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Raytheon


Raytheon 2N1132LJAN
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	2N1132LJAN		4			1 $71.2046 10 $67.6444 100 $67.6444 1000 $67.6444 10000 $67.6444	Buy Now

2N1132L Datasheets (4)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
2N1132L		Microsemi	BJT, PNP, Low Power Transistor, VCB0 50V, IC 0.6A		Original	PDF
2N1132L		Microsemi	LOW POWER PNP SILICON TRANSISTOR		Original	PDF
2N1132LJAN		New England Semiconductor	LOW POWER PNP SILICON TRANSISTOR		Original	PDF
2N1132LJANTX		New England Semiconductor	LOW POWER PNP SILICON TRANSISTOR		Original	PDF

2N1132L Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
2N1132 Abstract: 2N1131 2N1131L 2N1132L Contextual Info: TECHNICAL DATA LOW POWER PNP SILICON TRANSISTOR Qualified per MIL-PRF-19500/177 Devices Qualified Level 2N1131 2N1131L 2N1132 2N1132L JAN JANTX TO-39* MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current	Original	MIL-PRF-19500/177 2N1131 2N1131L 2N1132 2N1132L 2N1131, 2N1311L, 2N1312L 2N1132 2N1131 2N1131L 2N1132L	PDF
2N1132 Abstract: 2N1131 2N1311 2N1131L 2N1132L ic4050 2n1312 low power pnp Contextual Info: TECHNICAL DATA LOW POWER PNP SILICON TRANSISTOR Qualified per MIL-PRF-19500/177 Devices Qualified Level 2N1131 2N1131L 2N1132 2N1132L JAN JANTX TO-39* MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current	Original	MIL-PRF-19500/177 2N1131 2N1131L 2N1132 2N1132L 2N1131, 2N1311L, 2N1312L 2N1132 2N1131 2N1311 2N1131L 2N1132L ic4050 2n1312 low power pnp	PDF
Contextual Info: 2N1132L+JAN Transistors Si PNP Lo-Pwr BJT Military/High-RelY V BR CEO (V)35 V(BR)CBO (V)50 I(C) Max. (A)600m Absolute Max. Power Diss. (W)600m Maximum Operating Temp (øC)175õ I(CBO) Max. (A)100u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)	Original	2N1132L Freq60M	PDF
2N7058 Abstract: ytf830 2N7057 2N769 YTF840 2n1565 VNP006A VNM005A 2SA1091 2N7066 Contextual Info: STI Type: VNL005A Notes: Breakdown Voltage: 350 Continuous Current: 25 RDS on Ohm: .20 Trans Conductance Mhos: 10 Trans Conductance A: 10 Gate Threshold min: 2.0 Gate Threshold max: 5.0 Resistance Switching ton: 60 Resistance Switching toff: 180 Resistance Switching ID: 20	Original	VNL005A O-204AA/TO-3 VNM006A VNM005A 2N1717 2N1890 O-205AD/TO-39 2N7058 ytf830 2N7057 2N769 YTF840 2n1565 VNP006A VNM005A 2SA1091 2N7066	PDF
2N1132 Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 LOW POWER PNP SILICONTRANSISTOR	Original	MIL-PRF-19500/177 2N1131 2N1131L 2N1132 2N1132L 2N1131 2N1131L T4-LDS-0187 2N1132	PDF
2N1131 Abstract: 2n1132 6840 Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 LOW POWER PNP SILICON TRANSISTOR	Original	MIL-PRF-19500/177 2N1131 2N1131L 2N1132 2N1132L O-39nd 2N1132 2N1131L 6840	PDF
2N1131 Abstract: 2N1131L 2N1132 2N1132L tl 451 177G Contextual Info: INCH-POUND The documentation and process conversion measures necessary to comply with this document shall be completed by 6 July 2009. MIL-PRF-19500/177G 6 April 2009 SUPERSEDING MIL-PRF-19500/177F 4 August 1999 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON LOW-POWER	Original	MIL-PRF-19500/177G MIL-PRF-19500/177F 2N1131, 2N1131L, 2N1132, 2N1132L, MIL-PRF-19500. 2N1131 2N1131L 2N1132 2N1132L tl 451 177G	PDF
2n1131 Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 LOW POWER PNP SILICONTRANSISTOR	Original	MIL-PRF-19500/177 2N1131 2N1131L 2N1132 2N1132L 2N1131 2N1131L T4-LDS-0187	PDF
2N1131 Abstract: 2N1132 2N1131L 2N1132L MIL-PRF19500 Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 4 November 1999. INCH-POUND MIL-PRF-19500/177F 4 August 1999 SUPERSEDING MIL-S-19500/177E 8 February 1995 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, LOW-POWER	Original	MIL-PRF-19500/177F MIL-S-19500/177E 2N1131, 2N1131L, 2N1132, 2N1132L, MIL-PRF-19500. 2N1131 2N1132 2N1131L 2N1132L MIL-PRF19500	PDF
2n1131 Abstract: 2N1132 Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 LOW POWER PNP SILICONTRANSISTOR	Original	MIL-PRF-19500/177 2N1131 2N1131L 2N1132 2N1132L 2N1132 2N1131L T4-LDS-0187	PDF