NMOS2
Abstract: transistor marking code N1G NMOS-2 2N AND 2P-CHANNEL ENHANCEMENT DEVICE MARKING p1g AF9902M Anachip f 1 p2s P1D mosfet LCD Monitor Inverter
Text: AF9902M 2N and 2P-Channel Enhancement Mode Power MOSFET Features General Description - Simple Drive Requirement - Low On-Resistance - Full Bridge Application on LCD Monitor Inverter - Pb Free Plating Product The advanced power MOSFET provides the designer
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AF9902M
9902M
NMOS2
transistor marking code N1G
NMOS-2
2N AND 2P-CHANNEL ENHANCEMENT
DEVICE MARKING p1g
AF9902M
Anachip
f 1 p2s
P1D mosfet
LCD Monitor Inverter
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2N AND 2P-CHANNEL ENHANCEMENT
Abstract: LCD Monitor Inverter marking p2s PMOS-2 NMOS-2 DEVICE MARKING p1g code n1d marking code p1S 2 CHANNEL N-CHANNEL MOSFET marking code P1D
Text: AF9903M 2N and 2P-Channel Enhancement Mode Power MOSFET Features General Description - Simple Drive Requirement - Low On-Resistance - Full Bridge Application on LCD Monitor Inverter - Pb Free Plating Product The advanced power MOSFET provides the designer
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AF9903M
2N AND 2P-CHANNEL ENHANCEMENT
LCD Monitor Inverter
marking p2s
PMOS-2
NMOS-2
DEVICE MARKING p1g
code n1d
marking code p1S
2 CHANNEL N-CHANNEL MOSFET
marking code P1D
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SIEMENS 800
Abstract: 950p to-247 package MTH6N85 2SK351 IRFAF30 21n60n
Text: MOSFET Item Number Part Number Manufacturer V BR DSS loss Max (V) (A) ros (on) (Ohms) Po Max ON) 9FS VGS(th) C|S8 •Oper Max Max tr Max tf Min Max Max W (V) (F) (8) (8) (°0 Package Style MOSFETs, N-Channel Enhancement-Type (Cont'd) . . .5 . .10 BUZ308 BUZ80
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O-220AB
O-218
O-204
204AC
O-238AA
SIEMENS 800
950p to-247 package
MTH6N85
2SK351
IRFAF30
21n60n
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VN1210N5
Abstract: BR 115N sfn02202 sfn02802 sfn02812 RRF530
Text: MOSFET Item Number Part Number Manufacturer V BR DSS loss Max Of) (A) rDs (on) (Ohms) Po Max (W) 9FS Min (S) V GS<tri) Max (V) Cin Max tr Max tf Max (P) (8) (8) T Opw Max Package Style (°C) MOSFETs, N-Channel Enhancement-Type (Cont'd) . . . . 5 • . . .10
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RRF120
RRF520
UFN132
IRrj120
RRF522
SFN02802
SFN02812
SFN106A3
YTF520
IRF120
VN1210N5
BR 115N
sfn02202
RRF530
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mosfet cross reference
Abstract: pj 929 diode pj 1229 diode BSS250 VN0109N5 pj 66 diode pj 929 BSS295 "direct replacement" BSS295 "cross reference" pj 69 diode
Text: Selector Guides Selector Guides MOSFETs The Supertex enhancement-mode and depletion-mode MOSFET families utilize both vertical and lateral double diffused MOS processes. They feature low parasitic capacitances with interdigitated structures for high-frequency operation. Their low gate threshold voltage is
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T0-92
options4206A
ZVN4206C
ZVN4206E
ZVN4306A
TN2106K1
VN2210N3
TN0606N3
TN0606N6
mosfet cross reference
pj 929 diode
pj 1229 diode
BSS250
VN0109N5
pj 66 diode
pj 929
BSS295 "direct replacement"
BSS295 "cross reference"
pj 69 diode
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varistor 565-1
Abstract: Z 151 VARISTOR VARISTOR etc 333 varistor 6kv 3ka 3SM diode VDE 565-1 WXP-103K 4532 MOSFET varistor en132400 varistor 471 14
Text: 2 | Protection Products Short Form Catalog Metal Oxide Varistor VDE Diameters Peak Current, 8/20ms Amps Varistor Voltages 5mm 100, 400, 800 18, 22, 27, 33, 39, 47, 56, 68, 82, 100, 120, 150, 180, 200, 220, 240, 270, 300, 330, 360, 390, 430, 470, 510, 560, 620, 680
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8/20ms
varistor 565-1
Z 151 VARISTOR
VARISTOR etc 333
varistor 6kv 3ka
3SM diode
VDE 565-1
WXP-103K
4532 MOSFET
varistor en132400
varistor 471 14
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Untitled
Abstract: No abstract text available
Text: UNITRODE CORP ÎË 9347963 UNITRODE dF CORP J ^347^1=3 GDlGSlb 5 |~~ 92D 10516 D T - M -/ 3 POWER MOSFET TRANSISTORS , JTX, JTXV 400 Volt, 0.3 Ohm N-Channel FEA TU R ES • Fa st S w itching • Low Drive C urren t • E a se of Parallelin g • No S eco n d B reakd ow n
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MEM563C
Abstract: MEM551 mem 551c diode 30 YF 2N4067 2N3609 MEM955 955A 550C 562C
Text: DUAL P-CHANNEL ENHANCEMENT MODE MOSFETS Part No. *M E M 550 *M E M 550C MEM 551 MEM 551C #*M E M 954 •M E M 9 5 4 A *M E M 954B # MEM 955 MEM 955A MEM 955B 2N 3609 2N 4066 2N 4067 3N 147 3N 148 *3N 151 *3N 165 *3N 166 *3N 188 *3N 189 3N 190 3N 191 MEM 517C2M
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2N6767
Abstract: No abstract text available
Text: POWERMOSFET- TRANSISTORS , JTX JTXV¡¡Jgg 400 Volt, 0.3 Ohm N-Channel FEATURES DESCRIPTION • • • • • • The U nitrode power MOSFET design u tilizes th e m ost advanced technology available. This e fficie n t design achieves a very low Rosiom and a high transconductance.
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supplie-1064
2N6767
2N6768
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mem637
Abstract: mem616 tetrode 3N159 MEM5640 MEM563C MEM617 GP 617 DIODE 3n187 MEM680
Text: DUAL P-CHANNEL ENHANCEMENT MODE MOSFETS Part No. *M E M 550 *M E M 550C MEM 551 MEM 551C #*M E M 954 •M E M 9 5 4 A *M E M 954B # MEM 955 MEM 955A MEM 955B 2N 3609 2N 4066 2N 4067 3N 147 3N 148 *3N 151 *3N 165 *3N 166 *3N 188 *3N 189 3N 190 3N 191 MEM 517C2M
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bdx340
Abstract: Bow94c b0334 Bow93c b0333 BUZ10 d 6283 ic 2N6286 BUZ11 BUZ11S2
Text: F=7 SGS-THOMSON AUTOMOTIVE MD g[^ [llL[l©î[S(5 R00(Si POWER TRANSISTORS HIGH GAIN BIPOLAR DARLINGTONS VcBO v CEO p»ot (A) (V) (V) (W) 2 2 2 5 5 5 6 6 6 8 8 8 8 8 8 8 8 8 8 10 10 10 10 10 10 12 12 12 12 12 20 25 30 30 60 80 100 60 80 100 60 80 100 40 60
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2N6284
bdx340
Bow94c
b0334
Bow93c
b0333
BUZ10
d 6283 ic
2N6286
BUZ11
BUZ11S2
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Bow94c
Abstract: MJE 131 BD 147 tip 220 sgs mosfet SGSD93G b0333 B0680 bow93b bdw 34 a
Text: F=7 SGS-THOMSON AUTOMOTIVE MD g[^ [llL[l©î[S(5 R00(Si POWER TRANSISTORS HIGH GAIN BIPOLAR DARLINGTONS VcBO v CEO (A) (V) (V) (W) 2 2 2 5 5 5 6 6 6 8 8 8 8 8 8 8 8 8 8 10 10 10 10 10 10 12 12 12 12 12 20 25 30 30 60 80 100 60 80 100 60 80 100 40 60 80 80
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BDX53
Bow94c
MJE 131
BD 147
tip 220
sgs mosfet
SGSD93G
b0333
B0680
bow93b
bdw 34 a
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G303
Abstract: 2N6767
Text: HE 0 I 4055452 000*1321, 5 | IN TERNATIONAL Data Sheet No. PD-9.339D RECTIFIER INTERNATIONAL RECTIFIER IOR T -39-13 HEXFETTRANSISTORS *«JAI\ITXV2I\I6768 *JANTXSN6768 JEDEC REGISTERED IM-CHANIMEL G POWER MOSFETs SN6768 SN6767 ‘ QUALIFIED TO MIL-S-19500/543
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MIL-S-19500/543
JAI\ITXV2I\I6768
JANTXSN6768
SN6768
SN6767
2N6768
2N6767
T-39-13
G-306
G303
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RCA SK CROSS-REFERENCE
Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
Text: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered
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KT 819 transistor
Abstract: 2N2222A 338 SF129D SF137D SSY20B KT819W SF127E KFY18 321 KP303W KFY18
Text: Deutsche Post NfD Studiotechnik Fernsehen Bauelemente - Mitteilung Nr. 6 TRANSISTORVERGLEICHSLISTE Herausgebers Halbleitervergleichsgruppe Studiotechnik Fernsehen Deutsche Post Studiotechnik Fernsehen Bauelemente-Mitteilung Nr. 6 Dez. 79 N f D T r a n s i s t o r v e r g l e i c h s l i s t e
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Untitled
Abstract: No abstract text available
Text: Provisional Data Sheet No. PD-9.551B International IQR Rectifier JANTX2N6851 HEXFET POWER MOSFET JANTXV2N6851 [REF: MIL-PRF-19500/564] [GENERIC:IRFF9230] P-CHANNEL -200 Volt, 0.80Q HEXFET H E X F E T tec h n o lo g y is th e key to In te rn atio n al Rectifier’s advanced line of power M O S F E T transis
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JANTX2N6851
JANTXV2N6851
MIL-PRF-19500/564]
IRFF9230]
5S452
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Untitled
Abstract: No abstract text available
Text: I p| j -0 P P I Q Ü Q P Q I Provisional Data Sheet No. PD-9.431 B I O R Rectifier JANTX2N6798 HEXFET POWER MOSFET JANTXV2N6798 [REF:MIL-PRF-19500/557] [GENERIC :IRFF230] N-CHANNEL 200 Volt, 0.40Q HEXFET H E X F E T techn o lo g y is th e key to Intern ation al
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JANTX2N6798
JANTXV2N6798
MIL-PRF-19500/557]
IRFF230]
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Untitled
Abstract: No abstract text available
Text: Int rnQt iOnQI Provisional Data Sheet No. PD-9.550B IQ R Rectifier JANTX2N6849 HEXFET POWER MOSFET JANTXV2N6849 [REF:MIL-PRF-19500/564] [GENERIC:IRFF9130] P -C H A N N E L -100 Volt, 0.300 HEXFET H E X F E T techn o lo g y is the key to International R ectifier’s advanced line of power M O S F E T transis
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JANTX2N6849
JANTXV2N6849
MIL-PRF-19500/564]
IRFF9130]
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Untitled
Abstract: No abstract text available
Text: N o vem b er 1995 FAIRCHILD M ICONDUCTQR i 2N7000 / 2N7002 / NDS7002A N-Channel Enhancement Mode Field Effect Transistor General Description Features High density cell design for low RDS ON . These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density,
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2N7000
2N7002
NDS7002A
400mA
/NDS7002A
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2N7002
Abstract: 2N7000 FAIRCHILD 2N7002 2N700 2n7002 12 2N7002 FAIRCHILD 2N7002A 2N7000 MOSFET 100C NDS7002A
Text: Novem ber 1995 FAIRCHILD M IC D N D U C T O R 2N7000 / 2N7002 / NDS7002A N-Channel Enhancement Mode Field Effect Transistor Features G eneral D escription These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high
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2N7000
2N7002
NDS7002A
400mA
OT-23,
NDS7002A
2N7002A
FAIRCHILD 2N7002
2N700
2n7002 12
2N7002 FAIRCHILD
2N7000 MOSFET
100C
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Untitled
Abstract: No abstract text available
Text: j p j -0 p p Q I j Q p| Q I Provisional Data Sheet No. PD-9.430B I O R Rectifier JANTX2N6796 HEXFET POWER MOSFET JANTXV2N6796 [REF:MIL-PRF-19500/557] [GENERIC:IRFF130] N -C H A N N E L 100 Volt, 0.180 HEXFET Product Summary1 H E X F E T techn o lo g y is th e key to Intern ation al
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JANTX2N6796
JANTXV2N6796
MIL-PRF-19500/557]
IRFF130]
4A55455
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MC2259
Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
Text: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the
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transistor c2060
Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
Text: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,
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AN-134
transistor c2060
Transistor Shortform Datasheet & Cross References
1N4465
C1906 transistor
Germanium itt
3N58
IN939
MC1230F
2N3866 MOTOROLA
C943 transistor
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Bow94c
Abstract: Bow93c box 53c IC SGS transistors b0334 SGS6388 BO 336 b0333 BOW93B SGSP222
Text: F=7 SGS-THOMSON AUTOMOTIVE MD g[^ [llL[l©î[S(5 R00(Si POWER TRANSISTORS HIGH GAIN BIPOLAR DARLINGTONS VcBO v CEO (A) (V) (V) (W) 2 2 2 5 5 5 6 6 6 8 8 8 8 8 8 8 8 8 8 10 10 10 10 10 10 12 12 12 12 12 20 25 30 30 60 80 100 60 80 100 60 80 100 40 60 80 80
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BUZ11
SGSP492
MTP3055A
IRFP153
IRFP151
BUZ11S2
Bow94c
Bow93c
box 53c IC
SGS transistors
b0334
SGS6388
BO 336
b0333
BOW93B
SGSP222
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