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    2N08L Price and Stock

    JRH Electronics M85049/3722N08L

    CONNECTOR BACKSHELL
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    Torex Semiconductor LTD XC6132N08LMR-G

    IC SUPERVISOR 1 CHANNEL SOT26
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    Torex Semiconductor LTD XC6132N08LER-G

    IC SUPERVISOR 1 CHANNEL 6USPC
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    Glenair Inc M85049/3722N08L

    Connector Accessories Right Angle Non-Environmental Backshell Electroless Nickel - Bulk (Alt: M85049/3722N08L)
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    Interstate Connecting Components M85049/3722N08L
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    Powell Electronics M85049/3722N08L 18 1
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    SOURIAU-SUNBANK M85049/3722N08L

    Circular MIL Spec Backshells Backshell
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    2N08L Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2N08L Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF

    2N08L Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N08L

    Abstract: MTP12N08L 7ROM AN569 2N3904 1N914 221A-04
    Text: Order this data sheet by MTP12N08UD MOTOROLA m SEMICONDUCTOR TECHNICAL DATA I Designerfs I MTPI 2N08L MTP12NIOL Data Sheet Power Field Effect Transistor ,+!. .{,l, .$:,:~,.,\~.G !~,;,I ,:.~,. ‘\.: ?,. ,*,.,.,. .$ ~t. . I N-Channel Enhancement-Mode


    Original     		PDF MTP12N08UD 2N08L MTP12NIOL MK145BP, MTP12N08L 2N08L MTP12N08L 7ROM AN569 2N3904 1N914 221A-04

    2N08L21

    Abstract: 2n08l ANPS071E IPD30N08S2L-21 PG-TO252-3-11
    Text: IPD30N08S2L-21 OptiMOS Power-Transistor Product Summary Features V DS • N-channel Logic Level - Enhancement mode 75 R DS on ,max • Automotive AEC Q101 qualified V 20.5 ID mΩ 30 A • MSL1 up to 260°C peak reflow • 175°C operating temperature PG-TO252-3-11


    Original     		PDF IPD30N08S2L-21 PG-TO252-3-11 2N08L21 2N08L21 2n08l ANPS071E IPD30N08S2L-21 PG-TO252-3-11

    2N08L50

    Abstract: 58W smd smd 58w Q67060-S6062 marking code 58W 04
    Text: SPD22N08S2L-50 Preliminary data OptiMOS â Power-Transistor Feature • N-Channel Product Summary • Enhancement mode VDS 75 V • Logic Level RDS on 50 mΩ • 175°C operating temperature ID 22 A • Avalanche rated P-TO-252-3-11 • dv/dt rated Type


    Original     		PDF SPD22N08S2L-50 P-TO-252-3-11 Q67060-S6062 2N08L50 2N08L50 58W smd smd 58w Q67060-S6062 marking code 58W 04

    2n08l07

    Abstract: 67a smd 2N08L07 POWER 2n08l 2n08l07 marking smd diode 67A s6015 ANPS071E SPB80N08S2L-07 SPP80N08S2L-07
    Text: SPP80N08S2L-07 SPB80N08S2L-07 OptiMOS Power-Transistor Product Summary Feature 75 VDS  N-Channel RDS on  Enhancement mode max. SMD version ID  Logic Level P- TO263 -3-2 175°C operating temperature V 6.8 m 80 A P- TO220 -3-1  Avalanche rated  dv/dt rated


    Original     		PDF SPP80N08S2L-07 SPB80N08S2L-07 Q67060-S6015 Q67060-S6016 2N08L07 BSPP80N08S2L-07 BSPB80N08S2L-07, 2n08l07 67a smd 2N08L07 POWER 2n08l 2n08l07 marking smd diode 67A s6015 ANPS071E SPB80N08S2L-07 SPP80N08S2L-07

    2n08l07

    Abstract: 2N08L07 POWER IPP80N08S2L-07 2n08l07 marking IPB80N08S2L-07 2n08l "2N08L07" 2n08 ANPS071E PG-TO263-3-2
    Text: IPB80N08S2L-07 IPP80N08S2L-07 OptiMOS Power-Transistor Product Summary Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 75 V R DS on ,max (SMD version) 6.8 mΩ ID 80 A • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original     		PDF IPB80N08S2L-07 IPP80N08S2L-07 PG-TO263-3-2 PG-TO220-3-1 SP0002-19051 2N08L07 2n08l07 2N08L07 POWER IPP80N08S2L-07 2n08l07 marking IPB80N08S2L-07 2n08l "2N08L07" 2n08 ANPS071E PG-TO263-3-2

    2N08L21

    Abstract: No abstract text available
    Text: SPD30N08S2L-21 OptiMOS Power-Transistor Product Summary Feature 75 VDS  N-Channel R DS on  Enhancement mode ID  Logic Level V m 20.5 30 A P- TO252 -3-11 175°C operating temperature  Avalanche rated  dv/dt rated Ideal for fast switching buck converter


    Original     		PDF SPD30N08S2L-21 Q67060-S7414 2N08L21 BSPD30N08S2L-21, SPD30N08S2L-21 2N08L21

    2N08L21

    Abstract: BSPD30N08S2L-21 SPD30N08S2L-21 ANPS071E 54AAT
    Text: SPD30N08S2L-21 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS 75 • Enhancement mode R DS on ID • Logic Level V 20.5 mΩ 30 • 175°C operating temperature A P- TO252 -3-11 • Avalanche rated • dv/dt rated Type SPD30N08S2L-21


    Original     		PDF SPD30N08S2L-21 Q67060-S7414 2N08L21 BSPD30N08S2L-21, SPD30N08S2L-21 2N08L21 BSPD30N08S2L-21 ANPS071E 54AAT

    2N08L21

    Abstract: SPD30N08S2L-21 Q67060-S7414
    Text: Preliminary data SPD30N08S2L-21 OptiMOS =Power-Transistor Product Summary Feature 75 VDS • N-Channel RDS on • Enhancement mode 20.5 mΩ 30 ID • Logic Level V A P-TO252-3-1 •=175°C operating temperature • Avalanche rated • dv/dt rated Type


    Original     		PDF SPD30N08S2L-21 P-TO252-3-1 P-TO252-3-1 Q67060-S7414 2N08L21 2N08L21 SPD30N08S2L-21 Q67060-S7414

    2n08

    Abstract: 2n08l Catalytic Converter NTF2N08 NTF2N08L NTF3N08 NTF3N08L
    Text: NTF2N08, 2N08L Product Preview 80 V Power MOSFET ON Semiconductor utilizes its latest MOSFET technology process to manufacture 80 V power MOSFET devices to achieve the lowest possible on–resistance per silicon area. These 80 V devices are designed for Power Management solutions in 42 V Automotive


    Original     		PDF NTF2N08, NTF2N08L 2N08L r14525 NTF2N08/D 2n08 Catalytic Converter NTF2N08 NTF2N08L NTF3N08 NTF3N08L

    2N08L50

    Abstract: SPD22N08S2L-50
    Text: SPD22N08S2L-50 OptiMOSâ Power-Transistor Product Summary Feature • N-Channel • Enhancement mode • Logic Level VDS 75 V RDS on 50 mΩ ID 25 A P- TO252 -3-11 • 175°C operating temperature • Avalanche rated • dv/dt rated Type Package Ordering Code


    Original     		PDF SPD22N08S2L-50 Q67060-S6062 2N08L50 BSPD22N08S2L-50, SPD22N08S2L-50 2N08L50

    D67A

    Abstract: 2n08l07 67a smd 2N08L07 POWER smd diode 67A 2n08l 2n08l07 marking ANPS071E SPB80N08S2L-07 SPP80N08S2L-07
    Text: SPP80N08S2L-07 SPB80N08S2L-07 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS 75 V • Enhancement mode RDS on max. SMD version 6.8 mΩ • Logic Level ID 80 A • 175°C operating temperature P- TO263 -3-2 P- TO220 -3-1 • Avalanche rated


    Original     		PDF SPP80N08S2L-07 SPB80N08S2L-07 Q67060-S6015 2N08L07 Q67060-S6016 BSPP80N08S2L-07 BSPB80N08S2L-07, D67A 2n08l07 67a smd 2N08L07 POWER smd diode 67A 2n08l 2n08l07 marking ANPS071E SPB80N08S2L-07 SPP80N08S2L-07

    Untitled

    Abstract: No abstract text available
    Text: SPD22N08S2L-50 OptiMOS Power-Transistor Product Summary Feature  N-Channel  Enhancement mode  Logic Level VDS 75 V R DS on 50 m ID 22 A P- TO252 -3-11 175°C operating temperature  Avalanche rated  dv/dt rated Type SPD22N08S2L-50 Package Ordering Code


    Original     		PDF SPD22N08S2L-50 Q67060-S6062 2N08L50 BSPD22N08S2L-50, SPD22N08S2L-50

    2N08L50

    Abstract: 2n08 100E80
    Text: SPD22N08S2L-50 OptiMOS =Power-Transistor Product Summary Feature  N-Channel  Enhancement mode  Logic Level VDS 75 V R DS on 50 m ID 25 A P- TO252 -3-11 175°C operating temperature  Avalanche rated  dv/dt rated Type SPD22N08S2L-50 Package Ordering Code


    Original     		PDF SPD22N08S2L-50 SPD22N08S2L-50 Q67060-S6062 2N08L50 BSPD22N08S2L-50, 2N08L50 2n08 100E80

    2N08L50

    Abstract: IPD22N08S2L-50 PG-TO252-3-11 dd37
    Text: IPD22N08S2L-50 OptiMOS Power-Transistor Product Summary Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 75 V R DS on ,max 50 mΩ ID 25 A • MSL1 up to 260°C peak reflow • 175°C operating temperature PG-TO252-3-11


    Original     		PDF IPD22N08S2L-50 PG-TO252-3-11 2N08L50 2N08L50 IPD22N08S2L-50 PG-TO252-3-11 dd37

    2n08l07

    Abstract: 67a smd 2N08L07 POWER "2N08L07" smd diode 67A smd code "67A" 2n08l07 marking diode um 67A Q67060-S6016 smd 67a
    Text: SPP80N08S2L-07 SPB80N08S2L-07 OptiMOS =Power-Transistor Product Summary Feature 75 VDS  N-Channel RDS on  Enhancement mode max. SMD version ID  Logic Level P- TO263 -3-2 175°C operating temperature V 6.8 m 80 A P- TO220 -3-1  Avalanche rated  dv/dt rated


    Original     		PDF SPP80N08S2L-07 SPB80N08S2L-07 Q67060-S6015 Q67060-S6016 2N08L07 BSPP80N08S2L-07 BSPB80N08S2L-07, 67a smd 2N08L07 POWER "2N08L07" smd diode 67A smd code "67A" 2n08l07 marking diode um 67A Q67060-S6016 smd 67a

    67a smd

    Abstract: 2n08l07 2N08L07 POWER SPP80N08S2L-07 "2N08L07" smd diode 67A BR 303 2n08l07 marking s6016 smd 67a
    Text: SPP80N08S2L-07 SPB80N08S2L-07 Preliminary data OptiMOS =Power-Transistor Product Summary Feature • N-Channel • Enhancement mode • Logic Level VDS 75 V RDS on max. SMD version 6.8 mΩ ID 80 A P-TO263-3-2 •=175°C operating temperature P-TO220-3-1


    Original     		PDF SPP80N08S2L-07 SPB80N08S2L-07 P-TO263-3-2 P-TO220-3-1 P-TO220-3-1 Q67060-S6015 2N08L07 P-TO263-3-2 67a smd 2n08l07 2N08L07 POWER SPP80N08S2L-07 "2N08L07" smd diode 67A BR 303 2n08l07 marking s6016 smd 67a

    2N08L21

    Abstract: SPD30N08S2L-21 ANPS071E BSPD30N08S2L-21
    Text: SPD30N08S2L-21 OptiMOSâ Power-Transistor Product Summary Feature VDS • N-Channel 75 R DS on • Enhancement mode ID • Logic Level V 20.5 mΩ 30 A P- TO252 -3-11 • 175°C operating temperature • Avalanche rated • dv/dt rated Type SPD30N08S2L-21


    Original     		PDF SPD30N08S2L-21 Q67060-S7414 2N08L21 BSPD30N08S2L-21, SPD30N08S2L-21 2N08L21 ANPS071E BSPD30N08S2L-21

    2N08L21

    Abstract: kv 21 fs 140 SPD30N08S2L-21
    Text: SPD30N08S2L-21 OptiMOS =Power-Transistor Product Summary Feature 75 VDS  N-Channel R DS on  Enhancement mode ID  Logic Level V m 20.5 30 A P- TO252 -3-11 175°C operating temperature  Avalanche rated  dv/dt rated Type SPD30N08S2L-21 Package Ordering Code


    Original     		PDF SPD30N08S2L-21 SPD30N08S2L-21 Q67060-S7414 2N08L21 BSPD30N08S2L-21, 2N08L21 kv 21 fs 140

    2N08L50

    Abstract: SPD22N08S2L-50 D11A
    Text: SPD22N08S2L-50 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS 75 V • Enhancement mode R DS on 50 mΩ ID 25 A • Logic Level • 175°C operating temperature P- TO252 -3-11 • Avalanche rated • dv/dt rated Type SPD22N08S2L-50


    Original     		PDF SPD22N08S2L-50 Q67060-S6062 2N08L50 BSPD22N08S2L-50, SPD22N08S2L-50 2N08L50 D11A