMBTA56
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marking 2GM x
Abstract: No abstract text available
Text: MCC MMBTA55 THRU MMBTA56 omponents 20736 Marilla Street Chatsworth !"# $ % !"# Features • This device is designed for general purpose amplifier applications at collector current to 300mA Marking Code: MMBTA55=2H MMBTA56=2GM
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MMBTA55
MMBTA56
300mA
MMBTA55
MMBTA56
OT-23
marking 2GM x
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PDF
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Driver Transistors PNP Silicon LMBTA55WT1G LMBTA56WT1G S-LMBTA55WT1G S-LMBTA56WT1G We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101
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LMBTA55WT1G
LMBTA56WT1G
S-LMBTA55WT1G
S-LMBTA56WT1G
AEC-Q101
LMBTA55
LMBTA56
SC-70
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Marking 2GM
Abstract: LMBTA56LT1G LMBTA55LT1G LMBTA56 2GM sot LMBTA55 2GM j sot23 6 device Marking 2GM 4
Text: LESHAN RADIO COMPANY, LTD. Driver Transistors PNP Silicon LMBTA55LT1G LMBTA56LT1G We declare that the material of product compliance with RoHS requirements. 3 1 2 MAXIMUM RATINGS Rating Symbol Value LMBTA55 LMBTA56 Collector–Emitter Voltage V CEO –60 –80
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LMBTA55LT1G
LMBTA56LT1G
LMBTA55
LMBTA56
236AB)
LMBTA55LT1G
OT-23
Marking 2GM
LMBTA56LT1G
LMBTA56
2GM sot
2GM j
sot23 6 device Marking
2GM 4
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Driver Transistors PNP Silicon LMBTA55LT1G LMBTA56LT1G S-LMBTA55LT1G S-LMBTA56LT1G We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101
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LMBTA55LT1G
LMBTA56LT1G
S-LMBTA55LT1G
S-LMBTA56LT1G
AEC-Q101
LMBTA55
LMBTA56
236AB)
LMBTA55LT1G
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marking 2GM
Abstract: LMBTA55WT1G 2GM transistor LMBTA55 sc70 marking 2H 2GM j marking 2GM x
Text: LESHAN RADIO COMPANY, LTD. Driver Transistors PNP Silicon LMBTA55WT1G LMBTA56WT1G We declare that the material of product compliance with RoHS requirements. 3 1 MAXIMUM RATINGS Rating Symbol Value LMBTA55 LMBTA56 2 Unit Collector–Emitter Voltage V CEO –60
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LMBTA55WT1G
LMBTA56WT1G
LMBTA55
LMBTA56
SC-70
LMBTA55WT1G
marking 2GM
2GM transistor
sc70 marking 2H
2GM j
marking 2GM x
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Driver Transistors PNP Silicon LMBTA55LT1G LMBTA56LT1G S-LMBTA55LT1G S-LMBTA56LT1G We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101
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Original
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LMBTA55LT1G
LMBTA56LT1G
S-LMBTA55LT1G
S-LMBTA56LT1G
AEC-Q101
LMBTA55
LMBTA56
236AB)
LMBTA55LT1G
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PDF
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MMBTA56LT1
Abstract: marking code 2GM SOT 23
Text: MMBTA55LT1, MMBTA56LT1 MMBTA56LT1 is a Preferred Device Driver Transistors PNP Silicon http://onsemi.com Features • Pb−Free Package is Available COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Collector −Emitter Voltage Value VCEO MMBTA55 MMBTA56 Collector −Base Voltage
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MMBTA55LT1,
MMBTA56LT1
MMBTA56LT1
MMBTA55
MMBTA56
MMBTA55LT1
OT-23
marking code 2GM SOT 23
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PDF
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Driver Transistors PNP Silicon LMBTA55LT1G LMBTA56LT1G 3 COLLECTOR Pb-free package is available. The suffix G means Pb-free. 1 BASE 3 2 EMITTER 1 2 MAXIMUM RATINGS Rating Symbol Value LMBTA55 LMBTA56 Collector–Emitter Voltage V
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LMBTA55LT1G
LMBTA56LT1G
LMBTA55
LMBTA56
236AB)
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PDF
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2GM sot
Abstract: MMBTA56LT1 2gm marking code 2gm transistor MMBTA55 MMBTA55LT1 MMBTA55LT3 MMBTA56 MMBTA56LT1G MMBTA56LT3
Text: MMBTA55LT1, MMBTA56LT1 MMBTA56LT1 is a Preferred Device Driver Transistors PNP Silicon http://onsemi.com Features • Pb−Free Package is Available COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Collector −Emitter Voltage Value Unit VCEO MMBTA55 MMBTA56 Collector −Base Voltage
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MMBTA55LT1,
MMBTA56LT1
MMBTA56LT1
MMBTA55
MMBTA56
MMBTA55LT1/D
2GM sot
2gm marking code
2gm transistor
MMBTA55
MMBTA55LT1
MMBTA55LT3
MMBTA56
MMBTA56LT1G
MMBTA56LT3
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PDF
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Untitled
Abstract: No abstract text available
Text: Driver Transistors PNP Silicon MMBTA55LT1 MMBTA56LT1 3 COLLECTOR 1 BASE 3 2 EMITTER 1 2 MAXIMUM RATINGS Rating Symbol Value MMBTA55 MMBTA56 Collector–Emitter Voltage V CEO –60 –80 Vdc Collector–Base Voltage V CBO –60 –80 Vdc Emitter–Base Voltage
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MMBTA55LT1
MMBTA56LT1
MMBTA55
MMBTA56
236AB)
AmbientMBTA56LT1
100mAdc,
10mAdc)
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PDF
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2GM sot
Abstract: No abstract text available
Text: ᄰྯ! General Purpose Transistors General Purpose Transistors FHTA56 ᄰྯ DESCRIPTION & FEATURES 概述及特點 Complementary to FHTA06 與 FHTA06 互補 SOT-23 PIN ASSIGNMENT 引腳說明 PIN NAME FUNCTION PIN NUMBER 引腳序號 管腳符號
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OT-23
FHTA56
FHTA06
OT-23
hFE1FHTA56
-10mA
-100mA
2GM sot
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Untitled
Abstract: No abstract text available
Text: SOT-23 Plastic-Encapsulate Transistors MMBTA55LT1 MMBTA56LT1 TRANSISTOR（ PNP ） SOT—23 1. BASE 2. EMITTER 3. COLLECTOR １．０ FEATURES Power dissipation PCM : 0.225 W（Tamb=25℃） Collector current ICM : -0.5 A Collector-base voltage VCBO : MMBTA55: -60 V
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OT-23
MMBTA55LT1
MMBTA56LT1
MMBTA55:
MMBTA56:
MMBTA55
MMBTA56
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Untitled
Abstract: No abstract text available
Text: S O T- 2 3 B I P O L A R T R A N S I S T O R S NPN TRANSISTORS • New Product Marking VCEO hFE @VCE/IC VCEsat @IC/IB ICES @VCE Type Code V V/mA max.V mA/mA max.nA V BC817-16 6A 45 100-250 1/100 0.7 500/50 100 45 BC817-25 6B 45 160-400 1/100 0.7 500/50 100
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BC817-16
BC817-25
BC817-40
BC818-16
BC818-25
BC818-40
BC846A
BC846B
BC847A
BC847B
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PDF
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBTA55LT1 MMBTA56LT1 TRANSISTOR（ PNP ） SOT—23 1. BASE 2. EMITTER 3. COLLECTOR １．０ FEATURES Power dissipation PCM : 0.225 W（Tamb=25℃） Collector current
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Original
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OT-23
MMBTA55LT1
MMBTA56LT1
MMBTA55:
MMBTA56:
MMBTA55
MMBTA56
MMBTA56LT1:
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2GM sot-23 transistor
Abstract: transistor MARKING 560 pnp sot23 TS560 marking 2GM 2GM TRANSISTOR
Text: NEW PRODUCT NEW PRODUCT NEW PRODUCT MMBTA56 Small Signal Transistors PNP SOT-23 FEATURES t PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. t As complementary type, the NPN transistor MMBTA06 is recommended. t This transistor is also available in the
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MMBTA56
OT-23
MMBTA06
MPSA56.
OT-23
2GM sot-23 transistor
transistor MARKING 560 pnp sot23
TS560
marking 2GM
2GM TRANSISTOR
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2gm transistor
Abstract: marking 2GM "MARKING CODE 2GM" 2GM sot PNP Epitaxial Silicon Transistor sot-23 MMBTA06 MMBTA56 MPSA56 marking code 2GM SOT 23
Text: NEW PRODUCT NEW PRODUCT NEW PRODUCT MMBTA56 Small Signal Transistors PNP SOT-23 FEATURES ♦ PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. .122 (3.1) .118 (3.0) .016 (0.4) .056 (1.43) .052 (1.33) ♦ This transistor is also available in the
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MMBTA56
OT-23
MPSA56.
MMBTA06
OT-23
2gm transistor
marking 2GM
"MARKING CODE 2GM"
2GM sot
PNP Epitaxial Silicon Transistor sot-23
MMBTA56
MPSA56
marking code 2GM SOT 23
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2GM sot-23 transistor
Abstract: a56 transistor 2GM H transistor 2GM surface transistor 2GM sot 2gm transistor transistor A56 MMBTA55 2H SOT23 marking code 2GM SOT 23
Text: BL Galaxy Electrical Production specification PNP General Purpose Transistor FEATURES z Epitaxial planar die construction. z Complementary NPN types available MMBTA55/A56 Pb Lead-free MMBTA05/MMBTA06 APPLICATIONS z Ideal for medium NPN amplification and switching.
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MMBTA55/A56
MMBTA05/MMBTA06)
OT-23
MMBTA55
MMBTA56
2GM sot-23 transistor
a56 transistor
2GM H transistor
2GM surface transistor
2GM sot
2gm transistor
transistor A56
MMBTA55
2H SOT23
marking code 2GM SOT 23
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PDF
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marking 2GM
Abstract: 2GM transistor marking M29 MMBTA56LT1 M292 2GM j MMBTA55 MMBTA55LT1 MMBTA56
Text: LESHAN RADIO COMPANY, LTD. Driver Transistors PNP Silicon MMBTA55LT1 MMBTA56LT1 3 COLLECTOR 1 BASE 3 2 EMITTER 1 2 MAXIMUM RATINGS Rating Symbol Value MMBTA55 MMBTA56 Collector–Emitter Voltage V CEO –60 –80 Vdc Collector–Base Voltage V CBO –60 –80
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MMBTA55LT1
MMBTA56LT1
MMBTA55
MMBTA56
236AB)
MMBTA55LT1
100mAdc,
10mAdc)
marking 2GM
2GM transistor
marking M29
MMBTA56LT1
M292
2GM j
MMBTA56
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PDF
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2gm transistor
Abstract: vishay TRANSISTOR Sot-23 MARKING CODE 2GM sot-23 transistor 2GM sot marking code 2GM marking 2GM marking codes sot-23 2GM 20FEB02
Text: MMBTA56 Vishay Semiconductors formerly General Semiconductor Small Signal Transistor PNP TO-236AB (SOT-23) .122 (3.1) .110 (2.8) .016 (0.4) Top View Mounting Pad Layout .056 (1.43) .052 (1.33) 3 .016 (0.4) Pin Configuration 1 = Base 2 = Emitter 3 = Collector
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MMBTA56
O-236AB
OT-23)
MMBTA06
100mA
100mA,
100mA
100MHz
2gm transistor
vishay TRANSISTOR Sot-23 MARKING CODE
2GM sot-23 transistor
2GM sot
marking code 2GM
marking 2GM
marking codes sot-23 2GM
20FEB02
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sot-23 marking 7z
Abstract: MARKING A8C SOT-23 7y sot23 MMBR941BLT1 SOT-23 A8A marking 7m marking 7Y SOt23 RF Transistors markING 7Z MMBR920LT1
Text: SOT-23 TRANSISTORS continued Plastic-Encapsulated Bias Resistor Transistors for General-Purpose Applications Pinout: 1-Base, 2-Emltter, 3-Collector hpE@ lc V (BR)CEO Marking Device NPN PNP NPN PNP Volts (Min) MMUN2211LT1 MMUN2212LT1 MMUN2213LT1 MMUN2214LT1
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OCR Scan
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OT-23
MMUN2211LT1
MMUN2212LT1
MMUN2213LT1
MMUN2214LT1
MMUN2111LT1
MMUN2112LT1
MMUN2113LT1
MMUN2114LT1
MMBTA06LT1
sot-23 marking 7z
MARKING A8C SOT-23
7y sot23
MMBR941BLT1
SOT-23 A8A
marking 7m
marking 7Y SOt23
RF Transistors
markING 7Z
MMBR920LT1
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Untitled
Abstract: No abstract text available
Text: M AXIM U M RATINGS Symbol MMBTA65 MMBTA56 VCEO -6 0 -8 0 Vdc Collector-Base Voltage v CBO -6 0 -8 0 Vdc Emitter-Base Voltage v EBO -4 .0 Vdc 'c - 500 m Adc Rating Collector-Emitter Voltage Collector Current — Continuous Unit MMBTA55LT1 MMBTA56LT1* CASE 318-07, STYLE 6
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OCR Scan
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MMBTA65
MMBTA56
MMBTA55LT1
MMBTA56LT1*
OT-23
O-236AB)
OT-23
BTA55
BTA56
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