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    2N12 Search Results

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    Part ECAD Model Manufacturer Description Download Buy
    LM2672N-12/NOPB Texas Instruments SIMPLE SWITCHER® 6.5V to 40V, 1A Low Component Count Step-Down Regulator 8-PDIP -40 to 125 Visit Texas Instruments Buy
    SF Impression Pixel

    2N12 Price and Stock

    Walsin Technology Corporation 0402N121F500CT

    CAP CER 120PF 50V C0G/NP0 0402
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    DigiKey 0402N121F500CT Digi-Reel 51,989 1
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    Chip-Germany GmbH 0402N121F500CT 4,321
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    Walsin Technology Corporation 0402N120J500CT

    CAP CER 12PF 50V C0G/NP0 0402
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    Nisshinbo Micro Devices RP102N121D-TR-FE

    IC REG LINEAR 1.2V 300MA SOT23-5
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    DigiKey RP102N121D-TR-FE Cut Tape 2,078 1
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    STMicroelectronics STW12N120K5

    MOSFET N-CH 1200V 12A TO247
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    DigiKey STW12N120K5 Tube 1,177 1
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    STMicroelectronics STP12N120K5

    MOSFET N-CH 1200V 12A TO220
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    2N12 Datasheets (500)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N-12 Inmet ATTENUATOR Scan PDF
    2N12 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N120 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N120 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N120 Unknown GE Transistor Specifications Scan PDF
    2N120 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N120 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N120 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N120 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N120 Unknown Vintage Transistor Datasheets Scan PDF
    2N1200 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N1200 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N1200 Unknown Transistor Replacements Scan PDF
    2N1200 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N1200 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N1200 Unknown Discontinued Transistor Data Book 1975 Scan PDF
    2N1200 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N1201 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N1201 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N1201 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    ...

    2N12 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SA1211

    Abstract: A5T4061 A8T4061 LOW-POWER SILICON PNP TP5372 ST8704 st823 BCY18 KT209D ST8014
    Text: LOW-POWER SILICON PNP Item Number Part Number 10 15 20 25 30 35 40 45 50 55 -60 -65 -70 75 -80 85 90 - 95 Y BR CEO hFE (V) V(BR)CEO 5 Manufacturer 2SA504 2N5448 BFT61 BFT61 TD2905 2N937 ST8700 KT214El BCY18 BCY18 2N3527 PN5138 2N5138 2N1255 BC351 BC351A BC351B


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    PDF 2SA504 2N5448 BFT61 TD2905 2N937 ST8700 KT214El BCY18 2SA1211 A5T4061 A8T4061 LOW-POWER SILICON PNP TP5372 ST8704 st823 KT209D ST8014

    PA6015A

    Abstract: 2n2570 KT3101A-2 BF250 SG119 2N1269 2SC1071 2S078 LOW-POWER SILICON NPN PA6015
    Text: LOW-POWER SILICON NPN Item Number Part Number 10 2Nl199A 2N770 2N770 2N3511 2N918 2N1268 2N1271 2N1139 2N728 FMMT2369 2N2~t U 15 20 2N1006 2Nl199 PN5131 PN5131 PN5131 2N476 2N1417 2N1663 2N5131 ~~~~~ 25 30 2N771 MPS5131 MPS5131 AST5220 2N5220 BF250 04024 A5T5219


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    PDF 2Nl199A 2N770 2N3511 2N918 2N1268 2N1271 2N1139 2N728 FMMT2369 PA6015A 2n2570 KT3101A-2 BF250 SG119 2N1269 2SC1071 2S078 LOW-POWER SILICON NPN PA6015

    Untitled

    Abstract: No abstract text available
    Text: 2N1261 Ge PNP Power BJT 24.99 Transistors Transistors Bipolar Ge PNP Power Bipola. Page 1 of 1 Enter Your Part # Home Part Number: 2N1261 Online Store 2N1261 Diodes Ge PNP Pow er BJT Transistors Enter code INTER3 at checkout.* Integrated Circuits Optoelectronics


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    PDF 2N1261 2N1261 com/2n1261

    Untitled

    Abstract: No abstract text available
    Text: 2N1295 Transistors Ge PNP Power BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)80 I(C) Max. (A)3.0 Absolute Max. Power Diss. (W)20 Maximum Operating Temp (øC)85õ I(CBO) Max. (A)2.0m @V(CBO) (V) (Test Condition)80 V(CE)sat Max. (V)1.0 @I(C) (A) (Test Condition)1.0


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    PDF 2N1295

    2SB641

    Abstract: BC181 3SM diode CS9012 SF158 2S302 LOW-POWER SILICON PNP 2N924 BCZ10 HA9048
    Text: LOW-POWER SILICON PNP Item Number Part Number 2N1221 2S3030 2S3030 BCZ10 2S302 HA9048 HA9048 TP3S38 2N923 BCY28 5 10 ~~T~~8A 2S3230 A5T3S38 2N2696 2N2927 OC200 OC200 SS3638 TMPT3S38 15 20 ~~~~~8 MPS3638 A5T5226 2N5226 PN3638 2N2695 2N3638 2S323 2S323 25 30


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    PDF 2N1221 2S3030 BCZ10 2S302 HA9048 TP3S38 2N923 BCY28 2SB641 BC181 3SM diode CS9012 SF158 LOW-POWER SILICON PNP 2N924

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    Abstract: No abstract text available
    Text: 2N1232 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A) Absolute Max. Power Diss. (W)400m Maximum Operating Temp (øC)160õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)50 V(CE)sat Max. (V).20 @I(C) (A) (Test Condition)10m


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    PDF 2N1232

    Untitled

    Abstract: No abstract text available
    Text: 2N127 Transistors Ge NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V) V(BR)CBO (V)10 I(C) Max. (A)8.0m Absolute Max. Power Diss. (W)50m Maximum Operating Temp (øC)75õ I(CBO) Max. (A)2.0uØ @V(CBO) (V) (Test Condition)5.0 h(FE) Min. Current gain.100 h(FE) Max. Current gain.200


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    PDF 2N127

    Untitled

    Abstract: No abstract text available
    Text: 2N1249 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)6.0 V(BR)CBO (V)6.0 I(C) Max. (A)5.0m Absolute Max. Power Diss. (W)30m Maximum Operating Temp (øC)155þ I(CBO) Max. (A)10n @V(CBO) (V) (Test Condition)3.0 V(CE)sat Max. (V) @I(C) (A) (Test Condition)


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    PDF 2N1249

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    Abstract: No abstract text available
    Text: 2N129 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)4.5 V(BR)CBO (V) I(C) Max. (A)5.0m Absolute Max. Power Diss. (W)30m Maximum Operating Temp (øC)100õ I(CBO) Max. (A)3.0u @V(CBO) (V) (Test Condition) h(FE) Min. Current gain. h(FE) Max. Current gain.


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    PDF 2N129

    2N1273

    Abstract: No abstract text available
    Text: 2N1273 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)15ã V(BR)CBO (V)15 I(C) Max. (A)200m Absolute Max. Power Diss. (W)250m Maximum Operating Temp (øC)100þ I(CBO) Max. (A)14u @V(CBO) (V) (Test Condition)12 h(FE) Min. Current gain.27 h(FE) Max. Current gain.165


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    PDF 2N1273

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    Abstract: No abstract text available
    Text: 2N1299 Transistors Ge NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)20ã V(BR)CBO (V)40 I(C) Max. (A)200m Absolute Max. Power Diss. (W)150m Maximum Operating Temp (øC)100õ I(CBO) Max. (A)100u @V(CBO) (V) (Test Condition)40 h(FE) Min. Current gain.35 h(FE) Max. Current gain.110


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    PDF 2N1299

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    Abstract: No abstract text available
    Text: 2N1258 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)30 V(BR)CBO (V)30 I(C) Max. (A)100m Absolute Max. Power Diss. (W)275m Maximum Operating Temp (øC)200þ I(CBO) Max. (A)200n @V(CBO) (V) (Test Condition)25 V(CE)sat Max. (V).60 @I(C) (A) (Test Condition)10m


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    PDF 2N1258

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    Abstract: No abstract text available
    Text: 2N1200 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)15 V(BR)CBO (V)20 I(C) Max. (A)100m Absolute Max. Power Diss. (W)100m Maximum Operating Temp (øC)150þ I(CBO) Max. (A)700n @V(CBO) (V) (Test Condition)10 V(CE)sat Max. (V) @I(C) (A) (Test Condition)


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    PDF 2N1200

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    Abstract: No abstract text available
    Text: 2N1288 Transistors Ge NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)10ã V(BR)CBO (V)15 I(C) Max. (A)50m Absolute Max. Power Diss. (W)75m Maximum Operating Temp (øC)85õ I(CBO) Max. (A)5.0u @V(CBO) (V) (Test Condition)5.0 h(FE) Min. Current gain.50 h(FE) Max. Current gain.300


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    PDF 2N1288

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    Abstract: No abstract text available
    Text: 2N1204A Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)15 V(BR)CBO (V)20 I(C) Max. (A)500m Absolute Max. Power Diss. (W)200m Maximum Operating Temp (øC)100þ I(CBO) Max. (A)7.0u @V(CBO) (V) (Test Condition)5.0 h(FE) Min. Current gain.25 h(FE) Max. Current gain.


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    PDF 2N1204A

    Untitled

    Abstract: No abstract text available
    Text: 2N1256 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)40 V(BR)CBO (V)40 I(C) Max. (A)100m Absolute Max. Power Diss. (W)275m Maximum Operating Temp (øC)200þ I(CBO) Max. (A)200n @V(CBO) (V) (Test Condition)35 V(CE)sat Max. (V).30 @I(C) (A) (Test Condition)10m


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    PDF 2N1256

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    Abstract: No abstract text available
    Text: 2N1220 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)25 V(BR)CBO (V)30 I(C) Max. (A)100m Absolute Max. Power Diss. (W)250m Maximum Operating Temp (øC)175õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)10 V(CE)sat Max. (V) @I(C) (A) (Test Condition)


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    PDF 2N1220

    Untitled

    Abstract: No abstract text available
    Text: 2N1204 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)15 V(BR)CBO (V)20 I(C) Max. (A)500m Absolute Max. Power Diss. (W)200m Maximum Operating Temp (øC)100þ I(CBO) Max. (A)7.0u @V(CBO) (V) (Test Condition)5.0 h(FE) Min. Current gain.25 h(FE) Max. Current gain.


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    PDF 2N1204

    Untitled

    Abstract: No abstract text available
    Text: 2N1201 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)15 V(BR)CBO (V)20 I(C) Max. (A)100m Absolute Max. Power Diss. (W)100m Maximum Operating Temp (øC)150þ I(CBO) Max. (A)700n @V(CBO) (V) (Test Condition)10 V(CE)sat Max. (V) @I(C) (A) (Test Condition)


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    PDF 2N1201

    2N120

    Abstract: igbt 2n120 125OC power ic 5v 1A 034
    Text: Preliminary Data Sheet High Voltage IGBT IXGY 2N120 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 5 A IC90 TC = 90°C 2 A


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    PDF O-252 2N120 728B1 2N120 igbt 2n120 125OC power ic 5v 1A 034

    D2W220CD18

    Abstract: D2W220CD D2N120CD D2W220CG18 D2N120CG saia 801C D2N120CF D2N220CD D2N220CF
    Text: mitièmm NO N-tra? ¡ 0 A rm s ^ [§ ] n [l^ © V r m s m A C 'J U — D 2N120CD D 2N120CF 2N120CG D 2N220CD D2N220CF D2N220CG « ( O R ^ 'C r t * ) m fè N O . (M ttP .3 0 ) : ( & ) 75g m m ± 7 E fà ut UL *f % %±m CSA ¡E/È 00 TUV i im m E tu < i V'rfjis-y—itntifc


    OCR Scan
    PDF D2N120CD D2N120CF D2N120CG D2N220CD D2N220CF D2N220CG ttR30) D2W220CD18 D2W220CD D2W220CG18 saia 801C

    4116 2n

    Abstract: j 5804 2N3920 tr j 5804 4116-2n 2N3619 2N375 N5339 2N2891 2n3442
    Text: DEVICE NUMBER INDEX i PAGE N O. NO. P AGE PAGE NO. 11 2N2851-3 13 2N3022 2N1253 11 2N2852 13 2N3023 2N1506 11 2N2852-1 13 2N1506A 11 2N2852-2 2N1714 11 2N1252 2N1721 n 11 11 11 11 11 11 2N1724 18 2N1724A 2N1715 2N1716 2N1717 2NI718 2N1719 2N1720 DEVI CE DE VI CE


    OCR Scan
    PDF 2N1252 2N1253 2N1506 2N1506A 2N1714 2N1715 2N1716 2N1717 2NI718 2N1719 4116 2n j 5804 2N3920 tr j 5804 4116-2n 2N3619 2N375 N5339 2N2891 2n3442

    2n120

    Abstract: Transistor 9012 ax 9012 transistor
    Text: TYPE 2N120 N-P-N GROWN-JUNCTION SILICON TRANSISTOR B U L L E T I N NO. D L -S 58900, M A R C H 1958 76 to 333 beta spread Specifically designed for high gain at high temperatures m echanical d a ta W elded case with glass-to-metal hermetic seal between case and leads. Approximate weight is 1.7 grams.


    OCR Scan
    PDF 2N120 7S222 Transistor 9012 ax 9012 transistor

    Untitled

    Abstract: No abstract text available
    Text: 1 1 1 ESSOELECTRONICS, INC. PARAMETER TABLES COLLECTOR CURRENT = 2 AMPS NPN TYPES ì 1 ] ] ] 1 1 11 1 1 1 fl 1 1 Device No 2N1252 2N1253 2N1506 2N1506A 2NX714 2N1715 2N1716 2N1717 2NX718 2N1719 2N1720 2N1721 2N1B89 2N1890 2N1974 2N1975 2N2987 2N2988 2N2989


    OCR Scan
    PDF 2N1252 2N1253 2N1506 2N1506A 2NX714 2N1715 2N1716 2N1717 2NX718 2N1719