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    2N 2369 A Search Results

    2N 2369 A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SK2369-A Renesas Electronics Corporation Switching N-Channel Power Mosfet Visit Renesas Electronics Corporation
    OPA2369AIDGKT Texas Instruments 1.8V, 700nA, Zero-Crossover Rail-To-Rail I/O Operational Amplifier 8-VSSOP -40 to 85 Visit Texas Instruments Buy
    OPA2369AIDGKTG4 Texas Instruments 1.8V, 700nA, Zero-Crossover Rail-To-Rail I/O Operational Amplifier 8-VSSOP -40 to 85 Visit Texas Instruments Buy
    OPA2369AIDCNT Texas Instruments 1.8V, 700nA, Zero-Crossover Rail-To-Rail I/O Operational Amplifier 8-SOT-23 -40 to 85 Visit Texas Instruments Buy
    OPA2369AIDGKR Texas Instruments 1.8V, 700nA, Zero-Crossover Rail-To-Rail I/O Operational Amplifier 8-VSSOP -40 to 85 Visit Texas Instruments Buy
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    2N 2369 A Price and Stock

    Central Semiconductor Corp 2N2369A-PBFREE

    TRANS NPN 15V 0.2A TO-18
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    Microchip Technology Inc 2N2369A

    TRANS NPN 15V TO18
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    Central Semiconductor Corp CP396V-2N2369A-CT20

    TRANS NPN 15V 0.2A DIE
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    DigiKey CP396V-2N2369A-CT20 Tray 3 1
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    Microchip Technology Inc 2N2369AUA

    TRANS NPN 15V SMD
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    Microchip Technology Inc JAN2N2369A

    TRANS NPN 15V TO18
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    NAC JAN2N2369A 85
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    2N 2369 A Datasheets (105)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N2369A Boca Semiconductor NPN SILICON PLANAR EPITAXIAL TRANSISTORS - Pol=NPN / Pkg=TO18 / Vceo=40 / Ic=0.2 / Hfe=40-120 / fT(Hz)=500M / Pwr(W)=0.36 Original PDF
    2N2369A Central Semiconductor Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS NPN 15V 200MA TO-18 Original PDF
    2N2369A Microsemi NPN BIPOLAR TRANSISTOR - Pol=NPN / Pkg=TO18 / Vceo=40 / Ic=0.2 / Hfe=40-120 / fT(Hz)=500M / Pwr(W)=0.36 Original PDF
    2N2369A Microsemi NPN Silicon Switching Transistor Original PDF
    2N2369A Motorola Switching Transistors - Pol=NPN / Pkg=TO18 / Vceo=40 / Ic=0.2 / Hfe=40-120 / fT(Hz)=500M / Pwr(W)=0.36 Original PDF
    2N2369A On Semiconductor General Purpose Bipolar Transistor, NPN, 15V, TO-18, 3-Pin - Pol=NPN / Pkg=TO18 / Vceo=40 / Ic=0.2 / Hfe=40-120 / fT(Hz)=500M / Pwr(W)=0.36 Original PDF
    2N2369A Philips Semiconductors TRANS GP BJT NPN 15V 0.2A 3TO-18 - Pol=NPN / Pkg=TO18 / Vceo=40 / Ic=0.2 / Hfe=40-120 / fT(Hz)=500M / Pwr(W)=0.36 Original PDF
    2N2369A Philips Semiconductors Small-signal Transistors Original PDF
    2N2369A Philips Semiconductors Silicon Planar Epitaxial Transistor Original PDF
    2N2369A Semelab High Speed, Medium Power, NPN Switching Transistor in a Hermetically Sealed TO-18 Package for High Reliability Applications - Pol=NPN / Pkg=TO18 / Vceo=40 / Ic=0.2 / Hfe=40-120 / fT(Hz)=500M / Pwr(W)=0.36 Original PDF
    2N2369A Semico Chip Type 2C2369A Geometry 0005 Polarity NPN - Pol=NPN / Pkg=TO18 / Vceo=40 / Ic=0.2 / Hfe=40-120 / fT(Hz)=500M / Pwr(W)=0.36 Original PDF
    2N2369A STMicroelectronics HIGH-SPEED SATURATED SWITCH - Pol=NPN / Pkg=TO18 / Vceo=40 / Ic=0.2 / Hfe=40-120 / fT(Hz)=500M / Pwr(W)=0.36 Original PDF
    2N2369A Various Russian Datasheets Transistor Original PDF
    2N2369A Bharat Electronics Transistor Selection Guide Scan PDF
    2N2369A Central Semiconductor NPN METAL-CAN SATURATED SWITCH / LOW NOISE LEVEL AMPLIFIER Scan PDF
    2N2369A Continental Device India Semiconductor Device Data Book 1996 Scan PDF
    2N2369A Crimson Semiconductor Transistor Selection Guide Scan PDF
    2N2369A Fairchild Semiconductor NPN high speed saturated switch. - Pol=NPN / Pkg=TO18 / Vceo=40 / Ic=0.2 / Hfe=40-120 / fT(Hz)=500M / Pwr(W)=0.36 Scan PDF
    2N2369A Fairchild Semiconductor Misc. Data Book Scans 1975/76 Scan PDF
    2N2369A Fairchild Semiconductor Full Line Condensed Catalogue 1977 Scan PDF

    2N 2369 A Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2N 2222 A NPN, TO-18

    Abstract: 2N2222 2n h 2222a 2222a NPN 706a 709a 2N708 2N709 2N753 2222 NPN
    Text: à a.UJ >° 0Hi >U aLU £ oc 2N 706 2N 706A 2N708 2N709 2N 709A 2N 722 2N 743 2N 744 2N753 2N 834 2N 834A 2N 869A 2N 914 2N 995 2N 2205 2N 2218 2N 2218A 2N 2219 2N 2219A 2N 2221 2N 2221A 2N 2222 2N 2222A 2N 2368 2N 2369 2N 2369A 2N 2475 2N 2894 2N 2904 2N 2904A


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    2N708 2N709 2N753 2N 2222 A NPN, TO-18 2N2222 2n h 2222a 2222a NPN 706a 709a 2222 NPN PDF

    TT 2222 npn

    Abstract: 709a 2N709 2n h 2222a 2N698 2N708 2N753 2222 NPN
    Text: à Si a. UJ >° 0Hi >U aLU £ oc 2N 706 2N 706A 2N708 2N709 2N 709A 2N 722 2N 743 2N 744 2N753 2N 834 2N 834A 2N 869A 2N 914 2N 995 2N 2205 2N 2218 2N 2218A 2N 2219 2N 2219A 2N 2221 2N 2221A 2N 2222 2N 2222A 2N 2368 2N 2369 2N 2369A 2N 2475 2N 2894 2N 2904


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    2N708 2N709 2N753 000000000000a l000000 T0-18 TT 2222 npn 709a 2n h 2222a 2N698 2222 NPN PDF

    2222 NPN

    Abstract: 2222a NPN 2n h 2222a 2222a 2221A npn 2907A 2N708 2N709 2N753 2369A
    Text: JEDEC TRANSISTORS 2N 706 2N 706A 2N708 2N709 2N 709A 2N 722 2N 743 2N 744 2N753 2N 834 2N 834A 2N 869A 2N 914 2N 995 2N 2205 2N 2218 2N 2218A 2N 2219 2N 2219A 2N 2221 2N 2221A 2N 2222 2N 2222A 2N 2368 2N 2369 2N 2369A 2N 2475 2N 2894 2N 2904 2N 2904A 2N 2905


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    2N708 2N709 2N753 NPN50 2222 NPN 2222a NPN 2n h 2222a 2222a 2221A npn 2907A 2369A PDF

    J 2N2369

    Abstract: 2N2369
    Text: 2369 HIGH-FREQUENCY SATURATED SWITCH The 2N 2369 is a silicon planar epitaxial NPN transistor in Jedec T O -1 8 metal case. It is designed specifically fo r high-speed saturated switching applications at current levels from 100 juA to 100 mA. ABSOLUTE MAXIMUM RATINGS


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    2N2369 J 2N2369 PDF

    N2369

    Abstract: 2N4260 2N2368 2N3546 2N2369A 2N3227 2N4261 2N706 2N708 2N869A
    Text: TO-18 T R A N S IS T O R S F A S T S P E E D SW IT C H NPN Device Type 2N706 2N708 2N914 2N2368 2N 2369 2 N 2369A 2N3227 BSX90 2N4260 2N4261 lc max. mA Polarity v C EO , VcER<+> (Volts) NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN 20 (+ ) 15 15 15 15 15 20 12


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    2N706 2N708 2N914 N2368 N2369 2N2369A 2N3227 BSX90 2N4260 2N4261 2N2368 2N3546 2N869A PDF

    2369 transistor

    Abstract: 2369
    Text: 2N 2369 SILICON PLANAR NPN HIG H-FREQUENCY SATURATED SWITCH Th e 2 N 2 3 6 9 is a sil con p lanar ep ita x ia l N P N tran sistor in Jedec T O - 1 8 m etal case. It is designed sp ecifically to r high-speed saturated sw itch ing ap p lic atio n s a t c u rre n t levels fro m


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    10/iA 300/xs, 2369 transistor 2369 PDF

    2n2369

    Abstract: 2N2368 2369 2n 2368 2n 2369 2368
    Text: * 2 N 2368 * 2 N 2369 NPN S IL IC O N T R A N S IS T O R S , E P IT A X IA L T R A N S IS T O R S N P N S IL IC IU M , E P IT A X IA U X îfc Preferred device D ispositif recommandé - H F small signal amplification Amplification H F petits signaux Low current fast switching


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    PDF

    2369

    Abstract: T018 T072 PN2368 NKT13329 13429 16229
    Text: NPN Silicon Transistors N P N S ilic o n Planar T ransistors fo r high speed sw itching and high fre q u e n cy use Type M a x im u m ratings Case BSY 95A T018 T018 T018 T018 N K T 13329 N K T 13429 N K T 16229 PN 918 PN 2368 PN 2369 T018 T018 T072 Plastic T 0 1 8


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    /10mA) 10mA/1mA) 2369 T018 T072 PN2368 NKT13329 13429 16229 PDF

    bc 301 transistor

    Abstract: bc 303 transistor A2N transistor BC 170c transistor TRANSISTOR BC 650 c transistor BSX 82 BC211 transistor TRANSISTOR BC 313 BC211 transistor BC 56
    Text: general purpose and fast switching transistor selector guide guide de sélection transistors usage général et commutation rapide ^ THOMSON-CSF 3 a r METAL-CASE/BOITIER METAL Case TO 39 Polarity PIMP NPN ic PNP NPN 0,6.0,8 A < 0 ,2 A v C E O ^ \^ PNP PNP


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    BSX52 BSW21 BSW22 BSX51 BSW22 2N706 bc 301 transistor bc 303 transistor A2N transistor BC 170c transistor TRANSISTOR BC 650 c transistor BSX 82 BC211 transistor TRANSISTOR BC 313 BC211 transistor BC 56 PDF

    2907A EQUIVALENT

    Abstract: 2222A 2907 transistor 4393 s0918 BFQ22 equivalent a 2907 SOR2369 S02907 bfr93
    Text: m icropackaged transistors according to CNET specifications transistors en microboitier selon spécification CN ET Réf. C N E T Standard catalog product Produit catalogue standard TCH 918.3 TCH 918.5 SO R 918 S0 9 1 8 2N918 2N 918 TCH 2222.3 TCH 2222.5 S O R 2222


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    2N918 S0918 S02222 S02369 S02907 SOR2907A S02907" S02894 2907A EQUIVALENT 2222A 2907 transistor 4393 BFQ22 equivalent a 2907 SOR2369 bfr93 PDF

    2N2369

    Abstract: 2N2369A 2369 transistor 2369A 2N 2369 A
    Text: 2 W 2369 A NPN S ILIC O N T R A N S IS T O R , E P IT A X IA L TR A N S IS T O R NPN S IL IC IU M , E P IT A X IA L - H F small signal amplification A m plification H F petits signaux - Low current fast switching Commutation rapide faible courant v CEO 15


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    2N2369A 2N2369 2N2369A 2369 transistor 2369A 2N 2369 A PDF

    TRANSISTOR BC 313

    Abstract: npn 2222 transistor transistor 2n 2222 2907 TRANSISTOR PNP NPN 2904 BSW21 2n 2222 transistor bc 107 transistor BCY 107 2907 pnp transistor
    Text: general purpose and fast switching transistor selector guide guide de sélection transistors usage général et commutation rapide ^ THOMSON-CSF 3 a r M ETAL-CASE/ BOITIER METAL Case TO 39 Polarity PIMP NPN ic PNP NPN 0,6.0,8 A <0,2 A vC EO ^ \^ PNP PNP


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    BSX52 BSW21 BSW22 BSX51 BSW22 290AL-CASE/BOITIER TRANSISTOR BC 313 npn 2222 transistor transistor 2n 2222 2907 TRANSISTOR PNP NPN 2904 2n 2222 transistor bc 107 transistor BCY 107 2907 pnp transistor PDF

    BC-337 B 011

    Abstract: BC 195 TRANSISTORS transistors BC 23 SO2221R BC-338 B 011 SO2484R BC 930 222-1 2221 bc 107 silicon equivalent
    Text: A C T IV E COMPONENTS FOR H Y B R ID CIRCU ITS COMPOSANTS A CTIFS POUR CIRCUITS HYBRIDES ê CB-166 SOT-23 Silicon NPN transistors, switching and general purpose Marl ing Mart,tuage Type Type N R . Pin conf. Brochage Transistors NPN silicium, usage générai et commutation


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    CB-166 ISOT-23) BCW31 BCW32 BCW33 BCW71 BCW72 BCX20 BSV52 BC-337 B 011 BC 195 TRANSISTORS transistors BC 23 SO2221R BC-338 B 011 SO2484R BC 930 222-1 2221 bc 107 silicon equivalent PDF

    TRANSISTOR BC 313

    Abstract: 2n 3019 transistor 2N 2905a pnp transistor transistor 2N 3020 BSW21 2N 2222 2221-2N 2N2243 BC211 2N2195
    Text: general purpose and fast switching transistor selector guide guide de sélection transistors usage général et commutation rapide 3 a r ^ THOMSON-CSF METAL-CASE/BOITIER METAL Case TO 39 Polarity PIMP NPN ic 12 V PNP NPN 0,6.0,8 A < 0 ,2 A vC E O ^ \^ IS V


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    BSX52 BSW21 BSW22 BSX51 BSW22 TRANSISTOR BC 313 2n 3019 transistor 2N 2905a pnp transistor transistor 2N 3020 2N 2222 2221-2N 2N2243 BC211 2N2195 PDF

    bc 107 transistor

    Abstract: transistor Bc 540 BC 540 TRANSISTOR 2221-2N 2N 2222 BSX24 BC190 BC 390 Transistor 2907 TRANSISTOR PNP BSV16
    Text: general purpose and fast switching transistor selector guide guide de sélection transistors usage général et commutation rapide 3 a r ^ THOMSON-CSF M ETAL-CASE/ BOITIER M E T A L Case TO 39 Polarity PIMP NPN ic PNP NPN 0,6.0,8 A <0,2 A vC E O ^ \^ PNP


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    BSX52 BSW21 BSW22 BSX51 BSW22 BSX52 bc 107 transistor transistor Bc 540 BC 540 TRANSISTOR 2221-2N 2N 2222 BSX24 BC190 BC 390 Transistor 2907 TRANSISTOR PNP BSV16 PDF

    ph 4148

    Abstract: f494 ph+4148+zener+diode PXTA14 BC546 SMD SMD BC547 BC327/BC517 BC327-40 SMD BST74 BFG 71
    Text: Philips Semiconductors Surface Mounted Semiconductors Conversion List CONVERSION LIST FROM LEADED TO SMD TYPE LEADED SMD LEADED SMD B A 2 43 BA T18 BA W 62 BAW 56 B A 3 14 B A S 17 BA W 62 BAW 56W B A 4 80 BA T17 B A X 12 BAS29 BA481 BA T17 B A X 12 BA S31


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    BAS29 BA481 BBY31 BAT81 BAS81 BBY40 BC847 BAT54 BC847A BT2907 ph 4148 f494 ph+4148+zener+diode PXTA14 BC546 SMD SMD BC547 BC327/BC517 BC327-40 SMD BST74 BFG 71 PDF

    BC211

    Abstract: BC 650 NPN BSV16 2N706 BFY50 BFY51 BFY52 BSX45 BSX46 BSY51
    Text: general purpose, amplification, switching - metal case commutation, am plification, usage général boîtier métal Type NPN M axim um ratings PNP p to t C haracteristics a t 25°C VcEO / •»21E VCE satl / / «e / 50 50 50 50 25 25 30 30 850 850 650 650


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    BC211 2N706 BC211 BC 650 NPN BSV16 BFY50 BFY51 BFY52 BSX45 BSX46 BSY51 PDF

    Untitled

    Abstract: No abstract text available
    Text: ACTIVE COM PONENTS FO R HYBRID CIRC U ITS COMPOSANTS A CTIFS POUR CIRCUITS HYBRIDES Silicon IMPN tran sisto rs, low noise chip Transistors NPN silicium, faible bruit (pastille) Type Typ.9 VCBO (V) VCEO (V) h21E 'c ' (mA) *C V CE (V) (mA) F (dB) min - max


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    PDF

    BSX39

    Abstract: BSX29 BSX26 IC 4013 transistor BSX26 2n3013 BSX28 bsx20 bsx39
    Text: nrz SGS-THOMSON GENERAL PURPOSE & INDUSTRIAL Ä 7 # K ÄÖ 8 IILI O T® !M 0(gS SMALL SIGNAL TRANSISTORS NPN TRANSISTORS FOR FAST AND ULTRA FAST SWITCHING vCEO hpE min/max C? Type (mA (V) vCE(sat) max ICrtB (V) (mA) »T min (MHz) 0.25 0.4 30/3 0.7 0.6 10/1


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    bsx28 bsx20 2369a bsx26 2n3014 bsx39 2n4013 BSX29 IC 4013 transistor BSX26 2n3013 bsx20 bsx39 PDF

    IC 4047

    Abstract: N2219 ic 4046 bsw830 BSW82 N 2222 N2222A BSW83 2N3301 2N3302
    Text: NPN Silicon Transistors NPN Silicon Epitaxial Planar Transistors lc = 5C 0mA) in TO-18 and TO-39 (~ T O - 5 ) metal cases for high speed switching Type Characteristics @ Tam b= 25°C Maximum Ratings f" l„ Tam b— ff 2 5 °C Tease— V CE = 10 V = 10 mA


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    BSW83 2N3301 2N3302 IC 4047 N2219 ic 4046 bsw830 BSW82 N 2222 N2222A 2N3301 2N3302 PDF

    2N2475

    Abstract: BFS36 BFS38 BFS46 BFS41 2N2605 2N930 BFS36A BFS42 BFS38A
    Text: M ICRO-E CHARACTERISTICS AT 25°C p-n - -P n -p - n l\/l C I'M1U 1IPIV V/1I CURRENT GENERAL PURPOSE IVI tU TRANSISTORS Parameter BFS38A M in. Test Conditions M in. 25 - - 35 v CBO Rated Max. - VCEO sus l c = 5mA, Iß —0 25 v EBCi Rated Max. - 5 >CBO V c b = V c b O f*atec* ^ ax' ^E= 0


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    BFS38A BFS38 BFS39 BFS40A BFS40 BFS41 BFS36 2N930 BFS37 2N2605 2N2475 BFS38 BFS46 BFS41 2N2605 BFS36A BFS42 BFS38A PDF

    boitier to 126

    Abstract: l14oc BF 914 2n 693 2N706 ESM 470
    Text: Silicon PNP transistors, video high voltage Tamb = 25 0C Transistors PNP silicium , haute tension vidéo v CËO <V Case V C E sa t V ) fT (MHz/ T S i 76 min Page max <c / I b (m A ) - 10 - 0 ,5 50/5 100 # - 10 - 0 ,5 50/5 100 # 30 - 25 - 0 ,5 -5 /1 70 §


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    ESM753 l14oc boitier to 126 l14oc BF 914 2n 693 2N706 ESM 470 PDF

    BEL 100N TRANSISTOR

    Abstract: BEL100N bel 100n transistor npn BEL 100N 2n 2222a transistor BEL100 TRANSISTOR bd 657 BF200 transistor transistor BF 245 bd115
    Text: BHARAT EL EK /S E n i C O N D S Device No VC EO Volts min VcBO Volts mm DI 47E D V ebo VoHs min hFE at bias mm /max Ic mA 14353Tfl V ce V o lts 1 CM mA max P lo t mW max □□□□012 ICBO uA typ flTG • V ce Sat V o lts typ ÍT MHz typ BELI Cob pF typ


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    143S3Tfl 2N2218 285max 2N2219A 2N3501TV 20min. 22min. 2N918 2N929 BEL 100N TRANSISTOR BEL100N bel 100n transistor npn BEL 100N 2n 2222a transistor BEL100 TRANSISTOR bd 657 BF200 transistor transistor BF 245 bd115 PDF

    Untitled

    Abstract: No abstract text available
    Text: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL PNP TRANSISTOR TO-116 PACKAGE T O -116 14 PIN C E R A M IC D IP yp i* T O -116 w 11 f VcEO sus VOLTS Ic (m ax) AM PS hfE @ V ^ ce m in/m ax @ m A /V VcE(sat) @ Ic^B V @ m A /inA C <£P P (M H z) 2N 6987 60 .6 100/300@ 150/10


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    O-116 500/l PDF