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    2K 622 Search Results

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    VPG Transducers Y14532K62245T9L

    RES 2.62245K OHM 0.6W 0.01% RAD
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    DigiKey Y14532K62245T9L Bulk 25
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    TDK Corporation B32529C6222K289

    Film Capacitors 0.0022uF 400volt 10%
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    Mouser Electronics B32529C6222K289 19,654
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    Vishay Intertechnologies RCC120622K0FKEA

    Thick Film Resistors - SMD 22Kohms 1% 100ppm
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    Mouser Electronics RCC120622K0FKEA 16,569
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    Vishay Intertechnologies RCG120622K0JNEA

    Thick Film Resistors - SMD .25watt 22kohms 5% 1206 200ppm
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    Mouser Electronics RCG120622K0JNEA 15,959
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    TDK Corporation B32621A6222K189

    Film Capacitors .0022uF 630volt 10%
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    Mouser Electronics B32621A6222K189 6,858
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    2K 622 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    CMOS 16-Bit Priority Encoder

    Abstract: P2800 DS4440 content addressable memory Wired mae p2800s
    Text: COMMERCIAL-IN-CONFIDENCE P2800 FEBRUARY 1996 PRELIMINARY INFORMATION DS4468-1.0 P2800 2K x 64BIT MULTI-PORT CONTENT ADDRESSABLE MEMORY The P2800 2K x 64bit Multi-port Content Addressable Memory CAM is designed for address filtering, routing and translation applications in Ethernet, Token Ring, SMDS and


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    PDF P2800 DS4468-1 64BIT P2800 OC-12 622MBits CMOS 16-Bit Priority Encoder DS4440 content addressable memory Wired mae p2800s

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet May 27, 2005 TSI-2 2k x 2k Time-Slot Interchanger 1 Introduction This document consists of two major sections: „ The TTSI002081 device hardware description. This section contains ball information, operating conditions, dc electrical characteristics, timing diagrams, ac characteristics, and packaging information.


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    PDF TTSI002081 TTSI-144 0A-301C, DS05-116STSI

    TAG 8446

    Abstract: tag 8438 TAG 8426 TAG 8430 TXC-06920-MB TAG 8434 GMII VLAN Tag TSX 07 31 2428 error code cdb 400E structure of GMII packet with VLAN Tag
    Text: TM Envoy-XE Device Metro Ethernet Switch TXC-06920 DATA SHEET PRELIMINARY TXC-06920-MB, Ed. 2 March 2006 FEATURES APPLICATIONS • IEEE 802.1Q compliant Ethernet switch supporting up to 8K Ethernet MAC addresses, 2K Active Network Tags VLANs, QTAG, MPLS or Martini and up to 2K


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    PDF TXC-06920 TXC-06920-MB, TAG 8446 tag 8438 TAG 8426 TAG 8430 TXC-06920-MB TAG 8434 GMII VLAN Tag TSX 07 31 2428 error code cdb 400E structure of GMII packet with VLAN Tag

    chilled water system

    Abstract: No abstract text available
    Text: Data Sheet, Revision 3 September 21, 2005 TSI-2 2k x 2k Time-Slot Interchanger 1 Introduction The last issue of this data sheet was August 31, 2005. A change history is included in Section 11 Change History on page 61. Red change bars have been installed on all text, figures, and tables that were added or changed. All changes to the text


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    PDF condit138 DS05-116STSI-3 DS05-116STSI-2) chilled water system

    AMCC Evros

    Abstract: hdlc tigris 31x31mm
    Text: MyAMCC - Product Summary Home MyAMCC Contact Us Site Map Help Knowledge Center Tigris OC-48 S4811 Search 2.5GHz, 2k channels HDLC controller View All Products ✔ Search Products Framer/Mapper MISSION Network Processor MISSION Search Documents General Description


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    PDF OC-48 S4811) 488Gbps. S4811 AMCC Evros hdlc tigris 31x31mm

    smd marking RA2 transistor

    Abstract: Zener diode smd marking ck smd marking RA1 transistor SMD ZENER DIODE 73a smd zener diode code k2 TRANSISTOR SMD MARKING CODE 2t C1005y5v1c104zt PS2 Series connector Zener diode smd marking 27 PIC16CXX
    Text: PIC16C62X EPROM-Based 8-Bit CMOS Microcontroller Devices included in this data sheet: Pin Diagrams • PIC16C620 PIC16C621 PIC16C622 PDIP, SOIC, Windowed CERDIP Device Program Memory Data Memory PIC16C620 512 80 PIC16C621 1K 80 PIC16C622 2K 128 •


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    PDF PIC16C62X PIC16C620 PIC16C621 PIC16C622 DS30235E smd marking RA2 transistor Zener diode smd marking ck smd marking RA1 transistor SMD ZENER DIODE 73a smd zener diode code k2 TRANSISTOR SMD MARKING CODE 2t C1005y5v1c104zt PS2 Series connector Zener diode smd marking 27 PIC16CXX

    ldr 6k

    Abstract: 200H MDT10P22 MDT10P23
    Text: MDT10P23 AE 1. General Description This EPROM-Based 8-bit micro-controller uses a fully static CMOS design technology to achieve high speed, small size, low power and high noise immunity. On chip memory includes 2K words EPROM and80 bytes static RAM. Four comparator inputs with external Vref


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    PDF MDT10P23 and80 14-bit MDT10P23 ldr 6k 200H MDT10P22

    STI5500

    Abstract: STi55 STi5500 st20 ST20 TOOLSET ST20C2 set top box block diagram LS 2027 Final Audio video rgb splitter amplifier schematic ST20 twin decoder A215
    Text: STi5500 SET TOP BOX BACKEND DECODER WITH INTEGRATED HOST PROCESSOR PRELIMINARY DATA FEATURES • Enhanced 32-bit VL-RISC CPU - 50 MHz clock • fast integer/bit operation and very high code density ■ High performance memory/cache subsystem • 2 Kbytes Instruction cache, 2K bytes SRAM,


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    PDF STi5500 32-bit STI5500 STi55 STi5500 st20 ST20 TOOLSET ST20C2 set top box block diagram LS 2027 Final Audio video rgb splitter amplifier schematic ST20 twin decoder A215

    ldr 6k

    Abstract: 200H 400H MDT2030
    Text: MDT2030 AE 150 µs, 20 ms, 40 ms, 80 ms 1. General Description u This ROM-Based 8-bit micro-controller uses a fully static CMOS technology process to achieve high programmable prescaler u speed, small size, the low power and high noise On chip memory includes 2K words EPROM, and


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    PDF MDT2030 MDT2030 ldr 6k 200H 400H

    49LF002A

    Abstract: 2732 eprom 49lf003a N82802AB EPROM 271024 49lf004a IC 2732 pdf datasheet 6264 SRAM ic 6264 pdf datasheet 49LF008A
    Text: WICE-8MA EPROM/SRAM Emulaor WICE-8MA Capacity Quantity Device Low voltage Device 2K 8 2 2716 4K 8 2 2732 8K 8 2 2764 16K 8 2 27128 32K 8 2 27256 64K 8 2 27512 128K 8 2 27010 27LV010 256K 8 2 27020 27LV020 512K 8 2 27040 27LV040 1024K 8 1 27080 27LV080 64K 16


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    PDF 27LV010 27LV020 27LV040 1024K 27LV080 27LV1024 27LV2048 27LV4096 5000m 9X/2000/NT 49LF002A 2732 eprom 49lf003a N82802AB EPROM 271024 49lf004a IC 2732 pdf datasheet 6264 SRAM ic 6264 pdf datasheet 49LF008A

    TRANSISTOR 1383

    Abstract: ST2064 74290 Counter he 8050 d transistor 002 545 18 05 LT 862 PAGE34 Sitronix W65C02S applicaion of sequence detector
    Text: ST Sitronix ST2064 8 BIT Microcontroller with 64K bytes ROM PRELIMINARY Notice: This is not a final specification. Some parameters are subject to change. 1. FEATURES „ „ „ „ „ „ „ „ „ „ Totally static 65C02S CPU ROM: 64K x 8-bit RAM: 2K x 8-bit Stack: Up to 128-level deep


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    PDF ST2064 65C02S 128-level timer/16-bit PAGE41 PAGE33 PAGE42 PAGE40 TRANSISTOR 1383 ST2064 74290 Counter he 8050 d transistor 002 545 18 05 LT 862 PAGE34 Sitronix W65C02S applicaion of sequence detector

    Untitled

    Abstract: No abstract text available
    Text: Si GEC PLESSEY S 1' M I C. O l\ D l. PRELIMINARY INFORMATION 1 l K S P2800 2K X 64BIT MULTI-PORT CONTENT ADDRESSABLE MEMORY The P2800 2K x 64bit Multi-port Content Addressable Memory (CAM) is designed for address filtering, routing and translation applications in Ethernet, Token Ring, SMDS and


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    PDF P2800 64BIT P2800 OC-12 622MBits 16-bit

    Untitled

    Abstract: No abstract text available
    Text: 9Ë GEC PLESSEY F e b r u a r y 1997 PRELIMINARY INFORMATION S E M I C O N D U C T O R S DS4468-2.2 P2800 2K x 64BIT MULTI-PORT CONTENT ADDRESSABLE MEMORY The P2800 2K x 64bit Multi-port Content Addressable Memory CAM is designed for address filtering, routing and


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    PDF DS4468-2 P2800 64BIT P2800 OC-12 622MBits

    r2s3

    Abstract: TDA 2025 chip TDA 2025 tda 2015 UTC 2025 P3TC HA 4016 Z8603 utc 1018 centrifuge machine for acceleration
    Text: Zilog PRELIMINARY IN FO R M A TIO N P r o d u c t S p e c ific a tio n June 1987 Z8 Z8611 MCU Military Electrical Specification Z8603 Prototyping Device with 2K EPROM Interface F a a tu rM G e n ara l D e sc rip tio n • C om plete m icrocom puter, 2K 8601 or 4K


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    PDF Z8611 Z8603 144-byte r2s3 TDA 2025 chip TDA 2025 tda 2015 UTC 2025 P3TC HA 4016 utc 1018 centrifuge machine for acceleration

    KMM536512B8

    Abstract: KMM53651 KMM536512B
    Text: KMM536512B DRAM MODULES 512KX36 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM M 536512B is a 51 2K bit X 36 Dynamic RAM high density memory module. The Sam­ sung KM M 536512B consist of sixteen CMOS 2 5 6 K X 4


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    PDF KMM536512B 512KX36 536512B 20-pin 18-pin 72-pin KMM53651 536512B- KMM536512B8 KMM536512B

    Untitled

    Abstract: No abstract text available
    Text: M O SEL VTTEUC MS62256CLL 3 2K x 8 CMOS STATIC RAM Features Descriptions • High-speed - 70/100 ns ■ Low Power dissipation: — 385mW Max Operating — 16.5mW (Max) Standby — 0.55mW (Max) Power-down — 5pA (Max) Iqcdr ■ Fully static operation ■ All inputs and outputs directly TTL compatible


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    PDF MS62256CLL 385mW MS62256CLL 144-bit MS62256CLL-70PC MS62256CLL-70FC MS62256CLL-70NC MS62256CLL-10PC MS62256CLL-10FC MS62256CLL-10NC

    Untitled

    Abstract: No abstract text available
    Text: $ M 28C17A ic r o c h ip 16K 2K x 8 CMOS EEPROM PACKAGE TYPE FEATURES • Fast Read Access Time— 150 ns • CMOS Technology for Low Pow er Dissipation - 30 m A Active - 100 (iA Standby • Fast Byte Write Time— 200 us or ms • Data Retention >10 years


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    PDF 28C17A DS11127E-page

    27D014

    Abstract: No abstract text available
    Text: HM-92570 H A R R IS SEMICONDUCTOR 256K Buffered Synchronous CMOS RAM Module January 1992 Features Description • The HM-92570 is a fully buffered 256K bit CMOS RAM Module con­ sisting of sixteen HM-6516 2K x 8 CMOS RAMs, two 82C82 CMOS octal latching bus drivers, and two HCT-138 CMOS 3:8 decoders in


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    PDF HM-92570 HM-92570 HM-6516 82C82 HCT-138 27D014

    idt p28-2

    Abstract: j32-1 32-PIN IDT 600 mil Plastic DIP P28-1 J321
    Text: M OSEL MS7203/ 7204 2K x 9, 4K x 9 CMOS FIFO FEATURES DESCRIPTION • First-ln/First-O ut static RAM based dual port memory The M OSEL MS7203/7204 are dual-port static RAM based CM O S First-In/First-Out FIFO mem ories organized in nine-bit wide words. The devices are configured so that


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    PDF MS7203/ 28-PIN -35PC MS7204-35PC P28-1 MS7203-35NC MS7204-35NC P28-2 MS7203-35JC MS7204-35JC idt p28-2 j32-1 32-PIN IDT 600 mil Plastic DIP P28-1 J321

    Untitled

    Abstract: No abstract text available
    Text: M ic r o c h ip 2 8 1 A 7 16K 2K X 8 CMOS EEPROM PACKAGE TYPES FEATURES • Fast Read Access Time— 150 ns • CMOS Technology for Low Power Dissipation - 30 mA Active - 100 |iA Standby • Fast Byte Write Time— 200 us or 1 ms • Data Retention >200 years


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    PDF DS11127G-page 28C17A 28C17A 8x20mm bi0320i

    MS7204-35PC

    Abstract: LC 7204
    Text: MOSEL MS7203/ 7204 2K x 9, 4K x 9 CMOS FIFO FEATURES DESCRIPTION • First-In/First-O ut static RAM based dual port m em ory The M O SEL M S7203/7204 are dual-port static RAM based CM OS First-ln/First-O ut FIFO m em ories organized in nine-bit wide words. The devices are configured so that


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    PDF MS7203/ S7203/7204 MS7203-80NC MS72O3-0OJC MS72O3-0OFC MS7204-25JC MS7204-35PC MS7204-35NC MS7204-35JC MS7204-35FC LC 7204

    Untitled

    Abstract: No abstract text available
    Text: $ 28C17A M ic r o c h ip 16K 2K x 8 CMOS EEPROM • Fast Read Access Time— 150 ns • CMOS Technology for Low Power Dissipation — 30 mA Active — 100 nA Standby • Fast Byte Write Time— 200 |is or 1 ms • Data Retention >10 years • High Endurance - Minimum 104 Erase/Write Cycles


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    PDF 28C17A 32-Pin 28C17AF 8x20mm 28C17A DS11127E-page

    Untitled

    Abstract: No abstract text available
    Text: M 28C17A ic r o c h ip 16K 2K x 8 CMOS EEPROM PACKAGE TYPE FEATURES • Fast Read A ccess Time— 150 ns • CMOS Technology fo r Low P ow er Dissipation - 30 m A Active - 100 (iA S tandby • Fast Byte W rite Time— 200 |xs o r 1 ms • Data Retention >10 years


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    PDF 28C17A DS11127E-page

    Untitled

    Abstract: No abstract text available
    Text: H A R R HM-92560 IS S E M I C O N D U C T O R 256K Synchronous CMOS RAM Module January 1992 Features Description • Low Standby Current. 500|iA The HM-92560 is a high density 256K bit CMOS RAM module. Six­ teen synchronous HM-6516 2K x 8 CMOS RAMs in Leadless Chip


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    PDF HM-92560 HM-92560 HM-6516 HM92560