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    2N 5109 Search Results

    2N 5109 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    57202-F51-09ALF Amphenol Communications Solutions Minitek®, Board/Wire to Board Connectors, Unshrouded Headers - Surface Mount - Double row - 18 Positions - 2mm (0.079inch) - Vertical Visit Amphenol Communications Solutions
    76745-109-24LF Amphenol Communications Solutions BergStik®, Board to Board connector, Unshrouded vertical stacked header, Through Hole, Double Row, 24 Positions, 2.54mm (0.100in) Pitch. Visit Amphenol Communications Solutions
    74355-1093 Amphenol Communications Solutions Latch-N-Lok Header Assembly, Right Angle, Through Hole, Pebble Gray, 8 Positions, Double Row, 2.54mm (0.100in) Pitch. Visit Amphenol Communications Solutions
    10151094-1310013LF Amphenol Communications Solutions DDR4 Memory Module Sockets,Vertical, Surface Mount, 288 Position, 0.85mm (0.0335in) pitch, 30u\\ Gold on Contact Area, Standard Housing and Latch, Metal tab, Without MYLAR Visit Amphenol Communications Solutions
    10151094-1322B13LF Amphenol Communications Solutions DDR4 Memory Module Sockets,Vertical, Surface Mount, 288 Position, 0.85mm (0.0335in) pitch, 30u\\ Gold on Contact Area, Standard Housing and Latch, Metal tab, With cap Visit Amphenol Communications Solutions
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    2N 5109 Price and Stock

    Microchip Technology Inc 2N5109

    RF TRANS NPN 20V 1.2GHZ TO39
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    DigiKey 2N5109 Bulk 1,000
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    Avnet Americas 2N5109 Bag 1,000
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    Central Semiconductor Corp 2N5109UB-BK

    RF TRANS NPN 20V 1.2GHZ TO39
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    Microchip Technology Inc JANTX2N5109

    TRANS NPN TO39
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    Central Semiconductor Corp 2N5109-PBFREE

    RF TRANS NPN 20V 1.2GHZ TO39
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    DigiKey 2N5109-PBFREE Bulk 500
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    Central Semiconductor Corp CP229-2N5109-CM

    RF TRANSISTOR TO-39
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    Find more 2N 5109 price and stock on Findchips.com

    2N 5109 Datasheets (57)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N5109 Advanced Power Technology RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Original PDF
    2N5109 Advanced Semiconductor NPN SILICON HIGH FREQUENCY TRANSISTOR Original PDF
    2N5109 Central Semiconductor Small Signal Transistors Original PDF
    2N5109 Central Semiconductor RF Transistors (BJT), Discrete Semiconductor Products, TRANS RF NPN 20V 400MA TO-39 Original PDF
    2N5109 Microsemi RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Original PDF
    2N5109 Semico NPN transistor Original PDF
    2N5109 Semico Chip: geometry 1007 polarity NPN Original PDF
    2N5109 SunLED USA silicon transistors UHF/VHF power transistors Original PDF
    2N5109 Advanced Semiconductor Silicon Transistor Selection Guide Scan PDF
    2N5109 Bharat Electronics UHF / VHF RF Transistors Scan PDF
    2N5109 Diode Transistor NPN Small Signal Transistors Scan PDF
    2N5109 Diode Transistor SMALL SIGNAL TRANSISTORS Scan PDF
    2N5109 General Transistor Transistors for RF Applications Scan PDF
    2N5109 Motorola The European Selection Data Book 1976 Scan PDF
    2N5109 Motorola European Master Selection Guide 1986 Scan PDF
    2N5109 Motorola Power Transistor Selection Guide Scan PDF
    2N5109 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N5109 Unknown Shortform Electronic Component Datasheets Short Form PDF
    2N5109 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N5109 Unknown Vintage Transistor Datasheets Scan PDF

    2N 5109 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TO-129

    Abstract: 2N4933 TO128 PACKAGE 2N5687 TO-128
    Text: Typ type f MHz Vcc P¡n Pout 2N 3137 T 2N 3309 2N 3375 250 50 250 400 20 50 25 28 0,1 2 0,4 1 0,4 15 2 3 2N 2N 2N 2N 3553 3632 3733 3866 175 175 400 400 28 28 28 28 0,25 3,5 4,0 0,1 2N 2N 2N 2N 3924 3926 3927 4040 175 175 175 400 13,6 13,6 13,6 28 2N 2N 2N


    OCR Scan     		PDF O-117 O-129 O-128 O-131 TO-129 2N4933 TO128 PACKAGE 2N5687 TO-128

    KSD 166

    Abstract: LT 7202 diode Kertron LA 4301 transistor KSP 13 801 KDA 1.2 2N5085 LT 7207 KSP 13 801 0/transistor KSP 13 801
    Text: Hi-Rel PLANAR POW ER-2 AMP NPN • ii lll ii TYPE CASE REAKDOWNilllllliH if i VOLTAGES Veb ' VCE 2N 1252 TO-5 VCB 30 2N 1253 TO-5 30 20 2N 1506 60 40 2N 1506A TO-5 TO-5 2N 1714 TO-5 80 60 2N 1716 TO-5 80 90 90 2N 1718 MT-13 90 60 2N 1720 MT-13 90 2N 1889 TO-5


    OCR Scan     		PDF MT-13 KSD 166 LT 7202 diode Kertron LA 4301 transistor KSP 13 801 KDA 1.2 2N5085 LT 7207 KSP 13 801 0/transistor KSP 13 801

    pin configuration BFW 11

    Abstract: BF063 BFP96 2N3570 BFP90A bfq 85 BFP91 BFT50 BFX89 2N5109
    Text: 1. 1000 MHz C LA S S A LOW NOISE FOR SM ALL SIG N AL APPLICATIO NS Typ« I Pockog* ptot V B R C EO m ax. m in. (m W ) (V ) fr @ (M Hz) |m A ) C 22b* (pf) (V ) UM* (^B) (m A) > 15 6 g N TO-72 200 15 > 600 4 < 1,7* 10 2N 3570 2N 357) 2N 3572 N N N TO-72


    OCR Scan     		PDF BFX89 BFT50 CB-233 BFP91* CB-233 pin configuration BFW 11 BF063 BFP96 2N3570 BFP90A bfq 85 BFP91 2N5109

    transistor bf 184

    Abstract: pnp vhf transistor TO50 transistor transistor BF 509 BF 914 transistor BF 184 transistor transistor BF 451
    Text: m ils Uli S.A. TYPE NPN PNP BF BF BF BF BF BF BF BF BF BF BF BF BF BF BF BF BF 115 167 173 173S 180 181 184 185 198 199 200 214 215 240 241 254 255 BF BF BF BF BF 6 BF BF BF BF 272A 272B 316A 450 451 479 506 509 914 BFX 89 BFY 90 $ BFW 94 2N 918 2N 4957 2N 4958


    OCR Scan     		PDF 5109B O-92a transistor bf 184 pnp vhf transistor TO50 transistor transistor BF 509 BF 914 transistor BF 184 transistor transistor BF 451

    multi-emitter transistor

    Abstract: 2N 5109 2n5109
    Text: 2N 5109 NPN S IL IC O N T R A N S IS T O R , P L A N A R T R A N S IS T O R N P N S IL IC IU M , P L A N A R P R E L IM IN A R Y D A T A N O T IC E P R E L IM IN A IR E The 2N 5109 is an high frequency multiemitter transistor intended for use in wide­ band, large dynamic, linear amplifier.


    OCR Scan     		PDF 000pF 1000pF B5/100 multi-emitter transistor 2N 5109 2n5109

    Untitled

    Abstract: No abstract text available
    Text: ¿888888888 p |M iwiHBBffi sm sssBP e .rfHHHHHHHHMh. m 1 itittnnnnn hhhhhhk-. ><>niftBHhr Data Sheet No. 2N5109 o % #f 1 l $ 1 I cI ^88888 id L SEM ICO N D U CTO RS Type 2N5109 G e n e r ic P a rt N u m b e r : 2N 5109 G eom etry 1 0 0 7 Polarity NPN Qual Level: JAN - JA NTXV


    OCR Scan     		PDF 2N5109 MIL-PRF-19500/453

    2N918

    Abstract: 2N4033
    Text: continued >cc <—1 oa. w0 JJ aLU 1— <a: <3 X to -Ü E < E _o UJ _clL > CU E A3 UoJ > X U_a. X <o E no o0 (continued) o0 ID CM II @ 5 I - PACKAG E TYPE General purpose amplifiers and switches f T min (MHz) JEDEC TRANSISTORS E a.ü 2N 3251 PNP 40 100/300


    OCR Scan     		PDF T0-18 2N918 2N4033

    2N 2857

    Abstract: 2N918 2N3600 RF-IF
    Text: JEDEC TRANSISTORS continued c E h *— LiCS. X<a E o n o G "a X co e Uz uo m CM II«j h- @ PACKAGE Nl X 5 f (MHz) a. :> UJ u :> a UJ 1< cc f (MHz) > K cc < —i o PG min (dB) TYPE RF-IF amplifiers/oscillators S _§ Û Q. 2N 707 NPN 25 — 5 6 100 — —


    OCR Scan     		PDF 2N918 2N 2857 2N3600 RF-IF

    transistor amplifier 5v to 15v

    Abstract: 2n5109 2N 5109 MULTI-EMITTER SILICON PLANAR NPN CATV ULTRA-LIIMEAR HIGH GAIN TRANSISTOR multi-emitter transistor
    Text: 2N 5109 MULTI-EMITTER SILICON PLANAR NPN C A T V U L T R A -L IIM E A R H IG H G A IN T R A N S IS T O R Th e 2 N 5 1 0 9 is a m u lti-e m itte r silicon p lanar e p ita x ia l N P N tran sistor in Jedec T O - 3 9 m etal case. It is designed fo r C A T V - M A T V a m p lifie r ap p lic atio n s over a w id e freq u en cy range


    OCR Scan     		PDF

    uhf amplifier design BFR90

    Abstract: 2N3866 MOTOROLA 2n5160 MRF306 MRF531 2n5583 MOTOROLA 2N5179 MRF905 2n5179 BFR91
    Text: f Device Type ^ Pout Output Power Watts g PE Power Gain dB Min. Vcc Supply Voltage Volts Package 10 10 8.4 8.2 7.6 6.0 28 28 28 28 28 28 TO -39 TO-39 144B-04 145A-07 145A-07 211-10 A 28 28 28 28 28 28 28 28 28 28 28 28 28 28 28 207A-01 TO-39 305-01 305A-01


    OCR Scan     		PDF 2N3866 2N3553 2N5641 144B-04 45A-07 2N5643 2N6166 MRF509 07A-01 uhf amplifier design BFR90 2N3866 MOTOROLA 2n5160 MRF306 MRF531 2n5583 MOTOROLA 2N5179 MRF905 2n5179 BFR91

    BFR90 transistor

    Abstract: 2n5583 mrf502 transistor 2N5160 MRF531 transistor bfr96 BFR91 BFR91 transistor 2N3866 2N5032
    Text: f Device Type ^ Pout O u tp u t Power Watts g PE Power Gain dB M in. V cc S upply Voltage V o lts Package 10 10 8.4 8.2 7.6 6.0 28 28 28 28 28 28 TO -39 TO-39 144B-04 145A-07 145A-07 211-10 A 28 28 28 28 28 28 28 28 28 28 28 28 28 28 28 207A-01 TO-39 305-01


    OCR Scan     		PDF 2N3866 2N3553 2N5641 144B-04 45A-07 2N5643 2N6166 MRF509 07A-01 BFR90 transistor 2n5583 mrf502 transistor 2N5160 MRF531 transistor bfr96 BFR91 BFR91 transistor 2N5032

    MOTOROLA 2N5179

    Abstract: 2N5160 BFR96 MM4049 MRF531 BFR90 MOTOROLA MRF911 2N4957 2N5032 2N5583
    Text: Low-Noise The low-noise devices listed are produced w ith carefully controlled rj, and f j to optim ize device noise performance. Devices listed in the m atrix are classified according to noise figure perform ance versus frequency. dB 1.5 2.0 2.5 3.0 3.5


    OCR Scan     		PDF 2N5829 2N5031 MRF904 2N4957 2N5032 MOTOROLA 2N5179 2N5160 BFR96 MM4049 MRF531 BFR90 MOTOROLA MRF911 2N5583

    SDT 9202

    Abstract: bdx 338 BU 450 bdx
    Text: ALPHANUMERIC BC 107. .73 BC 108. .73 BC 109. .73 BC 170. .74 BC 171. .74 BC 172. .74 BC 173. .74 BC 174. .74 BC 177. .73 BC 178. .73 BC 179. .73 BC 190. .73 BC 237. .74 BC 238. .74 BC 239. .74 BC 250. .74


    OCR Scan     		PDF

    t 3866 power transistor

    Abstract: transistor 571 transistor 3866 s transistor d 5702 e d 5703 t 3866 transistor transistor 2N 5688 2N3553 transistor t 3866 3866 transistor 2n RF transistor
    Text: 2N3553 SILICON NPN VHF POWER TRANSISTOR 571 HIGH GAIN DRIVE R FOR 28 V FM APPLICATIONS • • 2.5 W a t 175 MHz Minimum Gain 10 dB mechanical data • • - 6 , 6 - » -12,7 mm - -


    OCR Scan     		PDF 2N3553 O-117 O-128 O-131 O-129 20PEP t 3866 power transistor transistor 571 transistor 3866 s transistor d 5702 e d 5703 t 3866 transistor transistor 2N 5688 2N3553 transistor t 3866 3866 transistor 2n RF transistor

    triac zd 607

    Abstract: hep c6004 2sb504 2SC 968 NPN Transistor sje 607 motorola c6004 diode BY127 specifications K872 af118 Motorola Semiconductor hep c3806p
    Text: & SEM ICO N DU CTO R This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Professional service techni­ cian. The information contained herein is based on an analysis of the published


    OCR Scan     		PDF thT404 ZV15A ZY33A ZT696 ZV15B ZY33B ZT697 ZT706 ZV27A ZY62A triac zd 607 hep c6004 2sb504 2SC 968 NPN Transistor sje 607 motorola c6004 diode BY127 specifications K872 af118 Motorola Semiconductor hep c3806p

    AC125K

    Abstract: 6AN7 tungsram 3S035T-1 ecc83 application notes ECL86 DG 7-123 tungsram AC125UZ PENTODE pl 508 ot-400 tungsram
    Text: TUNGSRAM 1 ELECTRON TUBES AND SEMI­ CONDUCTORS 1979 RADIO & TV RECEIVING TUBES OSCILLOSCOPE & MONITOR TUBES TRANSMITTING TUBES, RECTIFIERS & MICROWAVE TUBES SEMICONDUCTORS RECEIVING TUBES CONSUMER TYPES INDUSTRIAL TYPES VOLTAGE REGULATORS TY P E ASSO R TM EN T


    OCR Scan     		PDF 76665N 76889N MA748PC MA709PC jA710PC A711PC iA712PC A723PC HA741PC A747PC AC125K 6AN7 tungsram 3S035T-1 ecc83 application notes ECL86 DG 7-123 tungsram AC125UZ PENTODE pl 508 ot-400 tungsram

    TO128 PACKAGE

    Abstract: la 4127 t 3866 power transistor LA 4440 IC 2n4127 2n5102 2N4040 2N4041 2N5711 2n4428
    Text: 2N5708 SIL IC O N NPN VH F POWER T R A N S IST O R mechanical specification absolute maximum ratings Tease = 25 °C Collector-Base V o lt a g e . 70 V


    OCR Scan     		PDF 2N5708 O-128 O-128 O-117 O-131 O-129 TO128 PACKAGE la 4127 t 3866 power transistor LA 4440 IC 2n4127 2n5102 2N4040 2N4041 2N5711 2n4428

    t 3866 power transistor

    Abstract: transistor 3866 s transistor d 5702 e d 5703 transistor t 3866 t 3866 transistor 2N3866 3866 transistor transistor 3866 2N3866 RF output Design 5698 transistor
    Text: 2N3866 SIL IC O N NPN V H F POWER T R A N S IST O R V H F /U H F M E D IU M POW ER A M P L IF IE R • • 1 W at 400 MHz with 10 dB Gain Distributed Construction mechanical specification All d im e n s io n s a re in rnm TO-39 absolute maximum ratings Tease = 25 °C


    OCR Scan     		PDF 2N3866 O-117 O-128 O-131 O-129 20PEP t 3866 power transistor transistor 3866 s transistor d 5702 e d 5703 transistor t 3866 t 3866 transistor 2N3866 3866 transistor transistor 3866 2N3866 RF output Design 5698 transistor

    2N5070

    Abstract: LA 4440 IC t 3866 power transistor 32-NF-2A-Thread LA 4127 2N3927 to60 2N5026 TO128 PACKAGE c 3866 transistor
    Text: 2N5070 SIL IC O N NPN V H F POWER T R A N S IST O R Emitter Internally Grounded to Case Intermodulation Distortion Better than 30 dB at 25 W P.E.P Emitter Resistor Stabilised mechanical specification absolute maximum ratings Tease = 25 °C Collector-Base V o lt a g e . 65 V


    OCR Scan     		PDF 2N5070 10/32-NF-2A-Thread O-117 O-128 O-131 O-129 2N5070 LA 4440 IC t 3866 power transistor 32-NF-2A-Thread LA 4127 2N3927 to60 2N5026 TO128 PACKAGE c 3866 transistor

    2N3632

    Abstract: LA 4127 LA 4440 IC transistor d 5702 e d 5703 2N5102 Effio ic 4440 2N4431 136 2n 2N3927
    Text: 2N3632 SILICO N NPN VHF POWER TRANSISTO R Distributed Wafer Interdigitai Construction Integrated Diffused Emitter Ballast mechanical data Pins 1,15 " 10/32-NF-2AThread All dimensions are in mm TO-60 * absolute maximum ratings Tease - 25 °C Collector-Base V o lt a g e .


    OCR Scan     		PDF 2N3632 10/32-NF-2A-Thread O-117 O-128 O-131 O-129 2N3632 LA 4127 LA 4440 IC transistor d 5702 e d 5703 2N5102 Effio ic 4440 2N4431 136 2n 2N3927

    ksd 302 250v, 10a

    Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
    Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle


    OCR Scan     		PDF CB-F36c 2SD1642 2SD2182, 2SC4489, -08S- ksd 302 250v, 10a irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643

    t 3866 power transistor

    Abstract: TIC 136 Transistor 2N5016 2n5102 2N5026 ic 4440 2N4127 TO128 PACKAGE 2N5709 2N4040
    Text: 2N5709 SIL IC O N NPIM V H F POWER T R A N SIST O R 873 80 W PEP SIN G L E S ID E B A N D T R A N SIS T O R mechanical specification D IA 4 L absolute maximum ratings T Ca s e = 25 °C Collector-Base V o l t a g e . 7 0 V


    OCR Scan     		PDF 2N5709 O-117 O-128 O-131 O-129 20PEP t 3866 power transistor TIC 136 Transistor 2N5016 2n5102 2N5026 ic 4440 2N4127 TO128 PACKAGE 2N5709 2N4040

    HBF4727A

    Abstract: ZD 607 - triac ZD 607 - triac circuit hbf 4727a TDA3310 hbf4727 HBF4740 DTL-930 7-stage frequency divider BF479S
    Text: / h o f t f o f m A T E ^SEMICONDUCTOR “ PRODUCTS 1979/80 I NT RODUCTI ON This publication aims to provide condensed information on the vast range of standard devices currently produced by SGS-ATES. For easy consultation the products have been divided into several sections according to the main product


    OCR Scan     		PDF

    2N5707

    Abstract: TO128 PACKAGE 2n RF transistor 2N4127 transistor d 5702 Heat Sink to-39 2n4440 2N5687 TO-128 2n4041
    Text: 2N5707 SILICON NPN VH F POWER TRANSISTOR Emitter Isolated from Case Intermodulation Distortion Better Than 30 dB at 25 W P.E.P. Emitter Resistor Stabilised for Class AB S.S.B. Applications mechanical specification TO -128 absolute maximum ratings Tease = 25 °C


    OCR Scan     		PDF 2N5707 O-128 O-117 O-131 O-129 2N5707 TO128 PACKAGE 2n RF transistor 2N4127 transistor d 5702 Heat Sink to-39 2n4440 2N5687 TO-128 2n4041