DIODE H5 SMD
Abstract: 2n06h5 smd diode H5 70H100 ANPS071E SPB80N06S2-H5 SPP80N06S2-H5
Text: SPP80N06S2-H5 SPB80N06S2-H5 OptiMOSâ Power-Transistor Product Summary Feature • N-Channel • Enhancement mode • 175°C operating temperature VDS 55 V RDS on 5.5 mΩ ID 80 A P- TO263 -3-2 • Avalanche rated P- TO220 -3-1 • dv/dt rated Type Package
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SPP80N06S2-H5
SPB80N06S2-H5
Q67060-S6052
2N06H5
Q67060-S6053
BSPP80N06S2-H5
BSPB80N06S2-H5,
DIODE H5 SMD
2n06h5
smd diode H5
70H100
ANPS071E
SPB80N06S2-H5
SPP80N06S2-H5
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2N06H5
Abstract: No abstract text available
Text: SPP80N06S2-H5 SPB80N06S2-H5 OptiMOS =Power-Transistor Product Summary Feature N-Channel Enhancement mode 175°C operating temperature VDS 55 R DS on 5.5 m ID 80 A P- TO263 -3-2 Avalanche rated V P- TO220 -3-1 dv/dt rated Type SPP80N06S2-H5 Package
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Original
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PDF
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SPP80N06S2-H5
SPB80N06S2-H5
Q67060-S6052
Q67060-S6053
2N06H5
BSPP80N06S2-H5
BSPB80N06S2-H5,
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2N06H5
Abstract: smd marking g24 DIODE H5 SMD ANPS071E IPB80N06S2-H5 IPP80N06S2-H5 PG-TO263-3-2 2N06
Text: IPB80N06S2-H5 IPP80N06S2-H5 OptiMOS Power-Transistor Product Summary Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified V DS 55 V R DS on ,max (SMD version) 5.2 mΩ ID 80 A • MSL1 up to 260°C peak reflow • 175°C operating temperature
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PDF
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IPB80N06S2-H5
IPP80N06S2-H5
PG-TO263-3-2
PG-TO220-3-1
SP0002-18162
2N06H5
2N06H5
smd marking g24
DIODE H5 SMD
ANPS071E
IPB80N06S2-H5
IPP80N06S2-H5
PG-TO263-3-2
2N06
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2N06H5
Abstract: Q67060-S6052
Text: SPP80N06S2-H5 SPB80N06S2-H5 Preliminary data OptiMOSâ Power-Transistor Feature Product Summary • N-Channel VDS 55 V RDS on 5.5 mΩ ID 80 A • Enhancement mode • 175°C operating temperature • Avalanche rated P-TO263-3-2 P-TO220-3-1 • dv/dt rated
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Original
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PDF
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SPP80N06S2-H5
SPB80N06S2-H5
P-TO220-3-1
P-TO263-3-2
P-TO220-3-1
Q67060-S6052
Q67060-S6053
2N06H5
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2N06H5
Abstract: ANPS071E SPB80N06S2-H5 SPP80N06S2-H5
Text: SPP80N06S2-H5 SPB80N06S2-H5 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS 55 V • Enhancement mode R DS on 5.5 mΩ ID 80 A • 175°C operating temperature • Avalanche rated P- TO263 -3-2 P- TO220 -3-1 • dv/dt rated Type Package
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Original
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PDF
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SPP80N06S2-H5
SPB80N06S2-H5
Q67060-S6052
2N06H5
Q67060-S6053
BSPP80N06S2-H5
BSPB80N06S2-H5,
2N06H5
ANPS071E
SPB80N06S2-H5
SPP80N06S2-H5
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2N06H5
Abstract: No abstract text available
Text: SPP80N06S2-H5 SPB80N06S2-H5 Preliminary data OptiMOSâ Power-Transistor Feature Product Summary • N-Channel VDS 55 V RDS on 5.5 mΩ ID 80 A • Enhancement mode • 175°C operating temperature • Avalanche rated P-TO263-3-2 P-TO220-3-1 • dv/dt rated
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Original
|
PDF
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SPP80N06S2-H5
SPB80N06S2-H5
P-TO263-3-2
P-TO220-3-1
Q67060-S6052
2N06H5
2N06H5
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