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    2N1131 Price and Stock

    Microchip Technology Inc 2N1131

    POWER BJT
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    Microchip Technology Inc 2N1131L

    POWER BJT
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    Central Semiconductor Corp 2N1131-PBFREE

    TRANS PNP 50V 0.6A TO39
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    Central Semiconductor Corp 2N1131A-PBFREE

    TRANS PNP 40V TO39
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    2N1131 Datasheets (67)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N1131 Microsemi LOW POWER PNP SILICON TRANSISTOR Original PDF
    2N1131 Microsemi BJT, PNP, Low Power Transistor, VCB0 50V, IC 0.6A Original PDF
    2N1131 Central Semiconductor METAL CAN Transistors Scan PDF
    2N1131 Central Semiconductor Metal Can Transistors Scan PDF
    2N1131 Ferranti Semiconductors Quick Reference Guide 1985 Scan PDF
    2N1131 Ferranti Semiconductors Metal Can Transistors (Short Form) Scan PDF
    2N1131 Ferranti Semiconductors Shortform Data Book 1971 Short Form PDF
    2N1131 General Diode Transistor Selection Guide Scan PDF
    2N1131 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N1131 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N1131 Unknown Shortform Electronic Component Datasheets Short Form PDF
    2N1131 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N1131 Unknown Vintage Transistor Datasheets Scan PDF
    2N1131 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N1131 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N1131 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N1131 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2N1131 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N1131 Raytheon Selection Guide 1977 Scan PDF
    2N1131 Semelab Low Frequency Silicon Power NPN Transistor Scan PDF

    2N1131 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2N1131L

    Abstract: No abstract text available
    Text: 2N1131L Dimensions in mm inches . 8.51 (0.34) 9.40 (0.37) Bipolar PNP Device in a Hermetically sealed TO5 Metal Package. 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 38.00 (1.5) min. Bipolar PNP Device. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia.


    Original     		2N1131L O205AA) 20-Aug-02 2N1131L PDF

    2N1131

    Abstract: No abstract text available
    Text: 2N1131 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Dio. 1 of 2 HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW ITEMS |RFQ| Home 2N1131 Availability Online Store


    Original     		2N1131 2N1131 STV3208 LM3909N PDF

    2n2369 avalanche

    Abstract: 2n4949 2N7373 2N1711 gc. marking 2N1131 2N2222 2N2369 2N2432 2N2484
    Text: Open Project Status Spec Tech Action Status 114 H RK CORRECTION TO CONFORMANCE INSP FORMAT FD TO EDIT 6 APR 2010 9/29/2009 124 RK CORRECTION TO TEST RATINGS TABLE ID TO EDIT 23 OCT 2010 6/15/2010 177 H GC 2N1131 ADD FREQ TO A4, HOB, HIB AND HRB DATED TO TOM 29 OCT 2010


    Original     		2N1131 2N718A 2N1711 2N4949 5961-E084 5980-E011 5980-E010 5961-E087 5961-E079 2n2369 avalanche 2N7373 gc. marking 2N2222 2N2369 2N2432 2N2484 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N1131+JAN Transistors Si PNP Lo-Pwr BJT Military/High-RelY V BR CEO (V)35 V(BR)CBO (V)50 I(C) Max. (A)600m Absolute Max. Power Diss. (W)600m Maximum Operating Temp (øC)175õ I(CBO) Max. (A)100u @V(CBO) (V) (Test Condition)50 V(CE)sat Max. (V)1.5 @I(C) (A) (Test Condition)150m


    Original     		2N1131 PDF

    2N1132

    Abstract: 2N1131 2N1131L 2N1132L
    Text: TECHNICAL DATA LOW POWER PNP SILICON TRANSISTOR Qualified per MIL-PRF-19500/177 Devices Qualified Level 2N1131 2N1131L 2N1132 2N1132L JAN JANTX TO-39* MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current


    Original     		MIL-PRF-19500/177 2N1131 2N1131L 2N1132 2N1132L 2N1131, 2N1311L, 2N1312L 2N1132 2N1131 2N1131L 2N1132L PDF

    2N1131

    Abstract: No abstract text available
    Text: 2N1131 w w w. c e n t r a l s e m i . c o m SILICON PNP TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N1131 is a silicon PNP transistor mounted in a hermetically sealed package designed for medium current switching applications. MARKING: FULL PART NUMBER


    Original     		2N1131 2N1131 100mA, 100mA 150mA, 20MHz 100kHz 150mA PDF

    MIL-S-19500

    Abstract: 2902n TRANSISTOR 2n697 2N3700 DIE MIL-S-19500 FOR POWER LINE TRANSISTOR 2N497 2N497 JAN 2n2222 jan 2N657 2N910 JAN
    Text: Winter 1997-1998 Microsemi's Watertown division received QPL Status on the following transistor part types in August 1997. PART TYPE 2N497 & S 2N498 & S 2N656 & S 2N657 & S 2N696 & S 2N697 & S 2N1131 & L 2N1132 & L 2N718A 2N1613 & L 2N720A 2N1893 & S 2N1711 & S


    Original     		2N497 2N498 2N656 2N657 2N696 2N697 2N1131 2N1132 2N718A 2N1613 MIL-S-19500 2902n TRANSISTOR 2n697 2N3700 DIE MIL-S-19500 FOR POWER LINE TRANSISTOR 2N497 2N497 JAN 2n2222 jan 2N657 2N910 JAN PDF

    Diode 400V 5A

    Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
    Text: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM


    Original     		2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 Diode 400V 5A lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN PDF

    2N1132

    Abstract: 2N1131 2N1311 2N1131L 2N1132L ic4050 2n1312 low power pnp
    Text: TECHNICAL DATA LOW POWER PNP SILICON TRANSISTOR Qualified per MIL-PRF-19500/177 Devices Qualified Level 2N1131 2N1131L 2N1132 2N1132L JAN JANTX TO-39* MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current


    Original     		MIL-PRF-19500/177 2N1131 2N1131L 2N1132 2N1132L 2N1131, 2N1311L, 2N1312L 2N1132 2N1131 2N1311 2N1131L 2N1132L ic4050 2n1312 low power pnp PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N1131A Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)40 V(BR)CBO (V)60 I(C) Max. (A)600m Absolute Max. Power Diss. (W)600m Maximum Operating Temp (øC)175õ I(CBO) Max. (A)500n @V(CBO) (V) (Test Condition)45 V(CE)sat Max. (V)1.5 @I(C) (A) (Test Condition)150m


    Original     		2N1131A PDF

    2N1131A

    Abstract: No abstract text available
    Text: <£&mi-dond\JLcko\ 20 STERN AVE SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212) 227*6005 FAX: (973) 376-8960 2N1131A PNP SILICON PLANAR TRANSISTOR MECHANICAL DATA CASE: TERMINAL CONNECTIONS: JEDEC TO-5 Lead 1 Emitter Lead 2 Base Lead 3 Collector (Electrically connected to case>


    Original     		2N1131A 2N1131A PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N1131L+JAN Transistors Si PNP Lo-Pwr BJT Military/High-RelY V BR CEO (V)35 V(BR)CBO (V)50 I(C) Max. (A)600m Absolute Max. Power Diss. (W)600m Maximum Operating Temp (øC)175õ I(CBO) Max. (A)100u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		2N1131L Freq50M PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N1131 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)35 V(BR)CBO (V)50 I(C) Max. (A)600m Absolute Max. Power Diss. (W)600m Maximum Operating Temp (øC)175õ I(CBO) Max. (A)100u @V(CBO) (V) (Test Condition)50 V(CE)sat Max. (V)1.5 @I(C) (A) (Test Condition)150m


    Original     		2N1131 PDF

    1N6762

    Abstract: JANKC2N2907A NES 2n4405 2N5684 JANTX 2n3031 2N6351 2N5415 2N2907AUB
    Text: Future QML Qualified Products New Products Product Lines Custom Packaging New Products Announcement Read about what's new at NES QML Program Complete listing of our MIL-PRF-19500 JANTX and JANTXV qualified products. Click here to see our Future Quals. Product Line Index


    Original     		MIL-PRF-19500 2N720A 2N1131 2N1132 2N1893 JANHC2N2222A JANKC2N2222A JANH3057A 2N3250A 2N3251A 1N6762 JANKC2N2907A NES 2n4405 2N5684 JANTX 2n3031 2N6351 2N5415 2N2907AUB PDF

    SP2605F

    Abstract: 2N2222A raytheon low noise transistors rf 2N4033 2N0720A 2N0718A 2n2907a raytheon 2N065 SP2605QF "dual TRANSISTORs" pnp npn
    Text: Small Signal Transistors Small Signal Transistors Hermetic Seal Raytheon Semiconductor offers a wide variety of Industry standard and sole source high reliability (JAN, JANTX, Product 2N0657* 2N0697* 2N0706* 2N0718A 2N0720A* 2N0910* 2N0918 2N0930 2N1131"


    OCR Scan     		2N0657* 2N0697* 2N0706* 2N0718A 2N0720A* 2N0910* 2N0918 2N0930 2N1131" 2N1132* SP2605F 2N2222A raytheon low noise transistors rf 2N4033 2N0720A 2n2907a raytheon 2N065 SP2605QF "dual TRANSISTORs" pnp npn PDF

    BCY78

    Abstract: BC107 2N1131 2N1132 2N3053 2N4037 2N696 2N697 BC177 BCY59
    Text: N P N LOW LEV EL < Type o< CD Max 2N3053 60 V ceO U 'C: V mA V mA mA 40 700 1.4 150 15 !c Ib Min f T at h FE at Min. Max. 50 250 Pto, at Tamb Package Comple­ ment = 25°C lc !c mW mA MHz mA 150 100 50 1000 TO-39 2N4037 50 600 TO-39 2N1131 2N1132 150 15 20


    OCR Scan     		2N3053 2N4037 2N696 2N1131 2N697 2N1132 BFY51 BC107 BC177 BCY59 BCY78 2N1131 2N1132 2N4037 BC177 PDF

    TI429

    Abstract: TI428
    Text: TYPES 2N2393, 2N2394 P-N-P SILICON TRANSISTORS B U L L E T I N NO. D L - S 6 46063, O C T O B E R 1964 FOR GENERAL PURPOSE AMPLIFIER AND SWITCHING APPLICATIONS Formerly TI428 and TI429 • Electrically Similar to 2N1131 and 2N1132 • Compatible Package For Interfacing With Integrated Circuits and


    OCR Scan     		2N2393, 2N2394 TI428 TI429 2N1131 2N1132 PR00UCT TI429 PDF

    TRANSistor BC108

    Abstract: 2n4001 TRANSISTOR TRANSISTOR BC140 Transistor BC177 applications of Transistor BC108 2N40361 Transistor BCY58 2N3419 2N1132 2N3053
    Text: NPN LOW LEVEL < Type o< CD Max 2N3053 60 V ce O U 'C: V mA V mA mA 40 700 1.4 150 15 !c Ib h FE Min. Max. 50 250 Min f T at at Pto, at Tamb Package Comple­ ment = 25°C lc !c mW m A MH z m A 150 100 50 1000 TO-39 2N4037 150 80 50 600 TO-39 2N1131 150 100


    OCR Scan     		2N3053 2N4037 2N696 2N1131 2N697 2N1132 BFY51 BC107 BC177 BCY59 TRANSistor BC108 2n4001 TRANSISTOR TRANSISTOR BC140 Transistor BC177 applications of Transistor BC108 2N40361 Transistor BCY58 2N3419 2N1132 PDF

    2N1131

    Abstract: 2N1132 2N3053 2N4037 2N696 2N697 BC107 BC177 BCY59 BCY79
    Text: NPN LOW LEVEL < Type o< CD Max 2N3053 60 V ceO U 'C: V mA V mA mA 40 700 1.4 150 15 !c Ib Min f T at h FE at Min. Max. 50 250 Pto, at Tamb Package Comple­ ment = 25°C lc !c mW mA MHz mA 150 100 50 1000 TO-39 2N4037 50 600 TO-39 2N1131 2N1132 150 15 20 60


    OCR Scan     		2N3053 2N4037 2N696 2N1131 2N697 2N1132 BFY51 BC107 BC177 BCY59 2N1131 2N1132 2N4037 BC177 BCY79 PDF

    2N1132

    Abstract: 2N1131
    Text: TYPES 2N1131, 2N1132 P-N-P SILICON TRANSISTORS B U L L E T IN NO. D L-S 731775, J U N E 1961- R E V IS E D M A R C H 1973 GENERAL PURPOSE MEDIUM-POWER TRANSISTORS • 2 Watts at 2S°C Case Temperature • Complements to 2N696 and 2N697 • 10-ohm Saturation Resistance max


    OCR Scan     		2N1131, 2N1132 2N696 2N697 10-ohm 2N1131 PDF

    BC16

    Abstract: 2N1131 2N1132 2N3053 2N4037 2N696 2N697 BC107 BC177 BCY59
    Text: NPN LOW LEVEL < Type o< CD Max 2N3053 60 V ce O U 'C: V mA V mA mA 40 700 1.4 150 15 !c Ib h FE Min. Max. 50 250 Min f T at at Pto, at Tamb Package Comple­ ment = 25°C lc !c mW m A MH z m A 150 100 50 1000 TO-39 2N4037 150 80 50 600 TO-39 2N1131 150 100


    OCR Scan     		2N3053 2N4037 2N696 2N1131 2N697 2N1132 BFY51 BC107 BC177 BCY59 BC16 2N1131 2N1132 2N4037 BC177 PDF

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: 5LE J> m m057& 000btitiS 332 • ZETB^'2 '*7' 0 { NPN LOW LEVEL ZETEX SEMICONDUCTORS Type V CB V ceo V M ax lc V mA M a x V CE sat at V k mA Min f-jat hFE at !b Min M ax 'c m A MHz mA mA Continued P.ot at =ta Package Comple­ ment mW 2N3053 60 40 700 1.4


    OCR Scan     		000bt 2N3053 2N696 2N697 BFY51 BSY51 BSY52 BC107 BCY59 BCY56 PDF

    TO-39 1000 V

    Abstract: No abstract text available
    Text: NPN LOW LEVEL TABLE 1 - NPN SILICON PLANAR LOW LEVEL TRANSISTORS The devices show n in this table are low level transistors designed for small and medium signal, low and medium power amplification from DC to radio frequencies in Commercial, Industrial and Military


    OCR Scan     		BC108 ZT180 ZT187 2N706A 2N706 BCY57 BSY95A TO-39 1000 V PDF