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    2N 5088 TRANSISTOR Search Results

    2N 5088 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    2N 5088 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2N5088

    Abstract: marking 2n sot23
    Text: 2N5088/89 / MMBT5088/89 NPN SMALL SIGNAL TRANSISTOR Features • · · · MMBT5088 / MMBT5089 Low Noise High Gain Epitaxial Planar Die Construction Available in both Through-Hole and Surface Mount Packages General Purpose, Low Noise Amplifier SOT-23 A C TOP VIEW


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    2N5088/89 MMBT5088/89 MMBT5088 MMBT5089 OT-23 O-92/SOT-23, MIL-STD-202, MMBT5089 2N5088 marking 2n sot23 PDF

    2n 5088 transistor

    Abstract: SOT-23 CEB
    Text: 2N5088/89 / MMBT5088/89 NPN SMALL SIGNAL TRANSISTOR POWER SEMICONDUCTOR Features • • • • MMBT5088 / MMBT5089 Low Noise High Gain Epitaxial Planar Die Construction Available in both Through-Hole and Surface Mount Packages General Purpose, Low Noise Amplifier


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    2N5088/89 MMBT5088/89 MMBT5088 MMBT5089 OT-23 O-92/SOT-23, MIL-STD-202, MMBT5089 2n 5088 transistor SOT-23 CEB PDF

    2N5088 Cross Reference

    Abstract: 2N5088 power 50-kV 2N5089 fairchild 2n5088 application note 2N5088 Fairchild
    Text: 2N5088 / MMBT5088 / 2N5089 / MMBT5089 2N5088 2N5089 MMBT5088 MMBT5089 C E C B TO-92 SOT-23 E B Mark: 1Q / 1R NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1µA to 50 mA.


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    2N5088 MMBT5088 2N5089 MMBT5089 2N5089 OT-23 2N5088 Cross Reference 2N5088 power 50-kV 2N5089 fairchild 2n5088 application note 2N5088 Fairchild PDF

    2N508

    Abstract: 2N5088 2N5088 MOTOrola 2N5089 2N5089 MOTOROLA
    Text: MOTOROLA Order this document by 2N5088/D SEMICONDUCTOR TECHNICAL DATA A m plifier Transistors 2N 5088 2N 5089 NPN Silicon COLLECTOR 3 EMITTER MAXIMUM RATINGS Rating C o lle c to r-E m itte r Voltage Symbol 2N508 8 2N508 9 Unit VCEO 30 25 Vdc C o lle c to r-B a s e Voltage


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    2N5088/D 2N508 N5088 N5089 O-226AA) 2N5088 2N5088 MOTOrola 2N5089 2N5089 MOTOROLA PDF

    2n508

    Abstract: 2n5088
    Text: MOTOROLA Order this document by 2N5088/D SEMICONDUCTOR TECHNICAL DATA A m plifier Transistors 2N 5088 2N 5089 NPN Silicon COLLECTOR 3 EMITTER MAXIMUM RATINGS Rating C o lle c to r-E m itte r Voltage Symbol 2N508 8 2N508 9 Unit VCEO 30 25 Vdc C o lle c to r-B a s e Voltage


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    2N5088/D 2N508 O-226AA) 2n5088 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N 5088/5089 NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR • Collector-Emitter Voltage: = 2N5088: 3 0 V 2N5089: 25V • Collector Dissipation: Pc max =625mW V c eo ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Symbol Characteristic Collector-Base Voltage


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    2N5088: 2N5089: 625mW 300ns, b4142 005SD33 2N5088/5089 PDF

    2N5088

    Abstract: 2N5089 100khz 5v transistor npn 2n5088 transistor TRANSISTOR D 471 transistor amplifier 5v to 15v transistor CR NPN 2N5089 transistor
    Text: 2N 5088/5089 NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR • Collector-Emitter Voltage: = 2NS088: 30V 2N5089: 25V • Collector Dissipation: Pc m ax =625m W V ceo ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Rating Unit 30 30 25 4 .5 50 625 150 —55^-* 1 5 0


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    2N5088/5089 2N5088: 2N5089: 625mW 2N5088 2N5089 100hA, 2N5088 2N5089 100khz 5v transistor npn 2n5088 transistor TRANSISTOR D 471 transistor amplifier 5v to 15v transistor CR NPN 2N5089 transistor PDF

    2NS089

    Abstract: 2n 5088 transistor 2N5088 STC 5089
    Text: 2N5088/5089 NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR • Collector-Emitter Voltage: TO-92 = 2N5088: 30V 2NS089: 25V • Collector Dissipation: Pc max =625mW V c eo ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Rating Unit 30 30 25 4.5 50 62 5 150 -5 5 ^ 1 5 0


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    2N5088/5089 2N5088: 2NS089: 625mW 500mA 20MHz 2NS089 2n 5088 transistor 2N5088 STC 5089 PDF

    2N5081

    Abstract: transistor 2N5086 2N5086 2n508 2n5088 transistor 2N5087 2N5088 2N5089
    Text: 2N5086 2N5088 2N5087 2N5089 PNP , NPN SILICON AF LOW NOISE SMALL SIGNAL TRANSISTORS I CASE TO-92A THE 2N5086, 2N5087 PNP AND 2N5088; 2N5089 (NPN) ARE SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AF LOW NOISE PREAMPLIFIER CIRCUITS. IBC (PNP) ABSOLUTE MAXIMUM RATINGS


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    2N5086 2N5087 2N5088 2N5089 2N5086, 2N5088; T0-92A 2N5086 2N5081 transistor 2N5086 2n508 2n5088 transistor 2N5087 2N5089 PDF

    2N5088

    Abstract: 2N5088 MOTOrola
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Am plifier Tran sistors NPN Silicon BASE EMITTER M A X IM U M R A T IN G S Rating C o llector-E m itter Voltage Symbol 2N5088 2N5089 Unit VCEO 30 25 Vdc 35 30 vdc C o llecto r-B ase Vottage VC B O E m itte r-B a s e Voltage


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    2N5088 2N5089 2N5088 2N5088 MOTOrola PDF

    2n5088 transistor

    Abstract: SL 100 NPN Transistor 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PA CK A GE D evice b v CEO T y p e @ 1 0 m A - V M in . V CE (sat) E M a x. 2N 3903 2N 3904 2N 3905 2N 3906 2N 4123 NPN NPN PNP PNP NPN 40 40 40 40 30 50 100 50 100 50 15 0 300 150 300 15 0


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    2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4400 2n5088 transistor SL 100 NPN Transistor PDF

    5089

    Abstract: N5088 2n 5088 transistor c 5088 DS21 603 marking 2N5088 2N5089 MMBT5088 MMBT5089
    Text: 2N5088/5089 / MMBT5088/5089 VISHAY NPN SMALL SIGNAL TRANSISTORS /Li T E M I ri / POWERSEMICONDUCTOR I Features MMBT5088 / MMBT5089 Low Noise High Gain Epitaxial Planar Die Construction Available in both Through-Hole and Surface Mount Packages General Purpose, Low Noise Amplifier


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    2N5088/5089 MMBT5088/5089 MMBT5088 MMBT5089 O-92/SOT-23, MIL-STD-202, OT-23 MMBT5089 5089 N5088 2n 5088 transistor c 5088 DS21 603 marking 2N5088 2N5089 PDF

    2n 5088 transistor

    Abstract: NPN transistor 500ma TO-92 2n5088 transistor MMBT5088 transistor TO-92 mil-std c 5088 2N5088 2N5089 MMBT5089 432 sot23
    Text: 2 N5088/89 / MMBT5088/89 NPN SMALL SIGNAL TRANSISTOR Features MMBT5088 / MMBT5089 Low Noise High Gain Epitaxial Planar Die Construction Available in both Through-Hole and Surface Mount Packages General Purpose, Low Noise Amplifier SOT-23 -H.h-A TOF* VIEW • &


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    N5088/89 MMBT5088/89 MMBT5088 MMBT5089 O-92/SOT-23, MIL-STD-202, OT-23 MMBT5089 2n 5088 transistor NPN transistor 500ma TO-92 2n5088 transistor transistor TO-92 mil-std c 5088 2N5088 2N5089 432 sot23 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N5088/5089 / MMBT5088/5089 VISHAY NPN SMALL SIGNAL TRANSISTORS / u T E M ir I POWER SEMICONDUCTOR J Features MMBT5088 / MMBT5089 Low Noise High Gain Epitaxial Planar Die Construction Available in both Through-Hole and Surface Mount Packages General Purpose, Low Noise Amplitier


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    2N5088/5089 MMBT5088/5089 MMBT5088 MMBT5089 OT-23 O-92/SOT-23, MIL-STD-202, MMBT5089 PDF

    mpsa18

    Abstract: 2N5088
    Text: 2N5088 2N5089 MAXIMUM RATINGS Rating Symbol 2N5088 2N5089 Unit C o lle c to r -E m itte r V o lta g e v CEO 30 25 Vdc C o lle c to r-B a s e V o lta g e v CBO 35 30 V dc 3.0 Vdc C o lle c to r C u rre n t — C o n tin u o u s •Emitter-Base V o lta g e >C


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    2N5088 2N5089 2N5088 O-226AA) mpsa18 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N6428/6428A NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR TO -92 • C ollector-E m itter Voltage: V C e o = 50V • C ollecto r D issipation: Pc m ax =625m W ABSOLUTE MAXIMUM RATINGS (TA=25°C) C haracteristic Sym bol C ollector-B ase Voltage C ollector-E m itter Voltage


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    2N6428/6428A z-10K 2N6428 2N6428A 100Hz PDF

    6428A

    Abstract: 2N6428 2n5088 transistor 2N5088 2N6428A N6428
    Text: 2N6428/6428A NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR TO -92 • C ollector-E m itter Voltage: V Ceo= 50V • C ollector Dissipation: P c m a x = 62 5 m W ABSOLUTE MAXIMUM RATINGS (Ta=25°C) C haracteristic Sym bol C ollector-Base Voltage C ollector-E m itter Voltage


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    2N6428/6428A 625mW 2N5088 100nA, 100HA 100mA, N6428 N6428A 100HA 100Hz 6428A 2N6428 2n5088 transistor 2N6428A N6428 PDF

    2n5088 transistor

    Abstract: 2N5088 2N6428A
    Text: SAMSUNG S EM I CON DU C T CR INC 2N6428A J*4E D | 7^4142 □ 0 D 7 1 £i 3 fc, | NPN EPITAXIAL SILICON TRANSISTOR T-29-21 AMPLIFIER TRANSISTOR • Collector-Em itter Voltage: V c e o = 5 0 V • Collector D issipation: P c m ax =625m W ABSO LUTE MAXIMUM RATINGS (Ta=25°C)


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    1b4l42 G0071T3 2N6428A 625mW 2N5088 T-29-21 100/iA, 100mA, 100MHz 2n5088 transistor PDF

    2n 2222A 3904

    Abstract: No abstract text available
    Text: DGG7423 ^ 2 •RHU TO-92 JEDEC Standards Numbers • N P N Transistors General purpose small signal amplifiers B V Ebo Min. ICBO Vbe (sat) Max. Cob Max. fr Min. @ Ic 10pF 160MHz Typ. B V qbo Min. BV ceo Min. 2N 2925 TO-92 (ECB) 25V 25V 5V 100nA 25V 235 470


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    DGG7423 160MHz 100nA 2N3711 MPS3711 90MHz MPS-A65 100nA 2n 2222A 3904 PDF

    Untitled

    Abstract: No abstract text available
    Text: KSP8097 NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR • C ollector-E m itter Voltage: V Ceo = 2 5 V • C ollector D issipation: Pc m ax =625m W ABSOLUTE MAXIMUM RATINGS (TA=25°C) C haracteristic Col lector-Base Voltage C ollector-E m itter Voltage


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    KSP8097 PDF

    2N6428A

    Abstract: No abstract text available
    Text: 2 N6428/6428A NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR T O -92 • C ollector-E m itter Voltage: VCeo= 50V • C ollector D issipation: Pc m ax =625m W ABSOLUTE MAXIMUM RATINGS (TA=25°C) C haracteristic Sym bol Col lector-Base Voltage C ollector-E m itter Voltage


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    N6428/6428A 2N6428A PDF

    2sc 9015

    Abstract: 2SC644 CS9015 2N4248 scr 4059 transistor MPS 6518 mpsa09 2SC923 2N3550 2SC644 transistor
    Text: 7 -. SEMICONDUCTORS INC OIE I | SlBktSO 0000275 1 | ¿Lf-/? TYPE NO. ; POLARITY 1 Audio Frequency Small Signal Transistors MAXIMUM RATINGS CASE HFE Pd mW) >C (mA) VCEO (V) min max •c (mA) VCE (V) VCE(SAT) max ■c (V) (mA) fT min (MHz) Cob max (pF) 5+


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    BCW86 O-92F BCY56 BCY57 BCY58 BCY59 2sc 9015 2SC644 CS9015 2N4248 scr 4059 transistor MPS 6518 mpsa09 2SC923 2N3550 2SC644 transistor PDF

    BCM 4359

    Abstract: transistor 4287 AB transistor 3901
    Text: 6091788 MICRO ELECTRONICS CORJP_ ña 82D 006^8 DEI bCm 7flfl D 7^* D 0 0 Gb 4 fl □ "7 J " TYPE V C E SA T FE C ASE Pd (mW) 'c (mA) V CEO (V) min max 'c (mA) max (V) ‘c (mA) fT min (MHz) Cob N.F. max max (pF) (dB) 3694 4249 4250 5138 N P P P T O -92A


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    O-237 MELF-002, MELF006 L0T17aa O-181LOW BCM 4359 transistor 4287 AB transistor 3901 PDF

    2sc 9015

    Abstract: 2SC644 CS9015 9014n BC 945 transistor BC 945 2N4248 BC267 2SC828 2sc828a
    Text: BC BC BC BC BC 132 153 154 167 168 107 108 109 113 114 Z Z Z Z Z Z Z -0 -0 z Z Z Z Z Z TO-106 TO-92F TO-92B TO-92F TO-92B 901-01 90101 901-01 901-01 901-01 TO-92F TO-92B TO-92F TO-92B TO-18 TO-18 TO-18 TO-18 TO-92F TO-92B 3 3 3 3 â <b <b <b cb b M IO M tO K


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    BC107 O-106 O-92B -26UNF-2A O-48D 2sc 9015 2SC644 CS9015 9014n BC 945 transistor BC 945 2N4248 BC267 2SC828 2sc828a PDF