2N0615
Abstract: INFINEON PART MARKING to252 BSPD30N06S2-15 P-TO252 SPD30N06S2-15
Text: SPD30N06S2-15 Preliminary data OptiMOS =Power-Transistor Product Summary Feature VDS • N-Channel 55 R DS on • Enhancement mode ID •=175°C operating temperature V 14.7 mΩ 30 • Avalanche rated A P-TO252 • dv/dt rated Type SPD30N06S2-15 Package
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SPD30N06S2-15
P-TO252
Q67040-S4253
2N0615
BSPD30N06S2-15,
SPD30N06S2-15
2N0615
INFINEON PART MARKING to252
BSPD30N06S2-15
P-TO252
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2N0615
Abstract: ANPS071E BSPD30N06S2-15 SPD30N06S2-15
Text: SPD30N06S2-15 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS • Enhancement mode R DS on 55 ID • 175°C operating temperature V 14.7 mΩ 30 • Avalanche rated A P- TO252 -3-11 • dv/dt rated Type SPD30N06S2-15 Package Ordering Code
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Original
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PDF
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SPD30N06S2-15
Q67040-S4253
2N0615
BSPD30N06S2-15,
SPD30N06S2-15
2N0615
ANPS071E
BSPD30N06S2-15
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2N0615
Abstract: ANPS071E BSPD30N06S2-15 SPD30N06S2-15
Text: SPD30N06S2-15 OptiMOS Power-Transistor Product Summary Feature 55 VDS N-Channel Enhancement mode 175°C operating temperature Avalanche rated dv/dt rated RDS on ID V m 14.7 30 A P- TO252 -3-11 Type Package Ordering Code SPD30N06S2-15 P- TO252 -3-11 Q67040-S4253
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Original
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PDF
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SPD30N06S2-15
Q67040-S4253
2N0615
BSPD30N06S2-15,
SPD30N06S2-15
2N0615
ANPS071E
BSPD30N06S2-15
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2N0615
Abstract: SPD30N06S2-15
Text: SPD30N06S2-15 OptiMOS =Power-Transistor Product Summary Feature 55 VDS N-Channel R DS on Enhancement mode ID 175°C operating temperature V m 14.7 30 A P- TO252 -3-11 Avalanche rated dv/dt rated Type SPD30N06S2-15 Package Ordering Code P- TO252 -3-11 Q67040-S4253
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Original
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PDF
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SPD30N06S2-15
SPD30N06S2-15
Q67040-S4253
2N0615
BSPD30N06S2-15,
2N0615
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2N0615
Abstract: P-TO252 SPD30N06S2-15
Text: Preliminary data SPD30N06S2-15 OptiMOS =Power-Transistor Features Product Summary • N-Channel Drain source voltage VDS • Drain-source on-state resistance RDS on Continuous drain current ID Enhancement mode • Avalanche rated 55 V 14.7 mΩ 30 A
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Original
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PDF
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SPD30N06S2-15
P-TO252
Q67040-S4253
2N0615
2N0615
P-TO252
SPD30N06S2-15
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Untitled
Abstract: No abstract text available
Text: IPD30N06S2-15 OptiMOS Power-Transistor Product Summary Features V DS • N-channel - Enhancement mode 55 R DS on ,max (SMD version) • Automotive AEC Q101 qualified ID V 14.7 mΩ 30 A • MSL1 up to 260°C peak reflow • 175°C operating temperature PG-TO252-3-11
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IPD30N06S2-15
PG-TO252-3-11
2N0615
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2N0615
Abstract: IPD30N06S2-15 ANPS071E PG-TO252-3-11
Text: IPD30N06S2-15 OptiMOS Power-Transistor Product Summary Features V DS • N-channel - Enhancement mode 55 R DS on ,max (SMD version) • Automotive AEC Q101 qualified ID V 14.7 mΩ 30 A • MSL1 up to 260°C peak reflow • 175°C operating temperature PG-TO252-3-11
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Original
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PDF
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IPD30N06S2-15
PG-TO252-3-11
2N0615
2N0615
IPD30N06S2-15
ANPS071E
PG-TO252-3-11
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